2SK3712-Z-E1 [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,9A I(D),TO-252;
| 型号： | 2SK3712-Z-E1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,9A I(D),TO-252 |
| 文件： | 总8页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
PART NUMBER
2SK3712
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
2SK3712-Z
FEATURES
• High voltage: VDSS = 250 V
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.58 Ω MAX. (VGS = 10 V, ID = 4.5 A)
• Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
• Built-in gate protection diode
• TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
250
V
V
±30
±9.0
A
±27
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
40
W
W
°C
°C
A
PT2
1.0
(TO-252)
Tch
150
Storage Temperature
Tstg
–55 to +150
Single Avalanche Current Note2
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Pulse Avalanche Energy
IAS
9
EAS
8.1
9
mJ
A
IAR
Note3
EAR
8.1
mJ
Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch(peak) ≤ 150°C, L = 100 μH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16372EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK3712
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
IDSS
TEST CONDITIONS
VDS = 250 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±10
4.5
μA
μA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 4.5 A
VGS = 10 V, ID = 4.5 A
VDS = 10 V
2.5
3
3.5
6
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
S
0.45
450
100
40
8
0.58
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
VDD = 125 V, ID = 4.5 A
VGS = 10 V
Rise Time
8
Turn-off Delay Time
td(off)
tf
RG = 0 Ω
21
6
Fall Time
Total Gate Charge
QG
VDD = 200 V
14
3
Gate to Source Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
Gate to Drain Charge
ID = 9.0 A
7
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
IF = 9 A, VGS = 0 V
IF = 9 A, VGS = 0 V
di/dt = 100 A/μs
0.9
150
630
1.5
ns
nC
Qrr
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
0
RG
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
V
DS
90%
d(on)
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
t
r
t
d(off)
t
f
V
DD
t
on
t
off
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
V
DD
2
Data Sheet D16372EJ3V0DS
2SK3712
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
TC = 25°C
Single pulse
ID(pulse) = 27 A
PW = 100 μs
1 ms
10 ms
ID(DC) = 9.0 A
1
RDS(on) Limited
(at VGS = 10 V)
0.1
0.01
Power dissipation limited
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Single pulse
Rth(ch-A): TA = 25°C
Rth(ch-C): TC = 25°C
Rth(ch-A) = 125°C/W
Rth(ch-C) = 3.125°C/W
1
0.1
0.01
100 μ
1 m
10 m
100m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D16372EJ3V0DS
2SK3712
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
30
25
20
15
10
5
100
VDS = 10 V
Pulsed
VGS = 10 V
Pulsed
10
1
A
T
= −25°C
25°C
75°C
125°C
150°C
0.1
0.01
0.001
0.0001
0
0
5
10
15
0
5
10
15
20
25
30
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4.5
4
100
10
1
VDS = 10 V
ID = 1 mA
TA = − 25°C
25°C
75°C
125°C
150°C
3.5
3
0
2.5
2
VDS = 10 V
Pulsed
0
0.01
0.1
1
10
100
-50 -25
0
25
50
75 100 125 150 175
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
1.3
Pulsed
1.2
VGS = 10 V
Pulsed
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.1
ID = 9.0 A
1
4.5 A
1.8 A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D16372EJ3V0DS
2SK3712
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
2
1000
VGS = 10 V
ID = 9.0 A
Pulsed
1.75
1.5
1.25
1
C iss
100
C oss
4.5 A
0.75
0.5
0.25
0
10
rss
C
VGS = 0 V
f = 1 MHz
1
0.1
1
10
100
1000
-50 -25
0
25
50
75 100 125 150 175
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
1
250
15
ID = 9.0 A
200
150
100
50
12
9
tf
VDD = 200 V
125 V
td(off)
62.5 V
td(on)
tr
VGS
6
3
VDS
VDD = 125 V
VGS = 10 V
RG = 0 Ω
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
0.1
1
10
100
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1000
100
10
VGS = 0 V
Pulsed
di/dt = 100 A/μs
VGS = 0 V
1
0.1
0.01
1
0
0.25
0.5
0.75
1
1.25
1.5
0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D16372EJ3V0DS
2SK3712
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
100
80
60
40
20
0
VDD = 125 V
VGS = 20 → 0 V
RG = 25 Ω
IAS = 9 A
EAS = 8.1 mJ
VDD = 125 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 9 A
0.01
0.1
1
10
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - mH
6
Data Sheet D16372EJ3V0DS
2SK3712
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
<R> 2) TO-252 (MP-3Z)
2.3 ±0.2
0.5 ±0.1
6.5 ±0.2
5.0 ±0.2
4
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
2.3 ±0.2
0.5 ±0.1
Note
Note
4
1
2
3
1
2 3
1.1 ±0.2
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.15 ±0.15
0.5 +−00..12
0.5 +−00..21
2.3 2.3
1. Gate
2. Drain
1. Gate
3. Source
4. Fin (Drain)
2. Drain
3. Source
4. Fin (Drain)
Note The depth of notch at the top of the fin is from
0 to 0.2 mm.
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
7
Data Sheet D16372EJ3V0DS
2SK3712
•
The information in this document is current as of August, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
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M8E 02. 11-1
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