NE68719-A [RENESAS]
TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SOT-23VAR;
| 型号： | NE68719-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SOT-23VAR |
| 文件： | 总7页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON RF TRANSISTOR
NE68719
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR LOW-NOISE MICROWAVE AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
•
Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
3-pin ultra super minimold package
•
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE68719-A
50 pcs (Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
NE68719-T1-A
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
5
3
V
2
V
30
90
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
Tj
150
Tstg
−65 to +150
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
The mark shows major revised points.
©
NEC Compound Semiconductor Devices 1994,
NE68719
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
–
–
–
–
–
100
100
140
nA
nA
–
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 20 mA
Note 1
hFE
70
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
fT
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
9
7
11
9
–
–
GHz
GHz
dB
⏐S21e⏐2 VCE = 2 V, IC = 20 mA, f = 2 GHz
⏐S21e⏐2 VCE = 1 V, IC = 10 mA, f = 2 GHz
8.5
6.0
–
10
7.5
1.3
1.3
0.4
–
–
dB
NF
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
VCB = 2 V, IE = 0 mA, f = 1 MHz
2.0
2.0
0.8
dB
Noise Figure (2)
–
dB
Note 2
Reverse Transfer Capacitance
Cre
–
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
86
Marking
hFE Value
70 to 140
2
Data Sheet PU10213EJ01V0DS
NE68719
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.8
250
200
150
f = 1 MHz
Free Air
0.6
0.4
0.2
100
90
50
0
25
50
75
100
125
(˚C)
150
0
2
4
6
8
10
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
50
40
30
20
10
25
20
15
10
5
V
CE = 2 V
200
180
160
140
120
100
80
μ
μ
μ
μ
μ
μ
μ
μ
A
A
A
A
A
A
A
A
60
40
μ
A
I
B
= 20
μ
A
0
0.5
1.0
0
1
2
3
4
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
500
f = 2 GHz
15
10
5
V
CE = 2 V
200
100
50
V
CE = 2 V
1 V
1 V
20
10
1
2
5
10
20
(mA)
50
100
0.7
1
2
3
5
7
10
(mA)
20 30
Collector Current I
C
Collector Current I
C
3
Data Sheet PU10213EJ01V0DS
NE68719
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
3
2
f = 2 GHz
f = 2 GHz
V
CE = 2 V
10
5
1 V
V
CE = 1 V
2 V
1
0
0.7
1
2
3
5
7
10
(mA)
20 30
0.5
1
2
3
5
7
10
20 30
Collector Current I
C
Collector Current I
C
(mA)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10213EJ01V0DS
NE68719
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (UNIT: mm)
1.6±0.1
0.8±0.1
2
1
3
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
5
Data Sheet PU10213EJ01V0DS
NE68719
•
The information in this document is current as of January, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
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redundancy, fire-containment, and anti-failure features.
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"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4-0110
6
Data Sheet PU10213EJ01V0DS
NE68719
Business issue
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Technical issue
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http://www.csd-nec.com/
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E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918
0209
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