MAX412BCSA+T [ROCHESTER]
DUAL OP-AMP, 350uV OFFSET-MAX, 28MHz BAND WIDTH, PDSO8, 0.150 INCH, MO-012, SO-8;型号: | MAX412BCSA+T |
厂家: | Rochester Electronics |
描述: | DUAL OP-AMP, 350uV OFFSET-MAX, 28MHz BAND WIDTH, PDSO8, 0.150 INCH, MO-012, SO-8 放大器 光电二极管 |
文件: | 总16页 (文件大小:1026K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
19-4194; Rev 4; 6/03
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
General Description
Features
The MAX410/MAX412/MAX414 single/dual/quad op
amps set a new standard for noise performance in
high-speed, low-voltage systems. Input voltage-noise
density is guaranteed to be less than 2.4nV/√Hz at
1kHz. A unique design not only combines low noise
with ±±V operation, but also consumes 2.±mA supply
current per amplifier. Low-voltage operation is guaran-
ꢀ Voltage Noise: 2.4nV/√Hz (max) at 1kHz
ꢀ 2.5mA Supply Current Per Amplifier
ꢀ Low Supply Voltage Operation: 2.4V to 5V
ꢀ 28MHz Unity-Gain Bandwidth
ꢀ 4.5V/µs Slew Rate
teed with an output voltage swing of 7.3V
into 2kΩ
P-P
ꢀ 250µV (max) Offset Voltage (MAX410/MAX412)
ꢀ 115dB (min) Voltage Gain
from ±±V supplies. The MAX410/MAX412/MAX414 also
operate from supply voltages between ±2.4V and ±±V
for greater supply flexibility.
ꢀ Available in an Ultra-Small TDFN Package
Unity-gain stability, 28MHz bandwidth, and 4.±V/µs
slew rate ensure low-noise performance in a wide vari-
ety of wideband and measurement applications. The
MAX410/MAX412/MAX414 are available in DIP and SO
packages in the industry-standard single/dual/quad op
amp pin configurations. The single comes in an ultra-
small TDFN package (3mm ✕ 3mm).
Ordering Information
PART
TEMP RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
-40°C to +8±°C
-40°C to +8±°C
-40°C to +8±°C
-40°C to +8±°C
-40°C to +8±°C
PIN-PACKAGE
8 Plastic DIP
8 Plastic DIP
8 SO
MAX410CPA
MAX410BCPA
MAX410CSA
MAX410BCSA
MAX410EPA
MAX410BEPA
MAX410ESA
MAX410BESA
MAX410ETA
Applications
Low-Noise Frequency Synthesizers
8 SO
8 Plastic DIP
8 Plastic DIP
8 SO
Infrared Detectors
High-Quality Audio Amplifiers
Ultra Low-Noise Instrumentation Amplifiers
Bridge Signal Conditioning
8 SO
8 TDFN-EP*
Ordering Information continued at end of data sheet.
*EP—Exposed paddle. Top Mark—AGQ.
Typical Operating Circuit
Pin Configurations
TOP VIEW
1kΩ*
42.2kΩ
1%
NULL
IN-
1
2
3
4
8
7
6
5
NULL
V+
MAX410
200Ω
42.2kΩ**
1%
1%
200Ω
1%
2
3
IN+
V-
OUT
N.C.
1
6
5
1/2 MAX412
7
OUT
-IN
+IN
1/2 MAX412
DIP/SO/TDFN
*TRIM FOR GAIN.
**TRIM FOR COMMON-MODE REJECTION.
OUT1
IN1-
IN1+
V-
1
2
3
4
8
7
6
5
V+
MAX412
LOW-NOISE INSTRUMENTATION AMPLIFIER
OUT2
IN2-
IN2+
DIP/SO
Pin Configurations continued at end of data sheet.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
ABSOLUTE MAXIMUM RATINGS
Supply Voltage.......................................................................12V
Differential Input Current (Note 1) ....................................±20mA
Input Voltage Range........................................................V+ to V-
Common-Mode Input Voltage ..............(V+ + 0.3V) to (V- - 0.3V)
Short-Circuit Current Duration....................................Continuous
MAX414
14-Pin Plastic DIP (derate 10.00mW/°C above +70°C)800mW
14-Pin SO (derate 8.33mW/°C above +70°C)..............667mW
Operating Temperature Ranges:
MAX41_C_ _ .......................................................0°C to +70°C
MAX41_E_ _.....................................................-40°C to +8±°C
Storage Temperature Range.............................-6±°C to +1±0°C
Lead Temperature (soldering, 10s) .................................+300°C
Continuous Power Dissipation (T = +70°C)
A
MAX410/MAX412
8-Pin Plastic DIP (derate 9.09mW/°C above +70°C) ...727mW
8-Pin SO (derate ±.88mW/°C above +70°C)................471mW
8-Pin TDFN (derate 24.4mW/°C above +70°C) .........19±1mW
Note 1: The amplifier inputs are connected by internal back-to-back clamp diodes. In order to minimize noise in the input stage, current-
limiting resistors are not used. If differential input voltages exceeding ±1.0V are applied, limit input current to 20mA.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = ±V, V- = -±V, T = +25°C, unless otherwise noted.)
A
PARAMETER
Input Offset Voltage
SYMBOL
CONDITIONS
MAX410, MAX410B, MAX412, MAX412B
MAX414, MAX414B
MIN
TYP
±120
±1ꢀ0
±ꢁ0
±40
20
MAX
±2ꢀ0
±±20
±1ꢀ0
±ꢁ0
UNITS
V
µV
OS
Input Bias Current
I
nA
nA
kΩ
MΩ
pF
B
Input Offset Current
I
OS
Differential Input Resistance
Common-Mode Input Resistance
Input Capacitance
R
IN(Diff)
R
IN(CM)
40
C
4
IN
10Hz
7
MAX410, MAX412,
MAX414
1000Hz (Note 2)
1.ꢀ
2.4
4.0
Input Noise-Voltage Density
e
nV√Hz
n
MAX410B, MAX412B,
MAX414B
1000Hz (Note 2)
2.4
f
f
= 10Hz
2.6
1.2
O
Input Noise-Current Density
Common-Mode Input Voltage
i
pA√Hz
n
= 1000Hz
O
+±.7/
-±.ꢁ
V
±±.ꢀ
V
CM
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
CMRR
PSRR
V
= ±±.ꢀV
11ꢀ
96
1±0
10±
122
120
dB
dB
CM
V = ±2.4V to ±ꢀ.2ꢀV
S
R = 2kΩ, V = ±±.6V
11ꢀ
110
L
O
Large-Signal Gain
A
dB
V
VOL
R = 600Ω, V = ±±.ꢀV
L
O
+±.6
-±.7
+±.7/
-±.ꢁ
Output Voltage Swing
V
R = 2kΩ
L
OUT
Short-Circuit Output Current
Slew Rate
I
±ꢀ
4.ꢀ
2ꢁ
mA
V/µs
MHz
µs
SC
SR
10kΩ || 20pF load
10kΩ || 20pF load
To 0.1%
Unity-Gain Bandwidth
Settling Time
GBW
t
1.±
1±ꢀ
S
Channel Separation
C
f
O
= 1kHz
dB
S
2
_______________________________________________________________________________________
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
ELECTRICAL CHARACTERISTICS (continued)
(V+ = ꢀV, V- = -ꢀV, T = +25°C, unless otherwise noted.)
A
PARAMETER
Operating Supply-Voltage Range
Supply Current
SYMBOL
CONDITIONS
MIN
TYP
MAX
±ꢀ.2ꢀ
2.7
UNITS
V
V
±2.4
S
I
Per amplifier
2.ꢀ
mA
S
ELECTRICAL CHARACTERISTICS
(V+ = ꢀV, V- = -ꢀV, T = 0°C to +70°C, unless otherwise noted.)
A
PARAMETER
Input Offset Voltage
SYMBOL
CONDITIONS
MIN
TYP
±1ꢀ0
±1
MAX
UNITS
µV
V
±±ꢀ0
OS
Offset Voltage Tempco
Input Bias Current
∆V /∆T Over operating temperature range
µV/°C
nA
OS
I
±100
±ꢁ0
±200
±1ꢀ0
B
Input Offset Current
I
nA
OS
+±.7/
-±.ꢁ
Common-Mode Input Voltage
V
±±.ꢀ
V
CM
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
CMRR
PSRR
V
= ±±.ꢀV
10ꢀ
90
121
97
dB
dB
CM
V = ±2.4V to ±ꢀ.2ꢀV
S
R = 2kΩ, V = ±±.6V
110
90
120
119
L
O
Large-Signal Gain
A
dB
VOL
R = 600Ω, V = ±±.ꢀV
L
O
+±.7/
-±.6
Output Voltage Swing
Supply Current
V
R = 2kΩ
±±.ꢀ
V
OUT
L
I
Per amplifier
±.±
mA
S
ELECTRICAL CHARACTERISTICS
(V+ = ꢀV, V- = -ꢀV, T = -40°C to +85°C, unless otherwise noted.) (Note ±)
A
PARAMETER
Input Offset Voltage
SYMBOL
CONDITIONS
MAX410, MAX410B, MAX412, MAX412B
MAX414, MAX414B
MIN
TYP
±200
±200
±1
MAX
±400
±4ꢀ0
UNITS
V
µV
OS
Offset Voltage Tempco
Input Bias Current
∆V /∆T Over operating temperature range
µV/°C
nA
OS
I
±1±0
±100
±±ꢀ0
±200
B
Input Offset Current
I
nA
OS
+±.7/
-±.6
Common-Mode Input Voltage
V
±±.ꢀ
V
CM
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
CMRR
PSRR
V
= ±±.ꢀV
10ꢀ
90
120
94
dB
dB
CM
V = ±2.4V to ±ꢀ.2ꢀV
S
R = 2kΩ, V = ±±.6V
110
90
11ꢁ
114
L
O
Large-Signal Gain
A
dB
VOL
R = 600Ω, V = +±.4V to -±.ꢀV
L
O
+±.7/
-±.6
Output Voltage Swing
V
R = 2kΩ
L
±±.ꢀ
V
OUT
Supply Current
I
Per amplifier
±.±
mA
S
Note 2: Guaranteed by design.
Note 3: All TDFN devices are 100% tested at T = +2ꢀ°C. Limits over temperature for thin TDFNs are guaranteed by design.
A
_______________________________________________________________________________________
3
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Typical Operating Characteristics
(V+ = ꢀV, V- = -ꢀV, T = +2ꢀ°C, unless otherwise noted.)
A
VOLTAGE-NOISE DENSITY
vs. FREQUENCY
CURRENT-NOISE DENSITY
vs. FREQUENCY
1kHz VOLTAGE NOISE DISTRIBUTION
50
45
40
35
30
25
20
15
10
5
100
10
1
10
V
T
=
5V
V
T
=
5V
S
A
S
A
= +25°C
= +25°C
1/F CORNER = 220Hz
1k 10k
1/F CORNER = 90Hz
1k
1
0
1
10
100
10k
1
10
100
1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
FREQUENCY (Hz)
FREQUENCY (Hz)
INPUT-REFERRED VOLTAGE NOISE (nV/√Hz)
0.1Hz TO 10Hz VOLTAGE NOISE
WIDEBAND NOISE DC TO 20kHz
MAX410-14 toc05
MAX410-14 toc04
100nV/div
(INPUT-REFERRED)
2µV/div
(INPUT-REFERRED)
1s/div
0.2ms/div
OPEN-LOOP GAIN
vs. TEMPERATURE
SHORT-CIRCUIT OUTPUT CURRENT
vs. TEMPERATURE
OUTPUT VOLTAGE SWING
vs. TEMPERATURE
140
120
100
80
50
40
30
10
9
8
7
6
5
4
3
2
1
V
S
=
5V
V = 5V
S
R = 2kΩ
SOURCE
L
V
L
= 5V
S
R = 2kΩ
SINK
60
20
10
0
40
20
0
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
-60
-20
20
60
100
140
°
°
°
TEMPERATURE ( C)
TEMPERATURE ( C)
TEMPERATURE ( C)
4
_______________________________________________________________________________________
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Typical Operating Characteristics (continued)
(V+ = ꢀV, V- = -ꢀV, T = +2ꢀ°C, unless otherwise noted.)
A
SUPPLY CURRENT
vs. TEMPERATURE
SLEW RATE
vs. TEMPERATURE
UNITY-GAIN BANDWIDTH
vs. TEMPERATURE
5
4
10
9
8
7
6
5
4
3
2
1
0
50
40
30
EACH AMPLIFIER
V
S
=
5V
V
S
=
5V
V
S
= 5V
R = 10kΩ II 20pF
R = 10kΩ II 20pF
L
L
3
2
1
0
20
10
0
-60
-20
20
60
100
140
-60
-20
20
60
100
140
-60
-20
20
60
100
140
°
°
°
TEMPERATURE ( C)
TEMPERATURE ( C)
TEMPERATURE ( C)
SMALL-SIGNAL TRANSIENT RESPONSE
LARGE-SIGNAL TRANSIENT RESPONSE
MAX410-14 toc13
MAX410-14 toc12
INPUT
INPUT
3V/div
GND
GND
GND
50mV/div
OUTPUT
50mV/div
OUTPUT
3V/div
GND
200ns/div
1µs/div
°
°
A
V
= +1, R = 499Ω, R = 2kΩ II 20pF, V
=
5V, T = +25 C
A
V
= +1, R = 499Ω, R = 2kΩ II 20pF, V
=
5V, T = +25 C
F
L
S
A
F
L
S
A
WIDEBAND VOLTAGE NOISE
(0.1Hz TO FREQUENCY INDICATED)
TOTAL NOISE DENSITY
vs. UNMATCHED SOURCE RESISTANCE
TOTAL NOISE DENSITY
vs. MATCHED SOURCE RESISTANCE
10
10k
10k
1k
R
S
R
S
R
S
1k
100
10
1
0.1
100
10
@10Hz
@1kHz
@10Hz
@1kHz
1
1
V
=
5V
S
A
V
=
5V
V
=
5V
S
A
S
A
T
= +25°C
T
= +25°C
T
= +25°C
0.1
0.01
0.1
100
1k
10k
100k
1M
10M
1
10
100
1k
10k
100k
1M
1
10
100
1k
10k
100k
1M
BANDWIDTH (Hz)
UNMATCHED SOURCE RESISTANCE (Ω)
MATCHED SOURCE RESISTANCE (Ω)
_______________________________________________________________________________________
5
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Typical Operating Characteristics (continued)
(V+ = ꢀV, V- = -ꢀV, T = +2ꢀ°C, unless otherwise noted.)
A
PERCENTAGE OVERSHOOT
vs. CAPACITIVE LOAD
TOTAL HARMONIC DISTORTION PLUS
NOISE vs. FREQUENCY
MAX412/MAX414
CHANNEL SEPARATION vs. FREQUENCY
-85
-88
150
140
130
120
110
100
90
50
45
40
35
30
25
20
15
10
5
499Ω
30pF
V
T
=
5V
V
T
=
5V
V
A
= 5V
= +25°C
S
A
S
A
S
= +25°C
= +25°C
T
R
S
2kΩ
V
P-P
IN
7V
C
L
-91
500Ω
1kΩ
500Ω
10Ω
V
V
01
-94
A
= -1, R = 2kΩ
S
V
02
-97
A
= -10, R = 200Ω
V
S
CHANNEL SEPARATION = 20 log
IN
-100
0
80
20
100
1k
10k
50k
1
10
100
1000
10,000
1
10
100
1000
FREQUENCY (Hz)
CAPACITANCE LOAD (pF)
FREQUENCY (kHz)
GAIN AND PHASE vs. FREQUENCY
GAIN AND PHASE vs. FREQUENCY
MAX410-14 toc21
MAX410-14 toc20
40
30
0
140
120
100
90
45
0
GAIN
20
-45
-90
-135
-180
-225
GAIN
10
80
60
40
20
-45
0
-10
-20
-30
-40
-50
-60
-90
PHASE
-135
-180
PHASE
0
-225
-270
-20
1
10
FREQUENCY (MHz)
100
0.001
0.0001
0.1
10
1,000
100,000
0.01
1
100
10,000
FREQUENCY (kHz)
6
_______________________________________________________________________________________
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
becomes the dominant term, eventually making the
Applications Information
voltage noise contribution from the MAX410/MAX412/
The MAX410/MAX412/MAX414 provide low voltage-
MAX414 negligible. As the source resistance is further
increased, current noise becomes dominant. For exam-
ple, when the equivalent source resistance is greater
than ±kΩ at 1kHz, the current noise component is larg-
er than the resistor noise. The graph of Total Noise
Density vs. Matched Source Resistance in the Typical
Operating Characteristics shows this phenomenon.
Optimal MAX410/MAX412/MAX414 noise performance
and minimal total noise achieved with an equivalent
source resistance of less than 10kΩ.
noise performance. Obtaining low voltage noise from a
bipolar op amp requires high collector currents in the
input stage, since voltage noise is inversely proportion-
al to the square root of the input stage collector current.
However, op amp current noise is proportional to the
square root of the input stage collector current, and the
input bias current is proportional to the input stage col-
lector current. Therefore, to obtain optimum low-noise
performance, DC accuracy, and AC stability, minimize
the value of the feedback and source resistance.
Voltage Noise Testing
RMS voltage-noise density is measured with the circuit
shown in Figure 2, using the Quan Tech model ꢀ17±
noise analyzer, or equivalent. The voltage-noise density
at 1kHz is sample tested on production units. When
measuring op-amp voltage noise, only low-value, metal
film resistors are used in the test fixture.
Total Noise Density vs. Source Resistance
The standard expression for the total input-referred
noise of an op amp at a given frequency is:
e = e 2 +(R +R )2 i 2 +4kT (R +R )
t
n
p
n
n
p
n
where:
R = Inverting input effective series resistance
The 0.1Hz to 10Hz peak-to-peak noise of the
MAX410/MAX412/MAX414 is measured using the test
n
R = Noninverting input effective series resistance
p
e
= Input voltage-noise density at the frequency of
n
R2
100kΩ
interest
+5V
i
= Input current-noise density at the frequency of
n
interest
0.1µF
T = Ambient temperature in Kelvin (K)
k = 1.2ꢁ x 10-2± J/K (Boltzman’s constant)
R1
100Ω
In Figure 1, R = R± and R = R1 || R2. In a real appli-
p
n
e
D.U.T
t
cation, the output resistance of the source driving the
input must be included with R and R . The following
example demonstrates how to calculate the total out-
put-noise density at a frequency of 1kHz for the
MAX412 circuit in Figure 1.
p
n
R3
100Ω
0.1µF MAX410
MAX412
-5V
MAX414
Figure 1. Total Noise vs. Source Resistance Example
Gain = 1000
4kT at +2ꢀ°C = 1.64 x 10-20
R = 100Ω
R = 100Ω || 100kΩ = 99.9 W
n
p
27Ω
e = 1.ꢀnV/√Hz at 1kHz
n
i = 1.2pA/√Hz at 1kHz
n
e = [(1.ꢀ x 10-9)2 + (100 + 99.9)2 (1.2 x 10-12)2 + (1.64
t
1/2
x 10-20) (100 + 99.9)] = 2.±6nV/√Hz at 1kHz
e
D.U.T
3Ω
n
Output noise density = (100)e = 2.±6µV/√Hz at 1kHz.
t
In general, the amplifier’s voltage noise dominates with
equivalent source resistances less than 200Ω. As the
equivalent source resistance increases, resistor noise
MAX410
MAX412
MAX414
Figure 2. Voltage-Noise Density Test Circuit
_______________________________________________________________________________________
7
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
0.1µF
100kΩ
+V
S
2kΩ
+V
S
10Ω
D.U.T
TO SCOPE x1
IN
22µF
2kΩ
R
= 1MΩ
MAX410
4.7µF
-V
S
-V
100kΩ
S
110kΩ
4.7µF
MAX410
MAX412
MAX414
0.1µF
24.9kΩ
Figure 3. 0.1Hz to 10Hz Voltage Noise Test Circuit
Current Noise Testing
100
80
60
40
20
0
The current-noise density can be calculated, once the
value of the input-referred noise is determined, by
using the standard expression given below:
e
2 - (A
)2(4kT)(R +R )
VCL n p
no
[
]
i
=
A/ Hz
n
(R +R )(A
)
n
p
VCL
where:
R = Inverting input effective series resistance
n
R = Noninverting input effective series resistance
p
e
no
= Output voltage-noise density at the frequency of
0.01
0.1
1
10
100
interest (V/√Hz)
FREQUENCY (Hz)
i
= Input current-noise density at the frequency of
n
interest (A/√Hz)
Figure 4. 0.1Hz to 10Hz Voltage Noise Test Circuit, Frequency
Response
A
VCL
= Closed-loop gain
T = Ambient temperature in Kelvin (K)
k = 1.±ꢁ x 10-2± J/K (Boltzman’s constant)
circuit shown in Figure ±. Figure 4 shows the frequency
response of the circuit. The test time for the 0.1Hz to
10Hz noise measurement should be limited to 10 sec-
onds, which has the effect of adding a second zero to
the test circuit, providing increased attenuation for fre-
quencies below 0.1Hz.
R
and R include the resistances of the input driving
n
p
source(s), if any.
If the Quan Tech model ꢀ17± is used, then the A
terms in the numerator and denominator of the equation
given above should be eliminated because the Quan
VCL
8
_______________________________________________________________________________________
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
909Ω
R
f
499Ω
+5V
0.022µF
R
n
10kΩ
MAX410
MAX412
MAX414
100Ω
D.U.T
e
no
D.U.T
V
OUT
3900pF
MAX410
MAX412
MAX414
R
p
10kΩ
V
IN
0.022µF
-5V
Figure 5. Current-Noise Test Circuit
Figure 6a. Voltage Follower Circuit with 3900pF Load
Tech measures input-referred noise. For the circuit in
Figure ꢀ, assuming R is approximately equal to R
and the measurement is taken with the Quan Tech
model ꢀ17±, the equation simplifies to:
V
=
5V
S
A
p
n
T
= +25°C
INPUT
1V/div
GND
GND
e
2 - (1.64 × 10-20)(20 × 10±)
no
[
]
i
=
A/ Hz
n
(20 × 10±)
OUTPUT
1V/div
Input Protection
To protect amplifier inputs from excessive differential
input voltages, most modern op amps contain input
protection diodes and current-limiting resistors. These
resistors increase the amplifier’s input-referred noise.
They have not been included in the MAX410/MAX412/
MAX414, to optimize noise performance. The MAX410/
MAX412/MAX414 do contain back-to-back input pro-
tection diodes which will protect the amplifier for differ-
ential input voltages of ±0.1V. If the amplifier must be
protected from higher differential input voltages, add
external current-limiting resistors in series with the op
amp inputs to limit the potential input current to less
than 20mA.
1µs/div
Figure 6b. Driving 3900pF Load as Shown in Figure 6a
When driving capacitive loads greater than ±900pF,
add an output isolation resistor to the voltage follower
circuit, as shown in Figure 7a. This resistor isolates the
load capacitance from the amplifier output and restores
the phase margin. Figure 7b is a photograph of the
response of a MAX410/MAX412/MAX414 driving a
0.01ꢀµF load with a 10Ω isolation resistor
The capacitive-load driving performance of the
MAX410/MAX412/MAX414 is plotted for closed-loop
gains of -1V/V and -10V/V in the % Overshoot vs.
Capacitive Load graph in the Typical Operating
Characteristics.
Capacitive-Load Driving
Driving large capacitive loads increases the likelihood
of oscillation in amplifier circuits. This is especially true
for circuits with high loop gains, like voltage followers.
The output impedance of the amplifier and a capacitive
load form an RC network that adds a pole to the loop
response. If the pole frequency is low enough, as when
driving a large capacitive load, the circuit phase mar-
gin is degraded.
Feedback around the isolation resistor RI increases the
accuracy at the capacitively loaded output (see Figure ꢁ).
The MAX410/MAX412/MAX414 are stable with a 0.01µF
load for the values of R and C shown. In general, for
I
F
In voltage follower circuits, the MAX410/MAX412/
MAX414 remain stable while driving capacitive loads
as great as ±900pF (see Figures 6a and 6b).
decreased closed-loop gain, increase R or C . To drive
I
F
F
larger capacitive loads, increase the value of C .
_______________________________________________________________________________________
9
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
10kΩ
499Ω
C
F
MAX410
MAX412
MAX414
82pF
1kΩ
V
IN
R
I
10Ω
D.U.T
V
OUT
R
I
10Ω
C
L
D.U.T
V
0.01µF
OUT
MAX410
MAX412
MAX414
V
IN
909Ω
C > 0.015µF
L
Figure 7a. Capacitive-Load Driving Circuit
Figure 8. Capacitive-Load Driving Circuit with Loop-Enclosed
Isolation Resistor
V
=
5V
S
A
T
= +25°C
INPUT
1V/div
10kΩ
GND
GND
1
8
7
NULL
NULL
V+
MAX410
OUTPUT
1V/div
1µs/div
Figure 9. MAX410 Offset Null Circuit
Figure 7b. Driving a 0.015µF Load with a 10Ω Isolation Resistor
is between V+ - 1.4V and V- + 1.±V for total supply volt-
ages between 4.ꢁV and 10V. The output voltage range,
referenced to the supply voltages, decreases slightly
over temperature, as indicated in the ±ꢀV Electrical
Characteristics tables. Operating characteristics at total
supply, voltages of less than 10V are guaranteed by
design and PSRR tests.
TDFN Exposed Paddle Connection
On TDFN packages, there is an exposed paddle that
does not carry any current but should be connected to
V- (not the GND plane) for rated power dissipation.
Total Supply Voltage Considerations
Although the MAX410/MAX412/MAX414 are specified
with ±ꢀV power supplies, they are also capable of sin-
gle-supply operation with voltages as low as 4.ꢁV. The
minimum input voltage range for normal amplifier oper-
ation is between V- + 1.ꢀV and V+ - 1.ꢀV. The minimum
room-temperature output voltage range (with 2kΩ load)
MAX410 Offset Voltage Null
The offset null circuit of Figure 9 provides approximately
±4ꢀ0µV of offset adjustment range, sufficient for zeroing
offset over the full operating temperature range,
10 ______________________________________________________________________________________
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Ordering Information (continued)
Pin Configurations (continued)
PART
TEMP RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
-40°C to +ꢁꢀ°C
-40°C to +ꢁꢀ°C
-40°C to +ꢁꢀ°C
-40°C to +ꢁꢀ°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
-40°C to +ꢁꢀ°C
-40°C to +ꢁꢀ°C
-40°C to +ꢁꢀ°C
-40°C to +ꢁꢀ°C
PIN-PACKAGE
ꢁ Plastic DIP
ꢁ Plastic DIP
ꢁ SO
TOP VIEW
MAX412CPA
MAX412BCPA
MAX412CSA
MAX412BCSA
MAX412EPA
MAX412BEPA
MAX412ESA
MAX412BESA
MAX414CPD
MAX414BCPD
MAX414CSD
MAX414BCSD
MAX414EPD
MAX414BEPD
MAX414ESD
MAX414BESD
OUT1
IN1-
IN1+
V+
1
2
3
4
5
6
7
14 OUT4
13 IN4-
12 IN4+
11 V-
4
3
1
ꢁ SO
ꢁ Plastic DIP
ꢁ Plastic DIP
ꢁ SO
MAX414
IN2+
IN2-
OUT2
10 IN3+
2
9
8
IN3-
OUT3
ꢁ SO
14 Plastic DIP
14 Plastic DIP
14 SO
DIP/SO
14 SO
14 Plastic DIP
14 Plastic DIP
14 SO
14 SO
Chip Information
MAX410 TRANSISTOR COUNT: 1±2
MAX412 TRANSISTOR COUNT: 262
MAX414 TRANSISTOR COUNT: 2 ✕ 262 (hybrid)
PROCESS: Bipolar
______________________________________________________________________________________ 11
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
12 ______________________________________________________________________________________
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
INCHES
MILLIMETERS
DIM
A
MIN
MAX
0.069
0.010
0.019
0.010
MIN
1.35
0.10
0.35
0.19
MAX
1.75
0.25
0.49
0.25
0.053
0.004
0.014
0.007
N
A1
B
C
e
0.050 BSC
1.27 BSC
E
0.150
0.228
0.016
0.157
0.244
0.050
3.80
5.80
0.40
4.00
6.20
1.27
E
H
H
L
VARIATIONS:
INCHES
1
MILLIMETERS
DIM
D
MIN
MAX
0.197
0.344
0.394
MIN
4.80
8.55
9.80
MAX
5.00
N
8
MS012
AA
TOP VIEW
0.189
0.337
0.386
D
8.75 14
10.00 16
AB
D
AC
D
C
A
B
0 -8
e
A1
L
FRONT VIEW
SIDE VIEW
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE, .150" SOIC
APPROVAL
DOCUMENT CONTROL NO.
REV.
1
21-0041
B
1
______________________________________________________________________________________ 13
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
L
A
D2
D
A2
PIN 1 ID
1
N
1
C0.35
b
[(N/2)-1] x e
REF.
E
E2
PIN 1
INDEX
AREA
DETAIL A
e
k
A1
C
L
C
L
L
L
e
e
A
DALLAS
SEMICONDUCTOR
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE, 6, 8 & 10L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
APPROVAL
DOCUMENT CONTROL NO.
REV.
NUMBER OF LEADS SHOWN ARE FOR REFERENCE ONLY
1
2
21-0137
D
14 ______________________________________________________________________________________
Single/Dual/Quad, 28MHz, Low-Noise,
Low-Voltage, Precision Op Amps
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
COMMON DIMENSIONS
SYMBOL
MIN.
0.70
2.90
2.90
0.00
0.20
MAX.
0.80
3.10
3.10
0.05
0.40
A
D
E
A1
L
k
0.25 MIN.
0.20 REF.
A2
PACKAGE VARIATIONS
PKG. CODE
T633-1
N
6
D2
E2
e
JEDEC SPEC
MO229 / WEEA
MO229 / WEEC
b
[(N/2)-1] x e
1.90 REF
1.95 REF
2.00 REF
1.50–0.10 2.30–0.10 0.95 BSC
1.50–0.10 2.30–0.10 0.65 BSC
0.40–0.05
0.30–0.05
T833-1
8
T1033-1
10
1.50–0.10 2.30–0.10 0.50 BSC MO229 / WEED-3 0.25–0.05
DALLAS
SEMICONDUCTOR
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE, 6, 8 & 10L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
APPROVAL
DOCUMENT CONTROL NO.
REV.
2
2
21-0137
D
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 15
© 200± Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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