RFHA1000TR7 [RFMD]
50MHz TO 1000MHz, 15W GaN WIDEBAND; 50MHz至1000MHz ， 15W的GaN WIDEBAND
| 型号： | RFHA1000TR7 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 50MHz TO 1000MHz, 15W GaN WIDEBAND |
| 文件： | 总11页 (文件大小：906K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFHA1000
50MHz to
1000MHz,
15W GaN
Wideband
Power Ampli-
fier
RFHA1000
50MHz TO 1000MHz, 15W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
VGS
Pin 1
Features
Advanced GaN HEMT Technology
Output Power of 15W
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
Advanced Heat-Sink Technology
50MHz to 1000MHz
Instantaneous Bandwidth
Input Internally Matched to 50
GND
BASE
28V Operation Typical
Performance
Output Power 41.5dBm
Gain 17dB
Power Added Efficiency 60%
-40°C to 85°C Operating
Temperature
Functional Block Diagram
Product Description
Large Signal Models Available
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An exter-
nal output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Applications
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure
General Purpose Tx Amplification
Test Instrumentation
Civilian and Military Radar
Ordering Information
RFHA1000S2
2-Piece sample bag
RFHA1000SB
5-Piece bag
RFHA1000SQ
RFHA1000SR
RFHA1000TR7
RFHA1000PCBA-410
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 50MHz to 1000MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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RFHA1000
Absolute Maximum Ratings
Parameter
Rating
150
Unit
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to +2
10
V
G
Gate Current (I )
mA
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operational Voltage
RF- Input Power
32
31
V
dBm
Ruggedness (VSWR)
Storage Temperature Range
12:1
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
-55 to +125
-40 to +85
°C
°C
Operating Temperature Range (T )
L
Operating Junction Temperature (T )
200
°C
J
Human Body Model
Class 1C
6
MTTF (T < 200°C, 95% Confidence Limits)*
Hours
°C/W
J
3 x 10
Thermal Resistance, R (junction to case)
6
TH
measured at T = 85°C, DC bias only
C
* MTTF - median time to failure for wear-out failure mode (30% I
Refer to product qualification report for FIT(random) failure rate.
degradation) which is determined by the technology process reliability.
DSS
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: P
< (T - T )/R J - C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating
Conditions
Drain Voltage (V
)
28
-3
32
-2
V
V
DSQ
Gate Voltage (V
)
-5
GSQ
Drain Bias Current
88
mA
RF Input Power (P
)
30
dBm
IN
Input Source VSWR
10:1
RF Performance
Characteristics
Frequency Range
Linear Gain
50
1000
-10
MHz
dB
Small signal 3dB bandwidth
P = 30dBm, 100MHz
OUT
17.5
Power Gain
14.5
3
dB
dB
P3DB, 100MHz
= 30dBm, 50MHz to 1000MHz
Gain Flatness
P
OUT
Gain Variation with Temperature
Input Return Loss (S
-0.02
dB/°C
dB
)
11
Output Power (P
)
41.5
60
dBm
%
50MHz to 1000MHz
50MHz to 1000MHz
3dB
Power Added Efficiency (PAE)
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RFHA1000
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
[1], [2]
RF Functional Tests
V
-3
V
GS(Q)
Gain
14.8
13.2
16
dB
P
P
= 10dBm
= 27dBm
IN
IN
Power Gain
14.3
-12
dB
dB
Input Return Loss
Output Power
-10
40.2
46
41.3
53
dBm
%
Power Added Efficiency (PAE)
[1] Test Conditions: V
= 28V, I = 88mA, CW, f = 500MHz, T = 25ºC.
DQ
DSQ
[2] Performance in a standard tuned test fixture.
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
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RFHA1000
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to
1000MHz (T = 25°C, unless noted)
SmallꢀSignalꢀsꢁparametersꢀversusꢀFrequency
GainꢀversusꢀFrequency,ꢀPIN =ꢀ27dBm
(VD =ꢀ28V,ꢀIDQ =ꢀ88mA)
(CWꢀ,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
20
16
12
8
20
16
12
8
0
ꢀ5
ꢀ10
ꢀ15
ꢀ20
ꢀ25
85ꢀC
4
4
S21
S11
S22
25ꢀC
ꢀ40ꢀC
0
0
Frequencyꢀ(MHz)
Frequencyꢀ(MHz)
InputꢀReturnꢀLossꢀversusꢀFrequency,ꢀPIN =ꢀ27dBm
PAEꢀversusꢀFrequency,ꢀPIN =ꢀ27dBm
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
100
80
60
40
20
0
0
ꢀ5
ꢀ10
ꢀ15
ꢀ20
ꢀ25
85ꢀC
25ꢀC
ꢀ40ꢀC
85ꢀC
25ꢀC
ꢀ40ꢀC
Frequencyꢀ(MHz)
Frequencyꢀ(MHz)
PAEꢀversusꢀFrequency,ꢀPOUT =ꢀ41dBm
Gain/IRLꢀversusꢀFrequency,ꢀPOUT =ꢀ41dBm
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
20
16
12
8
0
90
80
70
60
50
40
30
ꢀ5
ꢀ10
ꢀ15
ꢀ20
ꢀ25
Gain
IRL
4
0
Frequencyꢀ(MHz)
Frequencyꢀ(MHz)
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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DS120418
RFHA1000
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to
1000MHz (T = 25°C, unless noted)
GainꢀversusꢀFrequency
PowerꢀAddedꢀEfficiencyꢀversusꢀFrequency
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
20
16
12
8
100
80
60
40
20
0
ꢁ=41dBm
POUT
ꢁ=40dBm
POUT
ꢁ=30dBm
POUT
tꢁ=41dBm
tꢁ=40dBm
POUT
POUTtꢁ=30dBm
POUT
4
0
Frequencyꢀ(MHz)
Frequencyꢀ(MHz)
GainꢀversusꢀOutputꢀPower
InputꢀReturnꢀLossꢀversusꢀFrequency
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
19
18
17
16
15
14
13
0
ꢀ5
ꢁ=41dBm
POUT
Pꢁ=40dBm
POUT
ꢁ=30dBm
OUT
ꢀ10
ꢀ15
ꢀ20
ꢀ25
freq=100MHz
freq=500MHz
freq=900MHz
20
25
30
35
40
45
Frequencyꢀ(MHz)
POUT,ꢀOutputꢀPowerꢀ(dBm)
PowerꢀAddedꢀEfficiencyꢀversusꢀOutputꢀPower
InputꢀReturnꢀLossꢀversusꢀOutputꢀPower
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
(CW,ꢀVD =ꢀ28V,ꢀIDQ =ꢀ88mA)
100
80
60
40
20
0
0
ꢀ5
freq=100MHz
freq=500MHz
freq=900MHz
freq=100MHz
freq=500MHz
freq=900MHz
ꢀ10
ꢀ15
ꢀ20
ꢀ25
20
25
30
35
40
45
20
25
30
35
40
45
POUT,ꢀOutputꢀPowerꢀ(dBm)
POUT,ꢀOutputꢀPowerꢀ(dBm)
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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RFHA1000
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 50MHz to
1000MHz (T = 25°C, unless noted)
IMDꢀversusꢀOutputꢀPowerꢀ
IMDꢀversusꢀToneꢀSpacingꢀ
(POUTꢀ=ꢀ12.5WꢀPEP,ꢀꢀVD =ꢀ28V,ꢀIDQ =ꢀ132mA)
(VD =ꢀ28V,ꢀIDQ =ꢀ132mA,ꢀf1ꢀ=ꢀ449.5MHz,ꢀf2ꢀ=ꢀ450.5MHz)
0
ꢀ5
0
ꢀ10
ꢀ20
ꢀ30
ꢀ40
ꢀ50
ꢀ60
ꢀIMD3
ꢀIMD5
ꢀIMD7
IMD3
IMD5
IMD7
ꢀIMD3
ꢀIMD5
ꢀIMD7
IMD3
IMD5
IMD7
ꢀ10
ꢀ15
ꢀ20
ꢀ25
ꢀ30
ꢀ35
ꢀ40
ꢀ45
ꢀ50
f1ꢀ=ꢀ450MHzꢁToneSpacing/2ꢀ
f2ꢀ=ꢀ450MHz+ToneSpacing/2
0.1
1
10
100
0.1
1
10
100
ToneꢀSpacingꢀ(MHz)
POUT,ꢀOutputꢀPowerꢀ(Wꢁ PEP)
IMD3ꢀversusꢀOutputꢀPower
GainꢀversusꢀOutputꢀPower
(2ꢁToneꢀ1MHzꢀSeparation,ꢀVD =ꢀ28V,ꢀIDQꢀvaried,ꢀfcꢀ=ꢀ450MHz)
(2ꢁToneꢀ1MHzꢀSeparation,ꢀVD =ꢀ28V,ꢀIDQ varied,ꢀfcꢀ=450MHz)
ꢀ10
20
19
18
17
16
15
14
13
12
44mA
ꢀ15
ꢀ20
ꢀ25
ꢀ30
ꢀ35
ꢀ40
ꢀ45
88mA
132mA
176mA
220mA
44mA
88mA
132mA
176mA
220mA
15
20
25
30
35
40
0.1
1
10
100
POUT,ꢀOutputꢀPowerꢀ(dBm)
POUT,ꢀOutputꢀPowerꢀ(WꢁPEP)
PowerꢀDissipationꢀDeꢁratingꢀCurve
(BasedꢀonꢀMaximumꢀpackageꢀtemperatureꢀandꢀRTH
)
40
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
90
100
MaximumꢀCaseꢀTemperatureꢀ(°C)
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RFHA1000
Package Drawing
(All dimensions in mm.)
A123 : Trace Code
1234 : Serial Number
Package Style: Ceramic SO8
Pin Names and Descriptions
Pin
1
Name
VGS
Description
Gate DC Bias pin
RF Input
2
RF IN
RF Input
3
RF IN
No Connect
4
N/C
No Connect
5
N/C
RF Output / Drain DC Bias pin
RF Output / Drain DC Bias pin
No Connect
6
7
8
RF OUT/VDS
RF OUT/VDS
N/C
Ground
Pkg
Base
GND
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
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RFHA1000
Bias Instruction for RFHA1000 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG.
4. Apply 28V to VD.
5. Increase VG until drain current reaches 88mA or desired bias point.
6. Turn on the RF input.
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias
network mismatch and losses.
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RFHA1000
Evaluation Board Schematic
V G
V D
C15
C11
C25
R11
C21
R21
L21
1
8
7
6
5
VG
N/C
RFOUT
RFOUT
N/C
2
3
4
RFIN
RFIN
N/C
C1
L20
C2
RF IN
50Ω Microstrip
50Ω Microstrip
RF OUT
C20
U1
RFHA1000
Evaluation Board Bill of Materials (BOM)
Component
Value
2400pF
10000pF
10F
Manufacturer
Dielectric Labs Inc
Murata Electronics
Murata Electronics
ATC
Part Number
C1, C2
C11
C08BL242X-5UN-X0
GRM188R71H103KA01D
GRM21BF51C106ZE15L
100A3R3BW150XC
GRM55ER72A475KA01L
ERJ-3GEYJ471
C15
C20
3.3pF
C25
4.7F
470
Murata Electronics
Panasonic
R11
L20
5.4nH
Coilcraft
0906-5_LB
L21
0.9H
NOT USED
Coilcraft
1008AF-901XJLC
-
C21, R21
-
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
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RFHA1000
Evaluation Board Layout
P1
P2
P3
Device Impedances
Frequency (MHz)
RFHA1000PCBA-410 (50MHz to 1000MHz)
Z Source ()
49.9 - j1.3
50.0 - j1.4
49.6 - j2.2
49.2 - j3.1
48.4 - j4.0
47.6 - j4.5
46.8 - j5.1
45.5 - j5.4
44.8 - j5.4
43.7 - j5.3
43.0 - j5.0
Z Load ()
48.2 + j7.0
49.1 + j1.3
46.8 - j3.3
43.0 - j5.2
38.4 - j5.2
34.1 - j3.7
30.1 - j0.9
26.5 + j2.8
23.8 + j7.0
21.2 + j11.6
19.3 + j16.6
50
100
200
300
400
500
600
700
800
900
1000
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power
performance across the entire frequency bandwidth.
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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DS120418
RFHA1000
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,
high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation
boards.
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than
the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi-
mum limits. RFMD recommends applying VGS = -5V before applying any VDS
.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current
(IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, con-
sidering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device
based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink
but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the max-
imum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi-
ent to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
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