2SA1585STP/Q [ROHM]

2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, SPT, SC-72, 3 PIN;
2SA1585STP/Q
型号: 2SA1585STP/Q
厂家: ROHM    ROHM
描述:

2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, SPT, SC-72, 3 PIN

文件: 总4页 (文件大小:85K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SB1424 / 2SA1585S  
Transistors  
Low VCE(sat) Transistor (20V, 3A)  
2SB1424 / 2SA1585S  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Low VCE(sat).  
2SB1424  
2SA1585S  
VCE(sat) = 0.2V (Typ.)  
(IC/IB = 2A / 0.1A)  
2) Excellent DC current gain characteristics.  
4
0.2  
2 0.2  
+
0.2  
4.5  
0.1  
1.5 0.1  
1.6 0.1  
3) Complements the 2SD2150 / 2SC4115S.  
+
0.15  
0.45  
0.05  
(1) (2) (3)  
+
0.1  
0.4  
0.05  
0.5 0.1  
3.0 0.2  
0.4 0.1  
1.5 0.1  
0.4 0.1  
1.5 0.1  
+
0.15  
+
0.4  
zStructure  
Epitaxial planar type  
PNP silicon transistor  
0.45  
2.5  
0.5  
0.05  
0.1  
5
(1) Base  
(2) Collector  
(3) Emitter  
(1) (2) (3)  
ROHM : MPT3  
EIAJ : SC-62  
(1) Emitter  
ROHM : SPT  
EIAJ : SC-72  
(2) Collector  
(3) Base  
Abbreviated symbol: AE  
Denotes hFE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
20  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
VCBO  
VCEO  
VEBO  
20  
V
6  
V
2SB1424  
3  
A
I
C
Collector current  
2SA1585S  
2  
I
CP  
5  
A(Pulse)  
0.5  
2SB1424  
Collector power  
dissipation  
P
C
W
2SA1585S  
0.4  
Junction temperature  
Storage temperature  
Single pulse Pw=10ms  
Tj  
150  
°C  
°C  
Tstg  
55 to 150  
Rev.A  
1/3  
2SB1424 / 2SA1585S  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
Collector-base breakdown voltage  
BVCBO  
20  
20  
6  
I
I
I
C
= −50  
= −1mA  
= −50  
µ
A
Collector-emitter breakdown voltage BVCEO  
V
C
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
V
E
µA  
I
CBO  
EBO  
CE(sat)  
FE  
0.1  
0.1  
0.5  
390  
µ
A
A
V
CB= −20V  
EB= −5V  
Emitter cutoff current  
I
µ
V
Collector-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
V
V
IC/IB= −2A/ 0.1A  
h
120  
V
V
V
CE= −2V, I  
CE= −2V, I  
C
= −0.1A  
=0.5A, f=100MHz  
=0A, f=1MHz  
f
T
240  
35  
MHz  
pF  
E
Output capacitance  
Cob  
CB= −10V, I  
E
zPackaging specifications and hFE  
hFE values are classified as follows :  
Package  
Taping  
Item  
Q
R
Code  
TP  
T100  
hFE  
120 to 270 180 to 390  
Basic ordering  
unit (pieces)  
5000  
1000  
Type  
hFE  
2SA1585S  
2SB1424  
QR  
QR  
zElectrical characteristic curves  
2.0  
5  
4  
3  
2  
10  
Ta=25°C  
Ta=25°C  
45mA  
V
CE= −2V  
20mA  
18mA  
50mA  
5  
12mA  
10mA  
8mA  
2  
1  
0.5  
1.6  
1.2  
0.8  
Ta=100°C  
25°C  
0.2  
40°C  
0.1  
0.05  
6mA  
4mA  
2mA  
0.02  
0.01  
5m  
5mA  
0.4  
1  
2m  
1m  
IB=0A  
IB=0A  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1  
2  
3  
4  
5  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
BASE TO EMITTER VOLTAGE : VBE (V)  
Fig.1 Grounded emitter propagation  
characteristics  
Fig.2 Grounded emitter output  
Fig.3 Grounded emitter output  
characteristics (  
)
characteristics (  
)
Rev.A  
2/3  
2SB1424 / 2SA1585S  
Transistors  
5k  
2  
1  
2  
VCE= 2V  
IC/IB=10  
IC/IB=20  
1  
2k  
Ta=100°C  
500m  
500m  
25°C  
1k  
Ta=100°C  
25°C  
Ta=100°C  
25°C  
40°C  
500  
200m  
100m  
40°C  
200m  
100m  
50m  
40°C  
200  
100  
50  
50m  
20m  
10m  
5m  
20m  
10m  
5m  
20  
10  
5
2m  
2m  
1m 2m  
5m 0m 20m 50m 100m 200m 500m  
1  
2 5 10  
1m  
2m  
5m  
10m  
20m  
50m  
100m  
200m  
500m  
1  
2  
5  
10  
1m  
2m  
5m  
10m  
20m  
50m  
100m  
200m  
500m  
1
2
5
10  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I (A)  
C
Fig.4 DC current gain vs.  
collector current  
Fig.5 Collector-emitter saturation  
voltage vs. collector curren (  
Fig.6 Collector-emitter saturation  
voltage vs. collector current (  
)
)
1000  
2  
1000  
Ta=25°C  
VCE= 2V  
IC/IB=50  
Ta=25°C  
f=1MHz  
500  
1  
I
I
E
=0A  
=0A  
500  
200  
500m  
C
200  
100  
50  
C
ib  
200m  
100m  
50m  
Ta=100°C  
40°C  
25°C  
100  
50  
20  
C
ob  
10  
5
20m  
10m  
5m  
20  
10  
2
1
2m  
1
2
5
10 20 50 100 200 5001000  
1m  
2m  
5m  
10m  
20m  
50m  
100m  
200m  
500m  
1
2
5
10  
0.1 0.2 0.5 1 2  
5 10 20 50  
EMITTER CURRENT : IE (mA)  
COLLECTOR CURRENT : I (A)  
C
EMITTER TO BASE VOLTAGE : VEB (V)  
COLLECTOR TO BASE VOLTAGE : VCB (V)  
Fig.9 Emitter input capacitance vs.  
emitter base voltage  
Fig.7 Collector-emitter saturation  
voltage vs. collector current (  
Fig.8 Gain bandwidth product vs.  
emitter current  
)
Collector output capacitance vs.  
collector-base voltage  
Rev.A  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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