NSBA123JDXV6T5 [ROCHESTER]
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN;
| 型号： | NSBA123JDXV6T5 |
| 厂家： | 
Rochester Electronics |
| 描述： | 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：785K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSBA114EDXV6T1,
NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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(3)
(2)
(1)
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low−power surface mount applications where board space is
at a premium.
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)
(5)
(6)
SOT−563
Features
CASE 463A
PLASTIC
STYLE 1
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These are Pb−Free Devices
1
MARKING DIAGRAM
MAXIMUM RATINGS
(T = 25°C unless otherwise noted, common for Q and Q )
A
xx M G
1
2
G
Rating
Symbol
Value
−50
Unit
Collector-Base Voltage
V
V
Vdc
CBO
CEO
Collector-Emitter Voltage
Collector Current
−50
Vdc
xx = Device Code
(Refer to page 2)
I
−100
mAdc
C
M
= Date Code
THERMAL CHARACTERISTICS
G
= Pb−Free Package
(Note: Microdot may be in either location)
Characteristic
(One Junction Heated)
Symbol
Max
Unit
ORDERING INFORMATION
Total Device Dissipation @ T = 25°C
P
357
2.9
mW
mW/°C
A
D
†
Derate above 25°C (Note 1)
Shipping
Device
Package
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
350
°C/W
q
JA
NSBA1xxxDXV6T1 SOT−563* 4000/Tape & Reel
NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel
Characteristic
(Both Junctions Heated)
NSBA1xxxDXV6T5 SOT−563* 8000/Tape & Reel
NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel
Symbol
Max
Unit
Total Device Dissipation @ T = 25°C
P
500
4.0
mW
mW/°C
A
D
Derate above 25°C (Note 1)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
q
250
°C/W
JA
Junction and Storage Temperature
Range
T , T
J
−55 to
+150
°C
stg
**This package is inherently Pb−Free.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
April, 2006 − Rev. 6
NSBA114EDXV6/D
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
DEVICE MARKING AND RESISTOR VALUES
Device*
NSBA114EDXV6T1 / T5
Package
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
0A
R1 (kW)
10
R2 (kW)
10
NSBA124EDXV6T1 / T5
NSBA144EDXV6T1 / T5
NSBA114YDXV6T1 / T5
NSBA114TDXV6T1 / T5
NSBA143TDXV6T1 / T5
NSBA113EDXV6T1 / T5
NSBA123EDXV6T1 / T5
NSBA143EDXV6T1 / T5
NSBA143ZDXV6T1 / T5
NSBA124XDXV6T1 / T5
NSBA123JDXV6T1 / T5
NSBA115EDXV6T1 / T5
NSBA144WDXV6T1
0B
22
22
0C
47
47
0D
10
47
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
0E
10
∞
0F
4.7
1.0
2.2
4.7
4.7
22
∞
0G
0H
1.0
2.2
4.7
47
0J
0K
0L
47
0M
0N
2.2
100
47
47
100
22
0P
*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = −50 V, I = 0)
I
I
−
−
−
−
−100
−500
nAdc
nAdc
mAdc
CB
E
CBO
CEO
Collector-Emitter Cutoff Current (V = −50 V, I = 0)
CE
B
Emitter-Base Cutoff Current
(V = −6.0 V, I = 0)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
EBO
EB
C
Collector-Base Breakdown Voltage (I = −10 mA, I = 0)
V
V
−50
−50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown Voltage (Note 3) (I = −2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage (I = −10 mA, I = −0.3 mA)
V
CE(sat)
−
−
−0.25
Vdc
C
E
(I = −10 mA, I = −5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1
C
B
B
(I = −10 mA, I = −1 mA)
C
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q ) (continued)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 3) (continued)
DC Current Gain
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = −10 V, I = −5.0 mA)
100
140
140
250
250
5.0
15
27
140
130
140
130
140
CE
C
80
160
160
3.0
8.0
15
80
80
80
80
80
Output Voltage (on)
(V = −5.0 V, V = −2.5 V, R = 1.0 kW)
V
Vdc
OL
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144EDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
CC
B
L
(V = −5.0 V, V = −3.5 V, R = 1.0 kW)
CC
B
L
(V = −5.0 V, V = −5.5 V, R = 1.0 kW)
CC
B
L
(V = −5.0 V, V = −4.0 V, R = 1.0 kW)
CC
B
L
Output Voltage (off) (V = −5.0 V, V = −0.5 V, R = 1.0 kW)
V
−4.9
−
−
Vdc
CC
B
L
OH
(V = −5.0 V, V = −0.05 V, R = 1.0 kW)
NSBA113EDXV6T1
CC
B
L
(V = −5.0 V, V = −0.25 V, R = 1.0 kW)
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA123EDXV6T1
NSBA143ZDXV6T1
CC
B
L
Input Resistor
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k W
15.4
1.54
70
32.9
Resistor Ratio
NSBA114EDXV6T1/NSBA124EDXV6T1/
NSBA144EDXV6T1/NSBA115EDXV6T1
NSBA114YDXV6T1
R /R
1 2
0.8
0.17
−
1.0
0.21
−
1.2
0.25
−
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1
NSBA143ZDXV6T1
0.8
1.0
0.1
0.47
0.047
2.1
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144WDXV6T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
ALL NSBA114EDXV6T1 SERIES DEVICES
— NSBA114EDXV6T1
1
300
250
200
150
100
I /I = 10
C B
T ꢁ=ꢁ−25°C
A
ꢀ0.1
25°C
75°C
R
q
JA
= 490°C/W
50
0
ꢀ0.01
ꢀ20
−50
0
50
100
150
0
ꢀ40
50
T , AMBIENT TEMPERATURE (°C)
A
I , COLLECTOR CURRENT (mA)
C
Figure 1. Derating Curve − ALL DEVICES
Figure 2. VCE(sat) versus IC
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
1000
4
V
= 10 V
CE
f = 1 MHz
l = 0 V
E
T = 25°C
A
3
T ꢁ=ꢁ75°C
A
25°C
100
2
1
0
−25°C
10
1
10
100
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
100
25°C
75°C
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
ꢀ0.1
1
ꢀ0.01
V
= 5 V
O
ꢀ0.1
ꢀ0.001
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
0
1
ꢀ2
3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
ꢀ9
10
V , INPUT VOLTAGE (VOLTS)
in
I , COLLECTOR CURRENT (mA)
C
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1
1000
10
V
= 10 V
CE
I /I = 10
C B
T ꢁ=ꢁ75°C
A
1
25°C
25°C
T ꢁ=ꢁ−25°C
A
−25°C
100
75°C
ꢀ0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ꢀ20
ꢀ40
ꢀ50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
l = 0 V
T ꢁ=ꢁ−25°C
A
E
10
1
T = 25°C
A
ꢀ0.1
1
0
ꢀ0.01
V
= 5 V
ꢀ9
O
ꢀ0.001
0
1
ꢀ2
ꢀ3
ꢀ4
ꢀ5
ꢀ6
ꢀ7
ꢀ8
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
10
25°C
75°C
1
ꢀ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1
1
1000
I /I = 10
C B
T ꢁ=ꢁ75°C
A
T ꢁ=ꢁ−25°C
A
25°C
25°C
75°C
−25°C
100
ꢀ0.1
ꢀ0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
25°C
−25°C
T ꢁ=ꢁ75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ꢀ0.1
ꢀ0.01
0.2
0
V
= 5 V
ꢀ5
O
ꢀ0.001
0
10
20
30
40
50
0
1
2
3
ꢀ4
ꢀ6
ꢀ7
ꢀ8
ꢁ9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T ꢁ=ꢁ−25°C
A
25°C
75°C
10
1
ꢁ0.1
0
10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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6
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114YDXV6T1
1
180
T ꢁ=ꢁ75°C
A
I /I = 10
C B
V
= 10 V
CE
160
140
120
100
80
T ꢁ=ꢁ−25°C
A
25°C
−25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5
4
100
10
1
T ꢁ=ꢁ75°C
f = 1 MHz
l = 0 V
A
25°C
E
3.5
3
T = 25°C
A
−25°C
2.5
2
1.5
1
V
= 5 V
O
0.5
0
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
V
= 0.2 V
25°C
O
T ꢁ=ꢁ−25°C
A
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114TDXV6T1
1000
T = 25°C
A
V
= 10 V
CE
V
= 5.0 V
CE
100
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 22. DC Current Gain
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA143TDXV6T1
1000
T = 25°C
A
V
= 10 V
CE
V
= 5.0 V
CE
100
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 23. DC Current Gain
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA115EDXV6T1
1
1000
75°C
T = −25°C
A
100
25°C
0.1
75°C
25°C
10
1
−25°C
V
= 10 V
I /I = 10
CE
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 24. Maximum Collector Voltage versus
Collector Current
Figure 25. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
= 0 V
E
T = −25°C
A
T = 25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 26. Output Capacitance
Figure 27. Output Current versus Input Voltage
100
T = −25°C
A
25°C
10
V
= 0.2 V
O
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 28. Input Voltage versus Output Current
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144WDXV6T1
1000
1
75°C
T = −25°C
T = −25°C
A
75°C
A
0.1
100
25°C
25°C
V
= 10 V
CE
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
= 0 V
E
T = −25°C
A
T = 25°C
A
25°C
0.1
0.01
V
= 5 V
O
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 31. Output Capacitance
Figure 32. Output Current versus Input Voltage
100
V
= 0.2 V
O
T = −25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 33. Input Voltage versus Output Current
http://onsemi.com
10
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
−X−
L
6
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX MIN
INCHES
NOM MAX
E
−Y−
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b 56 PL
C
0.5 BSC
0.20
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
E
1.60
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSBA114EDXV6/D
相关型号：
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100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
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NSBA124EDXV6T1
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
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NSBA124EDXV6T5
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