EEV-TG2A101M [RFMD]
30W GaN WIDEBAND POWER AMPLIFIER; 30W的GaN宽带功率放大器
| 型号： | EEV-TG2A101M |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 30W GaN WIDEBAND POWER AMPLIFIER |
| 文件： | 总14页 (文件大小：1806K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF3931
30W GaN WIDEBAND POWER AMPLIFIER
Package Style: Hermetic 2-Pin Flanged Ceramic
Features
RF IN
VGQ
Pin 1 (CUT)
RF OUT
VDQ
Pin 2
Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
GND
BASE
Advanced Heat-Sink
Technology
Gain = 15dB at 2GHz
48V Operation Typical
Performance at 900MHz
• Output Power 50W
• Drain Efficiency 65%
• -40°C to 85°C Operation
Functional Block Diagram
Product Description
The RF3931 is a 48V 30W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien-
tific/medical, and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad fre-
quency range in a single amplifier design. The RF3931 is an unmatched GaN tran-
sistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissi-
pation technologies. Ease of integration is accomplished through the incorporation
of simple, optimized matching networks external to the package that provide wide-
band gain and power performance in a single amplifier.
Applications
Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific and
Medical
Ordering Information
RF3931S2
RF3931SB
RF3931SQ
RF3931SR
RF3931TR7
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
RF3931PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120406
1 of 14
RF3931
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
150
Unit
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to +2
V
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gate Current
23
65
mA
V
Operational Voltage
Ruggedness (VSWR)
Storage Temperature Range
10:1
-55 to +125
-40 to +85
°C
°C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operating Temperature Range (T )
L
Operating Junction Temperature (T )
200
°C
J
Human Body Model
Class 1A
6
MTTF (T < 200°C, 95% Confidence Limits)*
hours
°C/W
J
3 x 10
Thermal Resistance, R (junction to case)
3.6
TH
measured at T = 85°C, DC bias only
C
*MTTF - median time to failure for wear-out failure mode (30%ldss
degradation) which is determined by the technology reliability. Refer to
product qualification report for FIT (random) Failure rate.
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page
two.
Bias Conditions should also satisfy the following expression:
P
< (T – T ) / R J-C and T = T
DISS
J C TH C CASE
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Recommended Operating Conditions
Drain Voltage (V
)
28
-5
48
V
V
DSQ
Gate Voltage (V
)
-3
-2.5
GSQ
Drain Bias Current
130
mA
Frequency of Operation
DC
3500
MHz
Capacitance
C
C
C
4
pF
pF
pF
V
V
V
= -8V, V = 0V
D
RSS
G
G
G
17
12
= -8V, V = 0V
D
ISS
= -8V, V = 0V
OSS
D
DC Function Test
I
- Gate Leakage
2
mA
mA
V
V
V
V
V
= -8V, V = 0V
D
G (OFF)
D (OFF)
G
G
G
G
I
- Drain Leakage
- Threshold Voltage
2.5
= -8V, V = 48V
D
V
V
-4.2
= -8V, I = 6.6mA
D
GS (TH)
DS (ON)
- Drain Voltage at high current
0.25
V
= 0V, I = 1.5A
D
[1],[2]
V = 48V, I = 130mA
D
RF Function Test
V
-3.5
12
V
GS (Q)
D
Gain
10
55
dB
%
CW, P
CW, P
CW, P
= 45.8dBm, f = 2140MHz
= 45.8dBm, f = 2140MHz
= 45.8dBm, f = 2140MHz
OUT
OUT
OUT
Drain efficiency
Input Return Loss
60
-12
-10
dB
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 14
DS120406
RF3931
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
[1],[2]
RF Typical Performance
Small Signal Gain
20
14
dB
dB
CW, f = 900MHz
CW, f = 2140MHz
CW, f = 900MHz
CW, f = 2140MHz
CW, f = 900MHz
CW, f = 2140MHz
Small Signal Gain
Output Power at P3dB
Output Power at P3dB
Drain Efficiency at P3dB
Drain Efficiency at P3dB
[1] Test Conditions: CW Operation, V
47
dBm
dBm
%
46.5
65
65
%
= 48V, I = 130mA, T = 25°C
DSQ
DQ
[2] Performance in a standard tuned test fixture
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120406
3 of 14
RF3931
Typical Performance in standard 2.14GHz fixed tuned test fixture
(CW, T = 25°C, unless noted)
Small Signal Performance vs. Frequency, Pout = 30dBm
(Vd = 48V, Idq = 130mA)
16
15
14
13
12
11
10
9
-5
Fixed tuned test circuit
-7
-9
-11
-13
-15
-17
-19
-21
-23
-25
8
Gain
IRL
7
6
2080
2110
2140
2170
2200
Frequency (MHz)
Gain/IRL vs. Frequency, Pout = 46dBm
Drain Efficiency vs. Frequency, Pout = 46dBm
(CW, Vd = 48V, Idq = 130mA)
(CW, Vd = 48V, Idq = 130mA)
60
58
56
54
52
50
15
14
13
12
11
10
9
-5
Fixed tuned test circuit
Fixed tuned test circuit
-7
-9
-11
-13
-15
-17
-19
-21
-23
-25
Eff
8
7
Gain
2100
IRL
6
5
2080
2080
2100
2120
2140
2160
2180
2200
2120
2140
2160
2180
2200
Frequency (MHz)
Frequency (MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
4 of 14
DS120406
RF3931
Gain/ Efficiency vs. Pout, f = 2140MHz
Gain/ Efficiency vs. Pout, f = 2140MHz
(CW, Vd = 48V, Idq = 130mA)
(Pulsed 10% duty cycle, 10uS, Vd = 48V, Idq = 130mA)
16
14
12
10
8
70
60
50
40
30
20
10
0
16
14
12
10
8
70
60
50
40
30
20
10
0
6
6
Gain
Gain
Drain Eff
Drain Eff
4
4
2
2
29
31
33
35
37
39
41
43
45
47
30
32
34
36
38
40
42
44
46
Pout, Output Power (dBm)
Pout, Output Power (dBm)
IMD3 vs. Pout
Gain vs. Pout
(2-Tone 1MHz Seperaꢀon, Vd = 48V, Idq varied, fc = 2140MHz)
(2-Tone 1MHz Seperaꢀon, Vd = 48V, Idq varied, fc = 2140MHz)
-10
-15
-20
-25
-30
-35
-40
-45
-50
18
17
16
15
14
13
12
11
10
65mA
100mA
130mA
260mA
390mA
65mA
100mA
130mA
260mA
390mA
1
10
100
1
10
100
Pout, Output Power (W-PEP)
Pout, Output Power (W-PEP)
IMD vs. Output Power
(Vd = 48V, Idq = 130mA, f1 = 2139.5MHz, f2 = 2140.5MHz)
0
-10
-20
-30
-40
-50
-60
-70
-IMD3
-IMD5
-IMD7
IMD3
IMD5
IMD7
1
10
Pout, Output Power (W- PEP)
100
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120406
5 of 14
RF3931
Typical Performance in standard 900MHz fixed tuned test fixture
(CW, T = 25°C, unless noted)
Gain/IRL vs. Frequency, Pout = 47dBm
Small Signal Performance vs. Frequency, Pout = 30dBm
(CW, Vd = 48V, Idq = 130mA)
(Vd = 48V, Idq = 130mA)
22
21
20
19
18
17
16
15
14
13
12
0
22
21
20
19
18
17
16
15
14
13
12
0
Fixed tuned test circuit
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
Fixed tuned test circuit
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
Gain
IRL
Gain
IRL
880
890
900
Frequency (MHz)
910
920
880
890
900
Frequency (MHz)
910
920
Gain/ Efficiency vs. Pout, f = 900MHz
Drain Efficiency vs. Frequency, Pout = 47dBm
(CW, Vd = 48V, Idq = 130mA)
(CW, Vd = 48V, Idq = 130mA)
22
21
20
19
18
17
16
15
14
70
60
50
40
30
20
10
0
70
68
66
64
62
60
Fixed tuned test circuit
Eff
Gain
Drain Eff
29
31
33
35
37
39
41
43
45
47
880
890
900
910
920
Pout, Output Power (dBm)
Frequency (MHz)
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
6 of 14
DS120406
RF3931
IMD3 vs. Pout
Gain vs. Pout
(2-Tone 1MHz Seperaꢀon, Vd = 48V, Idq varied, fc = 900MHz)
(2-Tone 1MHz Seperaꢀon, Vd = 48V, Idq varied, fc = 900MHz)
-10
-15
-20
-25
-30
-35
-40
-45
-50
22
21
20
19
18
17
16
15
65mA
100mA
130mA
260mA
390mA
65mA
100mA
130mA
260mA
390mA
1
10
100
1
10
100
Pout, Output Power (W-PEP)
Pout, Output Power (W-PEP)
IMD vs. Output Power
(Vd = 48V, Idq = 130mA, f1 = 899.5MHz, f2 = 900.5MHz)
0
-10
-20
-30
-40
-50
-IMD3
-IMD5
-IMD7
IMD3
IMD5
IMD7
-60
1
10
Pout, Output Power (W- PEP)
100
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120406
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RF3931
Package Drawing
(Package Style: Flanged Ceramic)
Pin
Function
Description
1
2
3
Gate
Drain
Source
Gate - VG RF Input
Drain - VD RF Output
Source - Ground Base
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support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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DS120406
RF3931
Bias Instruction for RF3931 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT
.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 48V to VD.
5. Increase VG until drain current reaches 130mA desired bias point.
6. Turn on the RF input.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120406
9 of 14
RF3931
2.14GHz Evaluation Board Schematic
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2.14GHz Evaluation Board Bill of Materials
Component
Value
33pF
Manufacturer
ATC
Part Number
C1, C2, C10, C11
ATC800A330JT
GRM32NR72A104KA01L
GRM55ER72A475KA01L
ECE-V1HA101UP
ATC800A2R2BT
ATC800A0R7BT
ATC800A1R0BT
ATC800A3R3BT
EEV-TG2A101M
ATC800A100JT
ERJ-8GEYJ100V
-
C3,C14
0.1F
4.7F
100F
2.2pF
0.7pF
1.0pF
3.3pF
100F
10pF
Murata
Murata
Panasonic
ATC
C4,C13
C5
C6
C7
ATC
C8
ATC
C9
ATC
C12
Panasonic
ATC
C15
R1
C16, C17, C18, C19
PCB
10
Panasonic
-
Not used
RO4350, 0.030" thick
dielectric
Rogers
-
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
10 of 14
DS120406
RF3931
2.14GHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
2.6 - j3.1
Z Load (
6.5 + j5.8
6.7 + j6.6
7.0 + j7.4
2110
2140
2170
2.5 - j2.8
2.4 - j2.5
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120406
11 of 14
RF3931
900MHz Evaluation Board Schematic
VGATE
VDRAIN
+
C11
C8
C5
C4
C3
C1
C7
C14
C13
50
C12
+
C10
R1
C6
J2
RF OUT
50
strip
J1
strip
RF3931
RF IN
C9
C2
900MHz Evaluation Board Bill of Materials
Component
Value
68pF
Manufacturer
ATC
Part Number
ATC800B680JT
C1, C2, C10, C11
C3,C14
C4,C13
C5
0.1F
4.7F
100F
12pF
Murata
Murata
Panasonic
ATC
GRM32NR72A104KA01L
GRM55ER72A475KA01L
ECE-V1HA101UP
ATC800B120
C6
C7
5.6pF
6.8pF
2.0pF
330F
10
ATC
ATC800B5R6
C8
ATC
ATC800B6R8
C9
ATC
ATC800B2R0
C12
R1
Panasonic
Panasonic
EEU-FC2A331
ERJ-8GEYJ100V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
12 of 14
DS120406
RF3931
900MHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
4.2 + j9.0
Z Load (
12.9 + j14.2
13.6 + j15.1
14.4 + j16.0
880
900
920
4.3 + j10.0
4.4 + j11.3
Note: Device impedances reported are the measured evaluation board impedances chosen for a trade off of efficiency, peak power, and linearity
performance across the entire frequency bandwidth.
Loadpull contours available on RFMD website.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120406
13 of 14
RF3931
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement pro-
cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS
.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recom-
mended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance.
The user may choose alternate conditions for biasing this device based on performance trade off.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal charac-
teristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mecha-
nisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
14 of 14
DS120406
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