R1122N151A-TR-FE [RICOH]
LOW NOISE 150mA LDO REGULATOR;型号: | R1122N151A-TR-FE |
厂家: | RICOH ELECTRONICS DEVICES DIVISION |
描述: | LOW NOISE 150mA LDO REGULATOR |
文件: | 总21页 (文件大小:268K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
R1122N SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-060-111027
OUTLINE
The R1122N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low
supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a
voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs
perform with low dropout voltage and a chip enable function.
The line transient response and load transient response of the R1122N Series are excellent, thus these ICs
are very suitable for the power supply for hand-held communication equipment.
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5
(Mini-mold) package , high density mounting of the ICs on boards is possible.
FEATURES
• Supply Current................................................................Typ. 100μA
• Standby Mode Current ..................................................Typ. 0.1μA
• Dropout Voltage ..............................................................Typ. 0.19V (IOUT=100mA 3.0V Output type)
• Ripple Rejection..............................................................Typ. 80dB(f=1kHz)
• Temperature-Drift Coefficient of Output Voltage.............Typ. ±100ppm/°C
• Line Regulation...............................................................Typ. 0.05%/V
• Output Voltage Accuracy.................................................±2.0%
• Output Voltage Range.....................................................1.5V to 5.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Package ........................................................................SOT-23-5 (Mini-mold)
• Built-in chip enable circuit ( 2 types; A: active “Low”, B: active “High”)
• Built-in fold-back protection circuit..................................Short Current Typ.30mA
• Pin-out.............................................................................Similar to the TK112,TK111
• Ceramic Capacitors Recommended to be used with this IC
APPLICATIONS
• Power source for cellular phones such as GSM, CDMA, PCS and so forth.
• Power source for domestic appliances such as cameras, VCRs and camcorders.
• Power source for battery-powered equipment.
1
R1122N
BLOCK DIAGRAM
R1122Nxx1A
R1122Nxx1B
3
1
3
1
V
DD
VOUT
V
DD
VOUT
_
+
_
+
Vref
Vref
GND
GND
CE
Current Limit
Current Limit
CE
2
2
4
4
SELECTION GUIDE
The output voltage, the active type for the ICs can be selected at the user's request.
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
SOT-23-5
3,000 pcs
Yes
Yes
R1122Nxx1∗-TR-FE
xx: The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps.
(For other voltages, please refer to MARK INFORMATIONS.)
∗ : Designation of Active Type.
(A) "L" active
(B) "H" active
2
R1122N
PIN CONFIGURATION
SOT-23-5
5
4
(mark side)
1
2
3
PIN DESCRIPTION
Pin No
Symbol
VOUT
Description
Output pin
1
2
3
4
5
GND
VDD
Ground Pin
Input Pin
Chip Enable Pin
No Connection
or CE
CE
NC
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
7.0
Unit
V
VIN
Input Voltage
Input Voltage
VCE
(
-0.3 ~ VIN+0.3
-0.3 ~ VIN+0.3
200
V
CE
or CE Pin)
VOUT
IOUT
Output Voltage
V
Output Current
mA
mW
°C
°C
Power Dissipation (SOT-23-5)∗
Operating Temperature Range
Storage Temperature Range
PD
420
Topt
Tstg
-40 ~ 85
-55 ~ 125
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
3
R1122N
ELECTRICAL CHARACTERISTICS
• R1122Nxx1A
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VIN = Set VOUT + 1V
VOUT
×0.98
VOUT
×1.02
VOUT
Output Voltage
V
<
1mA
IOUT
30mA
VIN = Set VOUT + 1V
When VOUT = Set VOUT -0.1V
IOUT
Output Current
150
mA
mV
VIN = Set VOUT + 1V
ΔVOUT/ΔIOUT
Load Regulation
12
40
<
1mA
IOUT
80mA
VDIF
ISS
Dropout Voltage
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Supply Current
VIN = Set VOUT + 1V
100
0.1
170
1.0
μA
μA
Istandby
Supply Current (Standby)
VIN = VCE = Set VOUT + 1V
Set VOUT+0.5V
IOUT = 30mA
VIN
6.0V
ΔVOUT/ΔVIN
Line Regulation
0.05
80
0.20
%/V
f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT + 1V
RR
VIN
Ripple Rejection
Input Voltage
dB
V
2.0
6.0
ΔVOUT/
ΔTopt
Output Voltage
Temperature Coefficient
IOUT = 30mA
±100
ppm/°C
<
−40°C
Topt
85°C
=
=
ISC
RPU
VCEH
VCEL
en
Short Current Limit
VOUT = 0V
30
mA
MΩ
V
2.5
1.5
5.0
10.0
VIN
Pull-up Resistance
CE
CE Input Voltage “H”
0.00
0.25
V
CE Input Voltage “L”
Output Noise
BW=10Hz to 100kHz
30
μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
4
R1122N
• R1122Nxx1B
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VOUT
×0.98
VOUT
×1.02
VIN = Set VOUT + 1V
VOUT
Output Voltage
V
<
1mA
IOUT
30mA
=
=
VIN = Set VOUT + 1V
When VOUT = Set VOUT -0.1V
IOUT
Output Current
150
mA
mV
VIN = Set VOUT + 1V
Load Regulation
12
40
ΔVOUT/ΔIOUT
<
1mA
IOUT
80mA
=
=
VDIF
ISS
Dropout Voltage
Supply Current
Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
100
0.1
170
1.0
VIN = Set VOUT + 1V
μA
μA
VIN = Set VOUT + 1V
VCE =GND
Istandby
Supply Current (Standby)
Line Regulation
Set VOUT + 0.5V
IOUT = 30mA
VIN
6.0V
0.05
80
0.20
%/V
ΔVOUT/ΔVIN
f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT + 1V
RR
VIN
Ripple Rejection
Input Voltage
dB
V
2.0
6.0
ΔVOUT/
ΔTopt
Output Voltage
Temperature Coefficient
IOUT = 30mA
±100
ppm/°C
−40°C
Topt
85°C
=
ISC
RPD
VCEH
VCEL
en
Short Current Limit
CE Pull-down Resistance
CE Input Voltage “H”
CE Input Voltage “L”
Output Noise
30
mA
MΩ
V
VOUT = 0V
2.5
1.5
5.0
10.0
VIN
0.00
0.25
V
30
BW=10Hz to 100kHz
μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
5
R1122N
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage
Output Voltage
VOUT (V)
VDIF (V)
Typ.
0.32
Condition
Max.
0.55
0.47
0.35
0.29
0.26
<
=
<
<
<
<
<
1.5
1.7
1.9
2.4
2.8
VOUT
VOUT
VOUT
VOUT
VOUT
1.6
1.8
2.3
2.7
5.0
<
=
<
=
0.28
IOUT = 100mA
0.25
<
=
<
=
0.20
0.19
OPERATION
R1122Nxx1A
R1122Nxx1B
3
1
3
1
V
DD
VOUT
V
DD
VOUT
_
+
_
+
R1
R2
R1
R2
Vref
Vref
GND
GND
CE
Current Limit
CE
Current Limit
2
2
4
4
In these ICs, fluctuation of the output voltage, VOUT is detected by feed-back registers R1, R2, and the result is
compared with a reference voltage by the error amplifier, so that a constant voltage is output.
A current limit circuit for protection at short mode, and a chip enable circuit, are included.
6
R1122N
TEST CIRCUITS
CE
CE
4
4
VOUT
V
OUT
VDD
V
DD
IN
IN
OUT
IOUT
OUT
R1122Nxx1B
Series
R1122Nxx1B
Series
3
3
1
1
I
SS
2
2
GND
GND
2.2μF
2.2μF
Fig.1 Standard test Circuit
Fig.2 Supply Current Test Circuit
CE
4
CE
4
V
OUT
V
OUT
V
DD
V
DD
IN
IN
OUT
OUT
R1122Nxx1B
Series
R1122Nxx1B
Series
3
3
1
1
I
OUT
I
OUT
P.G
2
2
GND
GND
I1
I2
2.2μF
Fig.3 Ripple Rejection, Line Transient
Response Test Circuit
Fig.4 Load Transient Response Test Circuit
7
R1122N
TECHNICAL NOTES
When using these ICs, consider the following points:
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series
Resistance).
(Note: When the additional ceramic capacitors are connected to the output pin with the output capacitor for
phase compensation, the operation might be unstable. Because of this, test these ICs with the same external
components as the ones to be used on the PCB.)
Recommended Capacitors ; GRM40X5R225K6.3 (Murata)
GRM40-034X5R335K6.3 (Murata)
GRM40-034X5R475K6.3 (Murata)
PCB Layout
Make VDD and GND lines sufficient. If their impedance is high, picking up the noise or unstable operation may
result. Connect a capacitor with a capacitance of 2.2μF or more between VDD and GND pin as close as possible.
Set external components, especially output capacitor as close as possible to the ICs and make wiring as short
as possible.
TYPICAL APPLICATION
CE
CE
R1122Nxx1A
Series
R1122Nxx1B
Series
V
OUT
V
OUT
IN
OUT
IN
OUT
VDD
VDD
+
+
+
+
GND
GND
Cap.
Cap.
Cap.
Cap.
(External Components)
Output Capacitor ; Ceramic 2.2μF (Set output voltage in the range from 2.5 to 5.0V)
Ceramic 4.7μF (Set output voltage in the range from 1.5 to 2.5V)
Input Capacitor ; Ceramic 2.2μF
8
R1122N
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R1122N151B
R1122N201B
2.5
2
1.8
1.6
1.4
VIN=2.0V
VIN=2.5V
VIN=3.5V
1.2
1
VIN=2.3V
VIN=2.5V
VIN=3.0V
VIN=4.0V
1.5
1
0.8
0.6
0.4
0.5
0
0.2
0
0
100
200
300
400
500
0
100
200
300
400
500
Output Current IOUT(mA)
Output Current IOUT(mA)
R1122N301B
R1122N401B
3.5
3
5
4
3
2
1
0
2.5
2
V
IN=3.3V
IN=3.5V
IN=4.0V
IN=5.0V
V
IN=4.3V
IN=4.5V
IN=5.0V
IN=6.0V
V
V
V
V
V
V
1.5
1
0.5
0
0
100
200
300
400
500
0
100
200
300
400
500
Output Current IOUT(mA)
Output Current IOUT(mA)
R1122N501B
6
5
4
3
2
1
0
V
IN=5.3V
IN=5.5V
IN=6.0V
IN=7.0V
V
V
V
0
100
200
300
400
500
Output Current IOUT(mA)
9
R1122N
2) Output Voltage vs. Input Voltage
R1122N151B
R1122N201B
1.600
2.100
2.000
1.900
1.800
1.700
1.600
1.500
1.500
1.400
1.300
1.200
1.100
1.000
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=1mA
IOUT=30mA
IOUT=50mA
1
2
2
2
3
4
5
6
7
7
7
1
2
3
4
5
6
7
Input Voltage VIN(V)
Input Voltage VIN(V)
R1122N301B
R1122N401B
3.100
3.000
2.900
2.800
2.700
2.600
2.500
4.500
4.000
3.500
3.000
2.500
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
I
OUT=1mA
OUT=30mA
OUT=50mA
I
I
3
4
5
6
2
3
4
5
6
7
Input Voltage VIN(V)
Input Voltage VIN(V)
R1122N501B
5.500
5.000
4.500
4.000
3.500
3.000
2.500
I
OUT=1mA
OUT=30mA
OUT=50mA
I
I
3
4
5
6
Input Voltage VIN(V)
10
R1122N
3) Dropout Voltage vs. Output Current
R1122N151B
R1122N201B
0.600
0.600
0.500
0.400
0.300
0.200
0.100
0.000
Topt=-40°C
Topt=25°C
Topt=85°C
Topt=-40°C
Topt=25°C
Topt=85°C
0.500
0.400
0.300
0.200
0.100
0.000
0
0
0
50
100
150
150
150
0
50
100
150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1122N301B
R1122N401B
0.600
0.500
0.400
0.300
0.200
0.100
0.000
0.600
0.500
0.400
0.300
0.200
0.100
0.000
Topt=-40°C
Topt=25°C
Topt=85°C
Topt=-40°C
Topt=25°C
Topt=85°C
50
100
0
50
100
150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1122N501B
0.600
0.500
0.400
0.300
0.200
0.100
0.000
Topt=-40°C
Topt=25°C
Topt=85°C
50
100
Output Current IOUT(mA)
11
R1122N
4) Output Voltage vs. Temperature
R1122N151A/B
R1122N201A/B
V
IN=2.5V CIN=1μF
VIN=3.0V CIN=1μF
COUT=2.2μF IOUT=30mA
C
OUT=2.2μF IOUT=30mA
1.53
1.52
2.10
2.08
2.06
2.04
2.02
2.00
1.98
1.96
1.94
1.92
1.90
1.51
1.50
1.49
1.48
1.47
-50
-50
-50
-25
-25
-25
0
25
100
50
75
-50
-25
0
25
100
50
75
Temperature Topt (°C)
Temperature Topt (°C)
R1122N301A/B
R1122N401A/B
VIN=5.0V CIN=1μF
V
IN=4.0V CIN=1μF
COUT=2.2μF IOUT=30mA
C
OUT=2.2μF IOUT=30mA
4.08
4.06
4.04
4.02
3.06
3.04
3.02
3.00
2.98
4.00
3.98
3.96
3.94
2.96
2.94
3.92
-50
-25
0
25
100
0
25
100
50
75
50
75
Temperature Topt (°C)
Temperature Topt (°C)
R1122N501A/B
V
IN=6.0V CIN=1μF
C
OUT=2.2μF IOUT=30mA
5.10
5.08
5.06
5.04
5.02
5.00
4.98
4.96
4.94
4.92
4.90
0
25
100
50
75
Temperature Topt (°C)
12
R1122N
5) Supply Current vs. Input Voltage
R1122N151B
R1122N201B
120
120
100
100
80
60
40
20
0
80
60
40
20
0
1
1
1
2
2
2
3
4
5
6
6
6
7
7
7
1
2
3
4
5
6
7
Input Voltage VIN (V)
Input Voltage VIN (V)
R1122N301B
R1122N401B
120
100
120
100
80
60
40
20
0
80
60
40
20
0
3
4
5
1
2
3
4
5
6
7
Input Voltage VIN (V)
Input Voltage VIN (V)
R1122N501B
120
100
80
60
40
20
0
3
4
5
Input Voltage VIN (V)
13
R1122N
6) Supply Current vs. Temperature
R1122N151A/B
R1122N201A/B
V
C
IN=2.5V CIN=1μF
V
C
IN=3.0V CIN=1μF
OUT=2.2μF
OUT=2.2μF
200
150
100
50
200
150
100
50
0
0
-50
-25
-25
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt (°C)
Temperature Topt (°C)
R1122N301A/B
R1122N401A/B
V
C
IN=4.0V CIN=1μF
OUT=2.2μF
V
IN=5.0V CIN=1μF
COUT=2.2μF
200
150
100
50
200
150
100
50
0
0
-50
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt (°C)
Temperature Topt (°C)
R1122N501A/B
V
C
IN=6.0V CIN=1μF
OUT=2.2μF
200
150
100
50
0
-50
0
25
50
75
100
Temperature Topt (°C)
14
R1122N
7) Ripple Rejection vs. Frequency
R1122N151A/B
R1122N201A/B
VIN=2.5V+0.5Vp-p
VIN=3.0V+0.5Vp-p
C
OUT=2.2μF IOUT=30mA
COUT=2.2μF IOUT=30mA
90.00
80.00
90.00
80.00
70.00
60.00
50.00
40.00
30.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
20.00
10.00
0.00
0.1
0.1
0.1
1
10
100
0.1
1
10
100
Frequency Freq (kHz)
Frequency Freq (kHz)
R1122N301A/B
R1122N401A/B
V
IN=4.0V+0.5Vp-p
OUT=2.2μF IOUT=30mA
V
IN=5.0V+0.5Vp-p
OUT=2.2μF IOUT=30mA
C
C
90.00
80.00
90.00
80.00
70.00
60.00
50.00
40.00
30.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
20.00
10.00
0.00
1
10
100
0.1
1
10
100
Frequency Freq (kHz)
Frequency Freq (kHz)
R1122N501A/B
V
IN=6.0V+0.5Vp-p
OUT=2.2μF IOUT=30mA
C
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
1
10
100
Frequency Freq (kHz)
15
R1122N
8) Ripple Rejection vs. Input Voltage (DC bias)
R1122N301B
R1122N301B
C
OUT=Ceramic 2.2μF
C
OUT=Ceramic 2.2μF
IOUT=1mA
IOUT=10mA
90.00
80.00
90.00
80.00
70.00
60.00
50.00
40.00
30.00
70.00
60.00
50.00
40.00
30.00
f=400Hz
f=1kHz
f=10kHz
f=400Hz
f=1kHz
f=10kHz
20.00
10.00
0.00
20.00
10.00
0.00
3.10
3.20
3.30
3.40
3.50
3.10
3.20
3.30
3.40
3.50
Input Voltage VIN (V)
Input Voltage VIN (V)
R1122N301B
C
OUT=Ceramic 2.2μF
IOUT=50mA
90.00
80.00
70.00
60.00
50.00
40.00
30.00
f=400Hz
f=1kHz
f=10kHz
20.00
10.00
0.00
3.10
3.20
3.30
3.40
3.50
Input Voltage VIN (V)
9) Input Transient Response
R1122N501B
Tek Run : 2.50MS/s Average
Topt=25°C
VIN
1→
2→
VIN=2.5V↔3.5V
IOUT=30mA
CIN=none
V
OUT
COUT=2.2μF
tr/tf=5μs
ChC1h1 1.00V
Ch2 20.0mV M20.0μs
16
R1122N
R1122N201B
Tek Run : 2.50MS/s Average
Topt=25°C
V
IN
1→
2→
VIN=3.0V↔4.0V
IOUT=30mA
CIN=none
V
OUT
COUT=2.2μF
tr/tf=5μs
Ch1 1.00V
Ch2 20.0mV M20.0μs
R1122N301B
Topt=25°C
Tek Run : 2.50MS/s Average
V
IN
1→
2→
VIN=4.0V↔5.0V
IOUT=30mA
CIN=none
V
OUT
COUT=2.2μF
tr/tf=5μs
Ch1 1.00V
Ch2 20.0mV M20.0μs
R1122N401B
Tek Run : 2.50MS/s Average
Topt=25°C
V
IN
1→
2→
VIN=5.0V↔6.0V
IOUT=30mA
CIN=none
V
OUT
COUT=2.2μF
tr/tf=5μs
Ch1 1.00V
Ch2 20.0mV M20.0μs
17
R1122N
R1122N501B
Tek Run : 2.50MS/s Average
Topt=25°C
V
IN
1→
2→
VIN=6.0V↔7.0V
IOUT=30mA
CIN=none
V
OUT
COUT=2.2μF
tr/tf=5μs
Ch1 1.00V
Ch2 20.0mV M20.0μs
10) Load Transient Response
R1122N151B
Topt=25°C
Tek Run : 2.50MS/s Average
I
OUT
1→
IOUT=50mA↔100mA
VIN=2.5V
CIN=2.2μF
V
OUT
2→
COUT=2.2μF
tr/tf=5μs
Ch1 500mV Ch2 50.0mV M20.0μs
R1122N201B
Topt=25°C
Tek Run : 2.50MS/s Average
I
OUT
1→
IOUT=50mA↔100mA
VIN=3.0V
CIN=2.2μF
V
OUT
2→
COUT=2.2μF
tr/tf=5μs
Ch1 500mV Ch2 50.0mV M20.0μs
18
R1122N
R1122N301B
Tek Run : 2.50MS/s Average
Topt=25°C
I
OUT
1→
IOUT=50mA↔100mA
VIN=4.0V
CIN=2.2μF
V
OUT
2→
COUT=2.2μF
tr/tf=5μs
Ch1 500mV Ch2 50.0mV M20.0μs
R1122N401B
Topt=25°C
Tek Run : 2.50MS/s Average
I
OUT
1→
IOUT=50mA↔100mA
VIN=5.0V
V
OUT
2→
CIN=2.2μF
COUT=2.2μF
tr/tf=5μs
Ch1 500mV Ch2 50.0mV M20.0μs
R1122N501B
Tek Run : 2.50MS/s Average
Topt=25°C
I
OUT
1→
IOUT=50mA↔100mA
VIN=6.0V
CIN=2.2μF
COUT=2.2μF
tr/tf=5μs
V
OUT
2→
Ch1 500mV Ch2 50.0mV M20.0μs
19
R1122N
TECHNICAL NOTES
Spectrum
Analyzer
CE
4
3
V
OUT1
1
Ceramic
Cap.
R1122Nxx1B
S.A
ESR
V
DD
GND
Ceramic
2
Cap.
V
IN
I
OUT
Measuring Circuit for white noise; R1122N301B
The relationship between IOUT (output current) and ESR of the output capacitor is shown in the graphs below.
The conditions when the white noise level is under 40μV (Avg.) are indicated by the hatched area in the graph.
(Note: When additional ceramic capacitors are connected to the output pin with the output capacitor for phase
compensation, operation might be unstable. Because of this, test these ICs with the same external components
as the ones to be used on the PCB.)
<Measuring Conditions>
(1)VIN=VOUT+1V
(2)Frequency band: 10Hz to 1MHz
(3)Temperature: 25°C
20
1.The products and the product specifications described in this document are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before
deciding to use the products, please refer to Ricoh sales representatives for the latest information
thereon.
2.The materials in this document may not be copied or otherwise reproduced in whole or in part without
prior written consent of Ricoh.
3.Please be sure to take any necessary formalities under relevant laws or regulations before exporting or
otherwise taking out of your country the products or the technical information described herein.
4.The technical information described in this document shows typical characteristics of and example
application circuits for the products. The release of such information is not to be construed as a
warranty of or a grant of license under Ricoh's or any third party's intellectual property rights or any
other rights.
5.The products listed in this document are intended and designed for use as general electronic
components in standard applications (office equipment, telecommunication equipment, measuring
instruments, consumer electronic products, amusement equipment etc.). Those customers intending to
use a product in an application requiring extreme quality and reliability, for example, in a highly specific
application where the failure or misoperation of the product could result in human injury or death
(aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and
transportation equipment, combustion equipment, safety devices, life support system etc.) should first
contact us.
6.We are making our continuous effort to improve the quality and reliability of our products, but
semiconductor products are likely to fail with certain probability. In order to prevent any injury to
persons or damages to property resulting from such failure, customers should be careful enough to
incorporate safety measures in their design, such as redundancy feature, fire containment feature and
fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from
misuse or inappropriate use of the products.
7.Anti-radiation design is not implemented in the products described in this document.
8.Please contact Ricoh sales representatives should you have any questions or comments concerning
the products or the technical information.
Ricoh is committed to reducing the environmental loading materials in electrical devices
with a view to contributing to the protection of human health and the environment.
Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since
Halogen Free
April 1, 2012.
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