GRM188R71H103KA01D [RFMD]
225MHz TO 1215MHz, 9W GaN WIDEBAND; 225MHz TO 1215MHz ， 9W的GaN WIDEBAND
| 型号： | GRM188R71H103KA01D |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 225MHz TO 1215MHz, 9W GaN WIDEBAND |
| 文件： | 总11页 (文件大小：1628K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFHA1006
225MHz to
1215MHz, 9W
GaN Wide-
band Power
Amplifier
RFHA1006
225MHz TO 1215MHz, 9W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
VGS
Pin 1
Features
Advanced GaN HEMT Technology
Output Power of 9W
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
Advanced Heat-Sink Technology
225MHz to 1215MHz
Instantaneous Bandwidth
Input Internally Matched to 50
GND
BASE
28V Operation Typical
Performance
Output Power 39.5dBm
Gain 16dB
Power Added Efficiency 60%
-40°C to 85°C Operating
Temperature
Functional Block Diagram
Product Description
Large Signal Models Available
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An exter-
nal output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Applications
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure
General Purpose Tx Amplification
Test Instrumentation
Civilian and Military Radar
Ordering Information
RFHA1006S2
2-Piece sample bag
RFHA1006SB
5-Piece bag
RFHA1006SQ
RFHA1006SR
RFHA1006TR7
RFHA1006PCBA-410
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 225MHz to 1215MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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RFHA1006
Absolute Maximum Ratings
Parameter
Rating
150
Unit
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to +2
10
V
G
Gate Current (I )
mA
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operational Voltage
RF- Input Power
32
30
V
dBm
Ruggedness (VSWR)
Storage Temperature Range
12:1
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
-55 to +125
-40 to +85
°C
°C
Operating Temperature Range (T )
L
Operating Junction Temperature (T )
200
°C
J
Human Body Model
Class 1A
6
MTTF (T < 200°C, 95% Confidence Limits)*
Hours
°C/W
J
3 x 10
Thermal Resistance, R (junction to case)
6
TH
measured at T = 85°C, DC bias only
C
* MTTF - median time to failure for wear-out failure mode (30% I
Refer to product qualification report for FIT(random) failure rate.
degradation) which is determined by the technology process reliability.
DSS
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P
< (T - T )/R J - C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating
Conditions
Drain Voltage (V
)
28
-3
32
-2
V
V
DSQ
Gate Voltage (V
)
-5
GSQ
Drain Bias Current
88
mA
RF Input Power (P
)
28
dBm
IN
Input Source VSWR
10:1
RF Performance
Characteristics
Frequency Range
Linear Gain
225
1215
-11
MHz
dB
Small signal 3dB bandwidth
16
14
P
P
P
= 30dBm
OUT
OUT
OUT
Power Gain
dB
dB
= 39.5dBm
Gain Flatness
3
= 30dBm, 225MHz to 1215MHz
Gain Variation with Temperature
-0.02
dB/°C
dB
Input Return Loss (S
Output Power
)
11
39.5
60
dBm
%
225MHz to 1215MHz
225MHz to 1215MHz
Power Added Efficiency (PAE)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 11
DS120418
RFHA1006
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
[1], [2]
RF Functional Tests
V
-3.2
16.6
15.4
V
GS(Q)
Gain
dB
P
P
= 10dBm, 300MHz
IN
IN
Power Gain
14.8
dB
dB
= 24dBm, 300MHz
Input Return Loss
Output Power
-10
-9
39.4
62.5
15
dBm
%
Power Added Efficiency (PAE)
Gain
55
14
dB
P
P
= 10dBm, 1100MHz
= 25dBm, 1100MHz
IN
IN
Power Gain
14.5
dB
dB
Input Return Loss
Output Power
39.5
53
dBm
%
Power Added Efficiency (PAE)
48
[1] Test Conditions: V
= 28V, I
= 88mA, CW, T = 25ºC.
DQ
DSQ
[2] Performance in a standard tuned test fixture.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
3 of 11
RFHA1006
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz
to 1215MHz (T = 25°C, unless noted)
Small Signal s-parameters versus Frequency
Gain versus Frequency, Pin = 25dBm
(VD = 28V, IDQ = 88mA)
(CW , VD = 28V, IDQ = 88mA)
18
15
12
9
0
17
16
15
14
13
12
11
10
-3
-6
-9
6
-12
-15
-18
85°C
25°C
-40°C
S21
S11
S22
3
0
200
400
600
800
1000
1200
1400
Frequency (MHz)
Frequency (MHz)
Input Return Loss versus Frequency, Pin = 25dBm
PAE versus Frequency, Pin = 25dBm
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
70
-6
-8
65
60
55
50
45
40
35
30
25
20
85°C
25°C
-40°C
-10
-12
-14
-16
85°C
25°C
-40°C
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
1400
Frequency (MHz)
Frequency (MHz)
PAE versus Frequency, POUT = 39.5dBm
Gain/IRL versus Frequency, POUT = 39.5dBm
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
18
0
70
65
60
55
50
45
40
35
30
15
12
9
-3
-6
-9
6
-12
-15
-18
Gain
IRL
3
0
Frequency (MHz)
Frequency (MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
4 of 11
DS120418
RFHA1006
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz
to 1215MHz (T = 25°C, unless noted)
Gain versus Frequency
Power Added Efficiency versus Frequency
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
20
16
12
8
80
70
60
50
40
30
20
10
0
=40dBm
POUT
=39.5dBm
POUT
=30dBm
POUT
=40dBm
POUT
POUT
=30dBm
POUT
=39.5dBm
4
0
Frequency (MHz)
Frequency (MHz)
Gain versus Output Power
Input Return Loss versus Frequency
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
19
18
17
16
15
14
13
12
11
10
0
-3
-6
-9
=40dBm
POUT
POUT=39.5dBm
P
OUT=30dBm
-12
freq=300MHz
freq=800MHz
freq=1100MHz
-15
-18
22
25
28
31
34
37
40
Frequency (MHz)
POUT, Output Power (dBm)
Power Added Efficiency versus Output Power
Input Return Loss versus Output Power
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
70
0
-3
freq=300MHz
freq=800MHz
freq=1100MHz
freq=300MHz
freq=800MHz
freq=1100MHz
60
50
40
30
20
10
0
-6
-9
-12
-15
-18
22
25
28
31
34
37
40
22
25
28
31
34
37
40
POUT, Output Power (dBm)
POUT, Output Power (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
5 of 11
RFHA1006
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz
to 1215MHz (T = 25°C, unless noted)
IMD3 versus Output Power
(2-Tone 1MHz Separaꢀon, VD = 28V, IDQ varied, fc = 1100MHz)
-10
-15
-20
-25
-30
-35
44mA
88mA
132mA
176mA
220mA
-40
-45
-50
-55
1
10
100
Pout, Output Power (W-PEP)
Gain versus Output Power
(2-Tone 1MHz Separaꢀon, VD = 28V, IDQ varied, fc = 1100MHz)
17.5
17
16.5
16
15.5
15
44mA
88mA
132mA
176mA
220mA
14.5
14
13.5
13
1
10
100
Pout, Output Power (W-PEP)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
6 of 11
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RFHA1006
Package Drawing
(All dimensions in mm.)
Pin Names and Descriptions
Pin
1
Name
VGS
Description
Gate DC Bias pin
RF Input
2
RF IN
RF Input
3
RF IN
No Connect
4
N/C
No Connect
5
N/C
RF Output/Drain DC Bias pin
RF Output/Drain DC Bias pin
No Connect
6
7
8
RF OUT/VDS
RF OUT/VDS
N/C
Ground
Backside
GND
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
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RFHA1006
Bias Instruction for RFHA1006 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG.
4. Apply 28V to VD.
5. Increase VG until drain current reaches 88mA or desired bias point.
6. Turn on the RF input.
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias
network mismatch and losses.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
8 of 11
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RFHA1006
Evaluation Board Schematic
Evaluation Board Bill of Materials (BOM)
Component
C1, C2
C11
Value
2400pF
10000pF
10F
Manufacturer
Dielectric Labs Inc
Murata Electronics
Murata Electronics
ATC
Part Number
C08BL242X-5UN-X0
GRM188R71H103KA01D
GRM21BF51C106ZE15L
100A3R3BW150XC
GRM55ER72A475KA01L
LQG11A47NJ00
C15
C20
3.3pF
C25
4.7F
47nH
Murata Electronics
Murata Electronics
Coilcraft
R11
L20
3.85nH
82nH
0906-4KLB
L21
Coilcraft
1008HQ-82NXGLC
-
C21, R21
NOT USED
-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120418
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RFHA1006
Evaluation Board Layout
Device Impedances
Frequency (MHz)
RFHA1006PCBA-410 (225MHz to 1215MHz)
Z Source ()
40.4 + j3.4
41.5 + j4.6
42.8 + j5.5
50.8 + j1.4
50.1 - j1.4
Z Load ()
40.6 + j14.1
42.8 + j9.3
42.7 + j5.8
24.5 + j11.9
21.1 + j21.0
19.8 + j27.6
225MHz
300MHz
400MHz
950MHz
1100MHz
1215MHz
49 - j 2.8
Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power
performance across the entire frequency bandwidth.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
10 of 11
DS120418
RFHA1006
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,
high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation
boards.
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than
the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi-
mum limits. RFMD recommends applying VGS = -5V before applying any VDS
.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current
(IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, con-
sidering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this
device based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time,
the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat
sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of
the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the max-
imum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi-
ent to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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