HZS3BLL [RENESAS]

Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise; 硅外延平面齐纳二极管的硬拐点低噪声
HZS3BLL
型号: HZS3BLL
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise
硅外延平面齐纳二极管的硬拐点低噪声

二极管 齐纳二极管
文件: 总5页 (文件大小:67K)
中文:  中文翻译
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HZS-LL Series  
Silicon Epitaxial Planar Zener Diode for  
Hard Knee Low Noise  
REJ03G0167-0200Z  
(Previous: ADE-208-122A)  
Rev.2.00  
Jan.06.2004  
Features  
Vz-Iz characteristics are semilogarithmic linear from IZ = 1nA to 1mA and have sharper breakdown  
knees in a low current region, and also lower VZ temperature coefficients .  
Low dynamic impedance and low noise in the low current region (approximately 1/10 lower than the  
current zeners).  
Suitable for 5mm-pitch high speed automatic insertion.  
Ordering Information  
Type No.  
Mark  
Package Code  
HZS-LL Series  
Type No.  
MHD  
Pin Arrangement  
2
A
2
1
Type No.  
Cathode band  
1. Cathode  
2. Anode  
Rev.2.00, Jan.06.2004, page 1 of 4  
HZS-LL Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Pd  
Value  
250  
Unit  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
175  
Tstg  
–55 to +175  
°C  
Electrical Characteristics  
(Ta = 25°C)  
VZ(V) *1  
IR(nA)  
ZZT()  
ZZK(k)*2  
VZ1(V) *3 VZ2(V) *3  
Type  
Grade Min Max IZ(mA) Max VR(V) Max IZT(mA) Typ IZK(µA) Max  
Max  
HZS2LL A  
1.6 2.0 0.5  
1.9 2.3  
100 0.5  
100 1.0  
100 2.0  
100 3.0  
350 0.5  
360 0.5  
370 0.5  
380 0.5  
(1.2) 50  
(1.2) 50  
(1.5) 50  
(1.5) 50  
0.5  
0.5  
0.5  
0.5  
0.6  
B
C
2.2 2.6  
HZS3LL A  
2.5 2.9 0.5  
2.8 3.2  
0.6  
0.6  
0.6  
B
C
3.1 3.5  
HZS4LL A  
3.4 3.8 0.5  
3.7 4.1  
B
C
4.0 4.4  
HZS5LL A  
4.3 4.7 0.5  
4.6 5.0  
B
C
4.9 5.3  
Notes: 1. Tested with DC.  
2. Reference only.  
3. VZ1 = VZ (IZ = 0.5 mA) – VZ1 (Iz = 0.05 mA)  
VZ2 = VZ1 (IZ = 0.05 mA) – VZ2 (Iz = 0.001 mA)  
4. Type No. is as follows; HZS2ALL, HZS2BLL, HZS5CLL.  
Rev.2.00, Jan.06.2004, page 2 of 4  
HZS-LL Series  
Main Characteristic  
10–2  
10–3  
10–4  
10–5  
10–6  
10–7  
10–8  
10–9  
10–10  
0.01  
0.02  
0.03  
0.04  
0.05  
0
0.5  
1.0  
1.5  
2.0  
%/°C  
mV/°C  
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
Zener Voltage VZ (V)  
Zener Voltage VZ (V)  
Fig.2 Temperature Coefficient vs. Zener voltage  
Fig.1 Zener current vs. Zener voltage  
250  
200  
150  
100  
50  
5mm  
2.5 mm  
3 mm  
Printed circuit board  
100  
Quality: paper phenol  
× 180 × 1.6t mm  
0
50  
100  
150  
200  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
Rev.2.00, Jan.06.2004, page 3 of 4  
HZS-LL Series  
Package Dimensions  
As of January, 2003  
Unit: mm  
26.0 Min  
26.0 Min  
2.4 Max  
Package Code  
JEDEC  
JEITA  
MHD  
Conforms  
Mass (reference value)  
0.084 g  
Rev.2.00, Jan.06.2004, page 4 of 4  
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
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