M5M29GB320WG [RENESAS]
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY; 33554432位( 4,194,304 - WORD 8 - BIT / 2097152 - WORD BY16 - BIT ) CMOS 3.3V -ONLY ,块擦除闪存型号: | M5M29GB320WG |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
文件: | 总3页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI LSIs
M5M29GB/T320WG
PRELIMINARY
Some parametric limits are subject to change.
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Notice : This is not a final specification.
DESCRIPTION
The MITSUBISHI Mobile FLASH M5M29GB/T320WG are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for
mobile and personal computing, and communication products. The M5M29GB/T320WG are fabricated by CMOS technology for the
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6 x 8 balls CSP(0.8mm ball
pitch) .
FEATURES
Boot Block
.................................
.................................
..............................
........................
........................
Organization
2,097,152 word x 16bit
4,194,304 word x 8 bit
VCC = 2.7 ~ 3.6V
M5M29GB320WG
M5M29GT320WG
Bottom Boot
Top Boot
Other Functions
Supply voltage ................................
Soft Ware Command Control
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
Status Register Read
Alternating Back Ground Program/Erase Operation
Between Bank(I) ,Bank(II),Bank(III) and Bank(IV)
..............................
Access time
80ns (Vcc=3.0~3.6V)
90ns (Vcc=2.7~3.6V)
Power Dissipation
Read
.................................
72 mW (Max. at 5MHz)
(After Automatic Power saving) .......... 0.33µW (typ.)
Program/Erase
Standby
.................................
.................................
.......................
126mW (Max.)
0.33µW (typ.)
0.33µW (typ.)
Package
Deep power down mode
Auto program for Bank(I) and Bank(II)
Program Time
Program Unit
8mm x 10mm CSP (Chip Scale Package)
6 x 8 balls, 0.8mm ball pitch
.................................
4ms (typ.)
.........................
.........................
(Byte Program)
(Page Program)
1word/1byte
128word/256byte
Auto program for Bank(III) and Bank(IV)
.................................
Program Time
Program Unit
4ms (typ.)
128word/256byte
.................................
APPLICATION
Code Strage
Digital Cellular Phone
Telecommunication
Mobile Computing Machine
PDA (Personal Digital Assistance)
Car Navigation System
Video Game Machine
Auto Erase
.................................
Erase time
40 ms (typ.)
Erase Unit
.....................
Bank(I) Boot Block
4Kword/8Kbyte x 2
4Kword/8Kbyte x 6
32Kword/64Kbyte x 7
32Kword/64Kbyte x 8
32Kword/64Kbyte x 24
32Kword/64Kbyte x 24
..............
Parameter Block
Main Block
......................
......................
Bank(II) Main Block
Bank(III) Main Block
Bank(IV) Main Block
......................
......................
.........................................
Program/Erase cycles
100Kcycles
PIN CONFIGURATION (TOP VIEW)
8.0mm
INDEX
A
B
C
D
E
F
RY/BY#
A3
A4
A7
WE#
A9
A8
A13
A17
WP#
RP#
A12
A2
A1
A0
A6
A5
A18
A20
NC
A19
DQ5
A10
A11
A14
A15
DQ0
DQ2
DQ7
A16
BYTE#
DQ10
CE#
DQ8
DQ12
DQ14
DQ15
/A-1
G
H
OE#
DQ9
DQ1
DQ11
DQ3
VCC
DQ4
DQ13
DQ6
GND
GND
Outline 48pin CSP (0.8mm ball pitch)
1
2
3
4
5
6
NC : NO CONNECTION
Rev.0.2_48a_bazz
1
MITSUBISHI LSIs
M5M29GB/T320WG
PRELIMINARY
Some parametric limits are subject to change.
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
Notice : This is not a final specification.
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consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii)prevention
against any malfunction or mishap.
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Rev.0.2_48a_bazz
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