NX8369TB [RENESAS]
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION; 激光二极管1 310 nm的AlGaInAs MQW - DFB激光二极管，用于10 Gb / s的应用
| 型号： | NX8369TB |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION |
| 文件： | 总9页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
NX8369TB
LASER DIODE
R08DS0043EJ0100
Rev.1.00
Jun 06, 2011
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
DESCRIPTION
The NX8369TB is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for
SFP+/XFP transceiver.
FEATURES
•
•
•
•
•
Internal optical isolator
Optical output power
Low threshold current
Wide operating temperature range
InGaAs monitor PIN-PD
Pf = −2 dBm
Ith = 8 mA TYP. @ TC = 25°C
TC = −40 to +90°C
APPLICATIONS
•
•
•
10 G BASE-LW/LR
10 G Fibre Channel
SONET OC-192
R08DS0043EJ0100 Rev.1.00
Jun 06, 2011
Page 1 of 7
NX8369TB
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
φ
5.0
φ
φ
2.99
2.92
OPTICAL
REFERENCE
PLANE
φ
3.5 0.05
3.5 0.1
φ
φ
φ
4.5 0.05
4.0 0.05
4.6 0.05
φ
GND surface
Signal surface
φ
5.6 0.05
(18.4 MAX.)
BOTTOM VIEW
2.2
φ
2– 0.5
1.2
NC
GND
LD (anode)
LD (cathode)
GND
mPD (cathode)
0.9
Remarks1. Receptacle is electrically isolated from CAN.
2. Characteristic impedance of flexible printed circuit is 25 Ω.
3. NX8369TB has no matching resistor installed.
4. ( ) indicates nominal dimension.
R08DS0043EJ0100 Rev.1.00
Jun 06, 2011
Page 2 of 7
NX8369TB
Chapter Title
ORDERING INFORMATION
Part Number
Receptacle Type
Note
NX8369TB
LC, Electrically isolated Differential input with flexible PCB, without matching resistor
R08DS0043EJ0100 Rev.1.00
Jun 06, 2011
Page 3 of 7
NX8369TB
Chapter Title
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature
Operating Case Temperature
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Symbol
Tstg
Ratings
Unit
°C
°C
mA
V
−40 to +95
−40 to +90
TC
IFLD
120
VRLD
IFPD
2
10
15
mA
V
VRPD
Tsld
Soldering Temperature
(Flexible Printed Circuit)
350 (10 sec.)
°C
Optical Output Power
Pf
5
mW
RECOMMENDED OPERATING CONDITION
Parameter
Bias Current
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Ibias
TC = 25°C, refer to below
Ith +22
mA
Pf
(mW)
P
1
Ex = 10 log
[dB]
P0
P
1
P0
Imod
I
F
0
(mA)
Ibias
R08DS0043EJ0100 Rev.1.00
Jun 06, 2011
Page 4 of 7
NX8369TB
Chapter Title
ELECTRO-OPTICAL CHARACTERISTICS
(T = −40 to +90°C, BOL, unless otherwise specified)
C
Parameter
Symbol
Conditions
MIN.
1 290
35
TYP.
MAX.
Unit
dBm
nm
Mean Optical Output Power
Peak Emission Wavelength
Spectral Width
Pf
λp
Δλ
SMSR
Ith
−2
CW, Pf = −2 dBm
CW, Pf = −2 dBm, 20 dB down
CW, Pf = −2 dBm
1 330
1
nm
Side Mode Suppression Ratio
Threshold Current
dB
CW, TC = 25°C
8
15
30
mA
CW
2
Differential Efficiency
ηd
CW, Pf = −2 dBm, TC = 25°C
0.020
0.008
−3.5
0.029
0.040
0.060
1.5
W/A
dB
CW, Pf = −2 dBm
ηd
Temperature Dependence of
Differential Efficiency
Δηd
Δηd = 10 log
ηd (@ 25°C)
Operation Voltage
Monitor Current
Vop
Im
CW, Pf = −2 dBm
CW, Pf = −2 dBm
VR = 3.3 V, TC = 25°C
VR = 3.3 V
0.5
2.2
1 000
10
V
100
μA
nA
Monitor Dark Current
ID
500
50
Rise Time
Fall Time
tr
tf
20-80%
*1
*1
ps
ps
pF
20-80%
50
Monitor PD Terminal
Capacitance
Ct
VR = 3.3 V, f = 1 MHz
6
20
Relative Intensity Noise
Tracking Error*2
Notes: *1. 9.95/10.3/10.5 Gb/s, PRBS 231−1, NRZ, Duty Cycle = 50%
RIN
*1
−128
1.25
dB/Hz
dB
γ
−1.25
*2. Tracking Error: γ
P
f
P
f
γ = 10 log
[dB]
(mW)
P @ 25°C
f
TC
= 25°C
Pf
@ 25°C
TC = –40 to +90°C
P
f
Im
0
I
m
(mA)
R08DS0043EJ0100 Rev.1.00
Jun 06, 2011
Page 5 of 7
NX8369TB
Chapter Title
REFERENCE
Document Name
Document No.
Opto-Electronics Devices Pamphlet*1
PX10160E
Note: *1. Published by the former NEC Electronics Corporation.
R08DS0043EJ0100 Rev.1.00
Jun 06, 2011
Page 6 of 7
NX8369TB
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
SEMICONDUCTOR LASER
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
AVOID EXPOSURE-Invisible
OUTPUT POWER
WAVELENGTH
mW MAX
nm
Laser Radiation is emitted from
this aperture
CLASS lllb LASER PRODUCT
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
Warning Laser Beam
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
Caution GaAs Products
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
A glass-fiber is attached on the product. Handle with care.
Caution Optical Fiber
• When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part
or fragments.
R08DS0043EJ0100 Rev.1.00
Jun 06, 2011
Page 7 of 7
Revision History
NX8369TB Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Jun 06, 2011
−
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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Colophon 1.1
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