1N6290AG [ROCHESTER]
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 41A-04, 2 PIN;
| 型号： | 1N6290AG |
| 厂家： | 
Rochester Electronics |
| 描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, PLASTIC, CASE 41A-04, 2 PIN 二极管 电视 |
| 文件： | 总8页 (文件大小：820K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6267A Series
1500 Watt Mosorbt Zener
Transient Voltage
Suppressors
Unidirectional
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
Features
• Working Peak Reverse Voltage Range − 5.8 V to 214 V
• Peak Power − 1500 Watts @ 1 ms
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5 mA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1 ns
• Pb−Free Packages are Available*
MARKING DIAGRAMS
A
1.5KE
xxxA
YYWWG
G
A
1N6
xxx
YYWWG
G
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16 in from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
A
= Assembly Location
1.5KExxxA = ON Device Code
1N6xxx
YY
= JEDEC Device Code
= Year
= Work Week
WW
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
1.5KExxxAG
Axial Lead
(Pb−Free)
500 Units/Box
1.5KExxxARL4G Axial Lead 1500/Tape & Reel
(Pb−Free)
1N6xxxAG
Axial Lead
(Pb−Free)
500 Units/Box
1N6xxxARL4G
Axial Lead 1500/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
October, 2009 − Rev. 12
1N6267A/D
1N6267A Series
MAXIMUM RATINGS
Rating
Symbol
Value
1500
5.0
Unit
W
Peak Power Dissipation (Note 1) @ T ≤ 25°C
P
PK
L
Steady State Power Dissipation
P
D
W
@ T ≤ 25°C, Lead Length = 3/8 in
L
Derated above T = 50°C
50
20
mW/°C
°C/W
A
L
Thermal Resistance, Junction−to−Lead
R
q
JL
Forward Surge Current (Note 2) @ T = 25°C
I
200
A
FSM
Operating and Storage Temperature Range
T , T
− 65 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.
A
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
otherwise noted, V = 3.5 V Max., I (Note 3) = 100 A)
F
F
Symbol
Parameter
I
I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
F
PP
V
C
PP
V
RWM
Working Peak Reverse Voltage
I
Maximum Reverse Leakage Current @ V
R
RWM
V
C
V
V
BR RWM
V
V
BR
Breakdown Voltage @ I
Test Current
T
I
V
F
R
T
I
I
T
QV
Maximum Temperature Coefficient of V
BR
BR
I
F
Forward Current
I
PP
V
F
Forward Voltage @ I
F
Uni−Directional TVS
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2
1N6267A Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 3.5 V Max. @ I (Note 3) = 100 A)
A
F
F
Breakdown Voltage
(Note 6) (Volts)
V @ I (Note 7)
C PP
V
RWM
JEDEC
Device
V
BR
@ I
V
C
I
PP
(Note 5)
I
R
@ V
QV
BR
T
RWM
†
†
(Volts)
(mA)
Min
Nom
Max
(mA)
(Volts)
(A)
(%/°C)
(Note 4)
Device
1.5KE6.8AG
1.5KE7.5AG
1.5KE8.2AG
1.5KE9.1AG
1N6267AG
5.8
6.4
7.02
7.78
1000
500
200
50
6.45
7.13
7.79
8.65
6.8
7.5
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
10.5
11.3
12.1
13.4
143
132
124
112
0.057
0.061
0.065
0.068
−
1N6269AG
−
1.5KE10AG
1.5KE11AG
1.5KE12AG
1.5KE13AG
1N6271AG
8.55
9.4
10.2
11.1
10
5
5
9.5
10
11
12
13
10.5
11.6
12.6
13.7
1
1
1
1
14.5
15.6
16.7
18.2
103
96
90
0.073
0.075
0.078
0.081
−
−
10.5
11.4
12.4
1N6274AG
5
82
1.5KE15AG
1.5KE16A, G
1.5KE18A, G
1.5KE20AG
1N6275AG
1N6276AG
1N6277AG
1N6278AG
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15
16
18
20
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
71
67
59.5
54
0.084
0.086
0.088
0.09
−
1N6279AG
1N6280AG
1N6281AG
1N6282AG
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
49
45
40
36
0.092
0.094
0.096
0.097
1.5KE24AG
1.5KE27AG
1.5KE30AG
1.5KE33AG
1.5KE36AG
1.5KE39AG
1.5KE43AG
1N6283AG
1N6284AG
1N6285AG
1N6286AG
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33
36
39
43
34.7
37.8
41
1
1
1
1
45.7
49.9
53.9
59.3
33
30
28
0.098
0.099
0.1
45.2
25.3
0.101
1.5KE47AG
1.5KE51AG
1.5KE56AG
1.5KE62AG
1N6287AG
1N6288A, G
1N6289AG
1N6290AG
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47
51
56
62
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
23.2
21.4
19.5
17.7
0.101
0.102
0.103
0.104
85
1.5KE68AG
1.5KE75AG
1.5KE82A, G
1.5KE91AG
1N6291AG
1N6292AG
−
58.1
64.1
70.1
77.8
5
5
5
5
64.6
71.3
77.9
86.5
68
75
82
91
71.4
78.8
86.1
95.5
1
1
1
1
92
16.3
14.6
13.3
12
0.104
0.105
0.105
0.106
103
113
125
1N6294AG
−
1N6295AG
85.5
5
95
100
105
1
137
11
0.106
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
greater than the dc or continuous peak operating voltage level.
), which should be equal to or
RWM
6. V measured at pulse test current I at an ambient temperature of 25°C
BR
T
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G” suffix indicates Pb−Free package or Pb−Free packages are available.
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3
1N6267A Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
100
80
60
10
40
20
0
1
0.1ꢀms
1ꢀms
10ꢀms
100ꢀms
1 ms
10 ms
0
25
50
75
100 125 150 175 200
T , AMBIENT TEMPERATURE (°C)
A
t , PULSE WIDTH
P
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
10,000
1000
10,000
MEASURED @
ZERO BIAS
MEASURED @
ZERO BIAS
1000
100
10
MEASURED @ V
RWM
MEASURED @ V
RWM
100
10
1
10
100
1000
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PULSE WIDTH (t ) IS DEFINED AS
P
THAT POINT WHERE THE PEAK
t
r
3/8″
CURRENT DECAYS TO 50% OF I
tr ≤ 10ꢀms
.
PP
PEAK VALUE - I
PP
100
50
0
3/8″
5
4
3
I
PP
HALF VALUE -
2
2
t
P
1
0
0
1
2
t, TIME (ms)
3
4
0
25
50
75
100 125 150 175
200
T , LEAD TEMPERATURE (°C)
L
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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4
1N6267A Series
1
1000
500
V
ꢀ=ꢀ6.8 to 13ꢀV
20ꢀV
BR(NOM)
T ꢀ=ꢀ25°C
P
0.7
L
t ꢀ=ꢀ10ꢀms
43ꢀV
75ꢀV
0.5
24ꢀV
200
100
50
0.3
0.2
PULSE WIDTH
10 ms
0.1
0.07
0.05
20
180ꢀV
120ꢀV
10
5
1 ms
0.03
0.02
100 ms
2
1
10 ms
0.01
0.1
0.2
0.5
1
2
5
10
20
50 100
0.3
0.5 0.7
1
2
3
5
7
10
20 30
DV , INSTANTANEOUS INCREASE IN V ABOVE V (VOLTS)
BR(NOM)
D, DUTY CYCLE (%)
BR
BR
Figure 6. Dynamic Impedance
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
circuit layout, minimum lead lengths and placing the
RESPONSE TIME
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
Some input impedance represented by Z is essential to
in
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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5
1N6267A Series
TYPICAL PROTECTION CIRCUIT
Z
in
LOAD
V
in
V
L
V (TRANSIENT)
in
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
V
V (TRANSIENT)
in
V
L
V
L
V
in
t
d
t = TIME DELAY DUE TO CAPACITIVE EFFECT
D
t
t
Figure 8.
Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-
Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
*Applies to 1.5KE6.8A thru 1.5KE250A
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6
1N6267A Series
PACKAGE DIMENSIONS
MOSORB
CASE 41A−04
ISSUE D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A-01 THRU 041A-03 OBSOLETE, NEW
STANDARD 041A-04.
K
INCHES
DIM MIN MAX
MILLIMETERS
P
MIN
8.50
4.80
0.96
25.40
---
MAX
9.50
5.30
1.06
---
A
B
D
K
P
0.335
0.189
0.038
1.000
---
0.374
0.209
0.042
---
P
A
0.050
1.27
K
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Europe, Middle East and Africa Technical Support:
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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
1N6267A/D
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