FX50KMJ-03 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX50KMJ-03 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX50KMJ-03
High-Speed Switching Use
Pch Power MOS FET
REJ03G1450-0200
(Previous: MEJ02G0268-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
•
Drive voltage : 4 V
DSS : –30 V
DS(ON) (max) : 35 mΩ
V
r
ID : –50 A
Integrated Fast Recovery Diode (TYP.) : 55 ns
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1. Gate
2. Drain
3. Source
1
2
Applications
Motor control, Lamp contrC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–30
Unit
Conditions
VGS = 0 V
V
V
±20
VDS = 0 V
–50
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
–200
A
IDA
–50
A
L = 10 µH
IS
–50
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
ISM
–200
A
PD
30
W
°C
°C
V
Tch
Tstg
Viso
– 55 to +150
– 55 to +150
2000
AC for 1 minute,
Terminal to case
Mass
—
2.0
g
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
FX50KMJ-03
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min
–30
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –30 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –25 A, VGS = –10 V
ID = –9 A, VGS = – 4 V
ID = –25 A, VGS = –10 V
ID = –25 A, VDS = –10 V
—
±0.1
–0.1
–2.3
35
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
–1.3
—
–1.8
28
mΩ
mΩ
V
—
54
72
—
–0.70
23
–0.88
—
—
S
—
4270
695
342
21
—
pF
pF
pF
ns
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
VDD = –15 V, ID = –25 A,
V
GS = –10 V,
Rise time
tr
—
103
223
122
–1.0
—
—
ns
RGEN = RGS = 50 Ω
Turn-off delay time
td(off)
—
—
ns
Fall time
tf
—
—
s
Source-drain voltage
VSD
—
IS = –25 A, VGS = 0 V
hannel to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
55
–25 A, dis/dt = 50 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
FX50KMJ-03
Performance Curves
Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
50
40
30
20
10
0
–102
–7
–5
tw = 10µs
100µs
–3
–2
1ms
–101
–7
–5
–3
–2
–100
–7
–5
DC
Tc = 25°C
Single Pulse
–3
–2
0
1
2
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
cteristics (Typical)
Output Characteristics (Typical)
–100
–80
–60
–40
–20
0
–10
0
–5V
V
GS =
–10V
–8V
Tc = 25°C
Pulse Test
–7V
–6V
VGS = –10V
–4V
–5V
Tc = 25°C
Pulse Test
–3V
PD = 30W
PD
= 30W
0
–2
–4
0
–1.0
–2.0
–3.0
–4.0
–5.0
Drain-Sou
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
On-S
Gate-Source cal)
–10
–8
–6
–4
–2
0
100
80
60
40
20
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = –4V
ID = –100A
–10V
–50A
–25A
1
2
–100
–10
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–2
–4
–6
–8
–10
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Aug 07, 2006 page 3 of 6
FX50KMJ-03
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
–100
–80
–60
–40
–20
0
102
7
V
= –10V
DS
Pulse Test
Tc = 25°C
V
= –10V
DS
Pulse Test
5
4
75°C
125°C
3
TC = 25°C
2
101
7
5
4
3
2
100
1
2
–100
–10
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–2
–4
–6
–8
–10
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Capacitance vs.
Drain-Source Voltage (Typical)
haracteristics (Typical)
104
7
5
4
Ciss
3
t
d(off)
2
t
f
103
7
Coss
Cr
tr
5
4
3
3
t
d(on)
Tch = 25°C
f = 1MHz
2
2
V
= 0V
GS
102–3
101
0
1
–5 –7
–2 –3
–5 –7
–2 –3 –5 –7
–10
–2 –3 –5
–10
–
100
Drain-Sourc
Drain Current ID (A)
Gat
Gate
Source-Drain Diode Forward
Characteristics (Typical)
–10
–8
–6
–4
–2
–100
Tch = 25°C
= –50A
V
= 0V
GS
Pulse Test
I
D
–80
–60
–40
–20
0
V
–20V
–25V
DS = –10V
TC = 25°C
75°C
125°C
0
0
20
40
60
80
100
0
–0.4
–0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
FX50KMJ-03
Threshold Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
= –10V
V
= –10V
DS
= –1mA
GS
= –25A
Pulse Test
I
I
D
D
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transiepedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
= 0V
GS
= –1mA
D
I
D
3
P
DM
tw
1
Single Pulse
T
tw
T
D=
–3
–2
–1
0
1
2 3 57
10 10
2
10–4
10
10
10
10
2 3 57
2 3 57
2 3 57
2 3 57
2 3 57
–50
0
50
Pulse Width tw (s)
Channel Tempe
Switching Time
Switching Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
R
GEN
R
L
90%
90%
V
DD
R
GS
10%
10%
Vout
t
t
t
d(off)
t
f
d(on)
r
Rev.2.00 Aug 07, 2006 page 5 of 6
FX50KMJ-03
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
RENESAS Code
PRSS0003AB-A
Previous Code
MASS[Typ.]
2.0g
Unit: mm
2.8 0.2
10 0.3
φ3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25
Order Code
Standard order
code example
Lead form
Standard p
Standard order code
Straight type
Lead form
Plastic Ma
Plastic
Type name
50 Type name – Lead forming code
FX50KMJ-03
FX50KMJ-03-A8
Note: Please confirm the ping in detail.
Rev.2.00 Aug 07, 2006 page 6 of 6
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