BC636TA [ROCHESTER]
1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN;
| 型号： | BC636TA |
| 厂家： | 
Rochester Electronics |
| 描述： | 1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92, 3 PIN 开关 晶体管 |
| 文件： | 总6页 (文件大小：789K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2009
BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
•
Complement to BC635
TO-92
1
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
a
Symbol
Parameter
Value
-45
Units
V
VCER
VCES
VCEO
VEBO
IC
Collector-Emitter Voltage at RBE=1KΩ
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-45
V
-45
V
-5
V
-1
A
ICP
Peak Collector Current
Base Current
-1.5
-100
1
A
IB
mA
W
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature
TJ
150
-65 ~ 150
°C
°C
TSTG
Electrical Characteristics
T = 25°C unless otherwise noted
a
Symbol
BVCEO
ICBO
Parameter
Test Condition
Min.
Typ.
Max.
Units
V
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
IC= -10mA, IB=0
-45
VCB= -30V, IE=0
VEB= -5V, IC=0
-0.1
-10
μA
IEBO
μA
hFE1
hFE2
hFE3
DC Current Gain
VCE= -2V, IC= -5mA
25
40
25
V
V
CE= -2V, IC= -150mA
CE= -2V, IC= -500mA
250
V
CE (sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= -500mA, IB= -50mA
VCE= -2V, IC= -500mA
-0.5
-1
V
V
VBE (on)
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA,
f=50MHz
100
MHz
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
www.fairchildsemi.com
1
Package Marking and Ordering Information
Device Marking
BC636
Device
Package
TO-92
TO-92
TO-92
BC636
BC636BU
BC636TA
BC636
BC636
BC636
BC636TAR
BC636TF
TO-92
TO-92
BC636
BC636
BC636TFR
BC636_J35Z
TO-92
TO-92
BC636
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-500
1000
IB = - 1.8 mA
VCE = - 2V
IB = - 1.6 mA
-400
IB = - 1.4 mA
IB = - 1.2 mA
-300
-200
-100
-0
IB = - 1.0 mA
IB = - 0.8 mA
IB = - 0.6 mA
100
IB = - 0.4 mA
IB = - 0.2 mA
10
-0
-10
-20
-30
-40
-50
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
-1000
IC = 10 IB
VCE = - 2V
VBE(sat)
-1
-100
-10
-1
-0.1
VCE(sat)
-0.01
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
100
f=1MHz
10
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
www.fairchildsemi.com
3
Mechanical Dimensions
TO-92
+0.25
–0.15
4.58
0.46 0.10
+0.10
–0.05
1.27TYP
[1.27 0.20
1.27TYP
[1.27 0.20
0.38
]
]
3.60 0.20
(R2.29)
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
www.fairchildsemi.com
4
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Current Transfer Logic™
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TinyPWM¥
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™
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Saving our world, 1mW/W/kW at a time™
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™
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Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
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Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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