1SS356 [ROHM]
Band switching diode; 波段开关二极管
| 型号： | 1SS356 |
| 厂家： | 
ROHM |
| 描述： | Band switching diode |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1SS356
Diodes
Band switching diode
1SS356
!Applications
!External dimensions (Units : mm)
High frequency switching
CATHODE MARK
!Features
1) Small surface mounting type. (UMD2)
2) High reliability.
!Construction
Silicon epitaxial planar
+0.1
0.1
−0.05
0.3 0.05
+0.2
−0.1
0.7
1.25 0.1
ROHM : UMD2
EIAJ : SC - 76
JEDEC : SOD - 323
!Absolute maximum ratings (Ta=25°C)
Parameter
DC reverse voltage
DC forward current
Junction temperature
Storage temperature
Symbol
Limits
35
Unit
V
V
R
I
F
100
125
mA
°C
Tj
Tstg
−55~
+125
°C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
1.0
10
Unit
Conditions
V
F
−
−
−
−
−
−
−
−
V
nA
pF
Ω
I =10mA
F
Reverse current
I
R
V
V
R
=25V
=6V, f=1MHz
Capacitance between terminals
Forward operating resistance
CT
1.2
0.9
R
rF
I =2mA, f=100MHz
F
1SS356
Diodes
!Electrical characteristic curves (Ta=25°C)
1
100m
10m
1m
10.0
3
2
1
0
1.0
100µ
10µ
1µ
100n
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0
10
20
30
0
10
20
30
40
V)
50
FORWARD VOLTAGE : V V)
F
(
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : V
R
(
Fig. 1 Forward characteristics
Fig. 3 Capacitance between
terminals characteristics
Fig. 2 Reverse characteristics
1.0
0.5
f=100MHz
0.2
0
1
2
5
10
FORWARD CURRENT : IF (mA)
Fig. 4 Forward operating
resistance characteristics
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