BCR12CM-16LB#B00 [RENESAS]
TRIAC;
| 型号： | BCR12CM-16LB#B00 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRIAC 栅 三端双向交流开关 栅极 |
| 文件： | 总8页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR12CM-16LB
800V - 12A - Triac
R07DS0976EJ0100
Rev.1.00
Nov 28, 2012
Medium Power Use
Features
IT (RMS) : 12 A
DRM : 800 V
FGTI, IRGTI, IRGT III : 30 mA
The Product guaranteed maximum junction
temperature 150C
Non-Insulated Type
Planar Type
V
I
Outline
RENESAS Package code: PRSS0004AA-A
Package name: TO-220)
(
4
2, 4
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
3
1
1
2
3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
16
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
800
960
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
12
120
60
A
Commercial frequency, sine full wave
360 conduction, Tc = 123C Note3
Surge on-state current
I2t for fusion
A
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
–40 to +150
–40 to +150
2.0
C
C
g
Tstg
—
Typical value
R07DS0976EJ0100 Rev.1.00
Nov 28, 2012
Page 1 of 7
BCR12CM-16LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
VTM
—
—
1.6
Tc = 25C, ITM = 20 A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger curentNote2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
30
IRGT
30
Gate non-trigger voltage
Thermal resistance
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3,4
Tj = 125C
V
Rth (j-c)
1.8
—
C/W
V/s
V/s
Critical-rate of rise of off-state
commutation voltageNote5
(dv/dt)c
—
Tj = 150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm apart from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –6 A/ms
(di/dt)c
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0976EJ0100 Rev.1.00
Nov 28, 2012
Page 2 of 7
BCR12CM-16LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
102
200
160
120
80
101
Tj = 150°C
Tj = 25°C
100
40
10−1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
VGM = 10V
103
102
101
Typical Example
101
PGM = 5W
IGM = 2A
P
G(AV) =
I , I
RGT I RGT III
0.5W
V
GT = 1.5V
I
FGT I
100
10−1
I
I , I
FGT I RGT III
VGD = 0.1V
RGT I
101
102
103
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
103
2.4
Typical Example
2.0
1.6
1.2
0.8
0.4
0
102
101
–40
10−1
100
101
102
0
40
80
120
160
Conduction Time (Cycles at 60Hz)
Junction Temperature (°C)
R07DS0976EJ0100 Rev.1.00
Nov 28, 2012
Page 3 of 7
BCR12CM-16LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
16
14
12
10
8
160
140
120
100
80
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
6
60
4
40
360° Conduction
Resistive,
inductive loads
2
20
0
0
0
2
4
6
7
10 12 14 16
0
2
4
6
7
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
120
100
80
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
All fins are black painted
aluminum and greased
140
120
100
80
120 120 t2.3
100 100 t2.3
60 60 t2.3
60
40
20
0
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
0
2
4
6
7
10 12 14 16
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
106
105
160
140
120
100
80
Typical Example
Typical Example
104
103
60
40
20
102
0
–40
–40
0
40
80
120
160
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0976EJ0100 Rev.1.00
Nov 28, 2012
Page 4 of 7
BCR12CM-16LB
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
103
102
101
100
Typical Example
Distribution
–
+
T
, G
Typical Example
2
102
+
–
+
–
T
T
, G
, G
2
Typical Example
40 80
2
101
–40
0
40
80
120
160
–40
0
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
160
Typical Example
Tj = 125°C
Typical Example
Tj = 150°C
140
120
100
80
140
120
100
80
III Quadrant
III Quadrant
I Quadrant
I Quadrant
60
60
40
40
20
20
0
0
101
102
103
104
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
102
Time
Main Voltage
(dv/dt)c
Main Current
Time
Main Voltage
(dv/dt)c
Main Current
V
D
V
D
(di/dt)c
Time
I
(di/dt)c
Time
T
I
T
τ
τ
I Quadrant
Minimum
Value
101
101
III Quadrant
III Quadrant
I Quadrant
Typical Example
Typical Example
Tj = 150°C, I = 4A
T
τ = 500μs,
Tj = 125°C, I = 4A
T
τ = 500μs,
V = 200V, f = 3Hz
D
V = 200V, f = 3Hz
D
100
100
100
100
101
102
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0976EJ0100 Rev.1.00
Nov 28, 2012
Page 5 of 7
BCR12CM-16LB
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
I
FGT I
I
RGT I
I
RGT III
102
101
100
101
102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
Recommended Circuit Values Around The Triac
Load
C1
R1
A
A
6V
6V
C0 R0
330Ω
330Ω
V
V
C
R
= 0.1 to 0.47μF
= 47 to 100Ω
C
R
= 0.1μF
= 100Ω
1
1
0
0
Test Procedure I
Test Procedure II
6Ω
A
6V
330Ω
V
Test Procedure III
R07DS0976EJ0100 Rev.1.00
Nov 28, 2012
Page 6 of 7
BCR12CM-16LB
Preliminary
Package Dimensions
Package Name
TO-220
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AA-A
Previous Code
T220AB
MASS[Typ.]
2.0g
Unit: mm
10.5Max
4.5
1.3
φ3.6
1.0
0.8
0.5
2.6
2.54
2.54
Ordering Information
Orderable Part Number
BCR12CM-16LB#B00
Packing
Quantity
100 pcs. Straight type
50 pcs. A8 Lead form
Remark
Bag
Tube
BCR12CM-16LBA8#B00
Note:
Please confirm the specification about the shipping in detail.
R07DS0976EJ0100 Rev.1.00
Nov 28, 2012
Page 7 of 7
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2
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