AML1005H3N9STS [RENESAS]
NPN SiGe RF Transistor for Low Noise, High-Gain; NPN硅锗RF晶体管的低噪声，高增益
| 型号： | AML1005H3N9STS |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | NPN SiGe RF Transistor for Low Noise, High-Gain |
| 文件： | 总16页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
NESG3033M14
R09DS0049EJ0300
Rev.3.00
NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)
Sep 14, 2012
FEATURES
•
The NESG3033M14 is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
•
•
•
•
Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
This product is improvement of ESD of NESG3032M14.
4-pin lead-less minimold (M14, 1208 PKG)
<R>
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3033M14
NESG3033M14-A
4-pin lead-less minimold 50 pcs
• 8 mm wide embossed taping
(M14, 1208 PKG)
(Pb-Free)
(Non reel)
10 kpcs/reel
• Pin 1 (Collector), Pin 4 (NC) face the
perforation side of the tape
NESG3033M14-T3 NESG3033M14-T3-A
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Base Current
Symbol
Ratings
Unit
V
Note 1
VCBO
5.0
4.3
VCEO
V
Note 1
IB
12
mA
mA
mW
°C
Collector Current
IC
35
Note 2
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
150
Tj
150
Tstg
−65 to +150
°C
Notes 1. VCBO and IB are limited by the permissible current of the protection element.
2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 1 of 14
NESG3033M14
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Symbol
Pin
MIN.
TYP.
MAX.
0
Unit
dBm
kΩ
Input Power
Base Feedback Resister
−
−
−
−
Rb
100
Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the
ESD protection element is turned on when recommended range of motion in the above table is exceeded.
However, there is no influence of reliability, including deterioration.
R
b
Bias
Choke
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 2 of 14
NESG3033M14
<R>
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0
−
−
−
−
100
100
380
nA
nA
−
VEB = 1 V, IC = 0
Note 1
hFE
VCE = 2 V, IC = 6 mA
220
300
RF Characteristics
Insertion Power Gain
Noise Figure
⏐S21e⏐2
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
15.0
17.5
0.60
−
dB
dB
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
NF
−
0.85
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
Associated Gain
Ga
−
17.5
−
dB
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 2 V, IE = 0, f = 1 MHz
−
17.5
−
0.15
20.5
12.5
0.25
−
pF
dB
MSGNote 3 VCE = 2 V, IC = 15 mA, f = 2.0 GHz
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
Gain 1 dB Compression Output Power
PO (1 dB)
−
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
VCE = 3 V, IC (set) = 20 mA,
OIP3
−
24.0
−
dBm
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
S21
3. MSG =
S12
<R>
hFE CLASSIFICATION
Rank
FB/YFB
zL
Marking
hFE Value
220 to 380
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 3 of 14
NESG3033M14
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
250
200
150
100
50
0.3
0.2
0.1
Mounted on Glass Epoxy PCB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
0
25
50
75
100
125
(˚C)
150
1.0
1.0
0
1
2
3
4
5
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
V
CE = 1 V
VCE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
10
1
40
35
30
25
20
15
10
5
V
CE = 3 V
200 A
μ
180
160
140
μ
μ
μ
μ
μ
A
A
A
120
100
A
A
0.1
80
60
μ
μ
A
A
0.01
0.001
40
μ
μ
A
A
IB
= 20
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
3
4
5
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 4 of 14
NESG3033M14
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
100
10
V
CE = 1 V
VCE = 2 V
100
10
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE = 3 V
100
10
0.1
1
10
(mA)
100
Collector Current I
C
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 5 of 14
NESG3033M14
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 1 V
V
CE = 2 V
f = 2 GHz
f = 2 GHz
0
0
1
10
100
100
100
1
10
100
Collector Current I
C
(mA)
Collector Current I (mA)
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
30
25
20
15
10
40
35
30
25
20
15
V
CE = 1 V
I = 15 mA
V
CE = 3 V
C
f = 2 GHz
MSG
MAG
MAG
2
MSG
|S21e
|
10
5
5
0
0
1
10
0.1
1
10
100
Collector Current I
C
(mA)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
40
V
CE = 2 V
VCE = 3 V
I = 15 mA
I
C
= 15 mA
C
35
30
25
20
15
MSG
MSG
MAG
MAG
MAG
MAG
MSG
MSG
2
2
|S21e
|
|S21e
|
10
5
10
5
0
0
0.1
1
10
0.1
1
10
100
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 6 of 14
NESG3033M14
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 1 V
VCE = 1 V
f = 1 GHz
MSG
f = 0.5 GHz
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 1 V
V
CE = 1 V
f = 2 GHz
f = 3 GHz
MSG
MAG
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
25
20
15
10
5
30
25
20
15
10
5
V
CE = 1 V
VCE = 2 V
f = 0.5 GHz
MSG
f = 5 GHz
2
|S21e
|
MAG
2
|S21e
|
0
–5
0
1
10
100
1
10
Collector Current I (mA)
100
Collector Current I
C
(mA)
C
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 7 of 14
NESG3033M14
INSERTION POWER GAIN, MSG
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V
VCE = 2 V
f = 2 GHz
f = 1 GHz
MSG
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
100
100
C
(mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V
V
CE = 2 V
f = 3 GHz
f = 5 GHz
MSG
MAG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
C
(mA)
Collector Current I (mA)
C
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 3 V
V
CE = 3 V
MSG
f = 0.5 GHz
f = 1 GHz
MSG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
C
(mA)
C
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 8 of 14
NESG3033M14
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 3 V
VCE = 3 V
f = 3 GHz
f = 2 GHz
MSG
MAG
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
V
CE = 3 V
f = 5 GHz
MAG
2
|S21e
|
0
1
10
100
Collector Current I (mA)
C
Remark The graphs indicate nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 9 of 14
NESG3033M14
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
15
10
5
50
40
30
20
10
0
V
CE = 3 V, f = 2 GHz
Icq = 20 mA (RF OFF)
P
out
I
C
0
–5
–20
–15
–10
–5
0
5
Input Power Pin (dBm)
Measuring method : Measured at power matched with external sleeve tuner. (The load resistance is not inserted
between the base DC power supply and Bias Tee.)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
3
2
1
0
20
15
10
G
a
5
0
NF
V
CE = 2 V
f = 2 GHz
1
10
Collector Current I
100
C
(mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 10 of 14
NESG3033M14
EVALUATION CIRCUIT EXAMPLE (f = 1.575 GHz LNA)
V
CC
GND
IN
R3
C4
C3
R1
C1
R2
L2
C2
L1
Tr. (NESG3033M14)
NESG3033M14
GPS_LNA
Notes 1. 15 × 24 mm, t = 0.2 mm double sided copper clad glass epoxy PWB.
2. Au plated on pattern
3.
: Through holes
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 11 of 14
NESG3033M14
<R>
EVALUATION CIRCUIT (f = 1.575 GHz LNA)
V
CC
3 V
62 Ω
R3
C4
10 000 pF
5.6 Ω
R2
L2
C3
R1
10 000 pF
3.9 nH
C2
6 pF
82 kΩ
OUT
L1
C1
IN
5.6 nH
10 000 pF
Microstrip
W = 0.15 mm
L = 0.5 mm
× 2
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
COMPONENT LIST
<R>
Symbol
Parts
Part Number
GRM155B31H103KA88
GRM1552C1H6R0DZ01
AML1005H5N6STS
AML1005H3N9STS
MCR01MZPJ823
Maker
Murata
Murata
FDK
Value
10 000 pF
6 pF
C1, C3, C4
Chip Capacitor
Chip Capacitor
Chip Inductor
Chip Inductor
Chip Resistor
Chip Resistor
Chip Resistor
C2
L1
L2
R1
R2
R3
5.6 nH
3.9 nH
82 kΩ
5.6 Ω
FDK
ROHM
ROHM
ROHM
MCR01MZPJ5R6
MCR01MZPJ620
62 Ω
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 12 of 14
NESG3033M14
<R>
EXAMPLE OF CHARACTERISTICS FOR 1.575 GHz LNA EVALUATION BOARD
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3 V, IC = 6.1 mA, f = 1.575 GHz)
Parameter
Symbol
NF
Value
0.72
17.3
10.3
14.2
−0.3
0.7
Unit
dB
Noise Figure
Gain
Ga
dB
Input Return Loss
RLin
dB
Output Return Loss
RLout
PO (1 dB)
IIP3
dB
Gain 1 dB Compression Output Power
Input 3rd Order Distortion Interception Point
dBm
dBm
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, IM vs. INPUT POWER
3
40
20
0
15
10
5
25
20
15
10
5
V
CC = 3 V, I = 6.1 mA
C
V
CC = 3 V, f = 1.575 GHz
Note
f1in = 1.575 GHz,
f2in = 1.576 GHz
I
cq = 6.1 mA (RF OFF)
P
OUT
Pout
−20
−40
−60
−80
0
I
C
IM
3
–5
IIP3 = 0.7 dBm
–10
–25
0
5
−30
−20
Input Power Pin (dBm)
−10
0
10
–20
–15
–10
–5
0
Input Power Pin (dBm)
Note A current increase is seen because the ESD protection element is turned on.
However, there is no influence of deterioration etc. on reliability.
Remark The graph indicates nominal characteristics.
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 13 of 14
NESG3033M14
PACKAGE DIMENSIONS
<R>
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm)
1.0 0.05
+0.07
0.8
(Bottom View)
–0.05
0.2
0.2
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. NC (Connected with Pin 2) Note
Note A NC pin is Non-connection in the mold package (When NC-pin is open state, It will get an influences of floating
capacitance. Therefore, we recommend that NC pin connect to Emitter pin).
R09DS0049EJ0300 Rev.3.00
Sep 14, 2012
Page 14 of 14
Revision History
NESG3033M14 Data Sheet
Description
Summary
Rev.
Date
Page
1.00
2.00
3.00
Jul 19, 2005
Sep 11, 2007
Sep 14, 2012
–
–
First edition issued
Second edition issued
Throughout The company name is changed to Renesas Electronics Corporation.
p.1
p.3
Modification of ORDERING INFORMATION
Modification of ELECTRICAL CHARACTERISTICS
Modification of hFE CLASSIFICATION
p.3
p.10
p.12
p.12
Modification of method for obtaining S-parameters
Modification of EVALUTION CIRCUIT
Modification of COMPONENT LIST
Modification of EXAMPLE OF CHARACTERISTICS FOR f = 1.575 GHz LNA
EVALUATION BOARD
p.13
p.14
Modification of PACKAGE DIMENSIONS
All trademarks and registered trademarks are the property of their respective owners.
C - 1
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
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Film Capacitor, Polyester, 50V, 5% +Tol, 5% -Tol, 0.0001uF, Through Hole Mount, RADIAL LEADED
KEMET
AML101J50RCK
Film Capacitor, Polyester, 50V, 5% +Tol, 5% -Tol, 0.0001uF, Through Hole Mount, RADIAL LEADED
KEMET
AML102K100BCK
Film Capacitor, Polyester, 100V, 10% +Tol, 10% -Tol, 0.001uF, Through Hole Mount, RADIAL LEADED
KEMET
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