PS2381-1Y-AX [RENESAS]

4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C;
PS2381-1Y-AX
型号: PS2381-1Y-AX
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C

输出元件 光电
文件: 总14页 (文件大小:173K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Data Sheet  
PS2381-1  
R08DS0134EJ0200  
Rev.2.00  
4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115C  
Oct 30, 2015  
DESCRIPTION  
The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon  
phototransistor.  
This package is mounted in a plastic 4-LSOP (Long Mini-Flat Small Outline Package) for high density applications.  
The package has shield effect to cut off ambient light.  
FEATURES  
Operating ambient temperature: 115C  
Isolation distance (0.4 mm MIN.)  
High isolation voltage (BV = 5 000 Vr.m.s.)  
4-pin LSOP (Long Mini-Flat Small Outline Package) type  
High-speed switching (tr = 4 s TYP., tf = 5 s TYP.)  
Embossed tape product: PS2381-1-F3: 3 000 pcs/reel  
Pb-Free product  
Safety standards  
UL approved: No. E72422  
CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)  
SEMKO approved (EN 60065, EN 60950)  
DIN EN 60747-5-5 (VDE 0884-5) approved (Option)  
CQC approved (GB8898, GB4943)  
PIN CONNECTION  
(Top View)  
4
3
1. Anode  
2. Cathode  
3. Emitter  
4. Collector  
1
2
APPLICATIONS  
Power supply  
FA/OA equipment  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 1 of 12  
PS2381-1  
PACKAGE DIMENSIONS (Unit: mm)  
3.8±0.3  
4
3
10.2±0.3  
7.5±0.2  
1
2
+0.3  
0.7  
2.54  
0.45±0.1  
–0.4  
0.25 M  
PHOTOCOUPLER CONSTRUCTION  
Parameter  
Air Distance  
Unit (MIN.)  
8 mm  
8 mm  
Outer Creepage Distance  
Isolation Distance  
0.4 mm  
MARKING EXAMPLE  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 2 of 12  
PS2381-1  
ORDERING INFORMATION  
Part Number  
Order Number  
Solder Plating  
Specification  
etc.  
Packing Style  
Safety Standard  
Approval  
Application  
Part Number*1  
PS2381-1  
PS2381-1Y-AX  
Pb-Free and  
Halogen Free  
20 pcs (Tape 20 pcs cut)  
Standard products  
(UL, CSA, SEMKO,  
CQC approved)  
PS2381-1  
PS2381-1-F3  
PS2381-1Y-F3-AX  
Embossed Tape 3 000  
pcs/reel  
PS2381-1-V  
PS2381-1Y-V-AX  
20 pcs (Tape 20 pcs cut)  
UL, CSA, SEMKO,  
CQC approved  
PS2381-1-V-F3  
PS2381-1Y-V-F3-AX  
Embossed Tape 3 000  
pcs/reel  
DIN EN 60747-5-5  
(VDE 0884-5)  
approved (Option)  
Note: *1. For the application of the Safety Standard, following part number should be used.  
ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
mA  
Diode  
Forward Current (DC)  
I
F
60  
Reverse Voltage  
V
R
6
V
Power Dissipation Derating*1  
Power Dissipation  
Peak Forward Current*2  
P  
D
/C  
1.0  
mW/C  
mW  
A
P
D
100  
I
FP  
CEO  
ECO  
1.5  
Transistor Collector to Emitter Voltage  
Emitter to Collector Voltage  
Collector Current  
V
V
80  
V
7
50  
V
I
C
mA  
Power Dissipation Derating*1  
P  
C
/C  
1.5  
mW/C  
mW  
Vr.m.s.  
mW  
C  
Power Dissipation  
Isolation Voltage*3  
P
C
150  
BV  
5 000  
250  
Total Power Dissipation  
P
T
Operating Ambient Temperature  
Storage Temperature  
T
A
–40 to +115  
–40 to +125  
T
stg  
C  
Notes: *1. Derating from TA = 25C.  
*2. PW = 100 s, Duty Cycle = 1%  
*3. AC voltage for 1 minute at TA = 25C, RH = 60% between input and output.  
Pins 1-2 shorted together, 3-4 shorted together.  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 3 of 12  
PS2381-1  
ELECTRICAL CHARACTERISTICS (TA = 25C)  
Parameter  
Symbol  
Conditions  
= 5 mA  
= 5 V  
V = 0 V, f = 1 MHz  
MIN.  
TYP.  
MAX.  
1.4  
5
Unit  
V
Diode  
Forward Voltage  
Reverse Current  
Terminal Capacitance  
V
F
I
F
1.1  
I
R
V
R
A  
pF  
nA  
Ct  
15  
Transistor Collector to Emitter  
Dark Current  
I
CEO  
I
F
= 0 mA, VCE = 24 V  
100  
400  
Coupled  
Current Transfer Ratio  
CTR  
I
I
I
F
F
F
= 5 mA, VCE = 5 V  
= 1 mA, VCE = 5 V  
50  
10  
100  
50  
%
V
*1  
(I  
C
/IF)  
Collector Saturation  
Voltage  
V
CE (sat)  
= 10 mA, I  
C
= 2 mA  
0.3  
Isolation Resistance  
Isolation Capacitance  
Rise Time*2  
R
C
I-O  
I-O  
V
I-O = 1 kVDC  
1011  
V = 0 V, f = 1 MHz  
0.4  
4
pF  
s  
t
r
VCC = 5 V, I  
C
= 2 mA, R  
L
=
Fall Time*2  
t
f
5
100   
Notes: *1. CTR rank  
CTR rank  
CTR (%)  
130 to 260  
20 to  
Conditions  
W
I
I
I
I
I
I
I
I
F
F
F
F
F
F
F
F
= 5 mA, VCE = 5 V  
= 1 mA, VCE = 5 V  
= 5 mA, VCE = 5 V  
= 1 mA, VCE = 5 V  
= 5 mA, VCE = 5 V  
= 1 mA, VCE = 5 V  
= 5 mA, VCE = 5 V  
= 1 mA, VCE = 5 V  
L
M
N
100 to 300  
20 to  
50 to 150  
10 to  
50 to 400  
10 to  
*2. Test circuit for switching time  
V
V
CC  
Input  
μ
PW = 100 s  
Duty cycle = 1/10  
t
on  
t
off  
I
F
t
d
t
s
In monitor  
OUT  
50 Ω  
RL = 100 Ω  
90%  
Output  
10%  
t
r
t
f
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 4 of 12  
PS2381-1  
TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified)  
TRANSISTOR POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
DIODE POWER DISSIPATION vs.  
AMBIENT TEMPERATURE  
120  
100  
80  
210  
1.0 mW/°C  
1.5 mW/°C  
180  
150  
120  
90  
60  
40  
60  
20  
30  
0
25  
50  
75  
100 115125  
150  
0
25  
50  
75  
100 115125  
150  
Ambient Temperature TA (°C)  
Ambient Temperature TA (°C)  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
30  
100  
10  
1
TA  
= +115  
°
C
25  
20  
15  
10  
5
IF = 10 mA  
+100  
°
C
C
C
+60  
°
+40  
°
+25  
°
C
C
C
0
°
5 mA  
–20  
–40  
°
°
C
2 mA  
1 mA  
0.1  
0
2
4
6
8
10  
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5  
Collector to Emitter Voltage VCE (V)  
Forward Voltage VF (V)  
COLLECTOR CURRENT vs.  
COLLECTOR SATURATION VOLTAGE  
COLLECTOR TO EMITTER DARK  
CURRENT vs. AMBIENT TEMPERATURE  
100 000  
10  
IF = 10 mA  
5 mA  
10 000  
1 000  
2 mA  
1 mA  
VCE = 24 V  
100  
10  
1
70 V  
1
80 V  
0.1  
0.1  
115  
0
20  
40  
60  
80  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Collector Saturation Voltage VCE (sat) (V)  
Ambient Temperature TA (°C)  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 5 of 12  
PS2381-1  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
NORMALIZED CURRENT TRANSFER  
RATIO vs. AMBIENT TEMPERATURE  
1.6  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
220%  
220%  
CTR@100%  
CTR@100%  
Normalized to 1.0  
at T = 25°C,  
= 5 mA, VCE = 5 V  
Normalized to 1.0  
at T = 25°C,  
= 1 mA, VCE = 5 V  
A
A
I
F
I
F
–50  
25 25  
0
50  
75  
(°C)  
100 125  
–50  
25 25  
0
50  
75  
(°C)  
100 125  
Ambient Temperature T  
A
Ambient Temperature T  
A
SWITCHING TIME vs.  
LOAD RESISTANCE  
SWITCHING TIME vs.  
LOAD RESISTANCE  
100  
1 000  
I
C
= 2 mA, VCC = 5 V,  
I
F
= 5 mA, VCC = 5 V,  
CTR = 220%  
CTR = 220%  
t
t
f
r
t
f
μ
μ
10  
1
100  
10  
1
t
t
d
t
s
s
t
r
t
d
0.1  
1
10  
100  
10  
100  
1 000  
(Ω)  
10 000  
Load Resistance R  
L
Load Resistance R (kΩ)  
L
CURRENT TRANSFER RATIO vs.  
FORWARD CURRENT  
FREQUENCY RESPONSE  
5
0
5
400  
350  
300  
250  
200  
150  
100  
50  
V
n = 3  
CE = 5 V,  
100 Ω  
10  
15  
20  
25  
Sample A  
B
C
300 Ω  
RL = 1 kΩ  
I
V
F
= 5 mA,  
CE = 5 V  
0
0.01  
0.1  
1
10  
(mA)  
100  
0.1  
1
10  
Frequency f (kHz)  
100  
1 000  
Forward Current I  
F
Remark The graphs indicate nominal characteristics.  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 6 of 12  
PS2381-1  
TAPING SPECIFICATIONS (UNIT: mm)  
Outline and Dimensions (Tape)  
2.0 0.1  
4.0 0.1  
3.0 0.2  
+0.1  
–0  
1.ꢀ  
+0.1  
–0  
1.ꢀ  
2.3 0.1  
0.3 0.0ꢀ  
4.3 0.1  
ꢁ.0 0.1  
Tape Direction  
PS23ꢁ1-1-F3  
Outline and Dimensions (Reel)  
2.0 0.ꢀ  
2.0 0.ꢀ  
13.0 0.2  
R 1.0  
21.0 0.ꢁ  
17.ꢀ 1.0  
21.ꢀ 1.0  
Packing: 3 000 pcs/reel  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 7 of 12  
PS2381-1  
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)  
1.3  
9.5  
Remark All dimensions in this figure must be evaluated before use.  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 8 of 12  
PS2381-1  
NOTES ON HANDLING  
1. Recommended soldering conditions  
(1) Infrared reflow soldering  
Peak reflow temperature  
260C or below (package surface temperature)  
10 seconds or less  
60 seconds or less  
120 30 s  
Time of peak reflow temperature  
Time of temperature higher than 220C  
Time to preheat temperature from 120 to 180C  
Number of reflows  
Three  
Flux  
Rosin flux containing small amount of chlorine (The flux  
with a maximum chlorine content of 0.2 Wt% is  
recommended.)  
Recommended Temperature Profile of Infrared Reflow  
(heating)  
to 10 s  
260°C MAX.  
220°C  
to 60 s  
180°C  
120°C  
120±30 s  
(preheating)  
Time (s)  
(2) Wave soldering  
Temperature  
Time  
260C or below (molten solder temperature)  
10 seconds or less  
Preheating conditions 120C or below (package surface temperature)  
Number of times  
Flux  
One (Allowed to be dipped in solder including plastic mold portion.)  
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine  
content of 0.2 Wt% is recommended.)  
(3) Soldering by soldering iron  
Peak temperature (lead part temperature) 350C or below  
Time (each pins)  
3 seconds or less  
Flux  
Rosin flux containing small amount of chlorine (The flux with a  
maximum chlorine content of 0.2 Wt% is recommended.)  
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.  
(b) Please be sure that the temperature of the package would not be heated over 100C.  
(4) Cautions  
Fluxes  
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 9 of 12  
PS2381-1  
2. Cautions regarding noise  
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-  
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum  
ratings.  
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler  
Check the setting values before use, since the forward current conditions at CTR measurement differ according to  
product.  
When using products other than at the specified forward current, the characteristics curves may differ from the  
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual  
operating conditions and thoroughly take variations or the like into consideration before use.  
USAGE CAUTIONS  
1. Protect against static electricity when handling.  
2. Avoid storage at a high temperature and high humidity.  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 10 of 12  
PS2381-1  
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT  
Parameter  
Symbol  
Spec.  
Unit  
Climatic test class (IEC 60068-1/DIN EN 60068-1)  
40/115/21  
Dielectric strength  
maximum operating isolation voltage  
Test voltage (partial discharge test, procedure a for type test and random test)  
Upr = 1.6 UIORM, Pd 5 pC  
UIORM  
Upr  
1 130  
1 808  
Vpeak  
Vpeak  
Test voltage (partial discharge test, procedure b for all devices)  
Upr  
2 119  
Vpeak  
Vpeak  
Upr = 1.875 UIORM, Pd 5 pC  
Highest permissible overvoltage  
UTR  
8 000  
2
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)  
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11))  
Material group (DIN EN 60664-1 VDE0110 Part 1)  
Storage temperature range  
CTI  
175  
III a  
Tstg  
TA  
–40 to +125  
–40 to +115  
C  
C  
Operating temperature range  
Isolation resistance, minimum value  
VIO = 500 V dc at TA = 25C  
Ris MIN.  
Ris MIN.  
1012  
1011  
VIO = 500 V dc at TA MAX. at least 100C  
Safety maximum ratings (maximum permissible in case of fault, see thermal derating  
curve)  
Package temperature  
Tsi  
Isi  
175  
400  
700  
C  
mA  
mW  
Current (input current IF, Psi = 0)  
Power (output or total power dissipation)  
Isolation resistance  
Psi  
VIO = 500 V dc at TA = Tsi  
Ris MIN.  
109  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 11 of 12  
PS2381-1  
This product uses gallium arsenide (GaAs).  
Caution GaAs Products  
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe  
the following points.  
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws  
and/or ordinances, dispose of the product as recommended below.  
1. Commission a disposal company able to (with a license to) collect, transport and dispose of  
materials that contain arsenic and other such industrial waste materials.  
2. Exclude the product from general industrial waste and household garbage, and ensure that the  
product is controlled (as industrial waste subject to special control) up until final disposal.  
• Do not burn, destroy, cut, crush, or chemically dissolve the product.  
• Do not lick the product or in any way allow it to enter the mouth.  
R08DS0134EJ0200 Rev.2.00  
Oct 30, 2015  
Page 12 of 12  
Revision History  
PS2381-1 Data Sheet  
Description  
Summary  
Rev.  
2.00  
Date  
Page  
Oct 30, 2015  
First edition issued  
All trademarks and registered trademarks are the property of their respective owners.  
C - 1  
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Tel: +852-2265-6688, Fax: +852 2886-9022  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics India Pvt. Ltd.  
No.777C, 100 Feet Road, HALStage, Indiranagar, Bangalore, India  
Tel: +91-80-67208700, Fax: +91-80-67208777  
Renesas Electronics Korea Co., Ltd.  
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2015 Renesas Electronics Corporation. All rights reserved.  
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