NSAD500H-T1 [RENESAS]
TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,SOT-353;
| 型号： | NSAD500H-T1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,SOT-353 二极管 |
| 文件： | 总5页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SURGE ABSORBER DEVICES
NSAD500H
ELECTROSTATIC DISCHARGE SURGE ABSORBER DEVICES
QUAD TYPE: COMMON ANODE
SC-88A PACKAGE
<R>
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
NSAD500H is a low capacity ESD surge absorber developed for
100 to 500 Mbps-class data line ESD noise protection, such as
USB2.0, IEEE1394, or 100B.
2.1 0.1
1.25 0.1
Based on an IEC61000-4-2 test for electromagnetic interference
(EMI), this device assures an ESD endurance of 8 kV or more on
contact discharge, and its capacity between pins is as small as
about 3.5 pF TYP. Therefore, NSAD500H is suitable for external
interface protection on data communication whose speed has been
increasing.
1
2
3
5
4
FEATURES
• Base on the electrostatic discharge immunity test (IEC 61000-4-2)
product assures the minimum endurance of 8 kV.
• Capacitance: 3.5 pF TYP.
It’s an extraordinarily small capacitance.
• With 4 elements mounted (common anode).
Mounted in the SC-88A package, the products can achiever high
density and automatic packaging.
ELECTRODE CONNECTION
APPLICATIONS
5
4
• USB2.0, IEEE1394, 100B external interface circuit ESD protection.
1. K1: Cathode1
2. A: Anode (common)
3. K2: Cathode2
4. K3: Cathode3
5. K4: Cathode4
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
ITEM
SYMBOL
RATING
UNIT
mW
W
REMARK
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
200
Total
PRSM
Tj
2 (t = 10 μs, 1 pulse)
150
οC
Tstg
−55 to +150
οC
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16235EJ2V0DS00 (2nd edition)
Date Published September 2007 NS
Printed in Japan
2003
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NSAD500H
ELECTRICAL CHARACTERISTICS (TA = 25°C) (A to K1, A to K2, A to K3, A to K4)
Note
BREAK OVER
VOLTAGE
VBO (V)
CAPACITANCE
REVERSE
CURRENT
IR (μA)
ESD
<REFERENCE>
FORWARD
Ct (pF)
(kV)
PARAMETER
BREAK OVER
VOLTAGE
MIN.
TYP.
TYP.
Condition
MAX.
VF (V)
MIN.
8
Condition
C = 150 pF,
R = 330 Ω,
Contact
VR = 0 V,
f = 1 MHz
10 V TYP.
NSAD500H
5.3
8
3.5
0.1
3.0
discharge
Note Based upon with IEC 61000-4-2.
2
Data Sheet D16235EJ2V0DS
NSAD500H
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. I vs. VBO CHARACTERISTICS
250
200
150
100
50
VBO side
-5
0
-15
-10
0
5
10
VF side
15
-50
-100
-150
-200
-250
VBO - Break Over Voltage - V
Figure 2. Ct vs. V CHARACTERISTICS
5
4.5
4
f = 1 MHz
3.5
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
V - Voltage - V
3
Data Sheet D16235EJ2V0DS
NSAD500H
Figure 3. It vs. V CHARACTERISTICS
20
15
10
5
0
−8
−6
−4
−2
0
2
4
6
8
−5
−10
−15
−20
V - Voltage - V
4
Data Sheet D16235EJ2V0DS
NSAD500H
•
The information in this document is current as of September, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
•
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•
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M8E 02. 11-1
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