FX20VSJ-3 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX20VSJ-3 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX20VSJ-3
High-Speed Switching Use
Pch Power MOS FET
REJ03G0273-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
DSS : – 150 V
DS(ON) (max) : 0.29 Ω
V
r
ID : – 20 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
TO-220S
4
e
Drain
. Source
4. Drain
1
2
3
Applications
Motor control, lamp controlverters, etc.
Maximum Ratin
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
bol
VDSS
VGSS
ID
Ratings
–150
Unit
V
Conditions
VGS = 0 V
±20
V
VDS = 0 V
–20
A
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
IDM
–80
A
IDA
–20
A
L = 30 µH
IS
–20
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
–80
A
PD
70
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
1.2
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FX20VSJ-3
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min.
–150
—
Typ.
—
Max.
—
Unit
V
Test conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –150 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V
ID = –10 A, VGS = – 4 V
ID = –10 A, VGS = –10 V
ID = –10 A, VDS = –10 V
—
±0.1
–0.1
–2.0
0.29
0.32
–2.9
—
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
–1.0
—
–1.5
0.23
0.25
–2.3
17.5
4470
248
115
15
Ω
—
Ω
—
V
—
S
—
—
pF
pF
pF
ns
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
Coss
Crss
td(on)
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
VDD = – 80 V, ID = –10 A,
GS = –10 V,
GEN = RGS = 50 Ω
V
R
Rise time
tr
—
42
—
Turn-off delay time
td(off)
—
273
114
–1.0
—
—
Fall time
tf
—
—
Source-drain voltage
VSD
—
10 A, VGS = 0 V
to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
10
0 A, dis/dt = 100 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
FX20VSJ-3
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
100
80
60
40
20
0
–102
–7
–5
–3
–2
tw = 10µs
100µs
–101
–7
–5
–3
–2
1ms
–100
–7
–5
10ms
Tc = 25°C
Single Pulse
DC
–3
–2
1
2
3
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
0
0
0
50
100
150
200
–10
Case Temperature Tc (°C)
Draiurce Voltage V
(V)
DS
Output Characteristics (Typical)
cs (Typical)
–20
–16
–12
–8
–4
0
V
=
Tc = 25°C
Pulse Test
GS
–10V
Tc = 25°C
Pulse Test
–8V
–6V
–4V
–
2
0
–6V
–4V
–3V
–3V
–2.5V
P
D
= 7
–2
–4
0
–1.0
–2.0
–3.0
–
4.0
–5.0
Drain-S
Drain-Source Voltage V
(V)
DS
Gate-Sal)
On-State Resistance vs.
Drain Current (Typical)
–10
0.5
0.4
0.3
0.2
0.1
0
Tc = 25°C
Pulse Test
I =
D
–
30A
20A
–
–
–
–
8
6
4
2
0
V
GS
= –4V
–10V
–
–10A
Tc = 25°C
Pulse Test
–
2
–
4
–
6
–
8
–10
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Rev.1.00, Aug.20.2004, page 3 of 6
FX20VSJ-3
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
Tc = 25°C
–
–
–
–
50
40
30
20
102
7
V
= –10V
DS
Pulse Test
V
= –10V
DS
Pulse Test
5
Tc = 25°C
75°C
3
2
125°C
101
7
5
3
2
–10
0
100
0
–
2
–
4
–
6
–
8
–10
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Capacitance vs.
Drain-Source Voltage (Typical)
ristics (Typical)
104
7
5
Ciss
= 50Ω
GS
3
2
t
d(off)
f
103
7
5
t
3
2
Cos
t
r
102
7
5
2
Tch = 25°C
f = 1MHz
3
2
td(on)
V
GS
= 0V
101
101
–100 –2 –3 –5 –7–
–100
–2 –3 –5 –7–101
–2 –3
–5 –7
Drain-Sou
Drain Current I (A)
D
Source-Drain Diode Forward
Characteristics (Typical)
–10
–20
–16
–12
Tc = 25°C
Pulse Test
Tch = 25°C
= – 20A
I
D
–
–
–
–
8
6
4
2
0
Tc = 125°C
75°C
V
–
=
–
50V
DS
80V
25°C
–100V
–
–
8
4
0
0
20
40
60
80
100
0
–
0.4
–
0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
(V)
SD
Rev.1.00, Aug.20.2004, page 4 of 6
FX20VSJ-3
On-State Resistance vs.
Channel Temperature (Typical)
Threshold Voltage vs.
Channel Temperature (Typical)
101
7
–
–
–
4.0
3.2
2.4
V
= –10V
GS
= 1/2 I
Pulse Test
V
= –10V
DS
I = –1mA
D
I
D
D
5
3
2
100
7
–1.6
5
3
2
–
0.8
0
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transiedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
= 0V
GS
= –1mA
I
D
1
ingle Pulse
P
DM
tw
T
tw
T
D =
–50
0
50
10
42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Channel Tempera
Pulse Width tw (s)
Switching
Switching Waveform
nitor
Vin
Vin Monito
10%
R
GEN
R
L
90%
V
DD
90%
90%
R
GS
10%
10%
Vout
t
t
r
t
t
f
d(on)
d(off)
Rev.1.00, Aug.20.2004, page 5 of 6
FX20VSJ-3
Package Dimensions
TO-220S
EIAJ Package Code
Mass (g) (reference value)
1.2
Lead Material
Cu alloy
JEDEC Code
10.5 max
4.5
1.3
+0.3
- 0
0
1
5
0.5
0.8
Dimension in Millimeters
Min Typ Max
l
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
y
y1
ZD
ZE
Order Code
Standard order
code example
Lead form
Stan
Standard order code
Surface-mounted type T
Type name – T +Direction (1 or 2) +1
50 Type name
FS20VSJ-3-T11
FS20VSJ-3
Surface-mounted type
Straight type
(
50 Type name +A1
FS20VSJ-3-A1
Note : Please confirm the spout the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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