FS2KMJ-3 [RENESAS]
MITSUBISHI Nch POWER MOSFET; 三菱N沟道功率MOSFET
| 型号： | FS2KMJ-3 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI Nch POWER MOSFET |
| 文件： | 总5页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
FS2KMJ-3
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
1 2 3
w
¡4V DRIVE
¡VDSS ................................................................................150V
¡rDS (ON) (MAX) .............................................................. 0.75Ω
¡ID ............................................................................................2A
¡Integrated Fast Recovery Diode (TYP.) ............. 65ns
¡Viso ................................................................................ 2000V
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
150
±20
V
2
A
IDM
IDA
Drain current (Pulsed)
8
A
Avalanche drain current (Pulsed) L = 100µH
Source current
2
A
IS
2
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
8
15
A
PD
W
°C
°C
V
Tch
Tstg
Viso
—
–55 ~ +150
–55 ~ +150
2000
Storage temperature
Isolation voltage
Weight
AC for 1minute, Terminal to case
Typical value
2.0
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
150
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VGS = ±20V, VDS = 0V
VDS = 150V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 4V
—
±0.1
0.1
2.0
0.75
0.81
0.75
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
1.0
—
1.5
0.58
0.61
0.58
4.5
360
62
Ω
—
Ω
Drain-source on-state voltage ID = 1A, VGS = 10V
—
V
ID = 1A, VDS = 5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
—
—
—
16
—
td (on)
tr
—
11
—
—
9
—
VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
35
—
—
13
—
VSD
Source-drain voltage
Thermal resistance
Reverse recovery time
IS = 1A, VGS = 0V
—
1.0
—
1.5
8.33
—
Channel to case
Rth (ch-c)
trr
—
°C/W
ns
IS = 2A, dis/dt = –100A/µs
—
65
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
20
16
12
8
2
101
7
5
3
2
tw = 10ms
100ms
100
7
5
3
2
1ms
10ms
10–1
7
DC
T
C
= 25°C
4
Single Pulse
5
3
2
0
0
50
100
150
200
2 3 5 7101 2 3 5 7102 2 3 5 7103
2
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
2.0
1.6
1.2
0.8
0.4
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = 10V
3V
6V
4V
3V
V
GS = 10V
6V
4V
P
D
= 15W
2.5V
2.5V
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE V
DS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
1.0
0.8
0.6
0.4
0.2
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = 4V
10V
I
D
= 3A
2A
1A
0
0
3
2
4
6
8
10
10–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
101
7
VDS = 5V
Tc = 25°C
Pulse Test
V
DS = 10V
5
Pulse Test
4
3
2
6
TC = 25°C
75°C
125°C
100
7
4
5
4
3
2
2
0
10–1
2
4
6
8
10
10–1
2
3 4 5 7 100 3 4 5 7 101
2
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
Tch = 25°C
GS = 0V
Tch = 25°C
DD = 80V
GS = 10V
103
7
V
V
V
R
5
3
2
f = 1MH
Z
Ciss
5
3
2
GEN = RGS = 50Ω
t
f
102
7
102
7
5
3
2
t
d(off)
5
3
2
Coss
Crss
t
t
d(on)
r
101
7
101
7
5
3
2
5
3
2
100
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
10–1
2
3 4 5 7 100
2
3 4 5 7 101
(A)
V
DRAIN CURRENT
ID
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
8
10
8
Tch = 25°C
= 2A
V
GS = 0V
I
D
Pulse Test
6
6
V
80V
100V
DS = 50V
TC = 125°C
4
4
75°C
25°C
2
2
0
0
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
4.0
3.2
2.4
1.6
0.8
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
V
I
GS = 0V
D = 1mA
5
3
2
101
7
D = 1.0
0.5
0.2
5
3
2
P
DM
100
7
tw
0.1
0.05
0.02
0.01
T
5
3
2
tw
D
=
T
Single Pulse
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
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