HZM3.0NB2

更新时间:2024-09-18 02:20:05
品牌:RENESAS
描述:Silicon Epitaxial Planar Zener Diode for Stabilizer

HZM3.0NB2 概述

Silicon Epitaxial Planar Zener Diode for Stabilizer 硅外延平面齐纳二极管的稳定器 齐纳二极管

HZM3.0NB2 规格参数

生命周期:Obsolete包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.56Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:120 Ω
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:3.08 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
最大电压容差:4.07%工作测试电流:5 mA
Base Number Matches:1

HZM3.0NB2 数据手册

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HZM-N Series  
Silicon Epitaxial Planar Zener Diode for Stabilizer  
REJ03G0483-0500  
(Previous: ADE-208-130D)  
Rev.5.00  
Dec 14, 2004  
Features  
Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.  
MPAK Package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
HZM-N Series  
Laser Mark  
Let to Mark Code  
Package Code  
MPAK  
Pin Arrangement  
3
1. NC  
2. Anode  
3. Cathode  
1
2
(Top View)  
Rev.5.00, Dec.14.2004, page 1 of 7  
HZM-N Series  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Power dissipation  
Junction temperature  
Storage temperature  
Note: 1. See Fig. 3.  
Symbol  
Value  
200  
150  
Unit  
mW  
°C  
Pd *1  
Tj  
Tstg  
55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Zener Voltage  
Reverse Current  
Dynamic Resistance  
Test  
Test  
Test  
VZ (V)*1  
Condition  
IR (µA)  
Max  
120  
Condition  
rd ()  
Max  
100  
100  
100  
Condition  
Type  
Grade  
B
B
B
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
Min  
1.90  
2.10  
2.30  
2.50  
2.50  
2.65  
2.80  
2.80  
2.95  
3.10  
3.10  
3.25  
3.40  
3.40  
3.55  
3.70  
3.70  
3.87  
4.01  
4.01  
4.15  
4.28  
4.42  
4.42  
4.55  
4.69  
4.84  
4.84  
4.98  
5.14  
5.31  
5.31  
5.49  
5.67  
Max  
2.20  
2.40  
2.60  
2.90  
2.75  
2.90  
3.20  
3.05  
3.20  
3.50  
3.35  
3.50  
3.80  
3.65  
3.80  
4.10  
3.97  
4.10  
4.48  
4.21  
4.34  
4.48  
4.90  
4.61  
4.75  
4.90  
5.37  
5.04  
5.20  
5.37  
5.92  
5.55  
5.73  
5.92  
IZ (mA)  
VR (V)  
0.5  
IZ (mA)  
HZM2.0N  
HZM2.2N  
HZM2.4N  
HZM2.7N  
5
5
5
5
5
5
5
5
120  
0.7  
120  
1.0  
120  
1.0  
110  
HZM3.0N  
HZM3.3N  
HZM3.6N  
HZM3.9N  
HZM4.3N  
5
5
5
5
5
50  
20  
10  
10  
10  
1.0  
1.0  
1.0  
1.0  
1.0  
120  
130  
130  
130  
130  
5
5
5
5
5
HZM4.7N  
HZM5.1N  
HZM5.6N  
5
5
5
10  
5
1.0  
1.5  
2.5  
130  
130  
80  
5
5
5
5
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.5.00, Decl.14.2004, page 2 of 7  
HZM-N Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition  
IZ (mA)  
5
IR (µA)  
Condition  
rd ()  
Max  
50  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
5.86  
5.86  
6.06  
6.26  
6.47  
6.47  
6.65  
6.86  
7.06  
7.06  
7.28  
7.52  
7.76  
7.76  
8.02  
8.28  
8.56  
8.56  
8.85  
9.15  
9.45  
9.45  
9.77  
10.11  
10.44  
10.44  
10.76  
11.10  
11.42  
11.42  
11.74  
12.08  
12.47  
12.47  
12.91  
13.37  
13.84  
13.84  
14.34  
14.85  
15.37  
15.37  
15.85  
16.35  
16.94  
16.94  
17.56  
18.21  
Max  
6.53  
6.12  
6.33  
6.53  
7.14  
6.73  
6.93  
7.14  
7.84  
7.36  
7.60  
7.84  
8.64  
8.10  
8.36  
8.64  
9.55  
8.93  
9.23  
9.55  
Max  
2
VR (V)  
3.0  
HZM6.2N  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
HZM6.8N  
HZM7.5N  
HZM8.2N  
HZM9.1N  
HZM10N  
HZM11N  
HZM12N  
HZM13N  
5M15N  
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
3.5  
4.0  
30  
30  
30  
30  
30  
30  
35  
35  
40  
40  
45  
5
5
5
5
5
5
5
5
5
5
5
5.0  
6.0  
10.55  
9.87  
7.0  
10.21  
10.55  
11.56  
10.88  
11.22  
11.56  
12.60  
11.90  
12.24  
12.60  
13.96  
13.03  
13.49  
13.96  
15.52  
14.46  
14.98  
15.52  
17.09  
16.01  
16.51  
17.09  
19.03  
17.70  
18.35  
19.03  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
B1  
B2  
B3  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
HZM16N  
HZM18N  
B1  
B2  
B3  
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.5.00, Decl.14.2004, page 3 of 7  
HZM-N Series  
Zener Voltage  
Reverse Current  
Test  
Dynamic Resistance  
Test  
Test  
VZ (V)*1  
Condition  
IZ (mA)  
5
IR (µA)  
Condition  
rd ()  
Max  
50  
Condition  
IZ (mA)  
5
Type  
Grade  
Min  
Max  
Max  
2
VR (V)  
15.0  
HZM20  
B
B1  
B2  
B3  
B
B1  
B2  
B3  
B
18.86  
18.86  
19.52  
20.21  
20.88  
20.88  
21.54  
22.23  
22.93  
22.93  
23.72  
24.54  
25.10  
28.00  
31.00  
34.00  
21.08  
19.70  
20.39  
21.08  
23.17  
21.77  
22.47  
23.17  
25.57  
23.96  
24.78  
25.57  
28.90  
32.00  
35.00  
38.00  
HZM22N  
HZM24N  
5
5
2
2
17.0  
19.0  
55  
60  
5
5
B1  
B2  
B3  
B
B
B
HZM27N  
HZM30N  
HZM33N  
HZM36N  
2
2
2
2
2
2
2
2
21.0  
23.0  
25.0  
27.0  
70  
80  
80  
90  
2
2
2
2
B
Note: 1. Tested with pulse (PW = 40 ms)  
Rev.5.00, Decl.14.2004, page 4 of 7  
HZM-N Series  
Mark Code  
Type  
Grade  
Mark No.  
2 0 –  
2 2 –  
2 4 –  
2 7 1  
2 7 2  
3 0 1  
3 0 2  
3 3 1  
3 3 2  
3 6 1  
3 6 2  
3 9 1  
3 9 2  
4 3 1  
4 3 2  
4 3 3  
4 7 1  
4 7 2  
4 7 3  
5 1 1  
5 1 2  
5 1 3  
5 6 1  
5 6 2  
5 6 3  
Type  
HZM6.2N  
Grade  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
Mark No.  
6 2 1  
6 2 2  
6 2 3  
6 8 1  
6 8 2  
6 8 3  
7 5 1  
7 5 2  
7 5 3  
8 2 1  
8 2 2  
8 2 3  
9 1 1  
9 1 2  
9 1 3  
1 0 1  
1 0 2  
1 0 3  
1 1 1  
1 1 2  
1 1 3  
1 2 1  
1 2 2  
1 2 3  
Type  
HZM13N  
Grade  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B
Mark No.  
1 3 1  
1 3 2  
1 3 3  
1 5 1  
1 5 2  
1 5 3  
1 6 1  
1 6 2  
1 6 3  
1 8 1  
1 8 2  
1 8 3  
2 0 1  
2 0 2  
2 0 3  
2 2 1  
2 2 2  
2 2 3  
2 4 1  
2 4 2  
2 4 3  
2 7 –  
3 0 –  
3 3 –  
3 6 –  
HZM2.0N  
HZM2.2N  
HZM2.4N  
HZM2.7N  
B
B
B
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
B1  
B2  
B3  
HZM6.8N  
HZM7.5N  
HZM8.2N  
HZM9.1N  
HZM10N  
HZM11N  
HZM12N  
HZM15N  
HZM16N  
HZM18N  
HZM20N  
HZM22N  
HZM24N  
HZM3.0N  
HZM3.3N  
HZM3.6N  
HZM3.9N  
HZM4.3N  
HZM4.7N  
HZM5.1N  
HZM5.6N  
HZM27N  
HZM30N  
HZM33N  
HZM36N  
B
B
B
Example of Marking  
1. One grade type (grade type B)  
Underline  
20 -  
30 -  
-
HZM2.0NB  
HZM30NB  
2. Two grade type (B1, B2)  
301  
302  
HZM3.0NB1  
HZM3.0NB2  
3. Three grade type (B1, B2, B3)  
433  
431  
432  
HZM4.3NB1  
HZM4.3NB3  
HZM4.3NB2  
Notes: 1. The grade B type includes from B1 min. to B3 (or B2) max.  
B grade is standard and has better delivery, These are marked one of B1, B2, B3.  
Ordering P/N HZM-N series are delivered taped (TL/TR).  
Choose one taping code and adhere to parts No.  
Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR).  
(Grade B type)  
2.  
3.  
HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR), HZM24NB3TL (or TR).  
(Grade B1, B2, B3 type)  
Rev.5.00, Decl.14.2004, page 5 of 7  
HZM-N Series  
Main Characteristic  
10  
8
6
4
2
0
0
4
8
12  
16  
20  
24  
28  
32  
36  
40  
Zener Voltage VZ (V)  
Fig.1 Zener current vs. Zener voltage  
0.10  
0.09  
0.08  
250  
1.0mm  
45  
40  
%/°C  
0.07  
0.06  
0.05  
0.04  
0.03  
35  
200  
Cu Foil  
30  
25  
20  
15  
10  
5
Printed circuit board  
×
×
25 62 1.6t mm  
Material:  
Glass Epoxy Resin+Cu Foil  
mV/°C  
150  
0.02  
0.01  
0
0
–5  
100  
–0.01  
–0.02  
–0.03  
–0.04  
–0.05  
–0.06  
–0.07  
–10  
–15  
–20  
50  
–25  
–30  
0
0
5
10 15 20 25 30 35 40 45  
0
50  
Ambient Temperature Ta (°C)  
Fig.3 Power Dissipation vs. Ambient Temperature  
100  
150  
200  
Zener Voltage VZ (V)  
Fig.2 Temperature Coefficient vs. Zener voltage  
Rev.5.00, Decl.14.2004, page 6 of 7  
HZM-N Series  
Package Dimensions  
As of January, 2003  
Unit: mm  
+ 0.10  
– 0.06  
+ 0.10  
– 0.05  
0.16  
3–0.4  
0 – 0.1  
(0.95) (0.95)  
1.9 ± 0.2  
+ 0.3  
– 0.1  
2.8  
Package Code  
JEDEC  
MPAK  
JEITA  
Mass (reference value)  
Conforms  
0.011 g  
Rev.5.00, Decl.14.2004, page 7 of 7  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
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2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
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