ECJ-2VB2A103K [RFMD]
280W GaN Wideband Pulsed Power Amplifier; 280W氮化镓宽带脉冲功率放大器
| 型号： | ECJ-2VB2A103K |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 280W GaN Wideband Pulsed Power Amplifier |
| 文件： | 总10页 (文件大小：871K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFHA1025
280W GaN
Wideband
Pulsed Power
Amplifier
RFHA1025
280W GaN Wideband Pulsed Power Amplifier
Package: Flanged Ceramic, 2-Pin
Features
Wideband Operation: 0.96GHz to
1.215GHz
RF IN
VG
Pin 1 (CUT)
RF OUT
VD
Pin 2
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
GND
BASE
Conditions
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High Terminal
Impedances
Functional Block Diagram
50V Operation Typical
Performance
Product Description
Output Pulsed Power 280W
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density gallium nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Pulse Width 100S,
Duty Cycle 10%
Small Signal Gain 17dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Ordering Information
RFHA1025S2
RFHA1025SB
RFHA1025SQ
RFHA1025SR
RFHA1025TR13
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
RFHA1025PCBA-410 Fully assembled evaluation board 0.96GHz to .215GHz;50V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
SOI
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120928
1 of 10
RFHA1025
Absolute Maximum Ratings
Parameter
Rating
150
Unit
V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Voltage (V )
D
Gate Voltage (V )
-8 to 2
155
V
G
Gate Current (I )
mA
G
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
-40 to +85
°C
°C
Operating Temperature Range (T )
C
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Operating Junction Temperature (T )
250
°C
J
Human Body Model
Class 1B
MTTF (T < 200°C, 95% Confidence Limits)*
1.8E + 07
Hours
Hours
°C/W
J
MTTF (T < 250°C, 95% Confidence Limits)*
1.1E + 05
J
Thermal Resistance, R (junction to case):
TH
0.90
0.18
0.34
T = 85°C, DC bias only
C
T = 85°C, 100s pulse, 10% duty cycle
C
T = 85°C, 1ms pulse, 10% duty cycle
C
* MTTF - median time to failure for wear-out failure mode (30% I
degradation) which is determined by the technology process reliability.
DSS
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: P
< (T - T )/R J - C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating Conditions
Drain Voltage (V
)
50
-3
V
V
DSQ
Gate Voltage (V
)
-8
-2
GSQ
Drain Bias Current
440
mA
Frequency of Operation
960
1215
MHz
DC Functional Test
I
– Gate Leakage
– Drain Leakage
– Threshold Voltage
2
mA
mA
V
V
= -8V, V = 0V
G (OFF)
D (OFF)
G
G
D
G
D
I
2.5
V
V
V
= -8V, V = 50V
D
V
V
-3.5
= 50V, I = 40mA
D
GS (TH)
– Drain Voltage at High
0.28
V
= 0V, I = 1.5A
D
DS (ON)
Current
[1], [2]
f = 960MHz, P = 28dBm
RF Functional Test
Small Signal Gain
Power Gain
17
14.2
-7.5
55.2
55
dB
dB
IN
13
f = 960MHz, P = 41dBm
IN
Input Return Loss
Output Power
-5
-5
dB
54
50
dBm
%
Drain Efficiency
Small Signal Gain
Power Gain
17
dB
f = 1215MHz, P = 28dBm
IN
13
13.6
-7
dB
f = 1215MHz, P = 41dBm
IN
Input Return Loss
Output Power
dB
54
50
54.6
59
dBm
%
Drain Efficiency
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 10
DS120928
RFHA1025
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
[1], [2]
RF Typical Performance
Frequency Range
960
1215
MHz
dB
Small Signal Gain
17
14
P
P
= 28dBm
IN
Power Gain
dB
= 54.5dBm
OUT
Gain Variation with Temperature
dB/°C
dBm
W
At peak output power
Peak output power
Output Power (P
)
54.5
280
55
SAT
Drain Efficiency
%
At peak output power
[1] Test Conditions: PW = 100s, DC = 10%, V
= 50V, I = 440mA, T = 25°C.
DQ
DSQ
[2] Performance in a standard tuned test fixture.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120928
3 of 10
RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
GainꢀversusꢀOutputꢀPowerꢀ(fꢀ=ꢀ1100MHz)
EfficiencyꢀversusꢀOutputꢀPowerꢀ(fꢀ=ꢀ1100MHz)
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀPW=100jꢀ,ꢀVDꢀ=ꢀ50V, ꢀIDQ =ꢀ440mA)
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀPWꢀ=ꢀ100μS,ꢀVD =ꢀ50V,ꢀIDQꢀ=ꢀ440mA)
20
19
18
17
16
15
14
13
70
60
50
40
30
20
10
Effꢀ85°C
Effꢀ25°C
Effꢀꢁ40°C
Gainꢀ85°C
Gainꢀ25°C
Gainꢀꢁ40°C
47
49
51
53
55
45
47
49
51
53
55
OutputꢀPowerꢀ(dBm)
OutputꢀPowerꢀ(dBm)
SmallꢀSignalꢀPerformanceꢀversusꢀFrequency,ꢀPOUT =ꢀ45dBm
InputꢀReturnꢀLossꢀversusꢀOutputꢀPowerꢀ(fꢀ=ꢀ1100MHz)
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀPWꢀ=ꢀ100μꢀ, ꢀVDꢀ=ꢀ50V,ꢀIDQ =ꢀ440mA)
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀPWꢀ=ꢀ100μS,ꢀVD =ꢀ50V,ꢀIDQꢀ=ꢀ440mA)
ꢁ4
ꢁ6
19
18
17
16
15
14
13
ꢁ7
Fixedꢀtuned testꢀcircuit
ꢁ9
ꢁ8
ꢁ11
ꢁ13
ꢁ15
ꢁ17
ꢁ19
ꢁ10
ꢁ12
ꢁ14
ꢁ16
ꢁ18
ꢁ20
IRLꢀ85°C
IRLꢀ25°C
IRLꢀꢁ40°C
Gain
IRL
47
49
51
53
55
950
1000
1050
1100
1150
1200
1250
OutputꢀPowerꢀ(dBm)
Frequencyꢀ(MHz)
Gain/IRLꢀversusꢀFrequency,ꢀPOUT =ꢀ54.5dBm
DrainꢀEfficiencyꢀversusꢀFrequency,ꢀPOUT =ꢀ54.5dBm
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀPW=100jꢀ, ꢀVD =ꢀ50V,ꢀIDQ =ꢀ440mA)
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀPWꢀ=ꢀ100μS,ꢀVDꢀ=ꢀ50V,ꢀIDQ =ꢀ440mA)
20
19
18
17
16
15
14
13
12
ꢁ6
65
63
61
59
57
55
53
51
49
47
45
Fixedꢀtuned testꢀcircuit
Fixedꢀtuned testꢀcircuit
ꢁ7
ꢁ8
ꢁ9
ꢁ10
ꢁ11
ꢁ12
ꢁ13
ꢁ14
Gain
IRL
Eff
950
1000
1050
1100
1150
1200
1250
950
1000
1050
1100
1150
1200
1250
Frequencyꢀ(MHz)
Frequencyꢀ(MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
4 of 10
DS120928
RFHA1025
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
Gain/EfficiencyꢀversusꢀPOUT,ꢀFreqꢀ=ꢀ1100MHz
POUT/DEꢀversusꢀPulseꢀWidth,ꢀFreqꢀ=ꢀ1100MHz
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀVD =ꢀ50V,ꢀIDQ =ꢀ440mA)
(Pulsedꢀ10%ꢀdutyꢀcycle,ꢀPWꢀ=ꢀ100μS,ꢀVD =ꢀ50V,ꢀIDQ =ꢀ440mA)
20
19
18
17
16
15
14
13
12
65
60
55
50
45
40
35
30
25
400
375
350
325
300
275
250
70
65
60
55
50
45
40
OutputꢀPower
DrainꢀEff
Gain
DrainꢀEff
47
48
49
50
51
52
53
54
55
10
100
PulseꢀWidthꢀ(μsec)
1000
POUT ,ꢀOutputꢀPowerꢀ(dBm)
PulseꢀPowerꢀDissipationꢀDeꢁratingꢀCurve
POUT/DEꢀversusꢀDutyꢀCycle,ꢀFreqꢀ=ꢀ1100MHz
(BasedꢀonꢀMaximumꢀpackageꢀtemperatureꢀandꢀRth)
(Pulsed,ꢀPWꢀ=ꢀ100μS,ꢀVD =ꢀ50V,ꢀIDQ =ꢀ440mA)
1200
375
350
325
300
275
250
225
70
1mSꢀPulseꢀWidth,ꢀ10%ꢀDutyꢀCycle
100ꢂSꢀPulseꢀWidth,ꢀ10%ꢀDutyꢀCycle
1000
800
600
400
200
0
65
60
55
50
45
40
OutputꢀPower
DrainꢀEff
0
20
40
60
80
100
120
140
10
15
20
25
30
35
40
45
50
MaximumꢀCaseꢀTemperatureꢀ(°C)
DutyꢀCycleꢀ(%)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120928
5 of 10
RFHA1025
Package Drawing
(All dimensions in mm.)
16.700
0.600 0.0ꢀ
3.100 4x
2 MIN
3.000
3.ꢀ MAX
1ꢀ.800
2.600 4x
17.40 0.1 8.000
2 MIN
3.ꢀ MAX
3.000
0.2ꢀ4 0.127
Lid
0.600 0.0ꢀ
4.0ꢀ4 0.327
0.100+0.0ꢀ
-0.02
1.400
20.400
3.800 0.2
24.00 0.1
Pin Names and Descriptions
Pin
1
2
Name
Description
Gate – V RF Input
RF IN VG
RF OUT VD
GND BASE
G
Drain – V RF Output
D
Source – Ground Base
3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
6 of 10
DS120928
RFHA1025
Bias Instruction for RFHA1025 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 50V to VD.
5. Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device; when biasing the device, VG must be applied before VD. When removing bias, VD
must be removed before VG is removed. Failure to follow this sequence will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recom-
mended that a small amount of thermal grease is applied to the underside of the device package. Even application and
removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should
then be bolted to the chassis and input and output leads soldered to the circuit board
.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120928
7 of 10
RFHA1025
Evaluation Board Schematic
VDRAIN
VGATE
C16
C15
+
+
C14
L5
L6
L4
L3
R3
R2
C13
C12
C9
C6
C11
C10
C7
C8
R1
L2
L1
J2
RF OUT
50 strip
50 strip
C5
J1
C17
C3
RFHA1025
RF IN
C4
C1
C2
Evaluation Board Bill of Materials
Component
R1,R3
R2
Value
10
51
Manufacturer
Panasonic
Panasonic
ATC
Part Number
ERJ-8GEYJ100V
ERJ-8GEYJ510
ATC800A820JT
ATC800A101JT
ATC800A2R0BT
ATC800A0R2BT
ECJ-2VB1H103K
ECJ-2VB1H104K
ECJ-2VB2A103K
ECJ-2VB2A104K
ECA-2AM100
C6
82pF
C4, C5, C9, C10
C2, C3
C17
100pF
2pF
ATC
ATC
0.2pF
ATC
C12
10000pF
0.1F
10000pF
0.1F
10F
68nH
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Coilcraft
Steward
Steward
-
C13
C7
C8
C14, C16
L1,L2
1812SMS-68NJLB
28F0181-1SR-10
35F0121-1SR-10
-
L5, L6
L3, L4
C1, C11, C15
115, 10A
75, 10A
NOT POPULATED
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
8 of 10
DS120928
RFHA1025
Evaluation Board Layout
Device Impedances
Frequency (MHz)
960MHz
Z Source ()
68 - j10
Z Load ()
63 – j20
1100MHz
55 + j30
65 + j32
1215MHz
30 + j20
40 + j30
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power
performance across the entire frequency bandwidth.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120928
9 of 10
RFHA1025
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a
high humidity, high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement pro-
cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS
.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recom-
mended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance. The
user may choose alternate conditions for biasing this device based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal charac-
teristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mecha-
nisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
10 of 10
DS120928
相关型号：
©2020 ICPDF网 联系我们和版权申明