HA17904PSJ [RENESAS]
Dual Operational Amplifier; 双路运算放大器
| 型号： | HA17904PSJ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Dual Operational Amplifier |
| 文件： | 总8页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA17904 Series
Dual Operational Amplifier
REJ03D0688-0100
(Previous: ADE-204-046)
Rev.1.00
Jun 15, 2005
Description
HA17904 is dual operational amplifier which, provide internal phase compensation and high gain, and mono power
source operation is possible. It can be widely applied to control equipment and to general use.
Features
•
•
Wide range of operating supply voltage and mono power source operation is possible.
Wide range of common mode input voltage possible to operate with an input ard 0V, and output around 0V is
available.
•
Frequency characteristics and input bias currrent are temperature compen
Ordering Information
Type No.
HA17904PSJ
Application
Previous Code)
P-8B)
Car use
HA17904FPJ
(FP-8DGV)
E-B (FP-8DGV)
HA17904FPK
Rev.1.00 Jun 15, 2005 page 1 of 7
HA17904 Series
Pin Arrangement
Vout1
Vin(–)1
Vin(+)1
GND
1
2
3
4
8
7
6
5
VCC
1
– +
Vout2
Vin(–)2
Vin(+)2
2
+ –
(Top View)
Circuit Schematic (1/2)
Q
2
Q3
Vin(–)
Q
1
Q4
C
Vin(+)
Vout
Q
8
Q9
Rev.1.00 Jun 15, 2005 page 2 of 7
HA17904 Series
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
HA17904PSJ
32
Item
Symbol
HA17904FPJ
32
HA17904FPK
32
Unit
V
Supply voltage
VCC
IO sink
VCM
V IN(diff)
PT
Output sink current
50
50
50
mA
V
Common-mode input voltage
Common-mode differential voltage
Power dissipation
–0.3 to VCC
±VCC
–0.3 to VCC
±VCC
–0.3 to VCC
±VCC
V
570*1
385*2
385*2
mW
°C
°C
Operating temperature range
Storage temperature range
Topr
Tstg
–40 to +85
–55 to +125
–40 to +85
–55 to +125
–40 to +125
–55 to +150
Notes: 1. These are the allowable values up to Ta = 55 °C. Derate by 8.3mW/°C above that temperature.
2. These are the allowable values up to Ta = 45 °C mounting on 30% wiring density glass epoxy
board. Derate by 7.14mW/°C above that temeperature.
Electrical Characteristics 1
(VCC = +15V, Ta = 25°C)
est Conditions
Item
Input offset voltage
Input offset current
Symbol
VIO
Min
—
Typ
3
Max
= 50Ω, Rf = 50kΩ
IIO
—
5
IIO = | II (+) – II (–)
5V
|
Input bias current
IIB
—
30
Power source rejection ratio
Voltage gain
PSRR
AVD
—
1kΩ, Rf = 100kΩ
75
—
L = ∞, RS = 1kΩ, Rf = 100kΩ
RS = 50Ω, Rf = 5kΩ
Common mode rejection ratio
CMR
Common mode input voltage range VCM (+)
VCM (–)
RS = 1kΩ, Rf = 100kΩ
RS = 1kΩ, Rf = 100kΩ
V
Peak-to-peak output voltage
Vop-
V
f = 100Hz, RL = 20kΩ, RS = 1kΩ,
Rf = 100kΩ
Output source current
Output sink current
Output sink current
50
—
—
—
mA
mA
µA
VIN+ = 1V, VIN– = 0V, VOH = 10V
VIN– = 1V, VIN+ = 0V, VOL = 2.5V
VIN– = 1V, VIN+ = 0V,
Vout = 200mV
Supply current
Slew rate
—
—
0.8
0.2
2
mA
V/µs
dB
VIN = GND, RL = ∞
RL = ∞, VCM = 7.5V, f = 1.5kHz
f = 1kHz
—
—
Channel separation
120
Electrical Characterist
(VCC = +15V, Ta =–40 to +125°C)
Test Conditions
Item
Input offset voltage
Input offset current
Input bias current
Symbol
VIO
Min
—
—
—
0
Typ
—
Max
7
Unit
mV
nA
nA
V
VCM = 7.5V, RS = 50Ω, RL = 50kΩ
IIO
—
200
500
13.0
4
VCM = 7.5V, IIO = | II (+) – II (–)
VCM = 7.5V
|
IIB
—
Common mode input voltage range VCM
Supply current ICC
—
RS = 1kΩ, Rf = 100kΩ
VIN = GND, RL = ∞
—
—
mA
Note: As for the characteristic curve, refer to HA17904FPK.
Rev.1.00 Jun 15, 2005 page 3 of 7
HA17904 Series
Characteristic Curves
Input Bias Current vs.
Ambient
Temperature Characteristics
Input Bias Current vs.
Power-Supply
Voltage Characteristics
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
Ta = 25°C
Vin = 7.5 V
10
20
30
–55 –35 –15
5
25 45 65 85 105 125
Power-Supply Voltage VCC (V)
Ambimperature Ta (°C)
Output Sink Current vs.
vs.
Ambient Temperature Characteristics
racteristics
90
80
70
60
50
40
30
20
10
0
VCC = 15 V
VOH = 10 V
VCC = 15 V
VOH = 1 V
20
10
0
–55 –35 –1
–55 –35 –15
5
25 45 65 85 105 125
A
Ambient Temperature Ta (°C)
Rev.1.00 Jun 15, 2005 page 4 of 7
HA17904 Series
Voltage Gain vs.
Voltage Gain vs.
Frequency Characteristics
Power-Supply Voltage Characteristics
160
140
120
100
80
160
140
120
100
80
VCC = 15 V
Ta = 25°C
Ta = 25°C
60
60
40
40
20
20
0
1
0
10
100
1 k
10 k 100 k 1 M
10
20
30
Frequency f (Hz)
Power-Supply Voltage VCC (V)
nt vs.
aracteristics
Maximum Output Voltage Amplitude vs.
Frequency Characteristics
4
0
20
15
10
5
= 25°C
Vin = GND
0
1 k
10
20
30
10 k
Power-Supply Voltage VCC (V)
Fre
Rev.1.00 Jun 15, 2005 page 5 of 7
HA17904 Series
Common-Mode Rejection Ratio vs.
Frequency Characteristics
Slew Rate vs.
Power-Supply Voltage Characteristics
0.8
0.6
0.4
0.2
120
100
80
60
40
20
0
VCC = 15 V
Ta = 25°C
RS = 50 Ω
V1 = V2 = 1/2 VCC
f = 1.5 kHz
0
10
20
30
100
1 k
10 k
100 k
1 M
Power-Supply Voltage VCC (V)
Frequency f (Hz)
Rev.1.00 Jun 15, 2005 page 6 of 7
HA17904 Series
Package Dimensions
JEITA Package Code
P-DIP8-6.3x9.6-2.54
RENESAS Code
PRDP0008AF-A
Previous Code
DP-8B
MASS[Typ.]
0.51g
D
8
5
1
4
b 3
0.89
Z
Dimension in Millimeters
Reference
Symbol
Min
Nom
7.62
9.6
Max
e 1
D
10.6
7.4
E
6.3
A
5.06
A 1
b p
b 3
c
0.5
0.38
0.48
1.3
0.58
0.20
0.25
0.35
bp
e
θ
0
°
15°
e
2.29
2.54
2.79
Z
1.27
L
2.54
JEITA Package Code
P-SOP8-4.4x4.85-1.27
RENESAS Code
PRSP0008DE-B
*1
D
NOTE)
1. DIMENSIONS"*1 (Nom)"AND"*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION"*3"DOES NOT
INCLUDE TRIM OFFSET.
8
bp
Dimension in Millimeters
Reference
Symbol
Min
Nom
4.85
4.4
Max
5.25
Index mark
Terminal cross section
( Ni/Pd/Au plating )
D
E
A 2
A 1
A
1
4
0.00
0.35
0.15
0.1
0.4
0.20
2.03
0.45
*3
e
bp
Z
x
M
b p
b 1
c
L1
0.20
0.25
c
1
θ
H E
e
0
°
8°
6.35
6.5
6.75
1.27
x
0.12
0.15
0.75
0.85
L
y
y
Z
Detail F
L
0.42
0.60
1.05
L
1
Rev.1.00 Jun 15, 2005 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-u, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and ys the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property da
Remember to give due consideration to safety when making your circuit designs, with appropriabstitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of uited to the customer's
application; they do not convey any license under any intellectual property rights, or alogy Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringeme use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained
3. All information contained in these materials, including product data, diagrams, formation on products at the time of
publication of these materials, and are subject to change by Renesas Technovements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or
Renesas Technology Corp. assumes no responsibility for any damacuracies or errors.
Please also pay attention to information published by Renesas Tee Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these mrts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a fiion and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss res
5. Renesas Technology Corp. semiconductors are not desystem that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, on, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technolon whole or in part these materials.
7. If these products or technologies are subject ty must be exported under a license from the Japanese government and
cannot be imported into a country other tha
Any diversion or reexport contrary to the nd/or the country of destination is prohibited.
8. Please contact Renesas Technology Che products contained therein.
RENESAS SAL
http://www.renesas.com
Refer to "http://www.reneest and detailed information.
Renesas Technology Americ
450 Holger Way, San Jose, CA 9
Tel: <1> (408) 382-7500, Fax: <1> 1
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne Ed, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0
相关型号：
©2020 ICPDF网 联系我们和版权申明