HZM3.3WA [RENESAS]
SILICON EPITAXIAL PLANAR ZENER DIODE FOR SURGE ABSORB; 硅外延平面齐纳二极管的浪涌吸收
| 型号： | HZM3.3WA |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | SILICON EPITAXIAL PLANAR ZENER DIODE FOR SURGE ABSORB |
| 文件： | 总8页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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circuit application examples contained in these materials.
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subject to change by Renesas Technology Corporation without notice due to product improvements or
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information contained herein.
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or system that is used under circumstances in which human life is potentially at stake. Please contact
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8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HZM3.3WA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-1458A (Z)
Rev.1
Nov. 2002
Features
•
•
HZM3.3WA has two devices, and can absorb surge.
MPAK Package is suitable for high density surface mounting.
Ordering Information
Type No.
Laser Mark
Package Code
HZM3.3WA
33A
MPAK
Pin Arrangement
3
1. Cathode
2. Cathode
3. Anode
2
1
(Top View)
HZM3.3WA
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Pd *1
Tj
Value
200
Unit
mW
°C
Power dissipation
Junction temperature
Storage temperature
150
Tstg
−55 to +150
°C
Note 1. Two device total, See Fig.2.
Electrical Characteristics *1
(Ta = 25°C)
Item
Symbol Min
Typ
—
Max
3.50
20
Unit
V
Test Condition
Zener voltage
Reverse current
Dynamic resistance
ESD-Capability *2
VZ
IR
3.10
—
IZ = 5 mA, 40 ms pulse
VR = 1.0 V
—
µA
Ω
rd
—
—
130
—
IZ = 5 mA
—
30
—
kV
C = 150 pF, R = 330 Ω, Both forward
and reverse direction 10 pulse
Notes: 1. Per one device.
2. Failure criterion ; IR > 20 µA at VR = 1.0 V.
Rev.1, Nov. 2002, page 2 of 2
HZM3.3WA
Main Characteristic
250
200
150
100
50
10
8
1.0mm
Cu Foil
Printed circuit board
×
×
25 62 1.6t mm
Material:
6
Glass Epoxy Resin+Cu Foil
4
2
0
0
0
1
2
3
4
0
50
Ambient Temperature Ta (˚C)
Fig.2 Power Dissipation vs. Ambient Temperature
100
150
200
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
104
103
PRSM
Ta = 25
°
C
t
nonrepetitive
102
10
1.0
10–5
10–4
10–3
10–2
10–1
1.0
Time t (s)
Fig.3 Surge Reverse Power Ratings
Rev.1, Nov. 2002, page 3 of 3
HZM3.3WA
104
103
102
10
1.0
10-2
10-1
1.0
10
102
103
Time t (s)
Fig.4 Transient Thermal Impedance
Rev.1, Nov. 2002, page 4 of 4
HZM3.3WA
Package Dimensions
As of July, 2002
Unit: mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.16
3–0.4
0 – 0.1
(0.95) (0.95)
1.9 0.ꢀ
+ 0.3
– 0.1
ꢀ.8
Hitachi Code
JEDEC
MPAK
—
JEITA
Mass (reference value)
Conforms
0.011 g
Rev.1, Nov. 2002, page 5 of 5
HZM3.3WA
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.1, Nov. 2002, page 6 of 6
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