HD74HC125 [RENESAS]
Quad. Bus Buffer Gates (with 3-state outputs); 四。总线缓冲器·盖茨（ 3态输出）
| 型号： | HD74HC125 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Quad. Bus Buffer Gates (with 3-state outputs) |
| 文件： | 总9页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HD74HC125/HD74HC126
Quad. Bus Buffer Gates (with 3-state outputs)
REJ03D0565-0200
(Previous ADE-205-439)
Rev.2.00
Oct 11, 2005
Description
The HD74HC125, HD74HC126 require the 3-state control input C to be taken high to put the output into the high
impedance condition, whereas the HD74HC125, HD74HC126 requires the control input to be low to put the output into
high impedance.
Features
•
•
•
•
•
•
High Speed Operation: tpd = 8 ns typ (CL = 50 pF)
High Output Current: Fanout of 15 LSTTL Loads
Wide Operating Voltage: VCC = 2 to 6 V
Low Input Current: 1 µA max
Low Quiescent Supply Current: ICC (static) = 4 µA max (Ta = 25°C)
Ordering Information
Package Code
(Previous Code)
Package
Abbreviation
Taping Abbreviation
(Quantity)
Part Name
Package Type
DILP-14 pin
SOP-14 pin (JEITA)
HD74HC125P
PRDP0014AB-B
(DP-14AV)
P
—
HD74HC126P
HD74HC125FPEL
HD74HC125FPEL
PRSP0014DF-B
(FP-14DAV)
FP
RP
T
EL (2,000 pcs/reel)
EL (2,500 pcs/reel)
ELL (2,000 pcs/reel)
PRSP0014DE-A
(FP-14DNV)
HD74HC126RPEL SOP-14 pin (JEDEC)
HD74HC125TELL
TSSOP-14 pin
PTSP0014JA-B
(TTP-14DV)
HD74HC126TELL
Note: Please consult the sales office for the above package availability.
Function Table
Inputs
Output
Y
C
A
HC125
HC126
HC125
HC126
H
L
H
H
X
L
Z
L
Z
L
L
L
H
H
H
H :
L :
X :
Z :
High level
Low level
Irrelevant
Off (high-impedance) state of a 3-state output.
Rev.2.00, Oct 11, 2005 page 1 of 8
HD74HC125/HD74HC126
Pin Arrangement
•
HD74HC125
1C
1A
1
2
3
4
5
6
7
14 VCC
13 4C
12 4A
11 4Y
10 3C
1Y
2C
2A
2Y
9
8
3A
3Y
GND
(Top view)
•
HD74HC126
1C
1A
1
2
3
4
5
6
7
14 VCC
13 4C
12 4A
11 4Y
10 3C
1Y
2C
2A
2Y
9
8
3A
3Y
GND
(Top view)
Rev.2.00, Oct 11, 2005 page 2 of 8
HD74HC125/HD74HC126
Absolute Maximum Ratings
Item
Supply voltage range
Input voltage
Symbol
VCC
Rating
–0.5 to +7.0
–0.5 to VCC + 0.5
–0.5 to VCC + 0.5
±35
Unit
V
VIN
V
Output voltage
VOUT
IOUT
ICC, IGND
IIK
V
Output current
mA
mA
mA
mA
mW
°C
DC current drain per VCC, GND
DC input diode current
DC output diode current
Power dissipation per package
Storage temperature
±75
±20
IOK
±20
PT
500
Tstg
–65 to +150
Note: The absolute maximum ratings are values, which must not individually be exceeded, and furthermore, no two of
which may be realized at the same time.
Recommended Operating Conditions
Item
Supply voltage
Symbol
VCC
Ratings
2 to 6
Unit
V
Conditions
Input / Output voltage
Operating temperature
VIN, VOUT
Ta
0 to VCC
–40 to 85
0 to 1000
0 to 500
0 to 400
V
°C
VCC = 2.0 V
VCC = 4.5 V
Input rise / fall time*1
tr, tf
ns
VCC = 6.0 V
Note: 1. This item guarantees maximum limit when one input switches.
Waveform: Refer to test circuit of switching characteristics.
Electrical Characteristics
Ta = 25°C
Typ Max
Ta = –40 to+85°C
Item
Symbol VCC (V)
VIH
Unit
Test Conditions
Min
1.5
3.15
4.2
—
Min
1.5
3.15
4.2
—
Max
—
Input voltage
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
—
—
—
—
V
V
V
—
—
—
—
VIL
—
0.5
1.35
1.8
—
0.5
1.35
1.8
—
—
—
—
—
—
—
Output voltage
VOH
1.9
4.4
5.9
4.18
5.68
—
2.0
4.5
6.0
—
1.9
4.4
5.9
4.13
5.63
—
Vin = VIH or VIL IOH = –20 µA
—
—
—
—
—
—
IOH = –6 mA
—
—
—
IOH = –7.8 mA
VOL
0.0
0.0
0.0
—
0.1
0.1
0.1
0.26
0.26
±0.5
0.1
0.1
0.1
0.33
0.33
±5.0
V
Vin = VIH or VIL IOL = 20 µA
—
—
—
—
—
—
IOL = 6 mA
—
—
—
IOL = 7.8 mA
Off-state output
current
IOZ
—
—
—
µA Vin = VIH or VIL,
Vout = VCC or GND
Input current
Iin
6.0
6.0
—
—
—
—
±0.1
—
—
±1.0
µA Vin = VCC or GND
µA Vin = VCC or GND, Iout = 0 µA
Quiescent supply
current
ICC
4.0
40
Rev.2.00, Oct 11, 2005 page 3 of 8
HD74HC125/HD74HC126
Switching Characteristics (CL = 50 pF, Input tr = tf = 6 ns)
Ta = 25°C
Typ Max
Ta = –40 to +85°C
Item
Symbol VCC (V)
Unit
Test Conditions
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
125
25
Propagation delay tPLH, tPHL
time
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
—
—
8
100
20
ns
—
—
9
17
21
Output enable
Time
tZH, tZL
tHZ, tLZ
tTLH, tTHL
Cin
150
30
190
38
ns
ns
ns
pF
—
—
14
—
—
4
26
33
Output disable
Time
150
30
190
38
26
33
Output rise/fall
time
60
75
12
15
—
5
10
13
Input capacitance
10
10
Test Circuit
VCC
VCC
Input
C
Output
1 kΩ
Pulse generator
S1
OPEN
*1 See under table
GND
Y
A
ZOUT = 50 Ω
CL= 50 pF
TEST
S1
OPEN
GND
VCC
tPLH/tPHL
tZH/tHZ
tZL /tLZ
Note: CL includes the probe and jig capacitance.
Rev.2.00, Oct 11, 2005 page 4 of 8
HD74HC125/HD74HC126
Waveforms
•
HD74HC125
•
Waveform – 1
tr
tf
VCC
0 V
90 %
50 %
90 %
50 %
Input A
10 %
10 %
tPHL
tPLH
VOH
Output Y
50 %
50 %
VOL
•
Waveform – 2
Input C
tf
tr
VCC
90 %
50 %
90 %
50 %
10 %
tZL
10 %
0 V
tLZ
VOH
50 %
tZH
Waveform - A
Waveform - B
10 %
VOL
VOH
tHZ
90 %
50 %
VOL
Notes : 1. tr ≤ 6 ns, tf ≤ 6 ns
2. Input waveform : PRR ≤ 1 MHz, duty cycle 50%
3. Waveform– A is for an output with internal conditions such that the
output is low except when disabled by the output control.
4. Waveform– B is for an output with internal conditions such that the
output is high except when disabled by the output control.
Rev.2.00, Oct 11, 2005 page 5 of 8
HD74HC125/HD74HC126
Waveforms
•
HD74HC126
•
Waveform – 1
tr
tf
VCC
0 V
90 %
50 %
90 %
50 %
Input A
10 %
10 %
tPHL
tPLH
VOH
Output Y
50 %
50 %
VOL
•
Waveform – 2
Input C
tr
tf
VCC
90 %
50 %
90 %
50 %
10 %
10 %
tLZ
0 V
tZL
VOH
50 %
tZH
Waveform - A
Waveform - B
10 %
VOL
VOH
tHZ
90 %
50 %
VOL
Notes : 1. tr ≤ 6 ns, tf ≤ 6 ns
2. Input waveform : PRR ≤ 1 MHz, duty cycle 50%
3. Waveform– A is for an output with internal conditions such that the
output is low except when disabled by the output control.
4. Waveform– B is for an output with internal conditions such that the
output is high except when disabled by the output control.
Rev.2.00, Oct 11, 2005 page 6 of 8
HD74HC125/HD74HC126
Package Dimensions
JEITA Package Code
P-DIP14-6.3x19.2-2.54
RENESAS Code
PRDP0014AB-B
Previous Code
DP-14AV
MASS[Typ.]
0.97g
D
14
8
1
7
b 3
Z
Dimension in Millimeters
Reference
Symbol
Min
Nom
7.62
19.2
6.3
Max
e 1
D
20.32
7.4
E
A
5.06
A 1
b p
b 3
c
0.51
0.40
0.48
1.30
0.25
0.56
b p
e
c
0.19
0.31
e1
θ
0
°
15°
e
2.29
2.54
2.54
2.79
2.39
Z
( Ni/Pd/Au plating )
L
JEITA Package Code
RENESAS Code
PRSP0014DE-A
Previous Code
FP-14DNV
MASS[Typ.]
0.13g
P-SOP14-3.95x8.65-1.27
NOTE)
*1
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
F
D
14
8
bp
Index mark
Dimension in Millimeters
Reference
Symbol
Min
Nom
8.65
3.95
Max
9.05
Terminal cross section
( Ni/Pd/Au plating )
D
E
A 2
A 1
A
0.10
0.34
0.15
0.14
0.40
0.20
0.25
1.75
0.46
1
7
*3
e
bp
Z
x
M
b p
b 1
c
L 1
0.25
c
1
θ
H E
e
0
°
8°
5.80
6.10
1.27
6.20
x
0.25
0.15
L
y
y
Z
0.635
1.27
Detail F
L
0.40
0.60
1.08
L
1
Rev.2.00, Oct 11, 2005 page 7 of 8
HD74HC125/HD74HC126
JEITA Package Code
RENESAS Code
PRSP0014DF-B
Previous Code
FP-14DAV
MASS[Typ.]
0.23g
P-SOP14-5.5x10.06-1.27
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
*1
D
F
14
8
bp
Index mark
Dimension in Millimeters
Reference
Symbol
Min
Nom
10.06
5.50
Max
10.5
Terminal cross section
( Ni/Pd/Au plating )
D
E
A 2
A 1
A
1
7
0.00
0.34
0.15
0.10
0.40
0.20
0.20
2.20
0.46
*3
e
bp
Z
x
M
L1
b p
b 1
c
0.25
c
1
θ
H E
e
0
°
8°
7.50
7.80
1.27
8.00
x
0.12
0.15
1.42
0.90
L
y
y
Z
Detail F
L
0.50
0.70
1.15
L
1
JEITA Package Code
RENESAS Code
PTSP0014JA-B
Previous Code
TTP-14DV
MASS[Typ.]
0.05g
P-TSSOP14-4.4x5-0.65
*1
D
NOTE)
F
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
14
8
b p
Dimension in Millimeters
Reference
Symbol
Min
Nom
5.00
4.40
Max
5.30
Index mark
Terminal cross section
( Ni/Pd/Au plating )
D
E
A 2
A 1
A
1
7
0.03
0.15
0.10
0.07
0.20
0.15
0.10
1.10
0.25
*3
bp
Z
x
M
L1
b p
b 1
c
e
0.20
c
1
θ
0
°
8°
H E
e
6.20
6.40
0.65
6.60
x
0.13
0.10
0.83
0.6
L
y
y
Z
Detail F
L
0.4
0.5
1.0
L
1
Rev.2.00, Oct 11, 2005 page 8 of 8
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
相关型号：
HD74HC125P-E
HC/UH SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDIP14, 6.30 X 19.20 MM, 2.54 MM PITCH, PLASTIC, DIP-14
RENESAS
©2020 ICPDF网 联系我们和版权申明