M5M29GB320WG [RENESAS]

33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY; 33554432位( 4,194,304 - WORD 8 - BIT / 2097152 - WORD BY16 - BIT ) CMOS 3.3V -ONLY ,块擦除闪存
M5M29GB320WG
型号: M5M29GB320WG
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
33554432位( 4,194,304 - WORD 8 - BIT / 2097152 - WORD BY16 - BIT ) CMOS 3.3V -ONLY ,块擦除闪存

闪存
文件: 总3页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MITSUBISHI LSIs  
M5M29GB/T320WG  
PRELIMINARY  
Some parametric limits are subject to change.  
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)  
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY  
Notice : This is not a final specification.  
DESCRIPTION  
The MITSUBISHI Mobile FLASH M5M29GB/T320WG are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with  
alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in  
one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for  
mobile and personal computing, and communication products. The M5M29GB/T320WG are fabricated by CMOS technology for the  
peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6 x 8 balls CSP(0.8mm ball  
pitch) .  
FEATURES  
Boot Block  
.................................  
.................................  
..............................  
........................  
........................  
Organization  
2,097,152 word x 16bit  
4,194,304 word x 8 bit  
VCC = 2.7 ~ 3.6V  
M5M29GB320WG  
M5M29GT320WG  
Bottom Boot  
Top Boot  
Other Functions  
Supply voltage ................................  
Soft Ware Command Control  
Selective Block Lock  
Erase Suspend/Resume  
Program Suspend/Resume  
Status Register Read  
Alternating Back Ground Program/Erase Operation  
Between Bank(I) ,Bank(II),Bank(III) and Bank(IV)  
..............................  
Access time  
80ns (Vcc=3.0~3.6V)  
90ns (Vcc=2.7~3.6V)  
Power Dissipation  
Read  
.................................  
72 mW (Max. at 5MHz)  
(After Automatic Power saving) .......... 0.33µW (typ.)  
Program/Erase  
Standby  
.................................  
.................................  
.......................  
126mW (Max.)  
0.33µW (typ.)  
0.33µW (typ.)  
Package  
Deep power down mode  
Auto program for Bank(I) and Bank(II)  
Program Time  
Program Unit  
8mm x 10mm CSP (Chip Scale Package)  
6 x 8 balls, 0.8mm ball pitch  
.................................  
4ms (typ.)  
.........................  
.........................  
(Byte Program)  
(Page Program)  
1word/1byte  
128word/256byte  
Auto program for Bank(III) and Bank(IV)  
.................................  
Program Time  
Program Unit  
4ms (typ.)  
128word/256byte  
.................................  
APPLICATION  
Code Strage  
Digital Cellular Phone  
Telecommunication  
Mobile Computing Machine  
PDA (Personal Digital Assistance)  
Car Navigation System  
Video Game Machine  
Auto Erase  
.................................  
Erase time  
40 ms (typ.)  
Erase Unit  
.....................  
Bank(I) Boot Block  
4Kword/8Kbyte x 2  
4Kword/8Kbyte x 6  
32Kword/64Kbyte x 7  
32Kword/64Kbyte x 8  
32Kword/64Kbyte x 24  
32Kword/64Kbyte x 24  
..............  
Parameter Block  
Main Block  
......................  
......................  
Bank(II) Main Block  
Bank(III) Main Block  
Bank(IV) Main Block  
......................  
......................  
.........................................  
Program/Erase cycles  
100Kcycles  
PIN CONFIGURATION (TOP VIEW)  
8.0mm  
INDEX  
A
B
C
D
E
F
RY/BY#  
A3  
A4  
A7  
WE#  
A9  
A8  
A13  
A17  
WP#  
RP#  
A12  
A2  
A1  
A0  
A6  
A5  
A18  
A20  
NC  
A19  
DQ5  
A10  
A11  
A14  
A15  
DQ0  
DQ2  
DQ7  
A16  
BYTE#  
DQ10  
CE#  
DQ8  
DQ12  
DQ14  
DQ15  
/A-1  
G
H
OE#  
DQ9  
DQ1  
DQ11  
DQ3  
VCC  
DQ4  
DQ13  
DQ6  
GND  
GND  
Outline 48pin CSP (0.8mm ball pitch)  
1
2
3
4
5
6
NC : NO CONNECTION  
Rev.0.2_48a_bazz  
1
MITSUBISHI LSIs  
M5M29GB/T320WG  
PRELIMINARY  
Some parametric limits are subject to change.  
33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT)  
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY  
Notice : This is not a final specification.  
Keep safety first in your circuit designs!  
-Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them.Trouble with  
semiconductors may lead to personal injury, fire or property damage. Remember to give due  
consideration to safety when making your circuit designs, with appropriate measures such as (i)  
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii)prevention  
against any malfunction or mishap.  
Notes regarding these materials  
-These materials are intended as a reference to assist our customers in the selection of the Mitsubishi  
semiconductor product best suited to the customer's application;they do not convey any license under  
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third  
party.  
-Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any  
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms,  
or circuit application examples contained in these materials.  
-All information contained in these materials, including product data, diagrams, charts, programs and  
algorithms represents information on products at the time of publication of these materials, and are  
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or  
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation  
or an authorized Mitsubishi Semiconductor product distributor for the latest product information before  
purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi  
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these  
inaccuracies or errors.  
Please also pay attention to information published by Mitsubishi Electric Corporation by various means  
including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).  
-When using any or all of the information contained in these materials, including product data, diagrams  
charts, programs, and algorithms, please be sure to evaluate all information as a total system before  
making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation  
assumes no responsibility for any damage, liability or other loss resulting from the information contained  
herein.  
-Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or  
system that is used under circumstances in which human life is potentially at stake. Please contact  
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when  
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for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
-The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole  
or in part these materials.  
-If these products or technologies are subject to the Japanese export control restrictions, they must be  
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than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country  
of destination is prohibited.  
-Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product  
distributor for further details on these materials or the products contained therein.  
Copyright 2002 Mitsubishi Electric Corporation. All rights reserved.  
Rev.0.2_48a_bazz  

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