UPC177G2(20)-E2-A [RENESAS]

Single Power Supply Quad Comparator, SOP, /Embossed Tape;
UPC177G2(20)-E2-A
型号: UPC177G2(20)-E2-A
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Single Power Supply Quad Comparator, SOP, /Embossed Tape

放大器
文件: 总9页 (文件大小:589K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Datasheet  
R03DS0139EJ0100  
Rev.1.00  
μPC177, 339  
Single Power Supply Quad Comparator  
2019.1.16  
DESCRIPTION  
µPC177, µPC339 comparators are designed for single power supply operation. The features include low-  
voltage operation, common-mode input voltage range from V-(GND) level, open-collector output and low  
current consumption. Furthermore, these products can operate with both power supplies and can be widely  
used for various voltage comparison application.  
Depending on the usage and operating ambient temperature range, the μPC177 is design for communication  
industries and μPC339 is design for general purposes.  
In addition, compatible DC parameter selection for the comparators are available under special products.  
Along with this series of lineup, the dual type comparators, μPC277 and 339 with the same circuit configuration  
are also available.  
FEATURES  
Input Offset Voltage  
Input Bias Current  
Voltage Gain  
Pulse Response Time  
A wired OR is possible as the output is an open collector  
Low Voltage Operation  
±2 mV (TYP.)  
25 nA (TYP.)  
1.3 µs (TYP.)  
16 mA (TYP.)  
V + - V - : 2 ~ 32 V  
ORDERING INFORMATION  
Order Name  
Selected Grade  
Package  
μPC177G2-A  
Standard  
14-pin plastic SOP ( 5.72 mm ( 225 ))  
14-pin plastic SOP ( 5.72 mm ( 225 ))  
14-pin plastic SOP ( 5.72 mm ( 225 ))  
14-pin plastic SOP ( 5.72 mm ( 225 ))  
μPC177G2(5)-A  
μPC339G2-A  
DC Parameter Selection  
Standard  
μPC339G2(5)-A  
DC Parameter Selection  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 1 of 8  
μPC177, 339  
EQUIVALENT CIRCUIT (1/4 Circuit)  
PIN CONFIGURATION (Top View)  
V +  
µPC177G2,μPC339G2  
100 μA  
100 μA  
OUT2 1  
OUT1 2  
14 OUT3  
13 OUT4  
12 V -  
Q3  
Q2  
+
-
Q4  
IN  
II  
Q1  
V +  
II1  
3
4
5
6
7
1
- +  
4
- +  
OUT  
Q8  
11 IN4  
10 II4  
IN1  
II2  
Q7  
9 IN3  
2
3
Q5  
Q6  
- +  
- +  
IN2  
8 II3  
V -  
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)  
Parameter  
Symbol  
μPC177G2,  
μPC177G2(5)  
μPC339G2,  
μPC339G2(5)  
Unit  
V
Power Supply Voltage Note 1  
Differential Input Voltage  
Input Voltage Note 2  
Output Voltage Note 3  
Total Power Dissipation Note 4  
V + - V -  
VID  
-0.3 ~ +36  
±36  
V - -0.3 ~ V - +36  
V - -0.3 ~ V - +36  
550  
V
VI  
V
VO  
V
PT  
mW  
Output Short Circuit Duration (vs.  
GND) Note 5  
ts  
Indefinite  
s
Operating Ambient Temperature  
Storage Temperature  
TA  
-40 ~ +85  
-20 ~ +80  
C  
C  
Tstg  
-55 ~ +125  
Note1. Note that reverse connections of the power supply may damage the ICs.  
2. This is the input voltage range that can be applied to the input terminal without any characteristics degradation  
or breakdown. It can be applied regardless of the supply voltage. Do not apply the voltage below V-(GND)-0.3V.  
The comparator electrical characteristics will operate normally when the input voltage is operating within the  
common-mode input voltage range.  
3. Voltage range that can be applied externally to the output terminal without deteriorating or damage to the product.  
It can be applied regardless of the power supply. Caution not to exceed the ratings, including transient  
conditions such as when the power supply is ON/OFF.  
4. Power dissipation value when TA +25 C. For TA 25 C, de-rate at -5.5 mW/C  
5. A short circuit to the V+ side may destroy the IC. Please use the total loss and de-rating value from Note 4.  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 2 of 8  
μPC177, 339  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
MIN.  
±1  
TYP.  
MAX.  
±16  
Unit  
V
Power Supply Voltage (Dual Supply)  
Power Supply Voltage (V - = GND)  
V ±  
V +  
+2  
+32  
V
ELECTRICAL CHARACTERISTICS  
μPC177G2, μPC339G2 (TA = 25 C, V + = +5 V, V - = GND)  
PARAMETER  
Input Offset Voltage  
Input Offset Current  
Input Bias Current Note 6  
Large Signal Voltage Gain  
Circuit Current Note 7  
SYMBOL MIN.  
TYP.  
±2  
MAX.  
±5  
UNIT  
mV  
nA  
TEST CONDITION  
VIO  
IIO  
VO = 1.4 V, VREF = 1.4 V, RS = 0 Ω  
VO 1.4 V  
±5  
±50  
250  
VO 1.4 V  
IB  
25  
nA  
AV  
ICC  
200000  
0.8  
RL = 15 kΩ  
2
mA  
V
RL = ∞, IO = 0 A  
Common Mode Input  
Voltage Range  
VICM  
0
6
V + -1.5  
0.4  
Output Saturation Voltage  
Output Sink Current  
VOL  
0.2  
16  
V
VIN(-) = 1 V, VIN(+) = 0 V, IO SINK = 4 mA  
VIN(-) = 1 V, VIN(+) = 0 V, VO 1.5 V  
IO SINK  
IO LEAK  
mA  
nA  
μs  
Output Leakage Current  
Pulse Response Time Note 8  
0.1  
1.3  
VIN(+) = 1 V, VIN(-) = 0 V, VO = 5 V  
RL = 5.1 kΩ, VRL = 5 V  
μPC177G2 (5), μPC339G2 (5) (TA = 25 C, V + = +5 V, V - = GND)  
PARAMETER  
Input Offset Voltage  
Input Offset Current  
Input Bias Current Note 6  
Large Signal Voltage Gain  
Circuit Current Note 7  
SYMBOL MIN.  
TYP.  
±2  
MAX.  
±2.5  
±50  
60  
UNIT  
mV  
nA  
TEST CONDITION  
VO = 1.4 V, VREF = 1.4 V, RS = 0 Ω  
VO 1.4 V  
VIO  
IIO  
±5  
VO 1.4 V  
IB  
25  
nA  
AV  
ICC  
200000  
0.8  
RL = 15 kΩ  
1.2  
mA  
V
RL = ∞, IO = 0 A  
Common Mode Input  
Voltage Range  
VICM  
0
V + -1.4  
Output Saturation Voltage  
VOL1  
0.2  
1.5  
V
V
VIN(-) = 1 V, VIN(+) = 0 V, IO SINK = 4 mA  
VIN(-) = 1 V, VIN(+) = 0 V, IO SINK =10mA  
VIN(-) = 1 V, VIN(+) = 0 V, VO 1.5 V  
VOL2  
Output Sink Current  
IO SINK  
IO LEAK  
10  
16  
0.1  
1.3  
mA  
nA  
μs  
Output Leakage Current  
Pulse Response Time Note 8  
100  
VIN(+) = 1 V, VIN(-) = 0 V, VO = 5 V  
RL = 5.1 kΩ, VRL = 5 V  
Note6. Direction of the input bias current flowing out of the IC due to first stage of IC consists of PNP transistors  
In addition, the value of this item is the value when the differential amplifier circuit of the input stage is  
balanced. It means that twice the current amount will flow to the lower potential terminal.  
7. Current flowing through the internal circuit. This current flow regardless of the channel used.  
8. Value when the input amplitude is 100mV and the overdrive is 5mV. The response time can be reduces by  
increasing the overdrive value.  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 3 of 8  
μPC177, 339  
TYPICAL APPLICATION CIRCUIT EXAMPLE  
Comparator with Hysteresis  
V+  
VRL  
V+  
RL  
RL  
4, 6, 8, 10  
3
V
IN  
-
INPUT  
-
OUTPUT  
1, 2, 13, 14  
OUTPUT  
5, 7, 9, 11  
VREF  
+
+
12  
R2  
R1  
VREF : V - ~ V + -1.5 [V]  
VREF  
Threshold Voltage  
R1  
V
TH (High) VREF  
+
(VRL - VREF)  
RL + R2 + R1  
R1  
VTH (Low) VREF  
-
(VREF - VOL)  
R1 + R2  
(VRL > VREF > VOL)  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 4 of 8  
μPC177, 339  
ELECTRICAL CHARACTERISTICS CURVE (TA = 25 C, TYP.) (Reference Value)  
PT vs. TA (Absolute Maximum Rating)  
ICC vs. V +  
1000  
800  
600  
400  
200  
0
RL = ∞  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TA = 0 C  
μPC177G2, 339G2  
TA = 25 C  
TA = 70 C  
182 C/W  
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
Power Supply Voltage, V + [V] (V - = GND)  
Operating Ambient Temperature, TA [C]  
VIO vs. TA  
IB vs. V +  
3
2
50  
40  
30  
20  
10  
V + = +5 V  
V - = GND  
Any Sample Data  
1
0
TA = 0 C  
-1  
-2  
-3  
TA = 25 C  
TA = 70 C  
-40  
-20  
0
20  
40  
60  
80  
0
10  
20  
30  
40  
Power Supply Voltage, V + [V] (V - = GND)  
Operating Ambient Temperature, TA [C]  
VOL vs. IO SINK  
10  
1
V + = +15 V  
IO SINK  
VO  
V +  
V + /2  
-
+
0.1  
TA = 70 C  
TA = 25 C  
0.01  
0.001  
TA = 0 C  
0.01  
0.1  
1
10  
100  
Output Sink Current IO SINK [mA]  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 5 of 8  
μPC177, 339  
Pulse Response Characteristics I  
Overdrive 5mV  
Pulse Response Characteristics II  
Overdrive 100mV  
5
4
5
4
5
4
3
2
1
0
5
4
3
2
1
0
+5 V  
5.1 kΩ  
20 mV  
VI  
20 mV  
+5 V  
5.1 kΩ  
VO  
-
3
3
VI  
5 mV  
VO  
2
+
2
-
100 mV  
1
1
+
0
0
100  
50  
0
100  
50  
0
Overdrive 100mV  
Overdrive 5mV  
20 mV  
-50  
-100  
-50  
-100  
5 mV  
20 mV  
100 mV  
1.0  
0
0.5  
1.0  
1.5  
2.0  
0
0.5  
1.5  
2.0  
Time, t [μs]  
Time, t [μs]  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 6 of 8  
μPC177, 339  
USE WITH PRECAUTIONS  
Managing unused circuits  
If there is an unused circuit, the following connection is recommended.  
Example of unused circuit process  
V+  
+
-
OUT  
(Open)  
To potentials within the  
range of common-mode  
input voltage (VICM  
)
V-  
V-  
Ratings of input/output pin voltage  
When the voltage of input/output pin exceeds the absolute maximum rating, the parasitic diode within the  
IC may conduct, causing characteristics degradation or damage. In addition, if the input pin is lower than  
V, or the output pin exceeds the power supply voltage, it is recommended to make a clamping circuit using  
a diode with low forward voltage (e.g.: Schottky diode) as protection.  
Range of common-mode input voltage  
When the supply voltage does not meet the condition of electrical characteristics, the range of common-  
mode input voltage is as follows.  
V
ICM (TYP.): V - ~ V + -1.5 [V] (TA = 25 C)  
During designing, do include some tolerance by considering temperature characteristics etc.  
Regarding Input Current  
The Input Bias Current [IB] specified in the electrical characteristics table, is the average value of current  
flowing through the +input terminal [IN] and the current flowing through the –input terminal [II} in the balanced  
state of the differential amplifier circuit of the input stage (with negative feedback).  
Therefore, since the differential amplifier circuit of the input stage is not balanced during comparison  
operation (in the case of comparator operation), the input current flows twice as much towards the low  
potential terminal.  
Handling of ICs  
When stress is added to the ICs due to warpage or bending of a board, the characteristic may fluctuates  
due to piezoelectric (piezo) effect. Therefore, pay attention to warpage or bending of a board.  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 7 of 8  
μPC177, 339  
PACKAGE DRAWINGS  
14-PIN PLASTIC SOP  
JEITA Package code  
RENESAS code  
Previous code  
MASS (TYP.) [g]  
P-SOP14-0225-1.27  
PRSP0014DI-A  
P14GR-50-225B  
0.14  
Unit : mm  
detail of lead end  
MILLIMETERS  
10.2 ±0.26  
ITEM  
A
B
NOTE  
1.42 MAX  
Each lead centerline is located within 0.12 mm of  
its true position (T.P.) at maximum material condition.  
C
1.27 (T.P)  
+0.08  
0.42  
D
E
F
-0.07  
0.1 ±0.1  
+0.21  
-0.2  
1.59  
G
H
I
1.49  
6.5 ±0.2  
4.4 ±0.1  
1.1 ±0.16  
J
+0.08  
0.17  
K
-0.07  
0.6 ±0.2  
0.1  
0.10  
L
M
N
+7°  
3°  
P
-3°  
R03DS0139EJ0100 Rev.1.00  
2019.1.16  
Page 8 of 8  
Notice  
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for  
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7. 虽然瑞萨电子一直致力于提高瑞萨电子产品的质量和可靠性,但是,半导体产品有其自身的具体特性,如一定的故障发生率以及在某些使用条件下会发生故障等。除非是瑞萨电子数据表或其他瑞萨电子文档中  
指定为高可靠性产品或用于恶劣环境的产品,否则瑞萨电子产品未进行防辐射设计。用户负责执行安全保护措施,以避免因瑞萨电子产品失效或发生故障而造成身体伤害、火灾导致伤害或损害和/或其他对公众  
构成危险的事故。例如进行软硬件安全设计(包括但不限于冗余设计、防火控制以及故障预防等)、适当的老化处理或其他适当的措施等。由于对微机软件单独进行评估非常困难且不实际,所以请用户自行负  
责对最终产品或系统进行安全评估。  
8. 关于环境保护方面的详细内容,例如每种瑞萨电子产品的环境兼容性等,请与瑞萨电子的营业部门联系。用户负责仔细并充分查阅对管制物质的使用或含量进行管理的所有适用法律法规(包括但不限于《欧盟  
RoHS指令》),并在使用瑞萨电子产品时遵守所有适用法律法规。对于因用户未遵守相应法律法规而导致的损害或损失,瑞萨电子概不承担任何责任。  
9. 不可将瑞萨电子产品和技术用于或者嵌入日本国内或海外相应的法律法规所禁止生产、使用及销售的任何产品或系统中。也不可将瑞萨电子产品或技术用于(1)与大规模杀伤性武器(例如核武器、化学武器、生  
物武器或运送此等武器的导弹,包括无人机(UAV))的开发、设计、制造、使用、存储等相关的任何目的;(2)与常规武器的开发、设计、制造或使用相关的任何目的;(3)扰乱国际和平与安全的任何其他目的,  
并且不可向任何第三方销售、出口、租赁、转让、或让与瑞萨电子产品或技术,无论直接或间接知悉或者有理由知悉该第三方或任何其他方将从事上述活动。用户必须遵守对各方或交易行使司法管辖权的任意  
国家/地区政府所公布和管理的任何适用出口管制法律法规。  
10. 瑞萨电子产品的买方或分销商,或者分销、处置产品、或以其他方式向第三方出售或转让产品的任何其他方有责任事先向所述第三方通知本文档规定的内容和条件。  
11. 在事先未得到瑞萨电子书面认可的情况下,不得以任何形式部分或全部再版、转载或复制本文档。  
12. 如果对本文档所记载的信息或瑞萨电子产品有任何疑问,请向瑞萨电子的营业部门咨询。  
(注1) 瑞萨电子:在本文档中指瑞萨电子株式会社及其控股子公司。  
(注2) 瑞萨电子产品:指瑞萨电子开发或生产的任何产品。  
(Rev.4.0-1 November 2017)  
SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
Renesas Electronics Corporation  
Renesas Electronics Hong Kong Limited  
TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan  
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok,  
Kowloon, Hong Kong  
Renesas Electronics America Inc.  
1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A.  
Tel: +1-408-432-8888, Fax: +1-408-434-5351  
Tel: +852-2265-6688, Fax: +852 2886-9022  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Canada Limited  
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3  
Tel: +1-905-237-2004  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K  
Tel: +44-1628-651-700  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050  
Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-6503-0, Fax: +49-211-6503-1327  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics India Pvt. Ltd.  
No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India  
Tel: +91-80-67208700, Fax: +91-80-67208777  
Renesas Electronics (China) Co., Ltd.  
Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics Korea Co., Ltd.  
17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5338  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China  
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999  
© 2018 Renesas Electronics Corporation. All rights reserved.  
Colophon 7.2  

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