2N3904 [ROHM]
NPN General Purpose Transistor; NPN通用晶体管
| 型号： | 2N3904 |
| 厂家： | 
ROHM |
| 描述： | NPN General Purpose Transistor |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
!Features
!External dimensions (Units : mm)
CEO
C
1) BV > 40V (I = 1mA)
2.0±0.2
0.9±0.1
0.7±0.1
1.3±0.1
UMT3904
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
0.65 0.65
(1) (2)
0.2
0~0.1
(1) Emitter
(2) Base
(3) Collector
(3)
ROHM : UMT3
EIAJ : SC-70
+0.1
−0
0.3
0.15±0.05
All terminals have same dimensions
2.9±0.2
+0.2
0.95
SST3904
−0.1
0.45±0.1
1.9±0.2
!Package, marking and packaging specifications
0.95 0.95
(2)
(1)
0~0.1
0.2Min.
Part No.
Packaging type
Marking
UMT3904 SST3904 MMST3904
2N3904
TO-92
-
UMT3
R1A
SST3
R1A
SMT3
R1A
(1) Emitter
(2) Base
(3) Collector
(3)
+0.1
0.15
+0.1
−0.05
−0.06
ROHM : SST3
MMST3904
0.4
T106
T116
T146
T93
Code
Basic ordering unit
(pieces)
All terminals have same dimensions
3000
3000
3000
3000
2.9±0.2
+0.2
1.1
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
(2)
(1)
0~0.1
(3)
(1) Emitter
(2) Base
(3) Collector
!Absolute maximum ratings (Ta = 25°C)
ROHM : SMT3
EIAJ : SC-59
+0.1
0.15
−0.06
+0.1
−0.05
0.4
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
60
Unit
V
All terminals have same dimensions
VCBO
VCEO
VEBO
40
V
4.8±
0.2
3.7±0.2
2N3904
6
V
I
C
0.2
A
UMT3904,
0.2
W
SST3904,
Collector
power
MMST3904
+
0.15
PC
0.5
2.5
−
0.05
dissipation
W
W
SST3904, MMST3904
2N3904
0.35
0.625
(1) Emitter
(2) Base
(3) Collector
*
ROHM : TO-92
EIAJ : SC-43
(1) (2) (3)
5
+
0.3
−
0.1
0.45±
0.1
2.3
Junction temperature
Storage temperature
Tj
Tstg
150
°C
°C
−55~+150
When mounted on a 7 x 5 x 0.6 mm ceramic board.
*
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
60
-
-
-
-
-
-
-
-
-
-
-
V
V
I
I
I
C
C
E
= 10µA
= 1mA
40
6
-
V
= 10µA
CB = 30V
EB = 3V
I
CES
-
50
50
0.2
0.3
0.85
0.95
nA
nA
V
V
Emitter cutoff current
I
EBO
-
-
I
I
I
I
C/I
C/I
C/I
C
/I
B
B
B
B
= 10mA/1mA
= 50mA/5mA
= 10mA/1mA
= 50mA/5mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(sat)
-
0.65
-
V
40
70
100
60
30
300
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
CE = 1V , I
CE = 1V , I
CE = 1V , I
CE = 1V , I
CE = 1V , I
C
C
C
C
C
= 0.1mA
= 1mA
DC current transfer ratio
h
FE
300
-
-
= 10mA
= 50mA
= 100mA
~
-
-
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
fT
MHz
pF
pF
ns
V
V
V
V
V
V
V
CE = 20V , IE = −10mA, f = 100MHz
CB = 10V , f = 100kHz
Cob
Cib
td
4
-
8
EB = 0.5V , f = 100kHz
CC = 3V , VBE(OFF) = 0.5V , I
CC = 3V , VBE(OFF) = 0.5V , I
-
35
35
200
50
C
C
= 10mA , IB1 = 1mA
= 10mA , IB1 = 1mA
Rise time
tr
-
ns
Storage time
tstg
tf
-
ns
CC = 3V , I
CC = 3V , I
C
= 10mA , IB1 = −IB2 = 1mA
= 10mA , IB1 = −IB2 = 1mA
Fall time
-
ns
C
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
!Electrical characteristic curves
10
40
Ta=25°C
Ta=25°C
IC / IB=10
35
0.3
0.2
8
30
25
20
6
4
2
0
15
0.1
0
10
5.0
IB=0µA
0
10
20
V)
0.1
1.0
10
100
COLLECTOR-EMITTER VOLTAGE : VCE
(
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter output
characteristics
Fig.2 Collector-emitter saturation
voltage vs. collector current
500
100
Ta=25°C
5V
10V
VCE=1V
3V
10
5
0.1
1.0
10
COLLECTOR CURRENT : I
100
1000
C
(
mA)
Fig.3 DC current gain vs. collector current ( Ι )
500
100
VCE=5V
Ta=125°C
Ta=25°C
Ta=−55°C
10
5
0.1
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
500
Ta=25°C
CE=5V
f=1kHz
1.8
1.6
Ta=25°C
/ I =10
I
C
B
V
1.2
0.8
100
0.4
0
10
5
0.01
0.1
1.0
10
100
0.1
1.0
10
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
Fig.5 AC current gain vs. collector current
1.8
1.6
1000
1000
Ta=25°C
Ta=25°C
Ta=25°C
V
CE=5V
IC / IB=10
IC / IB=10
1.2
0.8
V
CC=40V
40V
100
100
15V
CC=3V
V
0.4
0
10
1.0
10
1.0
0.1
1.0
10
100
10
COLLECTOR CURRENT : I
100
10
COLLECTOR CURRENT : I
100
COLLECTOR CURRENT : I
C
(mA)
C
(mA)
C
(mA)
Fig.7 Grounded emitter propagation
characteristics
Fig.9 Rise time vs. collector
current
Fig.8 Turn-on time vs. collector
current
50
10
1000
1000
Ta=25°C
Ta=25°C
CC=40V
/I =10
Ta=25°C
f=1MHz
IC=10IB1=10IB2
V
I
C B
40V
Cib
100
100
Cob
15V
VCE=3V
1
0.5
0.1
10
1.0
10
1.0
1.0
10
100
10
COLLECTOR CURRENT : I
100
10
100
REVERSE BIAS VOLTAGE (V)
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.12 Input / output capacitance
vs. voltage
Fig.10 Storage time vs. collector
current
Fig.11 Fall time vs. collector
current
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
1000
100
100
Ta=25°C
Ta=25°C
V
CE=5V
V
CE=5V
f=270Hz
100MHz 200MHz 400MHz 500MHz
300 MHz
hoe
10
10
hie
100
hre
hfe
1.0
0.1
1
Ta=25°C
IC=1mA
hie=3.84kΩ
300MHz
200MHz
hfe=141
hre=5.03 × 10−5
hoe=5.58µS
100MHz
100
10
1.0
0.1
0.1
10
100
0.1
1.0
10
1
10
100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.14 Gain bandwidth product
vs. collector current
Fig.13 Gain bandwidth product
Fig.15 h parameter vs. collector current
100k
100k
10µ
1µ
Ta=25°C
CE=5V
f=10kHz
VCB=25V
Ta=25°C
V
V
CE=5V
f=1kHz
12dB
8dB
12dB
8dB
5dB
5dB
3dB
10k
10k
1.0dB
100n
10n
NF=1.0dB
NF=1.0dB
1k
1k
1n
100
0.01
100
0.01
0.1n
0.1
1
10
0.1
1
10
0
25
50
75
100
125
150
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
ANBIENT TEMPERATURE : Ta (°C)
Fig.17 Noise characteristics ( ΙΙ )
Fig.18 Noise characteristics ( ΙΙΙ )
Fig.16 Noise characteristics ( Ι )
100k
10k
12
Ta=25°C
Ta=25°C
V
CE=5V
V
CE=5V
f=10Hz
I
C=100µA
10
8
RS
=10kΩ
12dB
8dB
5dB
6
4
1k
5.0dB
2
0
100
0.01
10
100
1k
10k
100k
0.1
1
10
FREQUENCY : f (Hz)
COLLECTOR CURRENT : IC (mA)
Fig.20 Noise vs. collector current
Fig.19 Noise characteristics ( ΙV )
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