UPA828TD-T3-A-FB [RENESAS]
RF SMALL SIGNAL TRANSISTOR;型号: | UPA828TD-T3-A-FB |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | RF SMALL SIGNAL TRANSISTOR |
文件: | 总10页 (文件大小:298K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 1010
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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
PA828TD
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
•
Built-in low phase distortion transistor suited for OSC applications
fT = 9.0 GHz TYP., ⏐S21e⏐2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Built-in 2 transistors (2 × 2SC5436)
•
•
6-pin lead-less minimold (M16, 1208 PKG)
BUILT-IN TRANSISTORS
Q1,
3-pin thin-type ultra super minimold part No.
ORDERING INFORMATION
<R>
Part Number
μPA828TD
Order Number
μPA828TD-A
P
ty
Supplying Form
6-pin le
(Non reel) • 8 mm wide embossed taping
(M1
μPA828TD-T3
μPA828TD-T3-A
0 kpcs/reel
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base)
face the perforation side of the tape
Remark To order evalnearby sales office.
The unit s
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10402EJ03V0DS (3rd edition)
Date Published February 2008 NS
Printed in Japan
2003, 2008
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μPA828TD
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
5.0
3.0
V
2
30
V
mA
mW
Note
Total Power Dissipation
Ptot
90 in 1 element
180 in 2 elements
150
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characterstics
Symbol
Test Condition
P.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE =
−
−
−
−
100
100
140
nA
nA
−
VEB = 1 V,
VCE =
Note 1
hFE
70
RF Characterstics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
fT
GHz
= 2 GHz
mA, f = 2 GHz
20 mA, f = 2 GHz
7.0
9.0
6.0
7.0
−
9.0
11.0
7.5
−
−
GHz
GHz
dB
−
8.5
−
dB
IC = 3 mA, f = 2 GHz,
pt
1.3
2.0
dB
E = 2 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
Noise Figure (2)
−
1.3
2.0
dB
Reverse Transfer Capacitance
hFE Ratio
VCB = 2 V, IE = 0 mA, f = 1 MHz
VCE = 2 V, IC = 20 mA,
hFE1 : Smaller value of Q1 and Q2,
hFE2 : Larger value of Q1 and Q2
−
0.4
0.8
pF
FE1/hFE2
0.85
−
−
−
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
hFE CLASSIFICATION
Rank
FB
kL
Marking
hFE Value
70 to 140
2
Data Sheet PU10402EJ03V0DS
μPA828TD
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
<R>
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
300
250
0.5
0.4
0.3
0.2
0.1
Mounted on Glass Epoxy PCB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
200 2 Elements in total
180
150
Per Element
100
90
50
0
25
50
75
100
125
(˚C)
150
0
2
3
4
5
Ambient Temperature T
A
to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CURRENT vs.
TER VOLTAGE
100
10
1
V
CE = 1 V
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to
Base to Emitter Voltage VBE (V)
COLLECTOR CU
COLLECTOR TO EMVOLTAGE
40
35
30
25
20
15
10
5
500 A
μ
450 A
μ
400
μ
A
300 A
μ
350
μ
A
250
200
150
μ
μ
μ
A
A
A
100
μ
A
I
B
= 50
μ
A
0
1
2
3
4
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10402EJ03V0DS
μPA828TD
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 1 V
VCE = 2 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
ANDWIDTH PRODUCT
CTOR CURRENT
16
12
V
CE = 1 V
f = 2 GHz
8
4
0
4
0
1
1
10
100
Collect
Collector Current I (mA)
C
INSER
MAG, MSY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
20
15
10
5
35
30
25
20
15
10
5
V
CE = 2 V
V
CE = 1 V
IC = 10 mA
IC = 10 mA
MSG
MSG
MAG
MAG
2
2
|S21e
|
|S21e
|
0
0
0.1
1
10
0.1
1
10
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10402EJ03V0DS
μPA828TD
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
20
MSG
MAG
MAG
MSG
2
|S21e
|
16
12
8
16
12
8
2
|S21e
|
4
0
4
0
V
CE = 1 V
V
CE = 2 V
f = 1 GHz
f = 1 GHz
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
IPOWER GAIN, MAG, MSG
OR CURRENT
20
16
12
8
MAG
MSG
MAG
2
|S21e
|
2
|S21e
|
4
0
4
0
VCE = 2 V
f = 2 GHz
1
Collect
1
10
Collector Current I (mA)
100
C
INSERT
vs. COLLE
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
10
8
10
8
MAG
MAG
6
6
2
|S21e
|
4
4
2
|S21e
|
2
0
2
0
V
CE = 1 V
V
CE = 2 V
f = 4 GHz
f = 4 GHz
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10402EJ03V0DS
μPA828TD
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
20
16
12
8
5
4
3
2
20
16
12
8
V
CE = 1 V
VCE = 2 V
Ga
f = 1 GHz
f = 1 GHz
Ga
NF
NF
4
1
0
4
1
0
0
0
1
10
Collector Current I
100
1
10
Cector Current I (mA)
100
C
(mA)
C
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISASSOCIATED GAIN
vs. URRENT
5
4
3
2
20
16
12
5
20
16
12
8
V
CE = 1 V
f = 1.5 GHz
Ga
Ga
NF
NF
4
1
0
0
0
1
10
Collector Cu
1
10
Collector Current I (mA)
100
C
NOISE FIGUR
vs. COLLECTOR
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
20
16
12
8
5
4
3
2
20
16
12
8
V
CE = 1 V
V
CE = 2 V
f = 2 GHz
f = 2 GHz
Ga
Ga
NF
NF
4
1
0
4
1
0
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10402EJ03V0DS
μPA828TD
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
1.0 0.05
+0.07
0.8
–0.05
(Top View)
Q1
C1
E1
C2
B1
E2
B2
1
2
3
6
5
4
Q2
ECTIONS
Q1)
Q1)
tor (Q2)
e (Q2)
mitter (Q2)
. Base (Q1)
7
Data Sheet PU10402EJ03V0DS
μPA828TD
•
The information in this document is current as of February, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no reslity for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of ts or other intellectual
property rights of third parties by or arising from the use of NEC ed in this document
or any other liability arising from the use of such products. d or otherwise, is
granted under any patents, copyrights or other intellectual procs or others.
Descriptions of circuits, software and other related inforprovided for illustrative
purposes in semiconductor product operation and e incorporation of these
circuits, software and information in the design ohall be done under the full
responsibility of the customer. NEC Electronicty for any losses incurred by
customers or third parties arising from the use nd information.
•
• While NEC Electronics endeavors to enhasafety of NEC Electronics products,
customers agree and acknowledge that treof cannot be eliminated entirely. To
minimize risks of damage to proper) to persons arising from defects in NEC
Electronics products, customers safety measures in their design, such as
redundancy, fire-containment a
• NEC Electronics products ang three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality Electronics products developed based on a customer-
designated "quality cific application. The recommended applications of an NEC
Electronics produc, as indicated below. Customers must check the quality grade of
each NEC Electronics t in a particular application.
"Standard": Computerst, communications equipment, test and measurement equipment, audio
and visual eqme electronic appliances, machine tools, personal electronic equipment
and industrial rob
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
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