RQJ0305EQDQS [RENESAS]
Silicon P Channel MOS FET Power Switching; 硅P沟道MOS场效应管电源开关
| 型号： | RQJ0305EQDQS |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET Power Switching |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RQJ0305EQDQS
Silicon P Channel MOS FET
Power Switching
REJ03G1779-0100
Rev.1.00
Mar 16, 2009
Features
•
Low gate drive
VDSS : –30 V and 2.5 V gate drive
Low drive current
High speed switching
•
•
•
Small traditional power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R
)
2, 4
D
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
1 G
4
S
3
Notes: Marking is "EQ".
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–30
Unit
V
+8 / –12
–3.4
V
A
Note1
Drain peak current
ID(pulse)
–12
A
Body - drain diode reverse drain current
Channel dissipation
IDR
3.4
A
Pch Note2
Rth(ch-a) Note2
Tch
1.5
W
Thermal resistance
83
°C /W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 1 of 7
RQJ0305EQDQS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
Min
–30
+8
–12
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
ID = –10 mA, VGS = 0
IG = +100 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = +6 V, VDS = 0
—
—
V
—
—
V
—
+10
–10
–1
µA
µA
µA
V
IGSS
—
—
VGS = –10 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = -1 mA
ID = –1.7 A, VGS = –4.5 V Note3
ID = –1.7 A, VGS = –2.5 V Note3
ID = –1.7 A, VDS = –10 V Note3
VDS = –10 V, VGS = 0,
f = 1 MHz
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
–0.4
—
—
–1.4
140
230
—
110
165
4.3
330
70
mΩ
mΩ
S
—
3.0
—
Ciss
Coss
Crss
td(on)
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output capacitance
—
—
Reverse transfer capacitance
Turn - on delay time
—
40
—
—
17
—
ID = –1.3 A
VGS = –4.5 V
RL = 7.7 Ω
Rg = 4.7 Ω
Rise time
tr
—
37
—
Turn - off delay time
td(off)
—
39
—
Fall time
tf
—
10
—
Total gate charge
Qg
—
3.0
0.6
1.3
–0.9
—
VDD = –10 V
V
GS = –4.5 V
Gate to Source charge
Gate to drain charge
Qgs
—
—
ID = –2.4 A
IF = –3.4 A, VGS = 0 Note3
Qgd
—
—
Body - drain diode forward voltage
Notes: 3. Pulse test
VDF
—
–1.3
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 2 of 7
RQJ0305EQDQS
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
2.0
–100
–10
Ta = 25°C
1 Shot Pulse
100 µs
1.5
1.0
0.5
0
–1
–0.1
–0.01
Operation in this area
is limited by RDS(on)
0
25
50
75
100 125 150
–0.01
–1
–10
–100
–0.1
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Drain to Source Voltage VDS (V)
–8 V
Typical Transfer Characteristics (1)
Typical Output Characteristics
–4 V
–6 V
–10 V
–10
–2.4
–2.2
–1.6
–1.2
–0.8
–0.4
–3.2 V
–3.0 V
–2.8 V
–2.6 V
–2.4 V
VDS = –10 V
Pulse Test
–8
–6
–4
–2.2 V
–2.0 V
–1.8 V
–1.6 V
Tc = 75°C
25°C
–2
0
–25°C
Pulse Test
Tc = 25
VGS = 0V
°
C
0
0
–1
–2
–3
–4
0
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
–1.5
–1
–0.1
Tc = 75°C
ID = –10 mA
–1 mA
25°C
–1.0
–0.5
0
–25°C
–0.01
–0.001
–0.1 mA
VDS = –10 V
Pulse Test
VDS = –10 V
Pulse Test
–0.0001
0
–0.5 –1
–1.5 –2
–2.5 –3
–25
0
25
50 75 100 125 150
Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 3 of 7
RQJ0305EQDQS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–0.5
–0.4
–0.3
1
Pulse Test
Tc = 25°C
V
GS = –2.5 V
–4.5 V
–10 V
ID = –2.4 A
–2.0 A
0.1
–0.2
–1.5 A
–1.0 A
–0.1
0
Pulse Test
Tc = 25°C
0.01
0
–2
–4
–6
–8
–10
–0.1
–1
–10
–100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
0.2
0.3
ID = –2.4 A
ID = –2.4 A
0.25
0.2
–2.0 A
–2.0 A
0.16
–1.5 A
–1.5 A
–1.0 A
–1.0 A
–0.5A
0.12
0.08
0.02
0
–0.5A
0.15
0.1
0.05
0
Pulse Test
GS = –2.5 V
Pulse Test
VGS = –4.5
V
V
–25
0
25 50
75 100 125 150
C)
–25
0
25 50 75 100 125 150
Case Temperature Tc (
°
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
Forward Transfer Admittance vs.
Drain Current
10
–10000
–1000
–100
–10
Pulse Test
VDS = –10 V
–25°C
Pulse Test
VGS = 0 V
VDS = –30 V
25°C
Tc = 75°C
1
–0.1
–1
–25
–1
–10
0
25 50 75 100 125 150
Drain Current ID (A)
Case Temperature Tc (°C)
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 4 of 7
RQJ0305EQDQS
Switching Characteristics
Dynamic Input Characteristics
0
–10
–20
0
1000
VDD = –10 V
–25 V
VGS = –4.5 V, VDD = –10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
–2
–4
VDD = –10 V
–25 V
100
10
1
t
r
t
d(off)
t
d(on)
t
f
–30
–6
–8
ID = –2.4 A
Tc = 25°C
–40
–10
–0.01
–0.1
0
1
2
3
4
5
–1
Drain Current ID (A)
Gate Charge Qg (nC)
Input Capacitance vs.
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
1000
100
700
650
Ciss
600
550
Coss
Crss
10
1
500
450
400
VDS = 0
f = 1MHz
VGS = 0 V
f = 1 MHz
–0 –5 –10 –15 –20 –25 –30
–10 –8 –6 –4 –2
0
2
4
6
8 10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
–0.6
–10
–8
VGS = 0
Pulse Test
Tc = 25°C
–0.5
–0.4
–0.3
–0.2
–10 V
ID = –10 mA
–2.5, –4.5 V
–6
–4
–0 V
–1 mA
–2
0
VGS = 2.5, 4.5, 10 V
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Source to Drain Voltage VSD (V)
–25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 5 of 7
RQJ0305EQDQS
Switching Time Test Circuit
Switching Time Waveform
10%
Vout
Monitor
Vin
Vin Monitor
D.U.T.
Rg
RL
90%
90%
VDD
= –30 V
Vin
–10 V
90%
10%
10%
Vout
t
t
t
f
d(off)
d(on)
t
r
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 6 of 7
RQJ0305EQDQS
Package Dimensions
Package Name
UPAK
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CA-A
Previous Code
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
4.5 0.1
1.8 Max
1.5 0.1
(1.5)
0.44 Max
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Ordering Information
Part No.
Quantity
Shipping Container
φ178 mm reel, 12 mm Emboss taping
RQJ0305EQDQSTL-E
1000 pcs.
REJ03G1779-0100 Rev.1.00 Mar 16, 2009
Page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
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any other inquiries.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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