NE202930-T1 [RENESAS]
Silicon NPN Epitaxial High Frequency Transistor; NPN硅外延高频三极管
| 型号： | NE202930-T1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial High Frequency Transistor |
| 文件： | 总8页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PreliminaryData Sheet
NE202930
Silicon NPN Epitaxial High Frequency Transistor
R09DS0003EJ0100
Rev.1.00
Jul 14, 2010
FEATURES
•
•
•
•
High transition frequency fT = 11 GHz TYP.
Ideal for low noise and low distortion amplification
Suitable for equipments of low collector voltage (Less than 5 V)
Suitable for up to 1 GHz applications
APPLICATIONS
•
LNA (Low Noise Amplifier) or power splitter for digital-TV
OUTLINE
RENESAS Package code: 30
(Package name: 3-pin super minimold (30 PKG))
1. Emitter
2. Base
3. Collector
Note: Marking is "R7D"
ORDERING INFORMATION
Part Number
Order Number
Package
3-pin super
minimold (30 PKG)
(Pb-Free)
Marking
Supplying Form
NE202930-T1
NE202930-T1-A
R7D
•
•
•
Embossed tape 8 mm wide
Pin 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE202930
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Symbol
VCBO
Ratings
Unit
Collector to Base Voltage
9
9
V
V
Collector to Emitter Voltage
(Base Short)
VCES
Collector to Emitter Voltage
(Base Open)
VCEO
6
V
Emitter to Base Voltage
Collector Current
Total Power Dissipation Note
Junction Temperature
Storage Temperature
Note: Free air
VEBO
IC
2
V
100
150
150
mA
mW
°C
Ptot
Tj
Tstg
−65 to +150
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 1 of 6
NE202930
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
VCB = 5 V, IE = 0
−
−
−
−
100
100
205
nA
nA
−
IEBO
VEB = 1 V, IC = 0
Note1
hFE
VCE = 5 V, IC = 5 mA
85
140
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
fT
VCE = 5 V, IC = 30 mA, f = 1 GHz
VCE = 5 V, IC = 30 mA, f = 1 GHz
−
11.5
−
11.0
13.5
1.15
−
−
GHz
dB
2
⏐S21e
⏐
NF1
NF2
Ga1
Ga2
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
1.5
dB
Noise Figure (2)
−
10.0
−
1.5
−
−
−
dB
dB
dB
Associated Gain (1)
Associated Gain (2)
VCE = 5 V, IC = 5 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
VCE = 5 V, IC = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
12.0
13.5
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 5 V, IE = 0, f = 1 MHz
−
13.5
−
0.6
15.5
19
0.8
−
−
pF
dB
MSGNote 3 VCE = 5 V, IC = 30 mA, f = 1 GHz
Gain 1 dB Compression Output
Power
PO (1 dB) VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
dBm
Output 3rd Order Intercept Point
OIP3
VCE = 5 V, IC (set) = 30 mA, f = 1 GHz,
−
32
−
dBm
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
S21
3. MSG =
S12
hFE CLASSIFICATION
Rank
YFB
R7D
Marking
hFE Value
85 to 205
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 2 of 6
NE202930
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
200
150
100
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Free Air
0
25
50
75
100
125
(°C)
150
0
1
2
3
4
5
6
7
8
9
Collector to Base Voltage VCB (V)
Ambient Temperature T
A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
15
100
10
V
CE = 5 V
μ
100
90
80
70
60
A
1
0.1
μ
A
μ
A
10
5
μ
A
μ
A
μ
0.01
50 A
μ
A
40
μ
A
30
20
A
μ
0.001
μ
= 10 A
4
I
B
0
0.0001
0
1
2
3
5
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1 000
100
10
14
12
10
8
V
CE = 5 V,
V
CE = 5 V
f = 1 GHz
6
4
2
1
0
0.001
0.01
0.1
1
10
100
1
10
100
Collector Current I
C
(mA)
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 3 of 6
NE202930
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
18
25
20
15
10
5
MAG
MSG
V
CE = 5 V,
16
14
12
10
8
f = 1 GHz
MSG
MAG
2
|S21e
|
2
|S21e
|
6
4
V
CE = 5 V,
2
I
CE = 5 mA
0
0.1
0
1
10
Collector Current I (mA)
100
1
10
Frequency f (GHz)
C
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
1
0
15
13
11
9
5
4
3
2
1
0
15
13
11
9
V
CE = 5 V,
VCE = 5 V,
f = 1 GHz,
f = 1 GHz,
= Z = Zopt
Z
S
= Zopt, Z
L
= 50 Ω
Z
S
L
7
7
5
5
1
10
Collector Current I
100
1
10
Collector Current I
100
C
(mA)
C
(mA)
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
EACH OUTPUT POWER, IM
vs. EACH INPUT POWER
3
30
20
10
0
200
150
100
50
40
30
V
CE = 5 V,
I
CE (set) = 30 mA,
20
f = 1 GHz
10
P
out
P
out
0
GL
–10
–20
–30
–40
IM
3
–50
–60
–70
–80
V
CE = 5 V,
IC
I
CE (set) = 30 mA,
f = 1 GHz
10 20
–10
0
–20
–10
0
10
–20
Each Input Power Pin (each) (dBm)
20
–30
–10
0
30
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 4 of 6
NE202930
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 5 of 6
NE202930
PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (30 PKG) (UNIT: mm)
2.1 0.1
1.25 0.1
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 6 of 6
Revision History
NE202930 Data Sheet
Description
Summary
Rev.
1.00
Date
Page
Jul 14, 2010
−
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C - 1
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Colophon 1.0
相关型号：
NE202930-T1-YFB-A
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD PACKAGE-3
RENESAS
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