BCR1BM-16A-TBB00 [RENESAS]

800V - 1A - Triac Low Power Use; 800V - 1A - 三端双向可控硅低功耗应用


型号：	BCR1BM-16A-TBB00
厂家：	RENESAS TECHNOLOGY CORP
描述：	800V - 1A - Triac Low Power Use 800V - 1A - 三端双向可控硅低功耗应用可控硅
文件：	总4页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Datasheet

BCR1BM-16A

800V - 1A - Triac

R07DS0967EJ0001

Rev.0.01

Nov 28, 2012

Low Power Use

Features



I_{T (RMS)}: 1 A

_DRM: 800 V (Tj = 125C)

_FGTI, I_RGTI, I_RGTIII: 15 mA



Tj: 125 °C

Planar Passivation Type

Outline

RENESAS Package code: PRSS0003EA-A

(Package name: TO-92)

1. T Terminal

2. Gate Terminal

3. T Terminal

Applications

Washing machine, electric fan, air cleaner, other general purpose control applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

V_DRM

800

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

Commercial frequency, sine full wave

360° conduction, Tc = 49°C

Surge on-state current

I²t for fusing

I_TSM

I²t

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

0.26

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.1

Peak gate current

0.5

Junction temperature

Storage temperature

Mass

– 40 to +125

0.23

°C

Tstg

—

Typical value

R07DS0967EJ0001 Rev.0.01

Nov 28, 2012

Page 1 of 3

BCR1BM-16A

Preliminary

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

I_DRM

Min.

—

Typ.

—

Max.

1.0

Unit

Test conditions

Tj = 125°C, V_DRMapplied

V_TM

—

2.0

Tc = 25°C, I_TM= 1.2 A,

Instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

2.0

Tj = 25°C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT



V_RGT



Gate trigger current^Note2

I_FGT

Tj = 25°C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



I_RGT



Gate non-trigger voltage

Thermal resistance

V_GD

0.1

—

Tj = 125°C, V_D= 1/2 V_DRM

Junction to case^Note3

Tj = 125°C

R_{th (j-c)}

(dv/dt)c

°C/W

V/s

Critical-rate of rise of off-state

commutating voltage^Note4

0.5

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T₂terminal 1.5 mm away from the molded case.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125°C

(di/dt)c

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.5 A/ms

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0967EJ0001 Rev.0.01

Nov 28, 2012

Page 2 of 3

BCR1BM-16A

Preliminary

Package Dimensions

Package Name

TO-92*

JEITA Package Code

SC-43A

RENESAS Code

PRSS0003EA-A

Previous Code

T920

MASS[Typ.]

0.23g

Unit: mm

φ5.0Max

4.4

1.251.25

Circumscribed circle φ0.7

Ordering Information

Orderable Part Number

BCR1BM-16A#B00

Packing

Bag

Quantity

Remark

500 pcs. Straight type

BCR1BM-16A-A6#B00

BCR1BM-16A-TB#B00

Bag

500 pcs. A6 Lead form

2000 pcs. A8 Lead form

Adhesive Tape

Note: Please confirm the specification about the shipping in detail.

R07DS0967EJ0001 Rev.0.01

Nov 28, 2012

Page 3 of 3

Notice

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Colophon 2.2

BCR1BM-16A-TBB00 [RENESAS]

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