BC556BZL1G [ROCHESTER]
100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN;
| 型号： | BC556BZL1G |
| 厂家： | 
Rochester Electronics |
| 描述： | 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN |
| 文件： | 总8页 (文件大小：738K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
2
BASE
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
V
V
V
Vdc
CEO
CBO
EBO
3
BC556
BC557
BC558
−65
−45
−30
EMITTER
Collector - Base Voltage
Emitter - Base Voltage
Vdc
BC556
BC557
BC558
−80
−50
−30
TO−92
CASE 29
STYLE 17
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
I
C
−100
−200
mAdc
I
I
CM
1
1
2
2
Base Current − Peak
−200
mAdc
BM
3
3
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
Total Device Dissipation @ T = 25°C
P
625
5.0
mW
mW/°C
A
D
D
Derate above 25°C
Total Device Dissipation @ T = 25°C
P
1.5
12
W
mW/°C
C
Derate above 25°C
MARKING DIAGRAM
Operating and Storage Junction
Temperature Range
T , T
J
−55 to +150
°C
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
BC
55xx
AYWW G
G
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
JC
R
83.3
q
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
A
Y
= 6B, 7A, 7B, 7C, or 8B
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 3
BC556B/D
BC556B, BC557A, B, C, BC558B
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(I = −2.0 mAdc, I = 0)
BC556
BC557
BC558
−65
−45
−30
−
−
−
−
−
−
C
B
Collector−Base Breakdown Voltage
V
V
V
V
(I = −100 mAdc)
C
BC556
BC557
BC558
−80
−50
−30
−
−
−
−
−
−
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
BC556
BC557
BC558
−5.0
−5.0
−5.0
−
−
−
−
−
−
E
C
Collector−Emitter Leakage Current
I
CES
(V
CES
(V
CES
= −40 V)
= −20 V)
BC556
BC557
BC558
BC556
BC557
BC558
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
nA
(V
CES
= −20 V, T = 125°C)
mA
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −10 mAdc, V = −5.0 V)
C
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
−
−
−
120
120
180
420
−
90
−
−
−
800
220
460
800
−
CE
150
270
−
170
290
500
120
180
300
(I = −2.0 mAdc, V = −5.0 V)
C
CE
(I = −100 mAdc, V = −5.0 V)
C
CE
−
−
−
−
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −0.5 mAdc)
V
V
CE(sat)
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
C
B
(I = −10 mAdc, I = see Note 1)
C
B
(I = −100 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −0.5 mAdc)
V
V
V
BE(sat)
−
−
−0.7
−1.0
−
−
C
B
(I = −100 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter On Voltage
(I = −2.0 mAdc, V = −5.0 Vdc)
V
BE(on)
−0.55
−
−0.62
−0.7
−0.7
−0.82
C
CE
(I = −10 mAdc, V = −5.0 Vdc)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I = −10 mA, V = −5.0 V, f = 100 MHz)
BC556
BC557
BC558
−
−
−
280
320
360
−
−
−
C
CE
Output Capacitance
C
−
3.0
6.0
pF
dB
ob
(V = −10 V, I = 0, f = 1.0 MHz)
CB
C
Noise Figure
NF
(I = −0.2 mAdc, V = −5.0 V,
BC556
BC557
BC558
−
−
−
2.0
2.0
2.0
10
10
10
C
CE
R
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
S
Small−Signal Current Gain
(I = −2.0 mAdc, V = 5.0 V, f = 1.0 kHz)
h
fe
−
BC557
A Series Device
B Series Devices
C Series Devices
125
125
240
450
−
−
−
−
900
260
500
900
C
CE
1. I = −10 mAdc on the constant base current characteristics, which yields the point I = −11 mAdc, V = −1.0 V.
C
C
CE
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2
BC556B, BC557A, B, C, BC558B
BC557/BC558
2.0
1.5
−1.0
T = 25°C
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0
A
V
= −10 V
CE
T = 25°C
V
@ I /I = 10
C B
BE(sat)
A
1.0
0.7
0.5
V
BE(on)
@ V = −10 V
CE
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−0.1
−1.0
−10
−100
−50
−0.2
−0.5
−2.0
−5.0
−20
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
1.0
1.2
1.6
2.0
2.4
2.8
−2.0
−1.6
−1.2
−0.8
−0.4
0
−55°C to +125°C
T = 25°C
A
I
=
I
= −50 mA
I
C
= −200 mA
= −100 mA
C
−10 mA
C
I
C
I
= −20 mA
C
−0.02
−0.1
−1.0
−10 −20
−0.2
−1.0
−10
−100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
C
ib
T = 25°C
A
200
150
V
= −10 V
CE
T = 25°C
A
100
80
C
ob
3.0
2.0
60
40
30
1.0
−0.4
20
−0.5
−0.6 −1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
−1.0
−2.0 −3.0 −5.0
−10
−20 −30 −50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC556B, BC557A, B, C, BC558B
BC556
−1.0
T = 25°C
J
V
= −5.0 V
CE
T = 25°C
−0.8
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
−0.6
−0.4
−0.2
0
V
@ V = −5.0 V
CE
BE
0.2
V
@ I /I = 10
C B
CE(sat)
−0.1 −0.2
−1.0 −2.0
−10 −20
−100 −200
−50
−0.2 −0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−5.0
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
−2.0
−1.6
−1.2
−0.8
−0.4
0
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
−100 mA −200 mA
I
=
−20 mA
−50 mA
C
−10 mA
q
for V
BE
VB
−55°C to 125°C
T = 25°C
J
−0.02 −0.05 −0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−0.2 −0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
20
V
CE
= −5.0 V
500
T = 25°C
J
C
ib
200
100
50
10
8.0
6.0
4.0
C
ob
20
2.0
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100
−1.0
−10
−100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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4
BC556B, BC557A, B, C, BC558B
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z
q
(t) = (t) R
q
JC
JC
0.1
R
Z
= 83.3°C/W MAX
q
JC
0.1
0.07
0.05
P
(pk)
(t) = r(t) R
q
q
JA
JA
SINGLE PULSE
R
q
= 200°C/W MAX
JA
t
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
2
0.03
0.02
READ TIME AT t
1
DUTY CYCLE, D = t /t
1 2
T
J(pk)
− T = P
R
q
JC
(t)
C
(pk)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0ꢁk
2.0ꢁk
5.0ꢁk
10ꢁ
t, TIME (ms)
Figure 13. Thermal Response
−200
1 s
3 ms
−100
−50
The safe operating area curves indicate I −V
limits of the
C
CE
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
T = 25°C
J
T = 25°C
A
The data of Figure 14 is based upon T
= 150°C; T or T is
J(pk)
C A
BC558
BC557
BC556
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T ≤ 150°C. T may be
J(pk)
J(pk)
−10
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
−5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−2.0
−1.0
−5.0
−10
−30 −45 −65 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region − Safe Operating Area
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5
BC556B, BC557A, B, C, BC558B
ORDERING INFORMATION
†
Device
Package
Shipping
BC556BG
TO−92
(Pb−Free)
5000 Units / Bulk
2000 / Ammo Box
2000 / Ammo Box
5000 Units / Bulk
BC556BZL1G
BC557AZL1G
BC557BG
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
BC557BRL1
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC557BRL1G
TO−92
(Pb−Free)
BC557BZL1G
BC557CG
TO−92
(Pb−Free)
2000 / Ammo Box
5000 Units / Bulk
TO−92
(Pb−Free)
BC557CZL1G
BC558BRLG
BC558BRL1G
BC558BZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
BC556B, BC557A, B, C, BC558B
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
J
H
V
K
L
−−−
−−−
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
−−−
−−−
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
MILLIMETERS
K
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
−−−
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
−−−
V
C
−−−
SECTION X−X
1
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Order Literature: http://www.onsemi.com/orderlit
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For additional information, please contact your local
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BC556B/D
相关型号：
BC556C
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
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BC556C-AMMO
TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
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