PS2631-M [RENESAS]
TRANSISTOR OUTPUT OPTOCOUPLER;
| 型号： | PS2631-M |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR OUTPUT OPTOCOUPLER 输出元件 光电 |
| 文件： | 总10页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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2.
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DATA SHEET
PHOTO COUPLERS
PS2631, PS2631L
HIGH COLLECTOR VOLTAGE 6PIN PHOTO COUPLER
DESCRIPTION
PS2631, PS2631L are optically coupled isolators containing a GaAs light emitting diode and a silicophoto
transistor.
PS2631 is in a plastic DIP (Dual In-line Package).
PS2631L is lead bending type (Gull-wing) for surface mount.
FEATURES
•
•
•
•
•
High input to output isolation voltage. (BV: 5 kVr.m.s. MIN.)
High collector to emitter voltage (VCEO). (VCEO: 200 V MIN.)
High speed switching (tr, tf = 10 µs TYP.)
UL recognized [File No. E72422 (S)]
Taping Product number (PS2631L-E3, E4)
APPLICATIONS
Interface circuit for various instrumentations, control uipments.
•
•
•
•
•
AC Line/Digital Logic ················································ Isolate high voltage transient
Digital Logic/Digital Logic ······································· Eliminate spurious ground loops
Twisted Pair line receiver ········································ Eliminate ground loop pick-up
Telephone/Telegraph line receiver ·························· Isolate high voltage transient
High Frequency Power SuppFeeack Control ···· Maintain floating ground
Document No. P11436EJ2V0DS00 (2nd editon)
(Previous No. LC-2261)
Date Published June 1996 P
Printed in Japan
1990
©
PS2631, PS2631L
PACKEGE DIMENSIONS (Unit: mm)
DIP (Dual In-line Package)
Lead Bending type (Gull-wing)
PS2631
PS2631L
10.16 MAX.
10.16 MAX.
6
4
6
4
1
3
1
3
7.62
6.5
7.62
6.5
oduct
0.9 ± 0.25
2.54
2.54
1.34 ± 0.10
MAX.
9.60 ± 0.4
M
0.25
2.54
1.34
2.54
0.50 ± 0.10
MAX.
0 to 15˚
M
0.25
ued Pr
PIN CONNECTION (Top View)
PS2631, PS2631L
6
5
4
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
1
2
3
Discontin
2
PS2631, PS2631L
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Diode
Reverse Voltage
Forward Current
VR
IF
6
80
V
mA
Power Dissipation Temperature Coefficient
Power Dissipation
∆PD/˚C
PD
1.5
150
mW/˚C
mW
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
VCEO
VECO
IC
200
6
50
V
V
m
Power Dissipation Temperature Coefficient
Power Dissipation
Isolation Voltage*1)
∆PC/˚C
PC
3.0
300
5 000
mW/˚C
mW
Vac
BV
Storage Temperature
Operating Temperature
Tstg
Topt
–55 to +150
–55 to +100
°C
°C
*1) AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Forward Voltage
Reverse Current
Capacitance
SYMBOL MIN.
TYP. X. NIT
TEST CONDITIONS
Diode
VF
IR
1.1
1.4
V
IF = 10 mA
µA
pF
nA
VR = 5 V
Ct
0
V = 0, f = 1.0 MHz
Transistor Collector to Emitter Dark Current
DC Current Gain
ICEO
hFE
200
VCE = 200 V, IF = 0
IC = 2 mA, VCE = 5.0 V
IF = 5 mA, VCE = 5.0 V
IF = 10 mA, IC = 2.0 mA
Vin-out = 1.0 kV
300
Coupled
Current Transfer Ratio*2)
Collector Saturation Voltage
Isolation Resistance
Isolation Capacitance
Rise Time*3)
CTR (I
C
50
280
%
V
Vsa
-2
C1-2
tr
0.25
1011
Ω
0.5
10
10
pF
µs
µs
V = 0, f = 1.0 MHz
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
VCC = 5 V, IF = 10 mA, RL = 1 kΩ
Fall Time*3)
tf
*2) CTR rank (%)
*3) Test Circuit for Switching Time
K : 130 to 280
L
:
80 150
Pulse input
V
CC = 5 V
M : 50 to 100
Pulse width = 100 µs
Duty cycle = 1/10
I
F
VOUT
50
RL = 1 k
Ω
3
PS2631, PS2631L
TYPICAL CHARACTERISTICS (TA = 25 °C)
COLLECTOR CURRENT vs.
FORWARD CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
FORWARD VOLTAGE
100
60
50
40
30
20
10
80 mA
60 mA
50 mA
50
100 ˚C
60 ˚C
10
25 ˚C
40 mA
5
0 ˚C
–25 ˚C
–55 ˚C
30 mA
1
0.5
20 mA
15 mA
10 mA
0.1
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Forward Voltage V (V)
I
F
= 5 mA
F
0
5
10
20
25
30
Collector tEmltage VCE (V)
COLLECTOR TO EMITTER DARK CURRENT
vs. AMBIENT TEMPERATURE
LIZED OUTPUT CURRENT vs.
AMENT TEMPERATURE
10000
1000
100
10
1.6
1.
.2
.0
0.8
0.6
0.4
0.2
40 V
20 V
10 V
VCE = 200 V
Normalized to 1.0
at T = 25 ˚C
A
I
V
F
= 5 mA
CE = 5 V
1
–50
–25
0
50
75
100
–50
–25
0
25
50
75
100
Ambient Tperae T
A
(˚C)
Ambient Temperature T (˚C)
A
NORMALIZED OUTPUT CURRENT
vs. BASE RESISTANCE
CURRNT ANSFER RATIO (CTR)
vs. FORWARCURRENT
VCE = 5 V
1.0
20 mA
24
220
200
180
160
140
120
100
80
0.8
0.6
0.4
0.2
IF = 5 mA
CTR = 200%
CTR = 190 %
10 mA
CTR = 120 %
60
40
20
CTR = 60%
5.0 10
0.1
0.5 1.0
50 100
50 k 100 k
500 k 1 M
∞
IF (mA)
Base to Emitter Resistance R (Ω)
B
4
PS2631, PS2631L
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
100
50
300
200
100
1.5 mW/˚C
3.0 mW/˚C
0
1000
100
10
25
50
75
100
125
(˚C)
150
0
25
50
75
10
125
(˚C)
150
Ambient Temperature T
A
Ambient TeeratT
A
SWITCHING TIME vs.
LOAD RESISTANCE
COLLECTOCURNT vs.
COLLECTURATION VOLTAGE
50
I
F
= 10 mA
CC = 5 V
80 mA
40 mA
V
20 mA
10 mA
t
f
10
5
t
s
µ
IF = 5 mA
t
d
1.0
0.5
t
r
1
1
0
50 100
0.1
Ld Resistance R
L
(kΩ)
0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage VCE (sat) (V)
FREQUENCY RESPONSE
.8
0.6
0.4
0.2
0
R
L
= 100 Ω
R = 1 kΩ
L
500 1 k
5 k 10 k
50 k 100 k
500 k
Frequency (Hz)
5
PS2631, PS2631L
NOTES AT MOUNTING
(1) NOTES AT MOUNTING BY INFRARED REFLOW SOLDERING
•
•
•
•
Peak temperature
Time
:
:
235 °C or less (resin surface temperature)
Within 30 sec. (timing during which resin surface temperature is 210 ˚C or more
)
Number of times of reflow : Three
Flux
:
Rosin flux with little chlorine is recommended.
Reflow Temperature Profile
(ACTUAL HEAT)
to 10 s
235 ˚C MAX.
210 ˚C
to 30 s
oduct
120 to 160 ˚C
60 to 90 s
Time (s)
ued Pr
<NOTES>
(1) Please avoid to be remove the residual flux by water after the first reflow processes.
Peak Temperature 235 ˚C or Lower
(2) NOTES AT MOUNTING BY DIP SOLDERING
•
•
•
Temperature: 260 °C or less
Discontin
Time
: Within 10 sec.
Flux
: Rosin flux with little chlorine is recommended.
6
PS2631, PS2631L
[MEMO]
7
PS2631, PS2631L
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means withprior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors whicappear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrr other intellectual
property rights of third parties by or arising from use of a device described hereor any other liability arising
from use of such device. No license, either express, implied or otheis ganted under any patents,
copyrights or other intellectual property rights of NEC Corporation or ot
While NEC Corporation has been making continuous effort to enhance the reliility of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minime risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, mer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, ani-failure features.
NEC devices are classified into the following three quality es:
“Standard“, “Special“, and “Specific“. The Specific quality radapplies only to devices developed based on
a customer designated “quality assurance program“ for a pecific application. The recommended applications
of a device depend on its quality grade, as indicated blow. Customers must check the quality grade of each
device before using it in a particular application
Standard: Computers, office equipment, comunications equipment, test and measurement equipment,
audio and visual equipment, hme electronic appliances, machine tools, personal electronic
equipment and industrial robts
Special: Transportation equipmen(automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime stemssafety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerosquipment, submersible repeaters, nuclear reactor control systems, life
support systems edical equipment for life support, etc.
The quality grade of NEdevices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to ue NEC devices for applications other than those specified for Standard quality grade,
they should contct C Sales Representative in advance.
Anti-radioactivdesign is not implemented in this product.
M4 94.11
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