HAT2172H_15 [RENESAS]
Silicon N Channel Power MOS FET Power Switching;
| 型号： | HAT2172H_15 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel Power MOS FET Power Switching |
| 文件： | 总10页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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HAT2172H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0132-0500
Rev.5.00
Sep 20, 2005
Features
•
•
•
•
•
High speed switching
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 5.8 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
4
G
4
3
2
1
1, 2, 3 Source
4
5
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
40
±20
V
V
30
A
Note1
Drain peak current
ID(pulse)
IDR
120
A
Body-drain diode reverse drain current
Avalanche current
30
A
Note 2
IAP
20
A
Note 2
Avalanche energy
EAR
32
mJ
W
Channel dissipation
Pch Note3
θch-C
Tch
20
Channel to Case Thermal Resistance
Channel temperature
6.25
150
°C/W
°C
°C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.5.00 Sep 20, 2005 page 1 of 7
HAT2172H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
40
±20
—
—
1.5
—
—
27
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage
Gate to source leak current
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 40 V, VGS = 0
—
±10
1
µA
µA
V
Zero gate voltage drain current
Gate to source cutoff voltage
—
—
3.0
7.5
9.2
—
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 7 V Note4
ID = 15 A, VDS = 10 V Note4
Static drain to source on state
resistance
5.8
6.6
45
mΩ
mΩ
S
Forward transfer admittance
Input capacitance
Ciss
Coss
Crss
Rg
2420
480
150
0.5
32
—
pF
pF
pF
Ω
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Gate Resistance
—
—
—
Total gate charge
Qg
—
nC
nC
nC
ns
ns
ns
ns
V
VDD = 10 V, VGS = 10 V,
ID = 30 A
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td(on)
tr
9
—
4.0
12
—
—
VGS = 10 V, ID = 15 A,
VDD 10 V, RL = 0.67 Ω,
Rg = 4.7 Ω
20
—
Turn-off delay time
Fall time
td(off)
tf
38
—
4.5
0.84
32
—
Body–drain diode forward voltage
VDF
1.10
—
IF = 30 A, VGS = 0 Note4
Body–drain diode reverse recovery
time
trr
ns
IF = 30 A, VGS = 0
diF/ dt = 100 A/ µs
Notes: 4. Pulse test
Rev.5.00 Sep 20, 2005 page 2 of 7
HAT2172H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
40
30
20
10
500
100
PW = 10
10
1
Operation in
this area is
limited by RDS(on)
0.1
Ta = 25°C
1 shot Pulse
0.01
0
50
100
150
200
0.1
0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
50
40
30
20
10
Pulse Test
3.8 V
10 V
VDS = 10 V
Pulse Test
4.0 V
4.4 V
3.6 V
3.4 V
Tc = 75°C
25°C
V
GS = 3.0 V
8 10
Drain to Source Voltage VDS (V)
–25°C
0
0
10
2
4
6
8
2
4
6
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
100
50
200
Pulse Test
150
100
50
20
ID = 20 A
10
5
VGS = 7 V
10 V
10 A
5 A
2
1
Pulse Test
0
4
8
12
16
20
1
0.3
10
3
100 30 1000
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Sep 20, 2005 page 3 of 7
HAT2172H
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
100
20
Pulse Test
30
10
Tc = –25°C
75°C
15
5 A, 10 A
ID = 20 A
25°C
10
3
1
VGS = 7 V
5
5 A, 10 A, 20 A
10 V
0.3
0.1
VDS = 10 V
Pulse Test
0
–25
0.1 0.3
3
30
1
10
100
0
25
50 75 100 125 150
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
100
Ciss
3000
1000
300
50
Coss
Crss
100
20
10
30
10
di/dt = 100 A/µs
VGS = 0
VGS = 0, Ta = 25°C
f = 1 MHz
0.1 0.3
1
3
10 30
100
0
5
10
15
20
25
30
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Switching Characteristics
Dynamic Input Characteristics
ID = 30 A
1000
50
40
30
20
10
20
16
12
8
300
100
t
VGS
r
t
VDD = 25 V
VDS
d(off)
10 V
5 V
30
10
t
d(on)
t
f
4
0
VDD = 25 V
10 V
5 V
3
1
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.1 0.3
1
3
10
30
100
0
8
16
24
32
40
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.5.00 Sep 20, 2005 page 4 of 7
HAT2172H
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
50
40
30
20
IAP = 20 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
10 V
5 V
40
30
20
10
VGS = 0, –5 V
10
0
Pulse Test
1.2 1.6 2.0
0
0.4
0.8
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 6.25°C/ W, Tc = 25°C
PW
T
PDM
D =
0.03
0.01
PW
T
0.01
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
VDSS
1
2
2
L • IAP •
EAR
=
L
VDSS – VDD
VDS
Monitor
IAP
Monitor
V(BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
VDD
0
Rev.5.00 Sep 20, 2005 page 5 of 7
HAT2172H
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
Rg
D.U.T.
10%
10%
Vin
RL
Vout
10%
VDS
= 10 V
Vin
10 V
90%
90%
t
t
t
d(off)
t
f
d(on)
r
Rev.5.00 Sep 20, 2005 page 6 of 7
HAT2172H
Package Dimensions
JEITA Package Code
SC-100
RENESAS Code
PTZZ0005DA-A
Package Name
LFPAK
MASS[Typ.]
0.080g
Unit: mm
4.9
5.3 Max
0.25–+00..0035
3.3
4.0 0.2
5
0.20 +–00..0035
1
4
0° – 8°
0.75 Max
0.10
0.40 0.06
1.27
0.25
M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2172H-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Sep 20, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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