DS1005M-250+ [ROCHESTER]

SILICON DELAY LINE, TRUE OUTPUT, PDIP8, 0.300 INCH, LOW PROFILE, DIP-8;
DS1005M-250+
型号: DS1005M-250+
厂家: Rochester Electronics    Rochester Electronics
描述:

SILICON DELAY LINE, TRUE OUTPUT, PDIP8, 0.300 INCH, LOW PROFILE, DIP-8

光电二极管 输出元件 逻辑集成电路 延迟线
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中文:  中文翻译
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DS1005  
5-Tap Silicon Delay Line  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
All-silicon time delay  
IN  
1
2
14  
13  
VCC  
NC  
IN  
1
2
16  
15  
VCC  
NC  
5 taps equally spaced  
Delay tolerance ±2 ns or ±3%, whichever is  
greater  
Stable and precise over temperature and  
voltage range  
Leading and trailing edge accuracy  
Economical  
Auto-insertable, low profile  
Standard 14-pin DIP, 8-pin DIP, or 16-pin  
SOIC  
NC  
NC  
NC  
TAP 2  
NC  
3
4
5
6
7
12  
11  
10  
9
TAP 1  
NC  
NC  
TAP 2  
NC  
3
4
5
6
7
8
14  
13  
12  
11  
10  
9
NC  
TAP 1  
NC  
TAP 3  
NC  
TAP 3  
NC  
TAP 4  
GND  
TAP 4  
NC  
8
TAP 5  
GND  
TAP 5  
DS1005 14-Pin DIP (300-mil)  
See Mech. Drawings Section  
DS1005S 16-Pin SOIC  
(300-mil)  
See Mech. Drawings Section  
Tape and reel available for surface-mount  
Low-power CMOS  
TTL/CMOS compatible  
Vapor phase, IR and wave solderability  
Custom delays available  
Quick turn prototypes  
1
VCC  
8
IN  
2
7
TAP 1  
TAP 3  
TAP 5  
TAP 2  
TAP 4  
GND  
3
4
6
5
Extended temperature range available  
DS1005M 8-Pin DIP (300-mil)  
See Mech. Drawings Section  
PIN DESCRIPTION  
TAP 1-TAP 5 - TAP Output Number  
VCC  
GND  
NC  
- +5 Volts  
- Ground  
- No Connection  
- Input  
IN  
DESCRIPTION  
The DS1005 5-Tap Silicon Delay Line provides five equally spaced taps with delays ranging from 12 ns  
to 250 ns, with an accuracy of ±2 ns or ±3%, whichever is greater. This device is offered in a standard 14-  
pin DIP, making it compatible with existing delay line products. Space-saving 8-pin DIPs and 16-pin  
SOICs are also available. Both enhanced performance and superior reliability over hybrid technology is  
achieved by the combination of a 100% silicon delay line and industry standard DIP and SOIC  
packaging. In order to maintain complete pin compatibility, DIP packages are available with hybrid lead  
configurations. The DS1005 reproduces the input logic level at each tap after the fixed delay specified by  
the dash number in Table 1. The device is designed with both leading and trailing edge accuracy. Each  
tap is capable of driving up to ten 74LS loads. Dallas Semiconductor can customize standard products to  
meet special needs. For special requests and rapid delivery, call (972) 371–4348.  
1 of 6  
111799  
DS1005  
LOGIC DIAGRAM Figure 1  
PART NUMBER DELAY TABLE (tPHL, tPLH) Table 1  
PART NO.  
DS1005-60  
DS1005-75  
DS1005-100  
DS1005-125  
DS1005-150  
DS1005-175  
DS1005-200  
DS1005-250  
TAP 1  
12 ns  
15 ns  
20 ns  
25 ns  
30 ns  
35 ns  
40 ns  
50 ns  
TAP 2  
24 ns  
30 ns  
40 ns  
50 ns  
60 ns  
70 ns  
80 ns  
100 ns  
TAP 3  
36 ns  
45 ns  
60 ns  
75 ns  
TAP 4  
48 ns  
60 ns  
TAP 5  
60 ns  
75 ns  
100 ns  
125 ns  
150 ns  
175 ns  
200 ns  
250 ns  
80 ns  
100 ns  
120 ns  
140 ns  
160 ns  
200 ns  
90 ns  
105 ns  
120 ns  
150 ns  
Custom delays available  
2 of 6  
DS1005  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Any Pin Relative to Ground  
Operating Temperature  
-1.0V to +7.0V  
0°C to 70°C  
Storage Temperature  
Soldering Temperature  
Short Circuit Output Current  
-55°C to +125°C  
260°C for 10 seconds  
50 mA for 1 second  
* This is a stress rating only and functional operation of the device at these or any other conditions above  
those indicated in the operation sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods of time may affect reliability.  
DC ELECTRICAL CHARACTERISTICS  
(0°C to 70°C; VCC = 5.0V ± 5%)  
PARAMETER  
SYM  
TEST  
MIN TYP  
MAX  
UNITS NOTES  
CONDITION  
Supply Voltage  
High Level Input  
Voltage  
VCC  
VIH  
4.75  
2.2  
5.00  
5.25  
VCC + 0.5  
V
V
1
1
Low Level Input  
Voltage  
Input Leakage  
Current  
VIL  
II  
-0.5  
-1.0  
0.8  
1.0  
70  
V
1
u A  
mA  
mA  
mA  
0.0V VI VCC  
Active Current  
ICC  
IOH  
IOL  
VCC=Max;  
Period=Min.  
VCC=Min.  
VOH=4  
VCC=Min.  
VOL=0.5  
40  
2
High Level Output  
Current  
Low Level Output  
Current  
-1.0  
12  
AC ELECTRICAL CHARACTERISTICS  
(TA = 25°C; VCC = 5V ± 5%)  
PARAMETER  
Input Pulse Width  
Input to Tap Delay  
(leading edge)  
SYMBOL  
tWI  
MIN  
TYP  
MAX UNITS  
NOTES  
7
3, 4, 5, 6  
40% of Tap 5 tPLH  
ns  
ns  
tPLH  
Table 1  
Table 1  
Input to Tap Delay  
(trailing edge)  
tPHL  
ns  
3, 4, 5, 6  
Power-up Time  
tPU  
Period  
100  
ms  
ns  
4 (tWI)  
7
CAPACITANCE  
PARAMETER  
Input Capacitance  
(TA = 25°C)  
MAX UNITS  
10 pF  
SYMBOL  
MIN  
TYP  
5
NOTES  
CIN  
3 of 6  
DS1005  
NOTES:  
1. All voltages are referenced to ground.  
2. Measured with outputs open.  
3. VCC = 5V @ 25°C. Delays accurate on both rising and falling edges within ±2 ns or ±3%, whichever  
is greater.  
4. See Test Conditions.  
5. The combination of temperature variations from 25°C to 0°C or 25°C to 70°C and voltage variations  
from 5.0V to 4.75V or 5.0V to 5.25V may produce an additional input-to-tap delay shift of ±1.5 ns or  
±4%, whichever is greater.  
6. All tap delays tend to vary unidirectionally with temperature or voltage. For example, if TAP 1 slows  
down, all other taps will also slow down; TAP 3 can never be faster than TAP 2.  
7. Pulse width and duty cycle specifications may be exceeded; however, accuracy will be application-  
sensitive (decoupling, layout, etc.).  
TERMINOLOGY  
Period: The time elapsed between the leading edge of the first pulse and the leading edge of the  
following pulse.  
tWI (Pulse Width): The elapsed time on the pulse between the 1.5V point on the leading edge and the  
1.5V point on the trailing edge, or the 1.5V point on the trailing edge and the 1.5V point on the leading  
edge.  
tRISE (Input Rise Time): The elapsed time between the 20% and the 80% point on the leading edge of the  
input pulse.  
tFALL (Input Fall Time): The elapsed time between the 80% and the 20% point on the trailing edge of the  
input pulse.  
tPLH (Time Delay, Rising): The elapsed time between the 1.5V point on the leading edge of the input  
pulse and the 1.5V point on the leading edge of any tap output pulse.  
tPHL (Time Delay, Falling): The elapsed time between the 1.5V point on the trailing edge of the input  
pulse and the 1.5V point on the trailing edge of any tap output pulse.  
4 of 6  
DS1005  
TEST SETUP DESCRIPTION  
Figure 3 illustrates the hardware configuration used for measuring the timing parameters on the DS1005.  
The input waveform is produced by a precision pulse generator under software control. Time delays are  
measured by a time interval counter (20 ps resolution) connected between the input and each tap. Each  
tap is selected and connected to the counter by a VHF switch control unit. All measurements are fully  
automated, with each instrument controlled by a central computer over an IEEE 488 bus.  
TEST CONDITIONS  
INPUT:  
Ambient Temperature  
Supply Voltage (VCC)  
Input Pulse  
25°C ±=3°C  
5.0V ±=0.1V  
High = 3.0V ±=0.1V  
Low = 0.0V ±=0.1V  
Source Impedance  
Rise and Fall Time  
Pulse Width  
50 ohm maximum  
3.0 ns maximum  
500 ns  
Period  
1 µs  
OUTPUT:  
Each output is loaded with the equivalent of a 74F04 input gate. Delay is measured at the 1.5V level on  
the rising and falling edge.  
NOTE:  
Above conditions are for test only and do not restrict the operation of the device under other data sheet  
conditions.  
5 of 6  
DS1005  
TIMING DIAGRAM: SILICON DELAY LINE Figure 2  
DALLAS SEMICONDUCTOR TEST CIRCUIT Figure 3  
6 of 6  

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