FAN5066M [ROCHESTER]

Switching Controller, Current/voltage-mode, 1000kHz Switching Freq-Max, PDSO20, SOIC-20;
FAN5066M
型号: FAN5066M
厂家: Rochester Electronics    Rochester Electronics
描述:

Switching Controller, Current/voltage-mode, 1000kHz Switching Freq-Max, PDSO20, SOIC-20

开关 光电二极管
文件: 总19页 (文件大小:921K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
www.fairchildsemi.com  
FAN5066  
Ultra Low Voltage Synchronous DC-DC Controller  
Description  
Features  
The FAN5066 is a synchronous mode DC-DC controller IC  
which provides an adjustable output voltage for ultra-low  
voltage applications, down to 400mV. The FAN5066 uses a  
high level of integration to deliver load currents in excess of  
19A from a 5V source with minimal external circuitry.  
Synchronous-mode operation offers optimum efficiency over  
the entire output voltage range, and the internal oscillator  
can be programmed from 80KHz to 1MHz for additional  
flexibility in choosing external components. The FAN5066  
also offers integrated functions including a four-bit  
• Output adjustable from 400mV to 3.5V  
• Synchronous Rectification  
• Adjustable operation from 80KHz to 1MHz  
• Integrated Power Good and Enable functions  
• Overvoltage protection  
• Overcurrent protection  
• Drives N-channel MOSFETs  
• 20 pin SOIC or TSSOP package  
Applications  
• Power supply DDR SDRAM VTT  
• Power Supply HSTL  
DAC-controlled reference, Power Good, Output Enable,  
over-voltage protection and current limiting.  
• Power Supply for ASICs  
• Adjustable ultra-low voltage step-down power supply  
Block Diagram  
+12V  
+5V  
FAN5066  
5
4
+
1
OSC  
13  
12  
+
+5V  
7
DIGITAL  
CONTROL  
+
VO  
+
9
16  
CNTRL  
20  
1.24V  
REFERENCE  
4-BIT  
DAC  
VREF  
3
POWER  
GOOD  
PWRGD  
19 18 17  
VID2  
8
2
ENABLE  
VID4  
VID1  
VID3  
REV. 2.1.4 11/13/01  
FAN5066  
PRODUCT SPECIFICATION  
Pin Assignments  
CEXT  
ENABLE  
PWRGD  
IFB  
1
2
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
VREF  
VID1  
3
VID2  
4
VID3  
VFB  
5
CNTRL  
GNDA  
GNDD  
VCCQP  
HIDRV  
GNDP  
FAN5066  
VCCA  
VCCP  
VID4  
6
7
8
LODRV  
GNDP  
9
10  
Pin Definitions  
Pin Number Pin Name Pin Function Description  
1
CEXT  
Oscillator Capacitor Connection. Connecting an external capacitor to this pin sets  
the internal oscillator frequency. Layout of this pin is critical to system performance.  
See Application Information for details.  
2
3
4
ENABLE Output Enable. A logic LOW on this pin will disable the output. An internal pull-up  
resistor allows for either open collector or TTL compatibility.  
PWRGD Power Good Flag. An open collector output that will be at logic LOW if the output  
voltage is not within ±12% of the nominal output voltage setpoint.  
IFB  
High Side Current Feedback. Pins 4 and 5 are used as the inputs for the current  
feedback control loop. Layout of these traces is critical to system performance. See  
Application Information for details.  
5
VFB  
Voltage Feedback. Pin 5 is used as the input for the voltage feedback control loop and  
as the low side current feedback input. See Application Information for details regarding  
correct layout.  
6
7
8
VCCA  
VCCP  
VID4  
Analog VCC. Connect to system 5V supply and decouple with a 0.1µF ceramic  
capacitor.  
Power VCC for low side FET driver. Connect to system 5V supply and place a 1µF  
ceramic capacitor for decoupling and local charge storage.  
VID4 Input. A logic 1 on this open collector/TTL input will enable the VID3–VID0 inputs  
to set the output from 2.1V to 3.5V, and a logic 0 will set the output from 1.3V to 2.05V,  
as shown in Table 1. Pullup resistors are internal to the controller.  
9
10, 11  
12  
LODRV  
GNDP  
Low Side FET Driver. Connect this pin to the gate of an N-channel MOSFET for  
synchronous operation. The trace from this pin to the MOSFET gate should be < 0.5".  
Power Ground. Return pin for high currents flowing in pins 7 and 13 (VCCP and  
VCCQP). Connect to a low impedance ground.  
HIDRV  
VCCQP  
High Side FET Driver. Connect this pin to the gate of an N-channel MOSFET. The  
trace from this pin to the MOSFET gate should be < 0.5".  
13  
Power VCC. For high side FET driver. VCCQP must be connected to a voltage of at  
least VCCA + V  
(MOSFET), and place a 1µF ceramic capacitor for decoupling  
GS,ON  
and local charge storage. See Application Information for details  
14  
15  
GNDD  
GNDA  
CNTRL  
Digital Ground. Return path for digital logic. Connect to a low impedance system  
ground plane to minimize ground loops.  
Analog Ground. Return path for low power analog circuitry. This pin should be  
connected to a low impedance system ground plane to minimize ground loops.  
16  
Voltage Control. The voltage forced on this pin determines the output voltage of the  
converter.  
17-19  
VID1-VID3 Voltage Identification Code Inputs. These open collector/TTL compatible inputs will  
program the output voltage of the reference over the ranges specified in Table 1.  
Pull-up resistors are internal to the controller.  
20  
VREF  
Reference Voltage Test Point. This pin provides access to the DAC output and should  
be decoupled to ground using 0.1µF capacitor.  
2
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
Absolute Maximum Ratings  
Supply Voltages, VCCA, VCCP, VCCQP to GND  
13V  
18V  
Supply Voltage VCCQP, Charge Pump (V +VCCA)  
IN  
Voltage Identification Code Inputs, VID3-VID0  
VREF Output Current  
13V  
3mA  
150°C  
Junction Temperature, T  
Storage Temperature  
J
-65 to 150°C  
300°C  
Lead Soldering Temperature, 10 seconds  
Operating Conditions  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Units  
Supply Voltage, VCCA, VCCP  
4.75  
5
5.25  
V
V
Input Logic HIGH  
2.0  
Input Logic LOW  
0.8  
70  
12  
V
Ambient Operating Temp  
Output Driver Supply, VCCQP  
0
°C  
V
8.5  
Electrical Specications  
(V  
CCA  
= 5V, V  
= 900mV, f  
= 300 KHz, and T = +25°C using circuit in Figure 1, unless otherwise noted)  
osc A  
CNTRL  
The denotes specications which apply over the full operating temperature range.  
Parameter  
Conditions  
Min.  
Typ.  
Max. Units  
Initial Voltage Setpoint  
I
= 0.8A, V  
V
= 1.25V  
= 900mV  
1.237 1.250 1.263  
V
mV  
LOAD  
CTRL  
CTRL  
891  
900  
909  
Output Temperature Drift  
T = 0 to 70°C V  
= 1.25V  
= 900mV  
+6  
+4  
mV  
mV  
A
OUT  
OUT  
V
Load Regulation  
I
= 0.8A to 3A  
-20  
±2  
mV  
mV  
mVpk  
V
LOAD  
Line Regulation  
V
= 4.75V to 5.25V  
IN  
Output Ripple  
20MHz BW, I  
= 3A  
±13  
LOAD  
DAC Output Voltage  
DAC Accuracy  
See Table 1  
1.3  
-3  
3.4  
+3  
%
Short Circuit Detect Threshold  
Output Driver Rise and Fall Time  
Output Driver Deadtime 1  
Output Driver Deadtime 2  
Turn-on Response Time  
Oscillator Range  
90  
120  
80  
5
150  
mV  
nsec  
See Figure 3  
See Figure 3  
See Figure 3  
%/f  
OSC  
80  
nsec  
I
= 0A to 3A  
10  
msec  
KHz  
KHz  
LOAD  
80  
1000  
330  
Oscillator Frequency  
PWRGD threshold  
C
EXT  
= 100 pF  
270  
300  
Logic High  
Logic Low  
93  
88  
107 %V  
112 %V  
OUT  
OUT  
PWRGD Minimum Operating  
Voltage  
1.0  
95  
V
Max Duty Cycle  
90  
%
Control Pin Input Current  
V
CTRL  
= 400mV to 3.5V  
235  
µA  
REV. 2.1.4 11/13/01  
3
FAN5066  
PRODUCT SPECIFICATION  
Table 1. DAC Output Voltage Programming Codes  
VID4  
0
VID3  
1
VID2  
1
VID1  
1
V
REF  
1.30V  
1.40V  
1.50V  
1.60V  
1.70V  
1.80V  
1.90V  
2.00V  
No Output  
2.2V  
0
1
1
0
0
1
0
1
0
1
0
0
0
0
1
1
0
0
1
0
0
0
0
1
0
0
0
0
1
1
1
1
1
1
1
0
1
1
0
1
2.4V  
1
1
0
0
2.6V  
1
0
1
1
2.8V  
1
0
1
0
3.0V  
1
0
0
1
3.2V  
1
0
0
0
3.4V  
Note:  
1. 0 = processor pin is tied to GND.  
1 = processor pin is open.  
4
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
Typical Operating Characteristics  
(VCCA, VCCD = 5V, f  
= 280 KHz, and T = +25°C using circuit in Figure 1, unless otherwise noted)  
A
OSC  
Load Regulation V  
= 0.9V  
Efficiency vs. Output Current  
OUT  
80  
70  
60  
50  
40  
30  
20  
0.895  
0.890  
0.885  
0.880  
0.875  
0.870  
0
0.5  
1
1.5  
2
2.5  
3
0.1 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7  
3
Output Current (A)  
Output Current (A)  
Output Voltage vs. Output Current,  
RSENSE = 6mΩ  
Oscillator Frequency vs. CEXT  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1250  
1050  
850  
650  
450  
250  
50  
0
1
2
3
4
5
18  
39  
75  
150  
300  
560  
Output Current (A)  
CEXT (pf)  
REV. 2.1.4 11/13/01  
5
FAN5066  
PRODUCT SPECIFICATION  
Typical Operating Characteristics (continued)  
Transient Response, 3A to 0.1A  
Output Ripple, 900m @ 3A  
Time (10µs/division)  
Time (1µs/division)  
Transient Response, 0.1A to 3A  
Time (1µs/division)  
Switching Waveforms, 3A Load  
Output Startup, System Power-up  
HIDRV  
pin  
LODRV  
pin  
Time (1µs/division)  
Time (5ms/division)  
6
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
Application Circuit  
+12V  
L1  
+5V  
2.2µH  
C
D1  
1N4735A  
IN  
C2  
0.1µF  
C1  
0.1µF  
R1  
47Ω  
330µF  
C6  
0.1µF  
C5  
1µF  
+5V  
FDS6984S  
R2  
Q1  
Q2  
R
L2  
4.7µH  
SENSE  
R5  
2KΩ  
4.7Ω  
C4  
1µF  
VO  
11  
10  
9
8
7
6
5
4
3
2
1
25mΩ  
R3  
12  
13  
14  
15  
16  
17  
18  
19  
20  
C
OUT  
470µF  
4.7Ω  
R6  
324Ω  
U2  
FAN4041  
U1  
FAN5066  
R7  
909Ω  
C9  
0.1µF  
C
EXT  
100pF  
C3  
0.1µF  
VID4  
VCC  
ENABLE  
C7  
VID3  
VID2  
VID1  
10KΩ  
R4  
C8  
0.1µF  
PWRGD  
0.1µF  
Figure 1. Application Circuit for 900mV @ 3A  
REV. 2.1.4 11/13/01  
7
FAN5066  
PRODUCT SPECIFICATION  
Table 2. FAN5066 Application Bill of Materials for 900mV @ 3A  
Reference  
Manufacturer Part #  
Quantity Description  
100nF, 50V Capacitor  
Requirements/Comments  
C13, C6C9  
Panasonic  
7
2
1
1
1
1
1
1
1
ECU-V1H104ZFX  
C45  
Panasonic  
ECU-V1C105ZFX  
1µF, 16V Capacitor  
100pF Capacitor  
C
C
C
Panasonic  
ECU-V1H101JCG  
5%, C0G  
ext  
AVX  
330µF, 10V Tantalum  
470µF, 6.3V Tantalum  
6.2V Zener Diode  
I
= 1.3A  
rms  
IN  
TPSE337*010R0100  
AVX  
ESR = 100mΩ  
OUT  
TPSE477*006R0100  
D1  
L1  
L2  
Q1  
Motorola  
1N4735A  
Coiltronics  
MP2-2R2  
2.2µH, 1.4A Inductor  
4.7µH, 5A inductor  
DCR ~ 130mΩ  
See Note 1.  
Coiltronics  
UP2B-4R7  
DCR ~ 17mΩ  
Fairchild  
FDS6984S  
N-Channel MOSFET with  
Integrated Schottky  
R1  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
1
2
1
1
1
1
1
1
47Ω  
R2-3  
R4  
4.7Ω  
10KΩ  
R5  
2.0KΩ  
324Ω  
R6  
R7  
909Ω  
R
25mΩ  
SENSE  
U1  
Fairchild  
DC/DC Controller  
FAN5066M  
U2  
Fairchild  
1
Shunt Regulator  
FAN4041  
Notes:  
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching. L1 may be  
omitted if desired.  
8
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
Application Circuit  
+12V  
L1  
+5V  
1.5µH  
D1  
1N4735A  
C2  
0.1µF  
C11  
680µF  
C1  
0.1µF  
R1  
47Ω  
C6  
0.1µF  
C5  
1µF  
R2  
Q1  
Q2  
L2  
4.7Ω  
C4  
1µF  
VO  
11  
10  
9
8
7
6
5
4
3
2
1
1.5µH  
R3  
VDDQ  
12  
13  
14  
15  
16  
17  
18  
19  
20  
C
*
OUT  
4.7Ω  
R5  
499  
U1  
FAN5066  
R6  
499  
C10  
100pF  
C9  
0.1µF  
VCC  
ENABLE  
C7  
*Refer to Table 3 for value  
of C  
10KΩ  
0.1µF  
R4  
C8  
.
OUT  
0.1µF  
PWRGD  
Figure 2. 12A Application Circuit for DDR VTT  
REV. 2.1.4 11/13/01  
9
FAN5066  
PRODUCT SPECIFICATION  
Table 3. FAN5066 Application Bill of Materials for DDR VTT  
Reference  
Manufacturer Part #  
Quantity Description  
Requirements/Comments  
C12, C6C9  
Panasonic  
ECU-V1H104ZFX  
6
2
1
1
4
1
100nF, 50V Capacitor  
C45  
C10  
Panasonic  
ECU-V1C105ZFX  
1µF, 16V Capacitor  
100pF Capacitor  
Panasonic  
ECU-V1H101JCG  
5%, C0G  
C11  
Sanyo  
6SP680M  
680µF, 6.3V OSCON  
820µF, 4V OSCON  
6.2V Zener Diode  
I
= 4.8A  
RMS  
C
Sanyo  
4SP820M  
ESR < 12mΩ  
OUT  
D1  
Motorola  
1N4735A  
L1  
Coiltronics  
UP1B-1R5  
Optional 1.5µH, 4A Inductor  
DCR ~ 20mΩ  
See Note 1.  
L2  
Coiltronics  
UP4B-1R5  
1
2
1.5µH, 13A Inductor  
DCR ~ 4mΩ  
Q12  
Fairchild  
FDS6680S  
N-Channel MOSFET  
w/ Integrated Schottky  
R
= 17m@  
DS(ON)  
V = 4.5V  
GS  
R1  
Any  
Any  
Any  
Any  
1
2
1
2
1
47Ω  
R2-3  
R4  
4.7Ω  
10KΩ  
R5-6  
U1  
499Ω  
Fairchild  
DC/DC Controller  
FAN5066M  
Notes:  
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching. L1 may be  
omitted if desired.  
Test Circuit  
+12V  
47Ω  
1µF  
t
t
F
R
VCCQP  
HIDRV  
90%  
50%  
90%  
50%  
4.7Ω  
4.7Ω  
HIDRV  
+5V  
VCCA  
VCCP  
0.1µF  
1µF  
3000pF  
3000pF  
10%  
10%  
t
t
DT2  
DT1  
LODRV  
50%  
50%  
LODRV  
GNDA GNDD GNDP  
Figure 3. Output Drive Test Circuit and Timing Diagram  
10  
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
VCCQP, which is supplied from an external 12V source  
Application Information  
through a series resistor or from a charge-pump circuit  
powered from 5V if 12V is not available. The LODRV driver  
has a power supply pin, VCCP, which can be supplied from  
either the 12V or 5V source. The resulting voltages are suffi-  
cient to provide the gate to source drive to the external  
The FAN5066 Controller  
The FAN5066 is a programmable synchronous DC-DC con-  
troller IC. When designed around the appropriate external  
components, the FAN5066 can be configured to deliver more  
than 19A of output current. The FAN5066 functions as a  
fixed frequency PWM step down regulator.  
MOSFETs required in order to achieve a low R  
.
DS,ON  
Power Good (PWRGD)  
The FAN5066 Power Good function is designed in accor-  
dance with the Pentium II DC-DC converter specifications  
and provides a continuous voltage monitor on the VFB pin.  
The circuit compares the VFB signal to the VREF voltage  
and outputs an active-low interrupt signal to the CPU should  
the power supply voltage deviate more than ±12% of its  
nominal setpoint. The Power Good flag provides no other  
control function to the FAN5066.  
Main Control Loop  
Refer to the FAN5066 Block Diagram on page 1. The  
FAN5066 implements “summing mode control”, which is  
different from both classical voltage-mode and current-mode  
control. It provides superior performance to either by allow-  
ing a large converter bandwidth over a wide range of output  
loads.  
The control loop of the regulator contains two main sections:  
the analog control block and the digital control block. The  
analog section consists of signal conditioning amplifiers  
feeding into a set of comparators which provide the inputs to  
the digital control block. The signal conditioning section  
accepts inputs from the IFB (current feedback) and VFB  
(voltage feedback) pins and sets up two controlling signal  
paths. The first, the voltage control path, amplifies the differ-  
ence between the VFB signal the reference voltage from the  
DAC and presents the output to one of the summing ampli-  
fier inputs. The second, current control path, takes the differ-  
ence between the IFB and VFB pins and presents the  
resulting signal to another input of the summing amplifier.  
These two signals are then summed together with the slope  
compensation input from the oscillator. This output is then  
presented to a comparator, which provides the main PWM  
control signal to the digital control block.  
Output Enable (ENABLE)  
The FAN5066 will accept an open collector/TTL signal for  
controlling the output voltage. The low state disables the out-  
put voltage. When disabled, the PWRGD output is in the low  
state. If an enable is not required in the circuit, this pin may  
be left open.  
Over-Voltage Protection  
The FAN5066 constantly monitors the output voltage for  
protection against over voltage conditions. If the voltage at  
the VFB pin exceeds 20% of the selected program voltage,  
an over-voltage condition is assumed and the FAN5066 dis-  
ables the output drive signal to the external MOSFETs. The  
DC-DC converter returns to normal operation after the fault  
has been removed.  
Over-Current Protection  
The digital control block takes the analog comparator inputs  
and the main clock signal from the oscillator to provide the  
appropriate pulses to the HIDRV and LODRV output pins.  
These two outputs control the external power MOSFETs.  
The digital block utilizes high speed Schottky transistor  
logic, allowing the FAN5066 to operate at clock speeds as  
high as 1MHz.  
Current sense is implemented in the FAN5066 to reduce the  
duty cycle of the output drive signal to the MOSFETs when  
an over-current condition is detected. The voltage drop  
created by the output current flowing across a sense resistor  
is presented to an internal comparator. When the voltage  
developed across the sense resistor exceeds the 120mV com-  
parator threshold voltage, the FAN5066 reduces the output  
duty cycle to help protect the power devices. The DC-DC  
converter returns to normal operation after the fault has been  
removed.  
There are additional comparators in the analog control sec-  
tion whose function is to set the point at which the FAN5066  
enters its pulse skipping mode during light loads, as well as  
the point at which the current limit comparator disables the  
output drive signals to the external power MOSFETs.  
Oscillator  
The FAN5066 oscillator section uses a fixed current capaci-  
tor charging configuration. An external capacitor (CEXT) is  
used to set the oscillator frequency between 80KHz and  
1MHz. This scheme allows maximum flexibility in choosing  
external components.  
High Current Output Drivers  
The FAN5066 contains two identical high current output  
drivers that utilize high speed bipolar transistors in a push-  
pull configuration. The drivers’ power and ground are sepa-  
rated from the chip’s power and ground for switching noise  
immunity. The HIDRV driver has a power supply pin,  
REV. 2.1.4 11/13/01  
11  
FAN5066  
PRODUCT SPECIFICATION  
In general, a higher operating frequency decreases the peak  
ripple current flowing in the output inductor, thus allowing  
the use of a smaller inductor value. In addition, operation at  
higher frequencies decreases the amount of energy storage  
that must be provided by the bulk output capacitors during  
load transients due to faster loop response of the controller.  
mately 4.5V. When the MOSFET Q1 turns on, the voltage at  
the source of the MOSFET is equal to 5V. The capacitor  
voltage follows, and hence provides a voltage at VCCQP  
equal to almost 10V. The Schottky diode D1 is required to  
provide the charge path when the MOSFET is off, and  
reverses biases when VCCQP goes to 10V. The charge pump  
capacitor (CP) needs to be a high Q, high frequency capaci-  
tor. A 1µF ceramic capacitor is recommended here.  
Unfortunately, the efficiency losses due to switching of the  
MOSFETs increase as the operating frequency is increased.  
Thus, efficiency is optimized at lower frequencies. An oper-  
ating frequency of 300KHz is a typical choice which opti-  
mizes efficiency and minimizes component size while  
maintaining excellent regulation and transient performance  
under all operating conditions.  
+5V  
D1  
VCCQP  
HIDRV  
Q1  
CP  
Design Considerations and Component  
Selection  
L2 RS  
VO  
PWM/PFM  
Control  
Additional information on design and component selection  
may be found in Fairchild Semiconductor’s Application  
Note 53.  
COUT  
LODRV  
GNDP  
Q2  
D2  
MOSFET Selection  
This application requires N-channel Logic Level Enhance-  
ment Mode Field Effect Transistors. Desired characteristics  
are as follows:  
Figure 4. Charge Pump Configuration  
Method 2. 12V Gate Bias  
Figure 5 illustrates how a 12V source can be used to bias  
VCCQP. A 47resistor is used to limit the transient current  
into the VCCQP pin and a 1µF capacitor is used to filter the  
VCCQP supply. This method provides a higher gate bias  
• Low Static Drain-Source On-Resistance,  
R
< 20m(lower is better)  
DS,ON  
• Low gate drive voltage, V = 4.5V rated  
GS  
• Power package with low Thermal Resistance  
• Drain-Source voltage rating > 15V.  
voltage (V ) to the high side MOSFET than the charge  
GS  
pump method, and therefore reduces the R  
and the  
DS,ON  
The on-resistance (R ) is the primary parameter for  
DS,ON  
resulting power loss within the MOSFET. In designs where  
efficiency is a primary concern, the 12V gate bias method is  
recommended. A 6.2V Zener diode, D1, is used to clamp the  
voltage at VCCQP to a maximum of 12V and ensure that the  
absolute maximum voltage of the IC will not be exceeded.  
MOSFET selection. The on-resistance determines the power  
dissipation within the MOSFET and therefore significantly  
affects the efficiency of the DC-DC Converter. For details  
and a spreadsheet on MOSFET selection, refer to Applica-  
tions Bulletin AB-8  
+5V  
MOSFET Gate Bias  
+12V  
47Ω  
D1  
The high side MOSFET gate driver can be biased by one of  
two methods–Charge Pump or 12V Gate Bias. The charge  
pump method has the advantage of requiring only +5V as an  
input voltage to the converter, but the 12V method will real-  
ize increased efficiency by providing an increased V to the  
GS  
high side MOSFETs.  
VCCQP  
Q1  
HIDRV  
1µF  
L2 RS  
VO  
PWM/PFM  
Control  
Method 1. Charge Pump (Bootstrap)  
COUT  
Figure 4 shows the use of a charge pump to provide gate bias  
to the high side MOSFET when +12V is unavailable. Capac-  
itor CP is the charge pump used to boost the voltage of the  
FAN5066 output driver. When the MOSFET Q1 switches  
off, the source of the MOSFET is at approximately 0V  
because of the MOSFET Q2. (The Schottky D2 conducts for  
only a very short time, and is not relevent to this discussion.)  
CP is charged through the Schottky diode D1 to approxi-  
LODRV  
Q2  
D2  
GNDP  
Figure 5. Gate Bias Configuration  
12  
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
Inductor Selection  
Output Voltage vs. Output Current  
Choosing the value of the inductor is a tradeoff between  
allowable ripple voltage and required transient response. The  
system designer can choose any value within the allowed  
minimum to maximum range in order to either minimize rip-  
ple or maximize transient performance. The first order equa-  
tion (close approximation) for minimum inductance is:  
RSENSE = 6mΩ  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
(Vin Vout  
)
Vout  
ESR  
------------------------------ ---------- -----------------  
Lmin  
=
×
×
f
Vin Vripple  
0.5  
0
where:  
V
= Input Power Supply  
in  
0
5
10  
15  
20  
25  
V
out  
= Output Voltage  
Output Current (A)  
f = DC/DC converter switching frequency  
ESR = Equivalent series resistance of all output capacitors in  
parallel  
Figure 6. FAN5066 Short Circuit Characteristic  
The output voltage does not return to its nominal value until  
the output current is reduced to a value within the safe oper-  
ating range for the DC-DC converter  
V
= Maximum peak to peak output ripple voltage  
ripple  
budget.  
The first order equation for maximum allowed inductance is:  
Schottky Selection  
(Vin Vout)D Vtb  
------------------------------------m------------  
×
A schottky diode is not required in Figures 1 and 2, because  
the low-side MOSFETs have built in schottkies using Fair-  
child SyncFET technology. If some other type of MOSFET  
is used, a schottky must be used in anti-parallel with the low-  
side MOSFET. Selection of a schottky is determined by the  
maximum output. In the converter of Figure 1, maximum  
output current is 3A, and suppose the MOSFET has a body  
Lmax = 2CO  
I2PP  
where:  
C
= The total output capacitance  
o
I
= Maximum to minimum load transient current  
= The output voltage tolerance budget allocated to load  
pp  
V
tb  
transient  
= Maximum duty cycle for the DC/DC converter  
diode V = 0.75V at this current. The schottky must have at  
f
D
m
least 100mV less V at the same current to ensure that the  
f
(usually 95%).  
body diode does not turn on. The MBRS130L diode has V =  
f
0.45V typical at 3A at 25°C, and so is a suitable choice.  
Some margin should be maintained away from both L  
min  
and L  
. Adding margin by increasing L almost always  
max  
Output Filter Capacitors  
adds expense since all the variables are predetermined by  
The output bulk capacitors of a converter help determine its  
output ripple voltage and its transient response. It has  
already been seen in the section on selecting an inductor that  
the ESR helps set the minimum inductance, and the capaci-  
tance value helps set the maximum inductance. For most  
converters, however, the number of capacitors required is  
determined by the transient response and the output ripple  
voltage, and these are determined by the ESR and not the  
capacitance value. That is, in order to achieve the necessary  
ESR to meet the transient and ripple requirements, the  
capacitance value required is already very large.  
system performance except for C , which must be increased  
o
to increase L. Adding margin by decreasing L can either be  
done by purchasing capacitors with lower ESR or by increas-  
ing the DC/DC converter switching frequency. The  
FAN5066 is capable of running at high switching frequen-  
cies and provides significant cost savings for the newer CPU  
systems that typically run at high supply current.  
FAN5066 Short Circuit Current Characteristics  
The FAN5066 short circuit current characteristic includes a  
hysteresis function that prevents the DC-DC converter from  
oscillating in the event of a short circuit. Figure 6 shows the  
typical characteristic of the DC-DC converter circuit with a  
6.8 msense resistor. The converter exhibits a normal load  
regulation characteristic until the voltage across the resistor  
exceeds the internal short circuit threshold of 120mV  
(= 17.5A * 6.8m). At this point, the internal comparator  
trips and signals the controller to reduce the converter’s  
duty cycle to approximately 20%. This causes a drastic  
reduction in the output voltage as the load regulation  
collapses into the short circuit control mode. With a 40mΩ  
output short,the voltage is reduced to 15A * 40m= 600mV.  
The most commonly used choice for output bulk capacitors  
is aluminum electrolytics, because of their low cost and low  
ESR. The only type of aluminum capacitor used should be  
those that have an ESR rated at 100kHz. Consult Application  
Bulletin AB-14 for detailed information on output capacitor  
selection.  
The output capacitance should also include a number of  
small value ceramic capacitors placed as close as possible to  
the processor; 0.1µF and 0.01µF are recommended values.  
REV. 2.1.4 11/13/01  
13  
FAN5066  
PRODUCT SPECIFICATION  
Input Filter  
PCB Layout Guidelines  
The DC-DC converter design may include an input inductor  
between the system +5V supply and the converter input as  
shown in Figure 6. This inductor serves to isolate the +5V  
supply from the noise in the switching portion of the DC-DC  
converter, and to limit the inrush current into the input capac-  
itors during power up. A value of 2.5µH is recommended.  
• Placement of the MOSFETs relative to the FAN5066 is  
critical. Place the MOSFETs such that the trace length of  
the HIDRV and LODRV pins of the FAN5066 to the FET  
gates is minimized. A long lead length on these pins will  
cause high amounts of ringing due to the inductance of the  
trace and the gate capacitance of the FET. This noise  
radiates throughout the board, and, because it is switching  
at such a high voltage and frequency, it is very difficult to  
suppress.  
• In general, all of the noisy switching lines should be kept  
away from the quiet analog section of the FAN5066. That  
is, traces that connect to pins 9, 12, and 13 (LODRV,  
HIDRV and VCCQP) should be kept far away from the  
traces that connect to pins 1 through 5, and pin 16.  
• Place the 0.1µF decoupling capacitors as close to the  
FAN5066 pins as possible. Extra lead length on these  
reduces their ability to suppress noise.  
It is necessary to have some low ESR aluminum electrolytic  
capacitors at the input to the converter. These capacitors  
deliver current when the high side MOSFET switches on.  
Figure 7 shows 3 x 1000µF, but the exact number required  
will vary with the speed and type of the processor. For the  
top speed Klamath and Deschutes, the capacitors should be  
rated to take 7A of ripple current. Capacitor ripple current  
rating is a function of temperature, and so the manufacturer  
should be contacted to find out the ripple current rating at the  
expected operational temperature. For details on the design  
of an input filter, refer to Applications Bulletin AB-15.  
• Each VCC and GND pin should have its own via to the  
appropriate plane. This helps provide isolation between  
pins.  
2.5µH  
5V  
Vin  
• Surround the CEXT timing capacitor with a ground trace.  
Be sure to place a ground or power plane underneath the  
capacitor for further noise isolation, in order to provide  
additional shielding to the oscillator (pin 1) from the noise  
on the PCB. In addition, place this capacitor as close to  
pin 1 as possible.  
1000µF, 10V  
Electrolytic  
0.1µF  
• Place the MOSFETs, inductor, and Schottky as close  
together as possible for the same reasons as in the first  
bullet above. Place the input bulk capacitors as close to  
the drains of the high side MOSFETs as possible. In  
addition, placement of a 0.1µF decoupling cap right on  
the drain of each high side MOSFET helps to suppress  
some of the high frequency switching noise on the input  
of the DC-DC converter.  
Figure 7. Input Filter  
Droop Resistor  
Figure 8 shows a converter using a “droop resistor”, R . The  
D
function of the droop resistor is to improve the transient  
response of the converter, potentially reducing the number of  
output capacitors required. In operation, the droop resistor  
causes the output voltage to be slightly lower at heavy load  
current than it otherwise would be. When the load transitions  
from heavy to light current, the output can swing up farther  
without exceeding limits, because it started from a lower  
voltage, thus reducing the capacitor requirements.  
• Place the output bulk capacitors as close to the CPU as  
possible to optimize their ability to supply instantaneous  
current to the load in the event of a current transient.  
Additional space between the output capacitors and the  
CPU will allow the parasitic resistance of the board traces  
to degrade the DC-DC converter’s performance under  
severe load transient conditions, causing higher voltage  
deviation. For more detailed information regarding  
capacitor placement, refer to Application Bulletin AB-5.  
• The traces that run from the FAN5066 IFB (pin 4) and  
VFB (pin 5) pins should be run together next to each other  
and Kelvin connected to the sense resistor. Running these  
lines together rejects some of the common mode noise  
that is presented to the FAN5066 feedback input. Try, as  
much as possible, to run the noisy switching signals  
(HIDRV, LODRV & VCCQP) on one layer, but use the  
inner layers for power and ground only. If the top layer is  
being used to route all of the noisy switching signals, use  
the bottom layer to route the analog sensing sign VFB and  
IFB.  
Q1  
RSENSE  
RDROOP  
L2  
VO  
COUT  
Q2  
IFB  
VFB  
Figure 8. Use of a Droop Resistor  
• A PC Board Layout Checklist is available from Fairchild  
Applications. Ask for Application Bulletin AB-11.  
14  
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
Additional Information  
For additional information contact your local Fairchild  
Semiconductor representative, or visit us on our website at  
www.fairchildsemi.com.  
REV. 2.1.4 11/13/01  
15  
FAN5066  
PRODUCT SPECIFICATION  
Mechanical Dimensions 20 Lead SOIC  
Notes:  
Inches  
Millimeters  
Symbol  
Notes  
1. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
Min.  
Max.  
Min.  
Max.  
2. "D" and "E" do not include mold flash. Mold flash or  
protrusions shall not exceed .010 inch (0.25mm).  
A
.093  
.004  
.013  
.009  
.496  
.291  
.104  
.012  
.020  
.013  
.512  
.299  
2.35  
0.10  
0.33  
0.23  
12.60  
7.40  
2.65  
0.30  
0.51  
0.32  
13.00  
7.60  
A1  
B
3. "L" is the length of terminal for soldering to a substrate.  
4. Terminal numbers are shown for reference only.  
5. "C" dimension does not include solder finish thickness.  
6. Symbol "N" is the maximum number of terminals.  
C
D
E
5
2
2
e
.050 BSC  
1.27 BSC  
H
h
.394  
.010  
.016  
.419  
.029  
.050  
10.00  
0.25  
0.40  
10.65  
0.75  
1.27  
L
3
6
N
α
20  
20  
0°  
8°  
0°  
8°  
ccc  
.004  
0.10  
20  
11  
E
H
1
10  
h x 45°  
D
C
A1  
A
α
SEATING  
PLANE  
C –  
e
B
L
LEAD COPLANARITY  
ccc C  
16  
REV. 2.1.4 11/13/01  
PRODUCT SPECIFICATION  
FAN5066  
Mechanical Dimensions 20 Lead TSSOP  
Notes:  
Inches  
Millimeters  
Min. Max.  
Symbol  
Notes  
1. Dimensioning and tolerancing per ANSI Y14.5M-1982.  
Min.  
Max.  
2. "D" and "E" do not include mold flash. Mold flash or  
protrusions shall not exceed .006 inch (0.15mm).  
A
.047  
.006  
.012  
.008  
.260  
.177  
1.20  
0.15  
0.30  
0.20  
6.60  
4.50  
A1  
B
.002  
.007  
.004  
.252  
.169  
0.05  
0.19  
0.09  
6.40  
4.30  
3. "L" is the length of terminal for soldering to a substrate.  
4. Terminal numbers are shown for reference only.  
5. Symbol "N" is the maximum number of terminals.  
C
D
E
2
2
e
.026 BSC  
.252 BSC  
.018 .030  
0.65 BSC  
6.40 BSC  
0.45 0.75  
H
L
3
5
N
α
20  
20  
0°  
8°  
0°  
8°  
ccc  
.004  
0.10  
D
E
H
C
A1  
A
α
SEATING  
PLANE  
C –  
L
B
LEAD COPLANARITY  
ccc C  
e
REV. 2.1.4 11/13/01  
17  
FAN5066  
PRODUCT SPECIFICATION  
Ordering Information  
Product Number  
FAN5066M  
Package  
20 pin SOIC  
20 pin TSSOP  
20 pin TSSOP  
FAN5066MTC  
FAN5066MTCX  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER  
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
11/13/01 0.0m 001  
Stock#DS30005066  
2001 Fairchild Semiconductor Corporation  

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