IRFR110ATF [ROCHESTER]
4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3;
| 型号： | IRFR110ATF |
| 厂家： | 
Rochester Electronics |
| 描述： | 4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：991K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFR/U110A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
W
RDS(on) = 0.4
ID = 4.7 A
Improved Gate Charge
Extended Safe Operating Area
D-PAK
I-PAK
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
W
Lower RDS(ON) : 0.289
(Typ.)
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Drain-to-Source Voltage
Value
100
4.7
3
Units
VDSS
V
O
Continuous Drain Current (TC=25 C)
ID
A
O
Continuous Drain Current (TC=100 C)
1
IDM
VGS
EAS
IAR
Drain Current-Pulsed
19
A
V
O
+
_
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
20
2
59
4.7
2
mJ
A
O
1
O
EAR
dv/dt
1
Repetitive Avalanche Energy
mJ
V/ns
W
O
3
Peak Diode Recovery dv/dt
6.5
2.5
20
O
O
*
Total Power Dissipation (TA=25
Total Power Dissipation (TC=25
Linear Derating Factor
)
)
C
O
PD
C
W
O
0.16
W/ C
Operating Junction and
TJ , TSTG
- 55 to +150
300
Storage Temperature Range
O
C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
TL
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
Rq
Junction-to-Case
--
--
--
6.26
50
JC
O
Rq
*
Junction-to-Ambient
Junction-to-Ambient
C/W
JA
Rq
110
JA
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFR/U110A
O
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
m
VGS=0V,ID=250 A
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
V
V/
V
100 --
--
O
m
D BV/DTJ
VGS(th)
ID=250 A
See Fig 7
C
-- 0.12 --
m
A
V
DS=5V,ID=250
2.0
--
--
--
4.0
VGS=20V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
100
IGSS
nA
V
GS=-20V
VDS=100V
DS=80V,TC=125
--
-- -100
--
--
--
10
IDSS
Drain-to-Source Leakage Current
m
A
O
C
V
--
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
4
RDS(on)
W
VGS=10V,ID=2.35A
VDS=40V,ID=2.35A
--
--
O
0.4
gfs
Ciss
Coss
Crss
td(on)
tr
4
--
--
--
--
--
--
--
--
--
--
--
3.23 --
190 240
W
O
VGS=0V,VDS=25V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
65
25
30
40
70
50
12
--
55
21
10
14
28
18
8.5
1.6
4.1
pF
See Fig 5
VDD=50V,ID=5.6A,
W
RG=24
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
4
5
O
See Fig 13
O
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain(“ Miller” ) Charge
V
DS=80V,VGS=10V,
Qgs
Qgd
nC
ID=5.6A
4
5
O
O
--
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
IS
ISM
VSD
trr
--
--
--
--
--
--
4.7
19
1.5
--
Integral reverse pn-diode
A
1
in the MOSFET
O
O
4
O
V
C
--
TJ=25 ,IS=4.7A,VGS=0V
O
ns
C
TJ=25 ,IF=5.6A
85
m
C
4
Qrr
m
diF/dt=100A/ s
-- 0.23 --
O
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
L=4mH, IAS=4.7A, VDD=25V, RG=27W , Starting TJ =25oC
2
O
ISD _ 5.6A, di/dt 250A/ s, V DD _ BVDSS , Starting TJ =25o
3
_
<
m
C
<
<
O
_
<
4
Pulse Test : Pulse Width = 250 ms, Duty Cycle 2%
O
Essentially Independent of Operating Temperature
5
O
N-CHANNEL
POWER MOSFET
IRFR/U110A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
Top :
1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1
1
10
10
150oC
Bottom : 4.5 V
0
0
10
10
25 oC
@ Notes :
1. V = 0 V
GS
@ Notes :
2. V = 40 V
DS
µ
- 55oC
1. 250 s Pulse Test
3. 250 s Pulse Test
µ
2. T = 25oC
C
-1
-1
10
10
-1
0
1
2
4
6
8
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.8
0.6
0.4
0.2
0.0
1
10
V
= 10 V
GS
0
10
V
= 20 V
GS
@ Notes :
1. V = 0 V
o
150
C
GS
o
o
25
C
2. 250 s Pulse Test
µ
@ Note : T = 25
C
J
-1
10
0
5
10
15
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
350
280
210
140
70
C
iss= Cgs+ Cgd ( Cds= shorted )
V
DS = 20 V
Coss= Cds+ C
gd
10
Crss= C
gd
V
DS = 50 V
C iss
V
DS = 80 V
C oss
5
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
@ Notes : ID = 5.6 A
8 10
0
0
0
1
0
2
4
6
10
10
Q , Total Gate Charge [nC]
VDS , Drain-Source Voltage [V]
G
N-CHANNEL
POWER MOSFET
IRFR/U110A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
@ Notes :
0.9
@ Notes :
1. V = 10 V
1. V = 0 V
GS
GS
2. I = 2.8 A
D
2. I = 250 A
µ
D
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
-75
-50
-25
0
25
50
75
100
125
150
175
T , Junction Temperature [ oC]
T , Junction Temperature [ oC]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
5
2
10
Operation in This Area
is Limited by RDS(on)
4
3
2
1
0
1
100 s
10
µ
1 ms
10 ms
DC
0
10
@ Notes :
1. T = 25oC
C
2. T = 150oC
J
3. Single Pulse
-1
10
0
1
2
25
50
75
100
125
150
10
10
10
T , Case Temperature [ oC]
V
DS , Drain-Source Voltage [V]
c
Fig 11. Thermal Response
D=0.5
@ Notes :
1. Zθ JC(t)=6.26 oC/W Max.
0.2
100
2. Duty Factor, D=t/t2
0.1
1
3. TJM-TC=PDM*Zθ JC(t)
0.05
PDM
0.02
0.01
t1
t2
single pulse
10-1
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
N-CHANNEL
POWER MOSFET
IRFR/U110A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
VGS
Same Type
as DUT
50KW
Qg
12V
200nF
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
N-CHANNEL
POWER MOSFET
IRFR/U110A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
IS
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
UHC™
VCX™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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[E-
●
●
●
●
●
●
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10µA (MAX.)
Quality and reliability
This pagePrint version
Design tools
@ V = 100V
DS
●
Lower R
: 0.289Ω (Typ.)
DS(ON)
technical information
buy products
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Product status/pricing/packaging
technical support
my Fairchild
Product
Product status
Full Production
Pricing*
Package type
Leads
Packing method
company
IRFU110ATU
$0.339 TO-251(IPAK)
3
RAIL
* 1,000 piece Budgetary Pricing
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© Copyright 2002 Fairchild Semiconductor
Product Folder - Fairchild P/N IRFR110A - 100V N-Channel A-FET / Substitute of IRFR110
SEARCH | Parametric | Cross Reference
sp
Fairchild Semiconductor
GO
Home >> Find products >>
find products
IRFR110A
Related Links
Products groups
100V N-Channel A-FET / Substitute of
IRFR110
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
Request samples
How to order products
Datasheet
Download this
datasheet
Contents
Features | Product status/pricing/packaging
Product Change Notices
(PCNs)
PDF
Support
Features
Distributor and field sales
representatives
e-mail this datasheet
[E-
●
●
●
●
●
●
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10µA (MAX.)
Quality and reliability
This pagePrint version
Design tools
@ V = 100V
DS
●
Lower R
: 0.289Ω (Typ.)
DS(ON)
technical information
buy products
back to top
Product status/pricing/packaging
technical support
my Fairchild
Product
IRFR110ATF
IRFR110ATM
Product status
Pricing*
Package type
$0.339 TO-252(DPAK)
$0.339 TO-252(DPAK)
Leads
Packing method
TAPE REEL
company
Full Production
Full Production
2
2
TAPE REEL
* 1,000 piece Budgetary Pricing
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