2SB1260_12 [ROHM]
Power Transistor; 功率晶体管
| 型号： | 2SB1260_12 |
| 厂家： | 
ROHM |
| 描述： | Power Transistor |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181
Features
Dimensions (Unit : mm)
1) Hight breakdown voltage and high current.
BVCEO= −80V, IC = −1A
2) Good hFE linearty.
3) Low VCE(sat).
4) Complements the 2SD1898 / 2SD1733.
2SB1260
2SB1181
+
0.2
2.3
6.5 0.2
0.2
C0.5
+
5.1
+0.2
4.5
0.5 0.1
1.5
1.6 0.1
0.65 0.1
0.75
(1) (2) (3)
0.9
+0.1
0.4
0.55 0.1
1.0 0.2
0.5 0.1
3.0 0.2
2.3 0.2 2.3 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
Structure
Epitaxial planar type
PNP silicon transistor
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
ROHM : MPT3
EIAJ : SC-62
Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
VCBO
VCEO
VEBO
−80
−80
−5
−1
−2
0.5
2
V
V
V
I
C
A (DC)
Collector current
∗1
∗2
I
CP
A (Pulse)
2SB1260
W
Collector power
dissipation
PC
2SB1181
2SB1181
1
10
150
W (Tc=25°C
)
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55 to +150
1 2SB1260 : Pw=20ms duty=1/2
2 2SB1260 : When mounted on a 40
∗
×40×0.7 mm ceramic board.
∗
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
−80
−80
−5
−
−
−
V
V
V
I
I
I
C
= −50
= −1mA
= −50
μ
A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
C
−
−
E
μ
A
I
CBO
EBO
CE(sat)
FE
−
−1
−1
−0.4
390
−
μA
V
CB= −60V
EB= −4V
I
−
−
μA
V
Emitter cutoff current
V
−
−
V
I
C/I
B
= −500mA/ −50mA
= −0.1A
=50mA, f=100MHz
Collector-emitter saturation voltage
DC current transfer ratio
h
120
−
−
−
MHz
pF
V
CE= −3V, I
C
Transition frequency 2SB1181
f
T
100
20
25
V
CE= −10V, I
CB= −10V
E
V
I
2SB1260
−
−
Output capacitance
Cob
E=0A
2SB1181
−
−
pF
f=1MHz
www.rohm.com
2012.01 - Rev.G
1/2
c
○ 2012 ROHM Co., Ltd. All rights reserved.
2SB1260 / 2SB1181
Data Sheet
Packaging specifications and hFE
Package
Code
Taping
TL
T100
1000
Basic ordering
unit (pieces)
2500
hFE
Type
2SB1260
QR
QR
−
2SB1181
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
Electrical characteristic curves
1000
500
−1000
Ta=25°C
−4.5mA
Ta=25°C
Ta
=25°C
−1.0
−0.8
−0.6
VCE= −5V
−100
−10
−4mA
−3.5mA
−3mA
200
100
50
VCE= −3V
−2.5mA
−2mA
−1V
−0.4
−0.2
−1.5mA
−1mA
−1
20
10
−0.5mA
I
B=0mA
0
0
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−1 −2
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current
1000
500
1000
500
Ta
=25°C
Ta=25°C
Ta
1MHz
0A
=25°C
VCE= −5V
f
=
−2
−1
I =
E
200
100
200
100
50
−0.5
−0.2
50
20
10
20
10
I
C/I
B
=20
−0.1
10
−0.05
5
5
−0.02
2
1
2
1
−0.01
1
2
5
10 20
50 100 200 500 1000
−
1
−2
−5
−
10
−
20
−
50
−100
−200
−500
−1000
−2000
−0.1 -0.2
−0.5 -1 −2
−5 −10 −20 −50 −100
COLLECTOR CURRENT : I (mA)
C
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Collector output capacitance
vs. collector-base voltage
Fig.4 Collector-emitter saturation
voltage vs. collector current
www.rohm.com
2012.01 - Rev.G
2/2
c
○ 2012 ROHM Co., Ltd. All rights reserved.
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