BCR5PM-14LG_10 [RENESAS]

Triac; TRIAC
BCR5PM-14LG_10
型号: BCR5PM-14LG_10
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Triac
TRIAC

三端双向交流开关
文件: 总8页 (文件大小:113K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Datasheet  
BCR5PM-14LG  
R07DS0087EJ0200  
(Previous: REJ03G1558-0100)  
Rev.2.00  
Triac  
Medium Power Use  
Jul 27, 2010  
Features  
IT (RMS) : 5 A  
DRM : 800 V (Tj = 125C)  
FGTI, IRGTI, IRGTIII : 30 mA  
Viso : 2000 V  
The Product guaranteed maximum junction  
temperature 150C  
Insulated Type  
Planar Type  
UL Recognized: File No. E223904  
V
I
Outline  
RENESAS Package code: PRSS0003AA-A  
(Package name: TO-220F )  
2
1. T1 Terminal  
2. T2 Terminal  
3. Gate Terminal  
3
1
1
2
3
Applications  
Switching mode power supply, Washing machine, small motor controller, copying machine, electric heater control, and  
other general controlling devices  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
Conditions  
14  
800  
700  
840  
V
V
V
Tj = 125C  
Tj = 150C  
Repetitive peak off-state voltageNote1  
VDRM  
VDSM  
Non-repetitive peak off-state voltageNote1  
R07DS0087EJ0200 Rev.2.00  
Jul 27, 2010  
Page 1 of 7  
BCR5PM-14LG  
Preliminary  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusing  
IT (RMS)  
5
A
Commercial frequency, sine full wave  
360° conduction, Tc = 113C  
ITSM  
I2t  
50  
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
10.4  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
5
W
W
V
0.5  
10  
2
Peak gate current  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +150  
– 40 to +150  
2.0  
C  
C  
g
Tstg  
Typical value  
Isolation voltage  
Viso  
2000  
V
Ta = 25C, AC 1 minute,  
T1 T2 G terminal to case  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
2.0  
Unit  
mA  
V
Test conditions  
Tj = 150C, VDRM applied  
VTM  
1.8  
Tc = 25C, ITM = 7 A,  
Instantaneous measurement  
Gate trigger voltageNote2  
  
  
VFGT  
1.5  
1.5  
1.5  
30  
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
VRGT  
VRGT  
V
  
Gate trigger currentNote2  
IFGT  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
  
IRGT  
30  
IRGT  
30  
  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.2/0.1  
4.9  
V
Tj = 125C/150C, VD = 1/2 VDRM  
Junction to caseNote3  
Rth (j-c)  
(dv/dt)c  
C/W  
V/s  
Critical-rate of rise of off-state  
commutating voltageNote4  
5/1  
Tj = 125C/150C  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125C/150C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = – 2.5 A/ms  
Time  
Main Current  
Main Voltage  
Time  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS0087EJ0200 Rev.2.00  
Jul 27, 2010  
Page 2 of 7  
BCR5PM-14LG  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
102  
7
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
3
2
101  
7
Tj = 150°C  
5
3
2
100  
7
5
3
2
Tj = 25°C  
101  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
100  
2
3
5 7 101  
2
3
5 7 102  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics (I, II and III)  
103  
7
5
Typical Example  
3
2
V
GM = 10V  
P
G(AV) = 0.5W  
GM = 5W  
5
101  
P
I
RGT III  
7
3
2
I
RGT I  
5
I
GM = 2A  
3
2
V
GT = 1.5V  
102  
7
100  
7
I
FGT I  
5
5
3
3
2
2
101  
7
V
GD = 0.1V  
I
FGT I  
I
RGT I,  
I
RGT III  
101  
–60 –4020  
5
101  
2
3
5 7102  
2
3
5 7103  
2
3
5 7104  
0
20 40 60 80 100 120 140 160  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
102  
2
3
5 7103  
2
3
5 7104  
103  
7
5.0  
Typical Example  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5
3
2
102  
7
5
3
2
10160 –4020  
0
20 40 60 80 100 120 140 160  
101  
2
3
5 7100  
2
3
5 7101  
2
3
5 7102  
Junction Temperature (°C)  
Conduction Time (Cycles at 60Hz)  
R07DS0087EJ0200 Rev.2.00  
Jul 27, 2010  
Page 3 of 7  
BCR5PM-14LG  
Preliminary  
Maximum Transient Thermal Impedance  
Characteristics (Junction to ambient)  
Maximum On-State Power Dissipation  
10  
103  
7
No Fins  
5
9
8
7
6
5
4
3
2
1
0
3
2
102  
7
5
3
2
101  
7
5
3
2
100  
7
360° Conduction  
Resistive,  
inductive loads  
5
3
2
10–1  
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105  
0
1
2
3
4
5
6
7
8
9 10  
Conduction Time (Cycles at 60Hz)  
RMS On-State Current (A)  
Allowable Case Temperature vs.  
RMS On-State Current  
Allowable Ambient Temperature vs.  
RMS On-State Current  
160  
160  
140  
120  
100  
80  
Curves apply regardless  
of conduction angle  
140  
120  
100  
80  
60 × 60 × t2.3  
100 × 100 × t2.3  
120 × 120 × t2.3  
60  
60  
Curves apply regardless  
All fins are  
40  
40  
of conduction angle  
black painted  
360° Conduction  
Resistive, inductive loads  
aluminum  
Natural convection  
and greased  
20 Resistive,  
20  
inductive loads  
0
0
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
RMS On-State Current (A)  
RMS On-State Current (A)  
Allowable Ambient Temperature vs.  
RMS On-State Current  
Repetitive Peak Off-State Current vs.  
Junction Temperature  
106  
7
160  
140  
120  
100  
80  
Natural convection  
No Fins  
Curves apply regardless  
of conduction angle  
Resistive, inductive loads  
Typical Example  
5
3
2
105  
7
5
3
2
104  
7
5
60  
3
2
103  
7
40  
5
20  
3
2
0
0
10260 –40–20  
0.5 1.0 1.5 2.0 2.5 3.0  
RMS On-State Current (A)  
0
20 40 60 80 100 120 140 160  
Junction Temperature (°C)  
R07DS0087EJ0200 Rev.2.00  
Jul 27, 2010  
Page 4 of 7  
BCR5PM-14LG  
Preliminary  
Holding Current vs.  
Junction Temperature  
Latching Current vs.  
Junction Temperature  
102  
7
103  
7
+
+
V
D
= 12V  
T
T
, G  
, G  
2
2
Typical Example  
5
5
3
2
Distribution  
Distribution  
3
2
, G  
+
102  
7
T
2
Typical Example  
Typical Example  
5
3
2
101  
7
101  
7
5
3
2
5
3
2
100  
100  
60 –40–20  
0
20 40 60 80 100 120 140 160  
60 –40–20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Junction Temperature  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=125°C)  
160  
140  
120  
100  
80  
160  
Typical Example  
Tj = 125°C  
Typical Example  
140  
120  
100  
80  
60  
III Quadrant  
I Quadrant  
60  
40  
20  
0
40  
20  
0
101  
2
3
5 7102  
2
3
5 7103  
2 3  
5 7104  
60 –40–20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (°C)  
Rate of Rise of Off-State Voltage (V/μs)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=150°C)  
Commutation Characteristics (Tj=125°C)  
102  
7
5
160  
Time  
Typical Example  
Tj = 150°C  
Main Voltage  
(dv/dt)c  
Main Current  
V
D
140  
120  
100  
80  
III Quadrant  
I Quadrant  
(di/dt)c  
Time  
I
T
3
2
τ
101  
7
5
Typical Example  
Tj = 125°C  
60  
III Quadrant  
I = 4A  
T
40  
3
2
τ = 500μs  
V
= 200V  
Minimum  
Characteristics  
Value  
D
I Quadrant  
20  
f = 3Hz  
100  
0
101  
2
3
5 7102  
2
3
5 7103  
2
3
5 7104  
100 2 3 5 7101 2 3 5 7102 2 3 5 7103  
Rate of Rise of Off-State Voltage (V/μs)  
Rate of Decay of On-State  
Commutating Current (A/ms)  
R07DS0087EJ0200 Rev.2.00  
Jul 27, 2010  
Page 5 of 7  
BCR5PM-14LG  
Preliminary  
Gate Trigger Current vs.  
Gate Current Pulse Width  
Commutation Characteristics (Tj=150°C)  
103  
7
102  
7
5
Typical Example  
Tj = 150°C  
I = 4A  
T
Time  
Typical Example  
Main Voltage  
(dv/dt)c  
V
D
I
RGT III  
5
Main Current  
(di/dt)c  
Time  
I
T
τ = 500μs  
3
2
3
2
τ
I
V
D
= 200V  
RGT I  
f = 3Hz  
102  
7
101  
7
I
FGT I  
I Quadrant  
5
5
3
2
3
2
Minimum  
Characteristics  
Value  
III Quadrant  
101  
100  
100 2 3 5 7101 2 3 5 7102 2 3 57103  
100  
2
3
5 7 101  
2
3
5 7 102  
Rate of Decay of On-State  
Gate Current Pulse Width (μs)  
Commutating Current (A/ms)  
Gate Trigger Characteristics Test Circuits  
Recommended Circuit Values Around The Triac  
Load  
6Ω  
6Ω  
C1  
R1  
A
A
C0 R0  
6V  
6V  
330Ω  
330Ω  
V
V
C
R
= 0.1 to 0.47μF  
= 47 to 100Ω  
C
R
= 0.1μF  
= 100Ω  
1
1
0
0
Test Procedure I  
6Ω  
Test Procedure II  
A
6V  
330Ω  
V
Test Procedure III  
R07DS0087EJ0200 Rev.2.00  
Jul 27, 2010  
Page 6 of 7  
BCR5PM-14LG  
Preliminary  
Package Dimensions  
Package Name  
TO-220F  
JEITA Package Code  
SC-67  
RENESAS Code  
PRSS0003AA-A  
Previous Code  
MASS[Typ.]  
2.0g  
Unit: mm  
10.5Max  
5.2  
2.8  
φ3.2 ± 0.2  
1.3Max  
0.8  
2.54  
2.54  
0.5  
2.6  
Order Code  
Standard order  
code example  
Lead form  
Standard packing  
Quantity  
Standard order code  
Straight type  
Lead form  
Vinyl sack  
Plastic Magazine (Tube)  
100 Type name  
50 Type name – Lead forming code  
BCR5PM-14LG  
BCR5PM-14LG-A8  
Note : Please confirm the specification about the shipping in detail.  
R07DS0087EJ0200 Rev.2.00  
Jul 27, 2010  
Page 7 of 7  
Notice  
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