R1122N151A-TR-FE [RICOH]

LOW NOISE 150mA LDO REGULATOR;
R1122N151A-TR-FE
型号: R1122N151A-TR-FE
厂家: RICOH ELECTRONICS DEVICES DIVISION    RICOH ELECTRONICS DEVICES DIVISION
描述:

LOW NOISE 150mA LDO REGULATOR

文件: 总21页 (文件大小:268K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
R1122N SERIES  
LOW NOISE 150mA LDO REGULATOR  
NO.EA-060-111027  
OUTLINE  
The R1122N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low  
supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a  
voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs  
perform with low dropout voltage and a chip enable function.  
The line transient response and load transient response of the R1122N Series are excellent, thus these ICs  
are very suitable for the power supply for hand-held communication equipment.  
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5  
(Mini-mold) package , high density mounting of the ICs on boards is possible.  
FEATURES  
Supply Current................................................................Typ. 100μA  
Standby Mode Current ..................................................Typ. 0.1μA  
Dropout Voltage ..............................................................Typ. 0.19V (IOUT=100mA 3.0V Output type)  
Ripple Rejection..............................................................Typ. 80dB(f=1kHz)  
Temperature-Drift Coefficient of Output Voltage.............Typ. ±100ppm/°C  
Line Regulation...............................................................Typ. 0.05%/V  
Output Voltage Accuracy.................................................±2.0%  
Output Voltage Range.....................................................1.5V to 5.0V (0.1V steps)  
(For other voltages, please refer to MARK INFORMATIONS.)  
Package ........................................................................SOT-23-5 (Mini-mold)  
Built-in chip enable circuit ( 2 types; A: active “Low”, B: active “High”)  
Built-in fold-back protection circuit..................................Short Current Typ.30mA  
Pin-out.............................................................................Similar to the TK112,TK111  
Ceramic Capacitors Recommended to be used with this IC  
APPLICATIONS  
Power source for cellular phones such as GSM, CDMA, PCS and so forth.  
Power source for domestic appliances such as cameras, VCRs and camcorders.  
Power source for battery-powered equipment.  
1
R1122N  
BLOCK DIAGRAM  
R1122Nxx1A  
R1122Nxx1B  
3
1
3
1
V
DD  
VOUT  
V
DD  
VOUT  
_
+
_
+
Vref  
Vref  
GND  
GND  
CE  
Current Limit  
Current Limit  
CE  
2
2
4
4
SELECTION GUIDE  
The output voltage, the active type for the ICs can be selected at the user's request.  
Product Name  
Package  
Quantity per Reel  
Pb Free  
Halogen Free  
SOT-23-5  
3,000 pcs  
Yes  
Yes  
R1122Nxx1-TR-FE  
xx: The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps.  
(For other voltages, please refer to MARK INFORMATIONS.)  
: Designation of Active Type.  
(A) "L" active  
(B) "H" active  
2
R1122N  
PIN CONFIGURATION  
SOT-23-5  
5
4
(mark side)  
1
2
3
PIN DESCRIPTION  
Pin No  
Symbol  
VOUT  
Description  
Output pin  
1
2
3
4
5
GND  
VDD  
Ground Pin  
Input Pin  
Chip Enable Pin  
No Connection  
or CE  
CE  
NC  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Item  
Rating  
7.0  
Unit  
V
VIN  
Input Voltage  
Input Voltage  
VCE  
(
-0.3 ~ VIN+0.3  
-0.3 ~ VIN+0.3  
200  
V
CE  
or CE Pin)  
VOUT  
IOUT  
Output Voltage  
V
Output Current  
mA  
mW  
°C  
°C  
Power Dissipation (SOT-23-5)∗  
Operating Temperature Range  
Storage Temperature Range  
PD  
420  
Topt  
Tstg  
-40 ~ 85  
-55 ~ 125  
) For Power Dissipation, please refer to PACKAGE INFORMATION.  
ABSOLUTE MAXIMUM RATINGS  
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the  
permanent damages and may degrade the life time and safety for both device and system using the device  
in the field.  
The functional operation at or over these absolute maximum ratings is not assured.  
3
R1122N  
ELECTRICAL CHARACTERISTICS  
R1122Nxx1A  
Topt=25°C  
Symbol  
Item  
Conditions  
Min.  
Typ.  
Max.  
Unit  
VIN = Set VOUT + 1V  
VOUT  
×0.98  
VOUT  
×1.02  
VOUT  
Output Voltage  
V
<
1mA  
IOUT  
30mA  
VIN = Set VOUT + 1V  
When VOUT = Set VOUT -0.1V  
IOUT  
Output Current  
150  
mA  
mV  
VIN = Set VOUT + 1V  
ΔVOUT/ΔIOUT  
Load Regulation  
12  
40  
<
1mA  
IOUT  
80mA  
VDIF  
ISS  
Dropout Voltage  
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE  
Supply Current  
VIN = Set VOUT + 1V  
100  
0.1  
170  
1.0  
μA  
μA  
Istandby  
Supply Current (Standby)  
VIN = VCE = Set VOUT + 1V  
Set VOUT+0.5V  
IOUT = 30mA  
VIN  
6.0V  
ΔVOUT/ΔVIN  
Line Regulation  
0.05  
80  
0.20  
%/V  
f = 1kHz, Ripple 0.5Vp-p  
VIN = Set VOUT + 1V  
RR  
VIN  
Ripple Rejection  
Input Voltage  
dB  
V
2.0  
6.0  
ΔVOUT/  
ΔTopt  
Output Voltage  
Temperature Coefficient  
IOUT = 30mA  
±100  
ppm/°C  
<
40°C  
Topt  
85°C  
=
=
ISC  
RPU  
VCEH  
VCEL  
en  
Short Current Limit  
VOUT = 0V  
30  
mA  
MΩ  
V
2.5  
1.5  
5.0  
10.0  
VIN  
Pull-up Resistance  
CE  
CE Input Voltage “H”  
0.00  
0.25  
V
CE Input Voltage “L”  
Output Noise  
BW=10Hz to 100kHz  
30  
μVrms  
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)  
All of electronic equipment should be designed that the mounted semiconductor devices operate within the  
recommended operating conditions. The semiconductor devices cannot operate normally over the  
recommended operating conditions, even if when they are used over such conditions by momentary  
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue  
to operate over the recommended operating conditions.  
4
R1122N  
R1122Nxx1B  
Topt=25°C  
Symbol  
Item  
Conditions  
Min.  
Typ.  
Max.  
Unit  
VOUT  
×0.98  
VOUT  
×1.02  
VIN = Set VOUT + 1V  
VOUT  
Output Voltage  
V
<
1mA  
IOUT  
30mA  
=
=
VIN = Set VOUT + 1V  
When VOUT = Set VOUT -0.1V  
IOUT  
Output Current  
150  
mA  
mV  
VIN = Set VOUT + 1V  
Load Regulation  
12  
40  
ΔVOUT/ΔIOUT  
<
1mA  
IOUT  
80mA  
=
=
VDIF  
ISS  
Dropout Voltage  
Supply Current  
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE  
100  
0.1  
170  
1.0  
VIN = Set VOUT + 1V  
μA  
μA  
VIN = Set VOUT + 1V  
VCE =GND  
Istandby  
Supply Current (Standby)  
Line Regulation  
Set VOUT + 0.5V  
IOUT = 30mA  
VIN  
6.0V  
0.05  
80  
0.20  
%/V  
ΔVOUT/ΔVIN  
f = 1kHz, Ripple 0.5Vp-p  
VIN = Set VOUT + 1V  
RR  
VIN  
Ripple Rejection  
Input Voltage  
dB  
V
2.0  
6.0  
ΔVOUT/  
ΔTopt  
Output Voltage  
Temperature Coefficient  
IOUT = 30mA  
±100  
ppm/°C  
40°C  
Topt  
85°C  
=
ISC  
RPD  
VCEH  
VCEL  
en  
Short Current Limit  
CE Pull-down Resistance  
CE Input Voltage “H”  
CE Input Voltage “L”  
Output Noise  
30  
mA  
MΩ  
V
VOUT = 0V  
2.5  
1.5  
5.0  
10.0  
VIN  
0.00  
0.25  
V
30  
BW=10Hz to 100kHz  
μVrms  
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)  
All of electronic equipment should be designed that the mounted semiconductor devices operate within the  
recommended operating conditions. The semiconductor devices cannot operate normally over the  
recommended operating conditions, even if when they are used over such conditions by momentary  
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue  
to operate over the recommended operating conditions.  
5
R1122N  
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE  
Topt = 25°C  
Dropout Voltage  
Output Voltage  
VOUT (V)  
VDIF (V)  
Typ.  
0.32  
Condition  
Max.  
0.55  
0.47  
0.35  
0.29  
0.26  
<
=
<
<
<
<
<
1.5  
1.7  
1.9  
2.4  
2.8  
VOUT  
VOUT  
VOUT  
VOUT  
VOUT  
1.6  
1.8  
2.3  
2.7  
5.0  
<
=
<
=
0.28  
IOUT = 100mA  
0.25  
<
=
<
=
0.20  
0.19  
OPERATION  
R1122Nxx1A  
R1122Nxx1B  
3
1
3
1
V
DD  
VOUT  
V
DD  
VOUT  
_
+
_
+
R1  
R2  
R1  
R2  
Vref  
Vref  
GND  
GND  
CE  
Current Limit  
CE  
Current Limit  
2
2
4
4
In these ICs, fluctuation of the output voltage, VOUT is detected by feed-back registers R1, R2, and the result is  
compared with a reference voltage by the error amplifier, so that a constant voltage is output.  
A current limit circuit for protection at short mode, and a chip enable circuit, are included.  
6
R1122N  
TEST CIRCUITS  
CE  
CE  
4
4
VOUT  
V
OUT  
VDD  
V
DD  
IN  
IN  
OUT  
IOUT  
OUT  
R1122Nxx1B  
Series  
R1122Nxx1B  
Series  
3
3
1
1
I
SS  
2
2
GND  
GND  
2.2μF  
2.2μF  
Fig.1 Standard test Circuit  
Fig.2 Supply Current Test Circuit  
CE  
4
CE  
4
V
OUT  
V
OUT  
V
DD  
V
DD  
IN  
IN  
OUT  
OUT  
R1122Nxx1B  
Series  
R1122Nxx1B  
Series  
3
3
1
1
I
OUT  
I
OUT  
P.G  
2
2
GND  
GND  
I1  
I2  
2.2μF  
Fig.3 Ripple Rejection, Line Transient  
Response Test Circuit  
Fig.4 Load Transient Response Test Circuit  
7
R1122N  
TECHNICAL NOTES  
When using these ICs, consider the following points:  
Phase Compensation  
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For  
this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series  
Resistance).  
(Note: When the additional ceramic capacitors are connected to the output pin with the output capacitor for  
phase compensation, the operation might be unstable. Because of this, test these ICs with the same external  
components as the ones to be used on the PCB.)  
Recommended Capacitors ; GRM40X5R225K6.3 (Murata)  
GRM40-034X5R335K6.3 (Murata)  
GRM40-034X5R475K6.3 (Murata)  
PCB Layout  
Make VDD and GND lines sufficient. If their impedance is high, picking up the noise or unstable operation may  
result. Connect a capacitor with a capacitance of 2.2μF or more between VDD and GND pin as close as possible.  
Set external components, especially output capacitor as close as possible to the ICs and make wiring as short  
as possible.  
TYPICAL APPLICATION  
CE  
CE  
R1122Nxx1A  
Series  
R1122Nxx1B  
Series  
V
OUT  
V
OUT  
IN  
OUT  
IN  
OUT  
VDD  
VDD  
+
+
+
+
GND  
GND  
Cap.  
Cap.  
Cap.  
Cap.  
(External Components)  
Output Capacitor ; Ceramic 2.2μF (Set output voltage in the range from 2.5 to 5.0V)  
Ceramic 4.7μF (Set output voltage in the range from 1.5 to 2.5V)  
Input Capacitor ; Ceramic 2.2μF  
8
R1122N  
TYPICAL CHARACTERISTICS  
1) Output Voltage vs. Output Current  
R1122N151B  
R1122N201B  
2.5  
2
1.8  
1.6  
1.4  
VIN=2.0V  
VIN=2.5V  
VIN=3.5V  
1.2  
1
VIN=2.3V  
VIN=2.5V  
VIN=3.0V  
VIN=4.0V  
1.5  
1
0.8  
0.6  
0.4  
0.5  
0
0.2  
0
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
Output Current IOUT(mA)  
Output Current IOUT(mA)  
R1122N301B  
R1122N401B  
3.5  
3
5
4
3
2
1
0
2.5  
2
V
IN=3.3V  
IN=3.5V  
IN=4.0V  
IN=5.0V  
V
IN=4.3V  
IN=4.5V  
IN=5.0V  
IN=6.0V  
V
V
V
V
V
V
1.5  
1
0.5  
0
0
100  
200  
300  
400  
500  
0
100  
200  
300  
400  
500  
Output Current IOUT(mA)  
Output Current IOUT(mA)  
R1122N501B  
6
5
4
3
2
1
0
V
IN=5.3V  
IN=5.5V  
IN=6.0V  
IN=7.0V  
V
V
V
0
100  
200  
300  
400  
500  
Output Current IOUT(mA)  
9
R1122N  
2) Output Voltage vs. Input Voltage  
R1122N151B  
R1122N201B  
1.600  
2.100  
2.000  
1.900  
1.800  
1.700  
1.600  
1.500  
1.500  
1.400  
1.300  
1.200  
1.100  
1.000  
IOUT=1mA  
IOUT=30mA  
IOUT=50mA  
IOUT=1mA  
IOUT=30mA  
IOUT=50mA  
1
2
2
2
3
4
5
6
7
7
7
1
2
3
4
5
6
7
Input Voltage VIN(V)  
Input Voltage VIN(V)  
R1122N301B  
R1122N401B  
3.100  
3.000  
2.900  
2.800  
2.700  
2.600  
2.500  
4.500  
4.000  
3.500  
3.000  
2.500  
I
I
I
OUT=1mA  
OUT=30mA  
OUT=50mA  
I
OUT=1mA  
OUT=30mA  
OUT=50mA  
I
I
3
4
5
6
2
3
4
5
6
7
Input Voltage VIN(V)  
Input Voltage VIN(V)  
R1122N501B  
5.500  
5.000  
4.500  
4.000  
3.500  
3.000  
2.500  
I
OUT=1mA  
OUT=30mA  
OUT=50mA  
I
I
3
4
5
6
Input Voltage VIN(V)  
10  
R1122N  
3) Dropout Voltage vs. Output Current  
R1122N151B  
R1122N201B  
0.600  
0.600  
0.500  
0.400  
0.300  
0.200  
0.100  
0.000  
Topt=-40°C  
Topt=25°C  
Topt=85°C  
Topt=-40°C  
Topt=25°C  
Topt=85°C  
0.500  
0.400  
0.300  
0.200  
0.100  
0.000  
0
0
0
50  
100  
150  
150  
150  
0
50  
100  
150  
Output Current IOUT(mA)  
Output Current IOUT(mA)  
R1122N301B  
R1122N401B  
0.600  
0.500  
0.400  
0.300  
0.200  
0.100  
0.000  
0.600  
0.500  
0.400  
0.300  
0.200  
0.100  
0.000  
Topt=-40°C  
Topt=25°C  
Topt=85°C  
Topt=-40°C  
Topt=25°C  
Topt=85°C  
50  
100  
0
50  
100  
150  
Output Current IOUT(mA)  
Output Current IOUT(mA)  
R1122N501B  
0.600  
0.500  
0.400  
0.300  
0.200  
0.100  
0.000  
Topt=-40°C  
Topt=25°C  
Topt=85°C  
50  
100  
Output Current IOUT(mA)  
11  
R1122N  
4) Output Voltage vs. Temperature  
R1122N151A/B  
R1122N201A/B  
V
IN=2.5V CIN=1μF  
VIN=3.0V CIN=1μF  
COUT=2.2μF IOUT=30mA  
C
OUT=2.2μF IOUT=30mA  
1.53  
1.52  
2.10  
2.08  
2.06  
2.04  
2.02  
2.00  
1.98  
1.96  
1.94  
1.92  
1.90  
1.51  
1.50  
1.49  
1.48  
1.47  
-50  
-50  
-50  
-25  
-25  
-25  
0
25  
100  
50  
75  
-50  
-25  
0
25  
100  
50  
75  
Temperature Topt (°C)  
Temperature Topt (°C)  
R1122N301A/B  
R1122N401A/B  
VIN=5.0V CIN=1μF  
V
IN=4.0V CIN=1μF  
COUT=2.2μF IOUT=30mA  
C
OUT=2.2μF IOUT=30mA  
4.08  
4.06  
4.04  
4.02  
3.06  
3.04  
3.02  
3.00  
2.98  
4.00  
3.98  
3.96  
3.94  
2.96  
2.94  
3.92  
-50  
-25  
0
25  
100  
0
25  
100  
50  
75  
50  
75  
Temperature Topt (°C)  
Temperature Topt (°C)  
R1122N501A/B  
V
IN=6.0V CIN=1μF  
C
OUT=2.2μF IOUT=30mA  
5.10  
5.08  
5.06  
5.04  
5.02  
5.00  
4.98  
4.96  
4.94  
4.92  
4.90  
0
25  
100  
50  
75  
Temperature Topt (°C)  
12  
R1122N  
5) Supply Current vs. Input Voltage  
R1122N151B  
R1122N201B  
120  
120  
100  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
1
1
1
2
2
2
3
4
5
6
6
6
7
7
7
1
2
3
4
5
6
7
Input Voltage VIN (V)  
Input Voltage VIN (V)  
R1122N301B  
R1122N401B  
120  
100  
120  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
3
4
5
1
2
3
4
5
6
7
Input Voltage VIN (V)  
Input Voltage VIN (V)  
R1122N501B  
120  
100  
80  
60  
40  
20  
0
3
4
5
Input Voltage VIN (V)  
13  
R1122N  
6) Supply Current vs. Temperature  
R1122N151A/B  
R1122N201A/B  
V
C
IN=2.5V CIN=1μF  
V
C
IN=3.0V CIN=1μF  
OUT=2.2μF  
OUT=2.2μF  
200  
150  
100  
50  
200  
150  
100  
50  
0
0
-50  
-25  
-25  
-25  
0
25  
50  
75  
100  
-50  
-25  
0
25  
50  
75  
100  
Temperature Topt (°C)  
Temperature Topt (°C)  
R1122N301A/B  
R1122N401A/B  
V
C
IN=4.0V CIN=1μF  
OUT=2.2μF  
V
IN=5.0V CIN=1μF  
COUT=2.2μF  
200  
150  
100  
50  
200  
150  
100  
50  
0
0
-50  
0
25  
50  
75  
100  
-50  
-25  
0
25  
50  
75  
100  
Temperature Topt (°C)  
Temperature Topt (°C)  
R1122N501A/B  
V
C
IN=6.0V CIN=1μF  
OUT=2.2μF  
200  
150  
100  
50  
0
-50  
0
25  
50  
75  
100  
Temperature Topt (°C)  
14  
R1122N  
7) Ripple Rejection vs. Frequency  
R1122N151A/B  
R1122N201A/B  
VIN=2.5V+0.5Vp-p  
VIN=3.0V+0.5Vp-p  
C
OUT=2.2μF IOUT=30mA  
COUT=2.2μF IOUT=30mA  
90.00  
80.00  
90.00  
80.00  
70.00  
60.00  
50.00  
40.00  
30.00  
70.00  
60.00  
50.00  
40.00  
30.00  
20.00  
10.00  
0.00  
20.00  
10.00  
0.00  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
Frequency Freq (kHz)  
Frequency Freq (kHz)  
R1122N301A/B  
R1122N401A/B  
V
IN=4.0V+0.5Vp-p  
OUT=2.2μF IOUT=30mA  
V
IN=5.0V+0.5Vp-p  
OUT=2.2μF IOUT=30mA  
C
C
90.00  
80.00  
90.00  
80.00  
70.00  
60.00  
50.00  
40.00  
30.00  
70.00  
60.00  
50.00  
40.00  
30.00  
20.00  
10.00  
0.00  
20.00  
10.00  
0.00  
1
10  
100  
0.1  
1
10  
100  
Frequency Freq (kHz)  
Frequency Freq (kHz)  
R1122N501A/B  
V
IN=6.0V+0.5Vp-p  
OUT=2.2μF IOUT=30mA  
C
90.00  
80.00  
70.00  
60.00  
50.00  
40.00  
30.00  
20.00  
10.00  
0.00  
1
10  
100  
Frequency Freq (kHz)  
15  
R1122N  
8) Ripple Rejection vs. Input Voltage (DC bias)  
R1122N301B  
R1122N301B  
C
OUT=Ceramic 2.2μF  
C
OUT=Ceramic 2.2μF  
IOUT=1mA  
IOUT=10mA  
90.00  
80.00  
90.00  
80.00  
70.00  
60.00  
50.00  
40.00  
30.00  
70.00  
60.00  
50.00  
40.00  
30.00  
f=400Hz  
f=1kHz  
f=10kHz  
f=400Hz  
f=1kHz  
f=10kHz  
20.00  
10.00  
0.00  
20.00  
10.00  
0.00  
3.10  
3.20  
3.30  
3.40  
3.50  
3.10  
3.20  
3.30  
3.40  
3.50  
Input Voltage VIN (V)  
Input Voltage VIN (V)  
R1122N301B  
C
OUT=Ceramic 2.2μF  
IOUT=50mA  
90.00  
80.00  
70.00  
60.00  
50.00  
40.00  
30.00  
f=400Hz  
f=1kHz  
f=10kHz  
20.00  
10.00  
0.00  
3.10  
3.20  
3.30  
3.40  
3.50  
Input Voltage VIN (V)  
9) Input Transient Response  
R1122N501B  
Tek Run : 2.50MS/s Average  
Topt=25°C  
VIN  
1  
2→  
VIN=2.5V3.5V  
IOUT=30mA  
CIN=none  
V
OUT  
COUT=2.2μF  
tr/tf=5μs  
ChC1h1 1.00V  
Ch2 20.0mV M20.0μs  
16  
R1122N  
R1122N201B  
Tek Run : 2.50MS/s Average  
Topt=25°C  
V
IN  
1  
2→  
VIN=3.0V4.0V  
IOUT=30mA  
CIN=none  
V
OUT  
COUT=2.2μF  
tr/tf=5μs  
Ch1 1.00V  
Ch2 20.0mV M20.0μs  
R1122N301B  
Topt=25°C  
Tek Run : 2.50MS/s Average  
V
IN  
1→  
2→  
VIN=4.0V5.0V  
IOUT=30mA  
CIN=none  
V
OUT  
COUT=2.2μF  
tr/tf=5μs  
Ch1 1.00V  
Ch2 20.0mV M20.0μs  
R1122N401B  
Tek Run : 2.50MS/s Average  
Topt=25°C  
V
IN  
1→  
2→  
VIN=5.0V6.0V  
IOUT=30mA  
CIN=none  
V
OUT  
COUT=2.2μF  
tr/tf=5μs  
Ch1 1.00V  
Ch2 20.0mV M20.0μs  
17  
R1122N  
R1122N501B  
Tek Run : 2.50MS/s Average  
Topt=25°C  
V
IN  
1→  
2→  
VIN=6.0V7.0V  
IOUT=30mA  
CIN=none  
V
OUT  
COUT=2.2μF  
tr/tf=5μs  
Ch1 1.00V  
Ch2 20.0mV M20.0μs  
10) Load Transient Response  
R1122N151B  
Topt=25°C  
Tek Run : 2.50MS/s Average  
I
OUT  
1→  
IOUT=50mA100mA  
VIN=2.5V  
CIN=2.2μF  
V
OUT  
2→  
COUT=2.2μF  
tr/tf=5μs  
Ch1 500mV Ch2 50.0mV M20.0μs  
R1122N201B  
Topt=25°C  
Tek Run : 2.50MS/s Average  
I
OUT  
1→  
IOUT=50mA100mA  
VIN=3.0V  
CIN=2.2μF  
V
OUT  
2→  
COUT=2.2μF  
tr/tf=5μs  
Ch1 500mV Ch2 50.0mV M20.0μs  
18  
R1122N  
R1122N301B  
Tek Run : 2.50MS/s Average  
Topt=25°C  
I
OUT  
1→  
IOUT=50mA100mA  
VIN=4.0V  
CIN=2.2μF  
V
OUT  
2→  
COUT=2.2μF  
tr/tf=5μs  
Ch1 500mV Ch2 50.0mV M20.0μs  
R1122N401B  
Topt=25°C  
Tek Run : 2.50MS/s Average  
I
OUT  
1→  
IOUT=50mA100mA  
VIN=5.0V  
V
OUT  
2→  
CIN=2.2μF  
COUT=2.2μF  
tr/tf=5μs  
Ch1 500mV Ch2 50.0mV M20.0μs  
R1122N501B  
Tek Run : 2.50MS/s Average  
Topt=25°C  
I
OUT  
1→  
IOUT=50mA100mA  
VIN=6.0V  
CIN=2.2μF  
COUT=2.2μF  
tr/tf=5μs  
V
OUT  
2→  
Ch1 500mV Ch2 50.0mV M20.0μs  
19  
R1122N  
TECHNICAL NOTES  
Spectrum  
Analyzer  
CE  
4
3
V
OUT1  
1
Ceramic  
Cap.  
R1122Nxx1B  
S.A  
ESR  
V
DD  
GND  
Ceramic  
2
Cap.  
V
IN  
I
OUT  
Measuring Circuit for white noise; R1122N301B  
The relationship between IOUT (output current) and ESR of the output capacitor is shown in the graphs below.  
The conditions when the white noise level is under 40μV (Avg.) are indicated by the hatched area in the graph.  
(Note: When additional ceramic capacitors are connected to the output pin with the output capacitor for phase  
compensation, operation might be unstable. Because of this, test these ICs with the same external components  
as the ones to be used on the PCB.)  
<Measuring Conditions>  
(1)VIN=VOUT+1V  
(2)Frequency band: 10Hz to 1MHz  
(3)Temperature: 25°C  
20  
1.The products and the product specifications described in this document are subject to change or  
discontinuation of production without notice for reasons such as improvement. Therefore, before  
deciding to use the products, please refer to Ricoh sales representatives for the latest information  
thereon.  
2.The materials in this document may not be copied or otherwise reproduced in whole or in part without  
prior written consent of Ricoh.  
3.Please be sure to take any necessary formalities under relevant laws or regulations before exporting or  
otherwise taking out of your country the products or the technical information described herein.  
4.The technical information described in this document shows typical characteristics of and example  
application circuits for the products. The release of such information is not to be construed as a  
warranty of or a grant of license under Ricoh's or any third party's intellectual property rights or any  
other rights.  
5.The products listed in this document are intended and designed for use as general electronic  
components in standard applications (office equipment, telecommunication equipment, measuring  
instruments, consumer electronic products, amusement equipment etc.). Those customers intending to  
use a product in an application requiring extreme quality and reliability, for example, in a highly specific  
application where the failure or misoperation of the product could result in human injury or death  
(aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and  
transportation equipment, combustion equipment, safety devices, life support system etc.) should first  
contact us.  
6.We are making our continuous effort to improve the quality and reliability of our products, but  
semiconductor products are likely to fail with certain probability. In order to prevent any injury to  
persons or damages to property resulting from such failure, customers should be careful enough to  
incorporate safety measures in their design, such as redundancy feature, fire containment feature and  
fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from  
misuse or inappropriate use of the products.  
7.Anti-radiation design is not implemented in the products described in this document.  
8.Please contact Ricoh sales representatives should you have any questions or comments concerning  
the products or the technical information.  
Ricoh is committed to reducing the environmental loading materials in electrical devices  
with a view to contributing to the protection of human health and the environment.  
Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since  
Halogen Free  
April 1, 2012.  
http://www.e-devices.ricoh.co.jp/en/  
Sales & Support Offices  
RICOH ELECTRONIC DEVICES CO., LTD.  
Higashi-Shinagawa Office (International Sales)  
3-32-3, Higashi-Shinagawa, Shinagawa-ku, Tokyo 140-8655, Japan  
Phone: +81-3-5479-2857 Fax: +81-3-5479-0502  
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Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623  

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