SGA1263Z-EVB1 [RFMD]
DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK;
| 型号： | SGA1263Z-EVB1 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK |
| 文件： | 总6页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGA1263Z
DCto4000MH
z
Silicon Ger-
manium HBT
Cascadable
Gain Block
SGA1263Z
DCto4000MHz SILICON GERMANIUM HBT
CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
Features
RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar
Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain
response for application to 4GHz. This RFIC is a 2-stage design that pro-
vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-
est SiGe HBT 50GHz FT process, featuring one-micron emitters with
DCto4000MHz Operation
Single Supply Voltage
Excellent Isolation, >50dB at
900MHz
VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain
50 In/Out, Broadband
Match for Operation from DC-
4GHz
drift over 125°C operating range (-40°C to +85°C) and are ideal for use
as buffer amplifiers in oscillator applications covering
Optimum Technology
Matching® Applied
cellular, ISM, and narrowband PCS bands.
Unconditionally Stable
GaAs HBT
Applications
GaAs MESFET
Isolation vs. Frequency
Buffer Amplifier for Oscillator
Applications
InGaP HBT
0
SiGe BiCMOS
-20
-40
-60
-80
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
Broadband Gain Blocks
IF Amp
dB
GaN HEMT
InP HBT
RF MEMS
LDMOS
Frequency MHz
Specification
Parameter
Unit
Condition
Min.
15
12
-13.0
-1.5
Typ.
17
15
-9.5
1.0
Max.
19
17
Small Signal Gain
dB
dB
dBm
dBm
MHz
dB
dB
dB
V
850MHz
1950MHz
1950MHz
1950MHz
Output Power at 1dB Compression
Output Third Order Intercept Point
Determined by Return Loss (<-10dB)
Input Return Loss
Output Return Loss
Noise Figure
9.5
7
11.2
8
2.5
2.8
255
1950MHz
1950MHz
1950MHz
4.0
3.1
Device Voltage
Thermal Resistance
2.5
°C/W
Test Conditions: V =5V, I =8mA Typ., OIP3 Tone Spacing=1MHz, P
per tone=-20dBm, R
=270, T =25°C, Z =Z =50
S
D
OUT
BIAS
L
S
L
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011
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SGA1263Z
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Max Device Current (ID)
Rating
20
Unit
mA
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Max Device Voltage (VD)
Max RF Input Power
5
-12
dBm
°C
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
+150
-40 to +85
+150
°C
°C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I V <(T -T )/R , j-l
D
D
J
L
TH
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Bandwidth
T=25°C
T=25°C
Frequency Range
Device Bias
Operating Voltage
Operating Current
500MHz
DC
4000
MHz
2.8
8
V
mA
T=25°C
T=25°C
T=25°C
T=25°C
Gain
16.0
2.7
4.0
-6.9
8.5
61.6
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
850MHz
Gain
15.7
2.7
2.6
-7.8
8.9
48.4
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
1950MHz
Gain
14.7
3.0
2.8
-7.4
8.8
35.6
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
2400MHz
Gain
14.2
2.8
0.2
-7.0
8.4
33.6
dB
dB
dBm
dBm
dB
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
dB
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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DS111011
SGA1263Z
Pin
1
Function
GND
Description
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
Same as Pin 1.
2
3
4
5
6
GND
RF IN
VCC
GND
RF OUT
RF input pin. This pin requires the ise of an external DC blocking capacitor chosen for the frequency of operation.
Supply Connection. This pin should be bypassed with suitable capacitor(s).
Same as Pin 1.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Application Schematic for +5V Operation at 900MHz
Note: A bias resistor is needed for
stability over temperature
270 Ω
68pF
1uF
VCC=+5V
50Ω
microstrip
50Ω
microstrip
4
3
6
100pF
100pF
1,2,5
Application Schematic for +5V Operation at 1900MHz
270 Ω
1uF
22pF
V
CC=+5V
50Ω
microstrip
4
50Ω
microstrip
6
3
68pF
68pF
1,2,5
Recommended Bias Resistor Values
Supply
3.6V 5V 7.5V 9V
12V
Voltage(Vs)
Rbias
(Ohms)
100 275 588 775 1150
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011
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SGA1263Z
S21, Id =8 mA, T=+25C
S12, Id =8 mA, T=+25C
24
18
12
6
0
-20
-40
-60
-80
dB
dB
0
Frequency MHz
Frequency MHz
S22, Id =8 mA, T=+25C
S11, Id =8 mA, T=+25C
0
-10
-20
-30
-40
0
-10
-20
-30
-40
dB
dB
Frequency MHz
Frequency MHz
S22, Id=8 mA, Ta= +25C
S11, Id=8 mA, Ta= +25C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 6
DS111011
SGA1263Z
Package Dimensions
Pad Layout
Dimensions in inches [millimeters]
RF
OUT
RF
I N
Notes:
1. Provide a large ground pad area under device
pins 1, 2, 4, & 5 with many plated via holes as
shown.
2. Dimensions given for 50 Ohm RF I/O lines are for
31 mil thick Getek. Scale accordingly for different
board thicknesses and dielectric contants.
3. We recommend 1 or 2 ounce copper. Measure-
ments for this data sheet were made on a 31 mil
thick Getek with 1 ounce copper on both sides.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011
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SGA1263Z
Part Identification Marking
Ordering Information
Ordering Code
Description
SGA1263Z
7" Reel with 3000 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
850MHz, 5V Operation PCBA
SGA1263ZSQ
SGA1263ZSR
SGA1263Z-EVB1
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 6
DS111011
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