HVD144A

更新时间:2024-09-18 01:41:14
品牌:RENESAS
描述:Silicon Epitaxial Trench Pin Diode for Antenna Switching

HVD144A 概述

Silicon Epitaxial Trench Pin Diode for Antenna Switching 硅外延海沟PIN二极管的天线切换 PIN 二极管

HVD144A 规格参数

生命周期:Obsolete包装说明:SFP-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.26Is Samacsys:N
应用:SWITCHING配置:SINGLE
最大二极管电容:0.43 pF二极管元件材料:SILICON
最大二极管正向电阻:1.8 Ω二极管电阻测试电流:2 mA
二极管电阻测试频率:100 MHz二极管类型:PIN DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.15 W
认证状态:Not Qualified子类别:PIN Diodes
表面贴装:YES技术:POSITIVE-INTRINSIC-NEGATIVE
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

HVD144A 数据手册

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HVD144A  
Silicon Epitaxial Trench Pin Diode for Antenna Switching  
REJ03G0429-0100  
(Previous: ADE-208-1591)  
Rev.1.00  
Nov 26, 2004  
Features  
Adopting the trench structure improves low capacitance.(C = 0.43 pF max)  
Low forward resistance. (rf = 1.80 max)  
Low operation current.  
Super small Flat Lead Package (SFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
SFP  
HVD144A  
T7  
Pin Arrangement  
Cathode mark  
Mark  
1
2
T7  
1. Cathode  
2. Anode  
Rev.1.00 Nov 26, 2004 page 1 of 5  
HVD144A  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Ratings  
30  
Unit  
Reverse voltage  
VR  
IF  
V
Forward current  
100  
mA  
mW  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
150  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
Max  
100  
0.90  
0.43  
1.80  
Unit  
Test Condition  
Reverse current  
Forward voltage  
Capacitance  
IR  
VF  
C
nA  
V
VR = 30 V  
IF = 2 mA  
pF  
VR = 1 V, f = 1 MHz  
Forward resistance  
ESD-Capability *1  
rf  
IF = 2 mA, f = 100 MHz  
100  
V
C = 200 pF, R = 0 , Both forward and  
reverse direction 1 pulse.  
Notes: 1. Failure criterion ; IR > 100 nA at VR = 30 V  
2. Please do not use the soldering iron due to avoid high stress to the SFP package.  
Rev.1.00 Nov 26, 2004 page 2 of 5  
HVD144A  
Main Characteristic  
10-2  
10-8  
10-9  
10-10  
10-11  
10-4  
10-6  
10-8  
Ta = 75°C  
Ta = 50°C  
Ta = 75°C  
Ta = 50°C  
Ta = 25°C  
Ta = 25°C  
10-12  
10-13  
10-10  
10-12  
10-14  
0
0.2  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
0.4  
0.6  
0.8  
1.0  
0
10  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
20  
30  
40  
50  
f = 1MHz  
f = 100MHz  
101  
10  
100  
1.0  
0.1  
10-1  
10-4  
10-3  
Forward current IF (A)  
Fig.4 Forward resistance vs. Forward current  
10-2  
10-1  
0.1  
1.0  
10  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.1.00 Nov 26, 2004 page 3 of 5  
HVD144A  
106  
105  
104  
103  
102  
101  
100  
10-1  
f=100MHz  
0
0.2  
Forward voltage VF (V)  
Fig.5 Forward resistance (parallel) vs. Forward voltage  
0.4  
0.6  
0.8  
Rev.1.00 Nov 26, 2004 page 4 of 5  
HVD144A  
Package Dimensions  
As of January, 2003  
Unit: mm  
1.0 ± 0.10  
1.4 ± 0.10  
Package Code  
JEDEC  
SFP  
JEITA  
Mass (reference value)  
0.0010 g  
Rev.1.00 Nov 26, 2004 page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
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publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
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is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
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use.  
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cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
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http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
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© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .2.0  

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