MJE800G [ROCHESTER]
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN;
| 型号： | MJE800G |
| 厂家： | 
Rochester Electronics |
| 描述： | 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总7页 (文件大小：814K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJE700, MJE702, MJE703
(PNP) - MJE800, MJE802,
MJE803 (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
http://onsemi.com
These devices are designed for general−purpose amplifier and
low−speed switching applications.
4.0 AMPERE
DARLINGTON POWER
TRANSISTORS
Features
• High DC Current Gain − h = 2000 (Typ) @ I
COMPLEMENTARY SILICON
40 WATT
FE
C
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication
50 WATT
• Choice of Packages − MJE700 and MJE800 Series
• Pb−Free Packages are Available*
NPN
PNP
COLLECTOR 2
COLLECTOR 2
BASE
3
BASE
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
Vdc
CEO
MJE700, MJE800
60
80
EMITTER 1
EMITTER 1
MJE702, MJE703, MJE802, MJE803
MJE800
MJE802
MJE803
MJE700
MJE702
MJE703
Collector−Base Voltage
V
Vdc
CB
MJE700, MJE800
60
80
MJE702, MJE703, MJE802, MJE803
Emitter−Base Voltage
Collector Current
Base Current
V
5.0
4.0
0.1
Vdc
Adc
Adc
EB
I
C
I
B
TO−225
CASE 77
STYLE 1
Total Power Dissipation @ T = 25_C
P
40
W
mW/_C
_C
C
D
0.32
Derate above 25_C
3
Operating and Storage Junction
Temperature Range
T , T
J
–55 to +150
stg
2
1
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q
6.25
_C/W
JC
YWW
JEx0yG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
= Year
WW
= Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
May, 2011 − Rev. 11
MJE700/D
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
MJE700, MJE800
MJE702, MJE703, MJE802, MJE803
V
60
80
−
−
Vdc
(BR)CEO
(I = 50 mAdc, I = 0)
C
B
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
mAdc
CEO
CBO
MJE700, MJE800
−
−
100
100
CE
B
(V = 80 Vdc, I = 0)
MJE702, MJE703, MJE802, MJE803
CE
B
Collector Cutoff Current
I
mAdc
(V = Rated BV
, I = 0)
E
−
−
100
500
CB
CEO
CEO
E
(V = Rated BV
, I = 0, T = 100_C)
CB
C
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
−
2.0
mAdc
EBO
BE
C
ON CHARACTERISTICS
DC Current Gain (Note 1)
h
FE
−
(I = 1.5 Adc, V = 3.0 Vdc)
MJE700, MJE702, MJE800, MJE802
MJE703, MJE803
750
750
100
−
−
−
C
CE
(I = 2.0 Adc, V = 3.0 Vdc)
C
CE
(I = 4.0 Adc, V = 3.0 Vdc)
All devices
C
CE
Collector−Emitter Saturation Voltage (Note 1)
(I = 1.5 Adc, I = 30 mAdc)
V
Vdc
Vdc
CE(sat)
MJE700, MJE702, MJE800, MJE802
MJE703, MJE803
−
−
−
2.5
2.8
3.0
C
B
(I = 2.0 Adc, I = 40 mAdc)
C
B
(I = 4.0 Adc, I = 40 mAdc)
All devices
C
B
Base−Emitter On Voltage (Note 1)
(I = 1.5 Adc, V = 3.0 Vdc)
V
BE(on)
MJE700, MJE702, MJE800, MJE802
MJE703, MJE803
−
−
−
2.5
2.5
3.0
C
CE
(I = 2.0 Adc, V = 3.0 Vdc)
C
CE
(I = 4.0 Adc, V = 3.0 Vdc)
All devices
C
CE
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
h
fe
1.0
−
−
(I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz)
C
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
40
30
TO-220AB
TO-126
20
10
0
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
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2
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)
4.0
V
V
CC
I /I = 250
= 30 V
I
= I
CC
B1 B2
R
& R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
B
-ꢂ30 V
t
s
T = 25°C
C B
J
ꢃD , MUST BE FAST RECOVERY TYPE, e.g.:
1
ꢃꢃ1N5825 USED ABOVE I ≈ 100 mA
2.0
B
R
C
ꢃꢃMSD6100 USED BELOW I ≈ 100 mA
SCOPE
B
TUT
t
f
V
2
R
B
APPROX
+ꢂ8.0 V
1.0
0.8
≈ 6.0 k
≈ 150
51
D
1
t
0
r
BE(off)
2.0
0.6
0.4
V
1
APPROX
-12 V
+ 4.0 V
For t and t , D id disconnected
t @ V
d
= 0
25 ms
d
r
1
PNP
NPN
and V = 0, R and R are varied
2
B
C
t , t ≤ 10 ns
DUTY CYCLE = 1.0%
r
f
to obtain desired test currents.
0.2
0.04
For NPN test circuit, reverse diode,
polarities and input pulses.
0.1
0.2
0.4 0.6
1.0
4.0
0.06
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
1.0
0.7
D = 0.5
0.2
0.5
0.3
0.2
P
(pk)
0.1
q
q
(t) = r(t) q
JC
JC
JC
0.05
= 3.12°C/W MAX
0.1
0.07
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
t
1
t
2
1
T
- T = P q (t)
C (pk) JC
J(pk)
DUTY CYCLE, D = t /t
1 2
0.03
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200 300 500 1000
t, TIME (ms)
Figure 4. Thermal Response (MJE700, 800 Series)
ACTIVE−REGION SAFE−OPERATING AREA
10
7.0
10
7.0
5.0ꢁms
1.0ꢁms
100ꢁms
5.0ꢁms
5.0
5.0
1.0ꢁms
100ꢁms
3.0
2.0
3.0
2.0
dc
T = 150°C
dc
T = 150°C
J
J
1.0
0.7
0.5
1.0
0.7
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T = 25°C (SINGLE PULSE)
@ T = 25°C (SINGLE PULSE)
C
SECOND BREAKDOWN LIMITED
C
SECOND BREAKDOWN LIMITED
0.3
0.2
0.3
0.2
MJE702, 703
MJE700
MJE802, 803
MJE800
0.1
5.0
0.1
5.0
7.0
10
20
30
50
70
100
7.0
10
20
30
50
70
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. MJE700 Series
Figure 6. MJE800 Series
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
The data of Figures 5 and 6 are based on T
C
pulse limits are valid for duty cycles to 10% provided T
= 150_C;
J(pk)
T is variable depending on conditions. Second breakdown
breakdown. Safe operating area curves indicate I − V
C
CE
J(pk)
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
< 150_C. T
may be calculated from the data in Figure 4.
J(pk)
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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3
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)
PNP
MJE700 Series
NPN
MJE800 Series
6.0 k
6.0 k
V
CE
= 3.0 V
V
CE
= 3.0 V
T = 125°C
J
T = 125°C
J
4.0 k
3.0 k
4.0 k
3.0 k
25°C
2.0 k
2.0 k
25°C
-ꢂ55°C
-ꢂ55°C
1.0 k
800
1.0 k
800
600
600
400
300
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 7. DC Current Gain
3.4
3.0
2.6
2.2
1.8
1.4
3.4
T = 25°C
J
T = 25°C
J
I
=
0.5 A
C
3.0
2.6
2.2
1.8
I
=
0.5 A
C
1.0 A
2.0 A
4.0 A
1.0 A
2.0 A
4.0 A
1.4
1.0
0.6
1.0
0.6
0.1 0.2
0.5 1.0
2.0
5.0 10
20
50 100
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50 100
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 8. Collector Saturation Region
2.2
1.8
1.4
1.0
0.6
0.2
2.2
T = 25°C
T = 25°C
J
J
1.8
V
@ I /I = 250
C B
V
@ I /I = 250
BE(sat) C B
BE(sat)
V
BE
@ V = 3.0 V
CE
1.4
1.0
0.6
0.2
V
BE
@ V = 3.0 V
CE
V
@ I /I = 250
C B
CE(sat)
V
@ I /I = 250
C B
CE(sat)
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
0.04 0.06 0.1
0.2
0.4 0.6
1.0
2.0
4.0
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 9. “On” Voltages
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4
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)
ORDERING INFORMATION
Device
Package
Shipping
MJE700
TO−225
MJE700G
TO−225
(Pb−Free)
MJE702
TO−225
MJE702G
TO−225
(Pb−Free)
MJE703
TO−225
MJE703G
TO−225
(Pb−Free)
50 Units / Bulk
MJE800
TO−225
MJE800G
TO−225
(Pb−Free)
MJE802
TO−225
MJE802G
TO−225
(Pb−Free)
MJE803
TO−225
MJE803G
TO−225
(Pb−Free)
http://onsemi.com
5
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
−B−
U
F
C
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
V
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
J
K
M
Q
R
S
U
V
TYP
TYP
_
_
G
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
---
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
---
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
0.25 (0.010)
A
B
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJE700/D
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