BCR16CS-16LB [RENESAS]
Triac Medium Power Use; 三端双向可控硅中功率使用型号: | BCR16CS-16LB |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Triac Medium Power Use |
文件: | 总8页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR16CS-16LB
Triac
R07DS0226EJ0100
Rev.1.00
Medium Power Use
Dec 14, 2010
Features
IT (RMS) : 16 A
DRM : 800 V
FGTI, IRGTI, IRGT III : 30 mA
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
V
I
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
2, 4
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
4. T Terminal
3
2
1
2
3
1
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
16
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
800
960
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
16
A
Commercial frequency sine full wave
360° conduction Tc = 125CNote3
Surge on-state current
I2t for fusing
160
A
60Hzsinewave 1 full cycle, peak value,
non-repetitive
106.5
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +150
– 40 to +150
1.3
C
C
g
Tstg
—
Typical value
Notes: 1. Gate open.
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 1 of 7
BCR16CS-16LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
VTM
—
—
1.5
Tc = 25C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger currentNote2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
30
IRGT
30
Gate non-trigger voltage
Thermal resistance
VGD
0.2/0.1
—
—
—
—
—
1.4
—
V
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3 Note4
Tj = 125C/150C
Rth (j-c)
(dv/dt)c
C/W
V/s
Critical-rate of rise of off-state
commutating voltageNote5
10/1
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
(di/dt)c
Time
Main Current
Main Voltage
Time
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 2 of 7
BCR16CS-16LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
7
200
180
160
140
120
100
80
5
3
2
102
7
5
3
2
Tj = 150°C
101
7
5
3
2
60
40
Tj = 25°C
20
100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
7
5
4
3
2
Typical Example
V
= 10V
P
G(AV)
= 0.5W
GM
101
7
5
3
2
P
= 5W
GM
3
I
= 2A
GM
I
RGT III
2
V
= 1.5V
GT
102
7
5
4
100
7
I
, I
FGT I RGT I
5
3
2
3
2
10–1
7
I
, I
, I
FGT I RGT I RGT III
V
= 0.1V
GD
5
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20
0 20 40 60 80 100120140160
Gate Current (mA)
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Gate Trigger Voltage vs.
Junction Temperature
102 2 3 5 7 103
103
1.6
Typical Example
7
1.4
1.2
1.0
0.8
0.6
0.4
5
4
3
2
102
7
5
4
3
2
0.2
0
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20
0
20 40 60 80 100120140160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 3 of 7
BCR16CS-16LB
Preliminary
Allowable Case Temperature vs.
Maximum On-State Power Dissipation
RMS On-State Current
40
35
30
25
20
15
10
5
160
140
120
100
80
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
60
40
360° Conduction
Resistive,
20
inductive loads
0
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60
60
Curves apply
regardless of
40
40
conduction angle
Resistive, inductive loads
Natural convection
20
20
0
0
0
2
4
6
8
10 12 14 16 18 20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
103
7
5
4
Typical Example
Typical Example
3
2
105
7
3
5
3
2
2
104
7
102
7
5
4
5
3
2
103
7
3
5
2
3
2
101
102
–60–40–20
0
20 40 60 80 100120140160
–60–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 4 of 7
BCR16CS-16LB
Preliminary
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
103
7
160
140
120
100
80
Typical Example
5
Distribution
–
3
2
+
T
, G
2
Typical Example
102
7
5
3
2
60
101
7
5
40
3
+
–
+
–
T
T
, G
, G
2
2
20
2
Typical Example
40 80
100
0
–40
0
120
160
–60–40–20
0
20 40 60 80 100120140160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
160
Typical Example
Tj = 150°C
Typical Example
Tj = 125°C
140
120
100
80
140
120
100
80
III Quadrant
I Quadrant
III Quadrant
I Quadrant
60
60
40
40
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
7
5
Time
Main Voltage
Typical Example
Tj = 125°C
Time
Typical Example
Tj = 150°C
Main Voltage
7
5
(dv/dt)c
V
D
(dv/dt)c
V
D
Main Current
Main Current
I = 4A
I = 4A
T
T
(di/dt)c
Time
(di/dt)c
Time
I
T
I
T
τ = 500μs
τ = 500μs
τ
3
2
3
2
τ
V
D
= 200V
V
D
= 200V
f = 3Hz
f = 3Hz
101
7
5
101
7
5
I Quadrant
Minimum
Characteristics
Value
III Quadrant
3
2
3
2
Minimum
Characteristics
Value
III Quadrant
I Quadrant
100
7
100
7
3
5
7 101
2
5 7 102
2
3
3
5
7 101
2
5 7 102
2 3
3
3
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 5 of 7
BCR16CS-16LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
Typical Example
I
FGT I
I
RGT I
3
I
RGT III
2
102
7
5
4
3
2
101
100
2
3 4 5 7 101
2
3 4 5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
R1
A
A
6V
6V
C0 R0
330Ω
330Ω
V
V
C
R
= 0.1 to 0.47μF
= 47 to 100Ω
C
R
= 0.1μF
= 100Ω
1
1
0
0
Test Procedure I
6Ω
Test Procedure II
A
6V
330Ω
V
Test Procedure III
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 6 of 7
BCR16CS-16LB
Preliminary
Package Dimensions
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.15
2.49 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.37 ± 0.2
0.4 ± 0.1
+ 0.2
– 0.1
1.3 ± 0.2
0.86
2.54 ± 0.5
2.54 ± 0.5
Ordering Information
Orderable Part Number
BCR16CS-16LB#B00
Packing
Quantity
50 pcs.
Remark
Tube
Tube
—
BCR16CS-16LB-A1#B00
BCR16CS-16LB-T11#B00
50 pcs. A1 Lead form
1000 pcs. Taping direction “T1”
Embossed Tape
R07DS0226EJ0100 Rev.1.00
Dec 14, 2010
Page 7 of 7
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0
相关型号:
BCR16E
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明