RJH60F5DPQ-A0_15 [RENESAS]
600 V - 40 A - IGBT High Speed Power Switching;型号: | RJH60F5DPQ-A0_15 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 600 V - 40 A - IGBT High Speed Power Switching 双极性晶体管 |
文件: | 总8页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJH60F5DPQ-A0
R07DS0326EJ0100
Rev.1.00
Silicon N Channel IGBT
High Speed Power Switching
Apr 06, 2011
Features
•
Low collector to emitter saturation voltage
CE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
V
•
•
•
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
Ratings
600
±30
80
Unit
V
VCES
VGES
V
Collector current
Tc = 25 °C
IC
A
Tc = 100 °C
IC
40
A
Collector peak current
ic(peak) Note1
160
100
260.4
0.48
2.0
A
Collector to emitter diode forward peak current
Collector dissipation
iDF(peak) Note2
A
PC
θj-c
θj-cd
Tj
W
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
°C/W
°C/W
°C
°C
150
Storage temperature
Tstg
–55 to +150
Notes: 1. Pulse width limited by safe operating area.
2. PW ≤ 5 μs, duty cycle ≤ 1%
R07DS0326EJ0100 Rev.1.00
Apr 06, 2011
Page 1 of 7
RJH60F5DPQ-A0
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Symbol
ICES
Min
⎯
⎯
4
Typ
⎯
Max
100
±1
8
Unit
μA
μA
V
Test Conditions
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 40 A, VGE = 15 V
IC = 80 A, VGE = 15 V
VCE = 25 V
IGES
⎯
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
⎯
Note3
Note3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.37
1.7
2780
122
43
1.8
⎯
V
V
Input capacitance
⎯
pF
pF
pF
ns
ns
ns
ns
V
V
GE = 0 V
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Switching time
⎯
⎯
53
⎯
IC = 30 A,
V
CE = 400 V, VGE = 15 V
145
105
85
⎯
Rg = 5 Ω Note3
,
td(off)
tf
⎯
Inductive load
⎯
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
VECF1
VECF2
trr
1.2
1.5
90
2.1
⎯
IF = 20 A
Note3
V
IF = 40 A
⎯
ns
IF = 20 A
diF/dt = 100 A/μs
R07DS0326EJ0100 Rev.1.00
Apr 06, 2011
Page 2 of 7
RJH60F5DPQ-A0
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
1000
100
10
160
120
80
40
0
10.5 V
Pulse Test
Ta = 25
11 V
10 V
°C
9.5 V
13 V
15 V
9 V
1
8.5 V
Tc = 25°C
Single pulse
VGE = 8 V
0.1
0
1
2
3
4
5
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Typical Transfer Characteristics
160
120
80
40
0
3.0
2.6
2.2
1.8
1.4
1.0
VCE = 10 V
Pulse Test
Ta = 25
°C
Pulse Test
IC = 20 A
40 A
80 A
Tc = 75°C
25°C
–25°C
6
8
10 12 14 16 18 20
2
4
6
8
10
12
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
2.2
10
8
VCE = 10 V
Pulse Test
VGE = 15 V
Pulse Test
IC = 80 A
2.0
1.8
1.6
1.4
1.2
1.0
IC = 10 mA
6
40 A
20 A
1 mA
4
2
0
−25
−25
0
25 50 75 100 125 150
0
25 50 75 100 125 150
Junction Temparature Tj (°C)
Junction Temparature Tj (°C)
R07DS0326EJ0100 Rev.1.00
Apr 06, 2011
Page 3 of 7
RJH60F5DPQ-A0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Forward Current vs. Forward Voltage (Typical)
10000
1000
100
100
VGE = 0 V
f = 1 MHz
Cies
80
60
40
Coes
Cres
VGE = 0 V
Ta = 25
20
0
°C
Pulse Test
Ta = 25
50
°C
10
0
100 150 200 250 300
0
1
2
3 4
C-E Diode Forward Voltage VCEF (V)
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
800
16
VGE
VCE
600
400
200
0
12
8
VCC = 300 V
600 V
VCC = 600 V
4
300 V
IC = 40 A
Ta = 25°C
0
100
0
20
40
60
80
Gate Charge Qg (nc)
R07DS0326EJ0100 Rev.1.00
Apr 06, 2011
Page 4 of 7
RJH60F5DPQ-A0
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
1000
100000
10000
1000
100
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150
°C
Eon includes the diode recovery
t
f
d(off)
t
t
100
t
r
Eoff
Eon
d(on)
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
t includes the diode recovery
r
10
10
1
10
100 200
1
10
100 200
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
240
200
160
120
80
1600
1200
800
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
t includes the diode recovery
r
t
f
Eoff
Eon
t
d(off)
t
r
400
t
d(on)
40
0
0
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0326EJ0100 Rev.1.00
Apr 06, 2011
Page 5 of 7
RJH60F5DPQ-A0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
D = 1
0.5
1
0.2
θ – c(t) = γs (t) • θ – c
j
j
θ – c = 0.48 °C/W, Tc = 25°C
0.1
j
0.1
PW
T
PDM
D =
1 shot pulse
0.01
0.02
PW
T
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
D = 1
0.5
1
0.2
0.1
θ – c(t) = γs (t) • θ – c
j
j
θ – c = 2°C/W, Tc = 25°C
j
0.1
PW
T
PDM
D =
0.01
1 shot pulse
100 μ
PW
T
0.01
10 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp
10%
VGE
L
90%
90%
10%
10%
1%
IC
td(on) tr
ton
td(off) tf ttail
toff
D.U.T
VCC
Rg
VCE
10%
R07DS0326EJ0100 Rev.1.00
Apr 06, 2011
Page 6 of 7
RJH60F5DPQ-A0
Preliminary
Package Dimensions
Package Name
TO-247A
JEITA Package Code
RENESAS Code
PRSS0003ZH-A
Previous Code
MASS[Typ.]
6.14g
Unit: mm
5.02 ± 0.19
φ3.60 ± 0.1
15.94 ± 0.19
+ 0.1
– 0.2
2.10
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
5.45
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJH60F5DPQ-A0-T0
240 pcs
R07DS0326EJ0100 Rev.1.00
Apr 06, 2011
Page 7 of 7
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