FJPF9020TU [ROCHESTER]
2A, 550V, PNP, Si, POWER TRANSISTOR, LEAD FREE, TO-220F, 3 PIN;
| 型号： | FJPF9020TU |
| 厂家： | 
Rochester Electronics |
| 描述： | 2A, 550V, PNP, Si, POWER TRANSISTOR, LEAD FREE, TO-220F, 3 PIN 局域网 晶体管 |
| 文件： | 总8页 (文件大小：876K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJPF9020
Monolithic Construction With Built In Base-Emitter
Shunt Resistors
•
•
•
High Collector-Base Breakdown Voltage : BV
= -550V
CBO
High DC Current Gain : h = 550 @ V = -4V, I = -1A (Typ.)
FE
CE
C
Industrial Use
TO-220F
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Darlington Transistor
Equivalent Circuit
C
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
- 550
- 550
- 6
Units
V
V
V
V
CBO
CEO
EBO
B
V
V
I
I
Collector Current (DC)
Collector Current (Pulse)
- 2
A
C
- 4
A
CP
R1
R2
P
T
Collector Dissipation (T =25°C)
15
W
°C
°C
C
C
Junction Temperature
Storage Temperature
150
E
J
R1 600 Ω
R2 150 Ω
T
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
- 550
- 550
-6
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
= - 100uA, I = 0
CBO
CEO
EBO
C
E
BV
BV
= - 500uA, I = 0
V
C
B
I = - 200mA, I = 0
V
E
C
I
I
V
V
V
= - 550V, I = 0
-100
-20
µA
mA
CBO
EBO
CE
EB
CE
E
Emitter Cut-off Current
= - 6V, I = 0
-10
550
-1.0
-1.5
C
h
DC Current Gain
= - 4V, I = - 1A
400
700
- 1.5
- 2.0
FE
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
I
= - 1A, I = - 20mA
V
V
CE
C
C
B
= - 1A, I = - 20mA
BE
B
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002
Typical Characteristics
-3.0
1000
100
10
VCE = - 4V
IB = - 40mA
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
125oC
75oC
IB = - 15mA
25oC
- 25oC
IB = - 3mA
IB = - 1.5mA
- 0.03
-0
-1
-2
-3
-4
-5
-0.1
-1
- 4
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
-3
-2
-1
-0
-4
-3
-2
-1
-0
IC / IB = 50
125oC
75oC
IC = - 2A
IC = - 1A
- 25oC
25oC
- 0.2
-1
- 4
-1E-3
-0.01
-0.1
- 0.4
IB [A], BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. V (sat) vs. I Characteristics
Figure 4. Collector-Emitter Saturation Voltage
CE
B
-2.0
-1.5
-1.0
-0.5
-0.0
1000
VCE = - 4V
f = 1MHz
100
125oC
75oC
25oC
- 25oC
10
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-0
-5
-10
-15
-20
-25
VBE [V], BASE-EMITTER VOLTAGE
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002
Typical Characteristics (Continued)
20
15
10
5
-10
IC (Pulse)
100ms
10ms
IC (DC)
-1
-0.1
-0.01
-1E-3
Single Pulse
Ta=25oC
0
-1
-10
-100
-1000
0
25
50
75
100
125
150
175
TC [oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Forward Bias Safe Operating Area
Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002
Package Demensions
TO-220F
2.54 ±0.20
10.16 ±0.20
(7.00)
ø3.18 ±0.10
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A, June 2002
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As used herein:
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7
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z
z
z
High Collector-Base Breakdown Voltage : BV
High DC Current Gain : h = 550 @ V = -4V, I = -1A (Typ.)
Industrial Use
= -550V
CBO
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FE
CE
C
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Product status/pricing/packaging
Print version
Product
Product status
Pb-free Status
Pricing* Package type Leads
Packing method
Package Marking Convention**
Line 1:
(Fairchild logo)
$Y
FJPF9020TTU
Full Production
$1.02
TO-220F
3
RAIL
Line 2: &3 Line 3: J9020
Line 1:
(Fairchild logo)
$Y
FJPF9020TU
Full Production
$1.02
TO-220F
3
RAIL
Line 2: J9020 Line 3: &3
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
contact a Fairchild distributor to obtain samples
Indicates product with Pb-free second-level interconnect. For more information click here.
Package marking information for product FJPF9020 is available. Click here for more information .
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Models
Package & leads
Condition
Temperature range
PSPICE
Vcc range
Software version
Revision date
TO-220F-3
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Electrical/Thermal
-25°C to 125°C
0V to -5V
9.2
Jul 12, 2005
Qualification Support
Click on a product for detailed qualification data
Product
FJPF9020TTU
FJPF9020TU
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