NESG7030M04 [RENESAS]
NPN Silicon Germanium Carbon RF Transistor; NPN硅锗碳RF晶体管
| 型号： | NESG7030M04 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | NPN Silicon Germanium Carbon RF Transistor |
| 文件： | 总11页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
NESG7030M04
NPN Silicon Germanium Carbon RF Transistor
R09DS0037EJ0100
Rev.1.00
Apr 18, 2012
FEATURES
•
The device is an ideal choice for low noise, high gain amplification.
NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz
•
•
•
•
•
PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz
Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz
SiGe: C HBT technology
This product is improvement of ESD.
Flat-lead 4-pin thin-type super minimold (M04 PKG)
OUTLINE
RENESAS Package code : M04
(Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG))
4
3
1
2
1. Emitter
2. Collector
3. Emitter
4. Base
Note : Marking is "T1R."
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG7030M04
NESG7030M04-A
Flat-lead 4-pin thin-
type super minimold
(M04 PKG)
50 pcs
(Non reel)
• 8 mm wide embossed taping
• Pin 1(Emitter), Pin 2
(Collector) face the
NESG7030M04-T2
NESG7030M04-T2-A
3 kpcs/reel
15kpcs/reel
(Pb-Free)
perforation side of the tape
NESG7030M04-T2B NESG7030M04-T2B-A
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 1 of 9
NESG7030M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Symbol
VCBO
Ratings
Unit
V
10
VCEO
4.3
V
Note1
IB
2
30
mA
mA
mW
°C
Collector Current
IC
Note2
Total Power Dissipation
Junction Temperature
Ptot
125
Tj
150
Storage Temperature
Tstg
−65 to +150
°C
Notes: 1. Depend on the ESD protect device.
2. Mounted on 1.08 cm2 ×1.0 mm (t) glass epoxy PWB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
VCB = 4.3 V, IE = 0
−
−
−
−
100
100
500
nA
nA
−
IEBO
VEB = 0.4 V, IC = 0
Note 1
hFE
VCE = 2 V, IC = 5 mA
200
320
RF Characteristics
Note 2
Reverse Transfer Capacitance
Insertion Power Gain
Maximum Stable Power Gain
Noise Figure (1)
Cre
VCB = 2 V, IE = 0, f = 1 MHz
−
11.0
−
50
80
−
−
fF
2
⏐S21e
⏐
VCE = 2 V, IC = 15 mA, f = 5.8 GHz
13.0
16.5
0. 5
dB
dB
dB
MSG Note 3 VCE = 2 V, IC = 15 mA, f = 5.8 GHz
NF1
Ga1
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−
−
Associated Gain (1)
Noise Figure (2)
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
−
−
21.0
0.75
14.0
4.5
−
1.15
−
dB
dB
NF2
VCE = 2 V, IC = 5 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
Associated Gain (2)
Ga2
VCE = 2 V, IC = 5 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
12.0
−
dB
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 2 V, IC (set) = 10 mA,
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
−
dBm
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
S21
3. MSG =
S12
hFE CLASSIFICATION
Rank
YFB
T1R
Marking
hFE Value
200 to 500
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 2 of 9
NESG7030M04
TYPICAL CHARACTERISTICS (T = +25°C, unless otherwise specified)
A
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
100
250
f = 1 MHz
Mounted on Glass Eploxy PWB
90
(1.08 cm2 × 1.0 mm (t) )
200
80
70
60
150
125
50
40
30
20
100
50
0
10
0
0
1
2
3
4
5
0
25
50
75
100
125
(°C)
150
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
15
10
5
100
10
V
CE = 2.0 V
μ
40
36
32
28
A
μ
A
1
μ
A
A
μ
μ
24
20
A
0.1
μ
A
μ
16 A
0.01
0.001
0.0001
μ
μ
A
12
8
A
μ
= 4 A
I
B
0
0.4
0.6
0.8
1.0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
VCE = 2.0 V
100
10
0.1
1
10
(mA)
100
Collector Current I
C
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 3 of 9
NESG7030M04
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
CE = 1 V
V
CE = 2 V
f = 2 GHz
f = 2 GHz
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
CE = 1 V
V
CE = 3 V
I = 5 mA
C
f = 2 GHz
MAG
MSG
MSG
2
|S21e
|
0
0
0.1
1
10
100
1
10
Collector Current I
100
Frequency f (GHz)
C
(mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
CE = 2 V
VCE = 3 V
I
C
= 5 mA
I = 5 mA
C
MAG
MAG
MSG
MSG
MSG
MSG
2
2
|S21e
|
|S21e|
0
0
0.1
1
10
100
0.1
1
10
100
Frequency f (GHz)
Frequency f (GHz)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 4 of 9
NESG7030M04
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
CE = 2 V
V
CE = 1 V
I
C
= 15 mA
I = 15 mA
C
MSG
MAG
MSG
MSG
MAG
MSG
2
2
|S21e
|
|S21e
|
MAG
0
0
0.1
1
10
100
0.1
1
10
100
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
V
CE = 3 V
I
C
= 15 mA
MAG
MSG
MSG
2
|S21e
|
0
0.1
1
10
100
Frequency f (GHz)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 5 of 9
NESG7030M04
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
25
20
15
10
5
30
25
20
15
10
5
MSG
MAG
MAG
|S21e|
|S21e|2
VCE = 1 V,
f = 5.8 GHz
VCE = 1 V,
f = 2 GHz
0
0
1
10
100
1
10
Collector Current IC (mA)
100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
25
20
15
10
5
MSG MAG
MAG
|S21e|2
|S21e|2
VCE = 2 V,
f = 5.8 GHz
VCE = 2 V,
f = 2 GHz
0
0
1
10
100
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
25
20
15
10
5
MAG
MSG
MSG
MAG
|S21e|2
|S21e|2
VCE = 3 V,
f = 5.8 GHz
VCE = 3 V,
f = 2 GHz
0
0
1
10
Collector Current IC (mA)
100
1
10
Collector Current IC (mA)
100
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 6 of 9
NESG7030M04
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
30
25
20
15
10
5
18
15
12
9
3
2
1
0
3
2
1
0
V
CE = 2 V, f = 2 GHz,
VCE = 2 V, f = 5.8 GHz,
ZS
= ZSopt, Z
L
= ZLopt
ZS
= ZSopt, Z = ZLopt
L
G
a
G
a
6
NF
NF
3
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
15
10
5
15
10
5
50
50
V
CE = 2 V,
V
CE = 2 V,
IC (set) = 10 mA,
IC (set) = 10 mA,
f = 5.8 GHz
f = 2 GHz
40
30
20
10
0
40
30
20
10
0
P
out
P
out
0
0
–5
–5
I
C
I
C
–10
–35
–10
–20
–30
–15
–25
Input Power Pin (dBm)
–20
–15
–10
–5
–0
–10
5
Input Power Pin (dBm)
Remark The graph indicates nominal characteristics.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 7 of 9
NESG7030M04
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to
microwave circuit simulators without keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/download/parameter/
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 8 of 9
NESG7030M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04 PKG) (UNIT: mm)
2.05 0.1
(Bottom View)
1.25 0.1
(1.05)
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
Page 9 of 9
Revision History
NESG7030M04 Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Apr 18, 2012
−
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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