BCR10CS-12LBA1#BH0 [RENESAS]

600V-10A-Triac Medium Power Use, TO-262, /Tube;
BCR10CS-12LBA1#BH0
型号: BCR10CS-12LBA1#BH0
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

600V-10A-Triac Medium Power Use, TO-262, /Tube

文件: 总10页 (文件大小:219K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Datasheet  
BCR10CS-12LB  
R07DS0224EJ0500  
Rev.5.00  
600V-10A-Triac  
Oct 19, 2015  
Medium Power Use  
Features  
IT (RMS) : 10 A  
DRM : 600 V  
FGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6  
The product guaranteed maximum junction  
temperature of 150°C  
Non-Insulated Type  
Planar Passivation Type  
V
I
Outline  
RENESAS Package code: PRSS0004AE-B  
(Package name: LDPAK(S)-(1) )  
RENESAS Package code: PRSS0004AB-A  
(Package name: TO-220S)  
2, 4  
1
4
4
1. T1 Terminal  
2. T2 Terminal  
3. Gate Terminal  
4. T2 Terminal  
3
1
2
3
1
2
3
RENESAS Package code: PRSS0004AS-A  
(Package name: TO-263)  
RENESAS Package code: PRSS0004AR-A  
(Package name: TO-262)  
4
4
1 2 3  
1 2 3  
Applications  
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo  
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid  
state relay, copying machine, electric tool, electric heater control, and other general purpose control applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak off-state voltageNote1  
Non-repetitive peak off-state voltageNote1  
VDRM  
VDSM  
600  
720  
V
V
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 1 of 9  
BCR10CS-12LB  
Preliminary  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusing  
IT (RMS)  
10  
A
Commercial frequency, sine full wave  
360° conduction, Tc = 128CNote3  
ITSM  
I2t  
100  
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
41.6  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
5
W
W
V
0.5  
10  
2
Peak gate current  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +150  
– 40 to +150  
1.3  
C  
C  
g
Tstg  
Typical value  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
2.0  
Unit  
mA  
V
Test conditions  
Tj = 150C, VDRM applied  
VTM  
1.5  
Tc = 25C, ITM = 15 A,  
Instantaneous measurement  
Gate trigger voltageNote2  
  
  
VFGT  
VRGT  
VRGT  
IFGT  
1.5  
1.5  
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
1.5  
V
Gate trigger currentNote2  
30Note6  
30Note6  
30Note6  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
  
IRGT  
IRGT  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.2/0.1  
1.8  
V
Tj = 125C/150C, VD = 1/2 VDRM  
Junction to caseNote3 Note4  
Tj = 125C/150C  
Rth (j-c)  
(dv/dt)c  
C/W  
V/s  
Critical-rate of rise of off-state  
commutating voltageNote5  
10/1  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. Case temperature is measured on the T2 tab.  
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.  
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125C/150C  
2. Rate of decay of on-state commutating current  
(di/dt)c = – 5.0 A/ms  
(di/dt)c  
Time  
Time  
Main Current  
Main Voltage  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 2 of 9  
BCR10CS-12LB  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
102  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
7
5
3
2
Tj = 150°C  
101  
7
5
3
2
Tj = 25°C  
100  
7
5
100  
2
3
4 5  
7
101  
2
3 4 5 7 102  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics (I, II and III)  
103  
5
Typical Example  
3
2
7
5
V
GM  
= 10V  
P
= 5W  
GM  
101  
7
5
3
2
I , I  
RGT I RGT III  
P
=
0.5W  
G(AV)  
I
= 2A  
GM  
3
2
V
= 1.5V  
GT  
102  
I
100  
7
5
FGT I  
7
5
3
2
3
2
I
I , I  
FGT I RGT III  
RGT I  
10–1  
7
V
GD  
= 0.1V  
5
101  
–604020  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
0 20 40 60 80 100120140160  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
102 2 3 5 7 103  
2.4  
2
103  
Typical Example  
7
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
5
4
3
2
102  
7
5
4
3
2
101  
–604020  
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
0
20 40 60 80 100120140160  
Junction Temperature (°C)  
Conduction Time (Cycles at 60Hz)  
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 3 of 9  
BCR10CS-12LB  
Preliminary  
Allowable Case Temperature vs.  
RMS On-State Current  
Maximum On-State Power Dissipation  
32  
28  
24  
20  
16  
12  
8
160  
140  
120  
100  
80  
360° Conduction  
Resistive,  
inductive loads  
Curves apply  
regardless of  
conduction angle  
60  
40  
360° Conduction  
Resistive,  
inductive loads  
4
20  
0
0
0
2
4
6
8
10 12 14 16  
0
2
4
6
8
10 12 14 16  
RMS On-State Current (A)  
RMS On-State Current (A)  
Allowable Ambient Temperature vs.  
RMS On-State Current  
Allowable Ambient Temperature vs.  
RMS On-State Current  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
Natural convection  
No fins  
Curves apply regardless  
of conduction angle  
Resistive, inductive loads  
120 × 120 × t2.3  
100 × 100 × t2.3  
60 × 60 × t2.3  
All fins are black  
painted aluminum  
and greased  
60  
60  
40  
40  
Curves apply regardless  
of conduction angle  
Resistive, inductive loads  
Natural convection  
20  
20  
0
0
0
2
4
6
8
10 12 14 16  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
RMS On-State Current (A)  
RMS On-State Current (A)  
Repetitive Peak Off-State Current vs.  
Junction Temperature  
Holding Current vs.  
Junction Temperature  
106  
7
5
103  
7
Typical Example  
Typical Example  
3
2
5
4
105  
3
2
7
5
3
2
104  
102  
7
7
5
3
2
5
4
103  
3
2
7
5
3
2
102  
60–4020  
101  
0
20 40 60 80 100120140160  
60–4020 0 20 40 60 80 100120140160  
Junction Temperature (°C)  
Junction Temperature (°C)  
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 4 of 9  
BCR10CS-12LB  
Preliminary  
Latching Current vs.  
Junction Temperature  
Breakover Voltage vs.  
Junction Temperature  
103  
7
5
160  
140  
120  
100  
80  
Typical Example  
3
2
+
Distribution  
T
, G  
Typical Example  
2
102  
7
5
3
2
60  
101  
7
5
40  
3
2
+
+
T
, G  
, G  
20  
2
Typical Example  
T
2
100  
–40  
0
0
40  
80  
120  
160  
60–4020  
0
20 40 60 80 100120140160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=125°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=150°C)  
160  
160  
Typical Example  
Tj = 125°C  
Typical Example  
Tj = 150°C  
140  
120  
100  
80  
140  
120  
100  
80  
III Quadrant  
III Quadrant  
60  
60  
I Quadrant  
40  
40  
I Quadrant  
20  
20  
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
Rate of Rise of Off-State Voltage (V/μs)  
Rate of Rise of Off-State Voltage (V/μs)  
Commutation Characteristics (Tj=125°C)  
Commutation Characteristics (Tj=150°C)  
7
7
Typical Example  
Tj = 125°C  
I = 4A  
Time  
Time  
Typical Example  
Tj = 150°C  
I = 4A  
Main Voltage  
Main Voltage  
5
5
(dv/dt)c  
(dv/dt)c  
V
D
V
D
Main Current  
Main Current  
T
T
3
2
3
2
(di/dt)c  
Time  
(di/dt)c  
Time  
I
I
T
T
τ = 500μs  
= 200V  
τ = 500μs  
= 200V  
τ
τ
V
V
D
f = 3Hz  
D
f = 3Hz  
101  
101  
Minimum  
Characteristics  
Value  
7
5
7
5
I Quadrant  
III Quadrant  
I Quadrant  
3
2
3
2
Minimum  
Characteristics  
Value  
III Quadrant  
100  
7
100  
7
100  
2
3
5 7 101  
2
3
5 7 102  
100  
2
3
5 7 101  
2
3
5 7 102  
Rate of Decay of On-State  
Commutating Current (A/ms)  
Rate of Decay of On-State  
Commutating Current (A/ms)  
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 5 of 9  
BCR10CS-12LB  
Preliminary  
Gate Trigger Current vs.  
Gate Current Pulse Width  
103  
7
Typical Example  
I
5
4
FGT I  
I
RGT I  
3
2
I
RGT III  
102  
7
5
4
3
2
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
Gate Current Pulse Width (μs)  
Gate Trigger Characteristics Test Circuits  
Recommended Circuit Values Around The Triac  
6Ω  
6Ω  
Load  
C1  
R1  
A
A
6V  
6V  
C0 R0  
330Ω  
330Ω  
V
V
C
R
= 0.1 to 0.47μF  
= 47 to 100Ω  
C
R
= 0.1μF  
= 100Ω  
1
1
0
0
Test Procedure II  
Test Procedure I  
6Ω  
A
6V  
330Ω  
V
Test Procedure III  
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 6 of 9  
BCR10CS-12LB  
Preliminary  
Package Dimensions  
Package Name  
LDPAK(S)-(1)  
JEITA Package Code  
SC-83  
RENESAS Code  
PRSS0004AE-B  
Previous Code  
MASS[Typ.]  
1.30g  
Unit: mm  
LDPAK(S)-(1) / LDPAK(S)-(1)V  
4.44 0.2  
7.8  
6.6  
10.2 0.3  
1.3 0.15  
2.49 0.2  
+ 0.2  
0.1  
0.1  
2.2  
1.37 0.2  
0.4 0.1  
+ 0.2  
0.1  
1.3 0.2  
0.86  
2.54 0.5  
2.54 0.5  
Package Name  
TO-220S  
JEITA Package Code  
SC-83  
RENESAS Code  
PRSS0004AB-A  
Previous Code  
MASS[Typ.]  
1.2g  
Unit: mm  
TO-220S  
10.5Max  
4.5  
1.3  
+0.3  
–0  
0
1
5
0.5  
0.8  
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 7 of 9  
BCR10CS-12LB  
Preliminary  
Package Name  
JEITA Package Code  
RENESAS Code  
Previous Code  
MASS (Typ) [g]  
1.4  
TO-263  
PRSS0004AS-A  
TO-263A  
Unit: mm  
B
A
A
E
E1  
c2  
c
2x b2  
2x b  
e
0.25  
M
A
M
B
Dimensions in millimeters  
Min Nom Max  
Reference  
Symbol  
A
A1  
b
b2  
c
c2  
D
D1  
E
4.20  
0.00  
0.65  
1.12  
0.381  
1.15  
8.50  
6.90  
10.05  
8.00  
4.60  
0.255  
0.95  
1.42  
0.737  
1.40  
9.10  
7.50  
10.65  
8.80  
H
GAUGE  
PLANE  
E1  
e
H
2.54 BSC  
0.25 BSC  
15.00  
1.90  
15.60  
2.50  
1.70  
1.78  
L
L1  
L2  
L3  
L4  
L
L4  
4.78  
5.28  
Package Name  
JEITA Package Code  
RENESAS Code  
Previous Code  
MASS (Typ) [g]  
1.4  
TO-262  
PRSS0004AR-A  
TO-262A  
Unit: mm  
B
c1  
E
A
A
b1  
A1  
b2  
e
Dimensions in millimeters  
Min Nom Max  
4.200 4.400 4.600  
2.050 2.400 2.750  
0.635 1.050 1.400  
0.640 0.750 0.880  
1.140 1.300 1.400  
0.330 0.500 0.600  
8.500 9.250 9.650  
9.650 10.000 10.370  
2.54 BSC  
Reference  
M
0.25  
A B  
c2  
Symbol  
A
A1  
b1  
b2  
c1  
c2  
D
E
e
H
23.850  
L
12.900 13.500 14.100  
L1  
L2  
4.550 4.800  
1.100 1.727  
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 8 of 9  
BCR10CS-12LB  
Preliminary  
Ordering Information  
Orderable Part Number  
BCR10CS-12LB#BH0  
BCR10CS-12LBT1#BH0  
BCR10CS-12LBA1#BH0  
BCR10CS-12LB#B00  
BCR10CS12LBT11#B00  
BCR10CS-12LB#B01  
BCR10CS12LBT11#B01  
Package  
TO-263  
TO-263  
TO-262  
Packing  
Tube  
Quantity  
Remark  
50 pcs.  
Embossed Tape  
Tube  
800 pcs. Taping direction “T1”  
50 pcs.  
LDPAK(S)-(1) Tube  
50 pcs. Not Recommend for New Design  
1000 pcs. Not Recommend for New Design  
50 pcs. EOL  
LDPAK(S)-(1) Embossed Tape  
TO-220S  
TO-220S  
Tube  
Embossed Tape  
1000 pcs. EOL  
Note : Please confirm the specification about the shipping in detail.  
R07DS0224EJ0500 Rev.5.00  
Oct 19, 2015  
Page 9 of 9  
Notice  
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Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
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Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333  
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999  
Renesas Electronics Hong Kong Limited  
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2265-6688, Fax: +852 2886-9022  
Renesas Electronics Taiwan Co., Ltd.  
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949  
Tel: +65-6213-0200, Fax: +65-6213-0300  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics India Pvt. Ltd.  
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India  
Tel: +91-80-67208700, Fax: +91-80-67208777  
Renesas Electronics Korea Co., Ltd.  
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2015 Renesas Electronics Corporation. All rights reserved.  
Colophon 5.0  

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