RFCM3050SQ [RFMD]
40-1003MHZ GAAS/GAN POWER DOUBLER MODULE;
| 型号： | RFCM3050SQ |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 40-1003MHZ GAAS/GAN POWER DOUBLER MODULE |
| 文件： | 总6页 (文件大小：832K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm
RFCM3050
Features
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all
Terminations
High Output Capability
24.5dB Min. Gain at 1003MHz
440mA Max. at 24VDC
Applications
40MHz to 1003MHz CATV Amplifier
Systems
Functional Block Diagram
Product Description
The RFCM3050 is a Power Doubler amplifier SMD module. The part employs GaAs MESFET,
GaAs pHemt and GaN Hemt die, has high output capability, and is operated from 40MHz to
1003MHz. It provides excellent linearity and superior return loss performance with low noise
and optimal reliability. DC current of the device can be externally adjusted for optimum
distortion performance vs. power consumption over a wide range of output level.
DC current of the device can be externally adjusted for optimum distortion performance
versus power consumption over a wide range of output level.
Ordering Information
RFCM3050SB
Sample Bag 5 pieces
RFCM3050SQ
Sample Bag 25 pieces
RFCM3050SR
7” Reel with 100 pieces
RFCM3050TR7
RFCM3050TR13
RFCM3050PCBA-410
RFCM3050PCK-410
7” Reel with 500 pieces
13” Reel with 1000 pieces
Fully Assembled Evaluation Board
Fully Assembled Evaluation Board with Sample Pack
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
GaAs MESFET
InGaP HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130621
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
1 of 6
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Voltage (single tone)
70
30
dBmV
V
DC Supply Over-Voltage (5 minutes)
Storage Temperature
-40 to +100
-30 to +100
°C
°C
Operating Mounting Base Temperature
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
V+= 24V; TMB=30°C; ZS=ZL=75Ω
Overall
Power Gain
23.5
24.5
0.5
24.0
25.0
1.0
24.5
26.0
2.0
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
mA
f=50MHz
f=1003MHz
Slope[1]
f=40MHz to 1003MHz
f=40MHz to 1003MHz
f=40MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1003MHz
f=40MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1003MHz
f=50MHz to 1003MHz
Flatness of Frequency Response
Input Return Loss
0.8
-20
-18
-17
-16
-20
-19
-18
-17
Output Return Loss
Noise Figure
Total Current Consumption (DC)
5.0
420.0
5.5
440.0
V+= 24V; TMB=30°C; ZS=ZL=75Ω
Distortion data 40MHz to 550MHz
CTB
-75
-70
-70
66
-70
-65
-65
dBc
dBc
dBc
dB
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]
XMOD
CSO
CIN
60
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital
channels, -6dB offset relative to the equivalent analog carrier.Composite Second Order (CSO) - The CSO parameter (both sum and
difference products) is defined by the NCTA.Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.Cross Modulation
(XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the car-
rier being tested.Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to
noise).
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130621
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
2 of 6
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Current Adjustment Using Resistor R5
The RFCM3050 can be operated over a wide range of current to provide maximum required performance with minimum current consumption.
Changing the value of resistor R5 on application circuit allows a variation of the current between 420mA and 345mA (typ.). Within the range of
current between 420mA and 345mA gain (S21) change is less than 0.4dB and noise figure change is less than 0.1dB.
Current vs. Resistor R5
420,0
410,0
Device Current [mA],
R5 [Ω] typical
400,0
390,0
380,0
370,0
360,0
350,0
340,0
typical
420
400
380
360
350
345
open
3300
1000
300
120
0
V+= 24V; TMB=30°C;
ZS=ZL=75Ω
10
100
1000
10000
100000
Resistor R5 [Ω]
Distortion Degradation
over Device Current, typical values
430
420
410
400
390
380
370
360
350
340
CTB
CIN
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
CTB and CIN degradation [dB]
Test condition:
V+= 24V; TMB=30°C; ZS=ZL=75Ω;
NTSC, 79ch analog; 50 dBmV @ 547.25 MHz; 7 dB tilt, with 75 QAM256 channels (6 dB down)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130621
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
3 of 6
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Application Circuit
FB1
Bead 60Ω
V+
C1
4.7nF
D1
R1
10kΩ
TGL34-33A
D2
MM3Z5V6T1
GND
C13
DNI
9
8
7
6
5
T1
T2
1
RFXF0010
RFXF0008
T3
RFXF0007
C7
4.7nF
C3
1.2pF
2
3
4
C2
4.7nF
RF OUT
R4
10Ω
U1
RF IN
R10
0Ω
RFCM3050
C11
0.5pF
C12
DNI
R5
R7
0Ω
C9
DNI
C10
DNI
R11
0Ω
C14
DNI
C8
4.7nF
D3
C6
1.2pF
R8
TQP200001
0Ω
R12
0Ω
R9
0Ω
Capacity by Bondpads
Capacity by Bondpads
Evaluation Board Layout
Note:
The ground plane of the RFCM3050 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath this
thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power (up to 10.6 Watts).
In any case the module backside temperature should not exceed 100°C.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130621
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
4 of 6
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Component Chart
Component Type
Value
Qty
Designator
Comment
Capacitor
Capacitor
Capacitor
Capacitor
Resistor
Resistor
Resistor
4.7nF
1.2pF
0.5pF
DNI
10kΩ
4
2
1
5
1
1
1
C1, C2, C7,C8
C3, C6
C11
C9, C10, C12, C13, C14 optional to improve matching in application
R1
R4
R5
10Ω
see page 3
optional to set current-value
R7, R8, R9, R10, R11,
optional to improve matching in application
(Capacity by Bondpads)
Resistor
0Ω
6
1
1
R12
FB1
Impedance Bead
Transient Voltage
Suppressor Diode
Zener Diode
ESD-Protection Diode
Transformer
60Ω @ 100MHz
TGL34-33A
D1
MM3Z5V6T1G
TQP200001
RFXF0010
RFXF0008
RFXF0009
RFCM3050
1
1
1
1
1
1
D2
D3
T1
T2
T3
U1
Transformer
Transformer
DUT
Pin Configuration
Pin
1
2
3
4
Function
Description
RF IN (+)
5.6V V+
IDC Adjust
RF IN (-)
RF OUT (-)
GND
RF AMP Positive Input
Supply Voltage 5.6V
Current Adjustment
RF AMP Negative Input
RF AMP Negative Output
Ground
5
6
7
8
24V V+
GND
Supply Voltage 24V
Ground
9
RF OUT (+)
RF AMP Positive Output
1
2
9
8
7
RF OUT +
RF IN +
5.6V V+
GND
GND
24V V+
GND
3
4
6
5
IDC Adjust
RF IN -
RF OUT -
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130621
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
5 of 6
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
Package Drawing
Dimensions in millimeters
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130621
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
6 of 6
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
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